US07990029B2
A ceramic material includes lead zirconate titanate, which additionally contains Nd and Ni. For example, the ceramic material may have a composition according to the following formulae: for y≦x/2: a PbO+(Pb1−3x/2+y□x/2−yNdx)((Zr1−zTiz)1−yNiy)O3 for y>x/2: a PbO+(Pb1−xNdx)((Zr1−zTiz)1−yNiy)O3−y+x/2⋄y−x/2, where 0≦a<1, 0
US07990027B2
A piezoelectric device includes: a container; a piezoelectric resonator element accommodated in the container; a circuit element accommodated in the container so as not to overlap with the piezoelectric resonator element in a plan view; and a mounting stage to which the piezoelectric resonator element is fixed. The mounting stage is fixed inside the container.
US07990025B1
A hermetic package for electronic components which is made of metallic silicon is disclosed. The package includes a plurality of silicon elements which are bonded together. In the first embodiment, a cavity is hollowed out in the cover to house the Application Specific Integrated Circuit oscillator and the resonator. In a second embodiment, the cavity is formed in the base member with a plurality of pedestal shelves to hold the resonator above and out of contact with the electrical circuitry for the oscillator and thermal controls.
US07990011B2
A rotor for an electric motor (10) includes a magnetic assembly (12) formed into a ring-shaped plate form, a rotor disc (11) for holding an inner periphery of the magnet assembly, and an outer peripheral ring (13) for holding an outer periphery of the magnet assembly. The magnet assembly is composed of first and second main magnets (12A-1, 12A-2) having magnetizations directions that are oriented perpendicularly and having orientations that are opposite one another, and first and second submagnets (12B-1, 12B-2) having magnetization directions that are oriented perpendicularly in a circumferential direction and having orientations that are opposite one another. At least one group of magnets selected from the main magnets and the submagnets has a wedge-shaped planar part. The planar parts of the first and second main magnets and first and second submagnets form the same plane of rotation. The magnets are arranged so that the magnetization directions of adjacent magnets are perpendicular to one another.
US07990009B2
An electrical machine which has a moving part and a stationary part. The moving part is in the form of an inner rotor without windings, and the rotor which has at least two magnetic conductors, which are separated from one another axially such that impeller wheels are formed. The stationary part has a number of magnetically acting webs in the circumferential direction of the machine. The webs are operatively connected to the magnetic conductors of the rotor. The stationary part has at least one first winding structure which is likewise operatively connected to the axially separated magnetic conductors of the rotor. In addition, a second winding structure is included on the webs wherein either the first winding structure acts as an armature winding and the second winding structure acts as a field winding, or vice versa. The impeller wheels are radially innerly magnetically effectively connected by means of a further magnetic conductor.
US07989999B2
In a starter includes a motor provided with a motor contact for controlling electric power supply to an armature arranged inside a motor housing; a gear cover section, which is mounted on the motor, having a flange section formed on the outer circumference thereof; a switch terminal located on the outside of the gear cover section; and a magnet switch connected to the switch terminal. The switch terminal is installed in the vicinity of the flange section and in a region within the range of projection of the flange section . In the flange section, there are provided a rib and a motor terminal mounting section, and the switch terminal is arranged in a switch terminal containing section formed between the rib, the sidewall of the motor terminal mounting section and the flange section.
US07989998B2
With a motor with an encoder of the invention, a stopper gap formed between a stopper formed on an outer circumferential surface of a hub of the encoder and a bearing cover of an anti-load side bracket is set smaller than an encoder gap to prevent that a rotating disk is made contact with a fixed slit even when an excessive force is applied to an output shaft of the motor with the encoder.
US07989997B2
A control device for an electrically operated power steering system includes: a power substrate comprising a plurality of switching elements, that converts DC electrical current to AC electrical current by switching operation of the plurality of switching elements; an output terminal for transmitting the AC electrical current to an electric motor that generates steering torque; a conductor for electrically connecting the power substrate to the output terminal; a metallic chassis that holds the power substrate and the conductor, and supports the output terminal; and a metallic cover that faces the output terminal, and that is connected to the metallic chassis.
US07989986B2
An inductive power supply system to identify remote devices using unique identification frequencies. The system includes an AIPS and a tank circuit capable of inductively providing power to a remote device at different frequencies, and a sensor for sensing the reflected impedance of the remote device at tank circuit. The system further includes a plurality of different remote devices, each having a unique resonance frequency. In operation, the AIPS is capable of identifying the type of remote device present in the inductive field by applying power to a remote device at a plurality of unique identification frequencies until the remote device establishes resonance in response to one of the identification frequencies. The AIPS includes a controller that recognizes when resonance has been established by evaluating sensor data, which is representative of the reflected impedance of the remote device. Once the identity of a remote device is determined, the AIPS may pull operating parameters for the remove device from memory to ensure efficient operation and to assist in recognizing fault conditions.
US07989980B2
An energy storage system, more particularly to a power distribution system for providing power for an indeterminate period of time. The power distribution system comprises means for converting the energy from an alternator to AC/DC circuits. The alternator transmits electric current to a battery, where an inverter is electrically connected to the battery and transmits AC power to low-load circuits. A DC control panel is connected to the battery and transmits electric current from the battery to low-load DC circuits. The power system is part of a portable toolbox. The system is connected to a vehicle's charging system or any mechanism having a alternator a first battery an engine and a starting system an would continually recharge it self. The battery for the system is connected to the alternator of a vehicle and or mechanism through an isolator, or connected directly to the alternator or battery of the vehicle and or mechanism and would transmit a direct electric current to the battery for the system which stores the charge. The inverter is electrically connected to the battery for the system and transmits an electric current from the battery to one or more low-load circuits.
US07989978B2
A temperature increase power command producing unit produces a temperature increase power command value for transferring a power between power storage devices when heating control for raising temperature of the power storage device is performed. The temperature increase power command producing unit provides the temperature increase power command value to a current control unit, and provides a command value prepared by inverting a sign of the temperature increase power command value to a current control unit. The current control unit performs current control based on a first current command value and the temperature increase power command value, and the current control unit performs current control based on the second current command value and the command value prepared by inverting the sign of the temperature increase power command value.
US07989970B2
A bicycle-seat power generation device includes a seat, a frame, an electrical generator, an electrical generation module, a mount, and a cushioning unit. The electrical generator includes a spindle gear. The electrical generation module includes a toothed rack and a transmission gear train. The toothed rack has an upper end abutting against an underside of the seat. The transmission gear train has an end engaging the toothed rack and another end engaging the spindle gear of the electrical generator. The mount accommodates the electrical generation module and the electrical generator therein in order to have the electrical generation module and the electrical generator coupled between the seat and the frame. The cushioning unit is also coupled between the seat and the frame and is fixed together with the mount in order to drive the toothed rack of the electrical generation module for effecting power generation. As such, a bicycle-seat power generation device that features simultaneous shock absorption and power generation is provided.
US07989963B2
A specially designed mask controls the arrangement of conductive materials that form a source and drain of a transistor. Designing the mask can be costly and time-consuming, which means that the testing of a circuit involving a transistor can also be costly, time consuming and a barrier towards efficient circuit development and testing. Accordingly, the present invention provides a pre-fabricated, general-purpose pattern comprising an array of conductive islands. The pattern is used as a source and a drain terminal for the formation of a thin-film transistor and as a conductive source for the formation of other electrical components upon the array.
US07989962B2
A bonding pad includes multiple metal layers, insulation layers disposed between the multiple metal layers, and a fixing pin coupled between the uppermost metal layer and an underlying metal layer of the multiple metal layers, where a bonding is performed on the uppermost metal layers.
US07989961B2
An enhanced redistribution layer is provided that geometrically expands redistribution layer (RDL) pads associated with a ball grid array of a wafer level package (WLP) to provide tensile stress relief during temperature cycle and/or drop testing of the WLP.
US07989954B2
An integrated circuit chip includes a silicon substrate, a first circuit in or over said silicon substrate, a second circuit device in or over said silicon substrate, a dielectric structure over said silicon substrate, a first interconnecting structure in said dielectric structure, a first pad connected to said first node of said voltage regulator through said first interconnecting structure, a second interconnecting structure in said dielectric structure, a second pad connected to said first node of said internal circuit through said second interconnecting structure, a passivation layer over said dielectric structure, wherein multiple opening in said passivation layer exposes said first and second pads, and a third interconnecting structure over said passivation layer and over said first and second pads.
US07989943B2
A staircase shaped stacked semiconductor package is presented which includes a substrate, a multiplicity of semiconductor chip modules, a connection member, and conductive members. The substrate has connection pads along an upper surface edge. Each semiconductor chip module includes a first and a second semiconductor chip that oppose each other. The first and second semiconductor chips have respective first and second bonding pads along exposed surfaces. The connection member is placed on an uppermost semiconductor chip module and has first and second terminals electrically connected to the first and second bonding pads via conductive members. The conductive members are also coupled to the connection pads of the substrate.
US07989934B2
A carrier (100) for bonding a semiconductor chip (114) onto is provided, wherein the carrier (100) comprises a die pad (101) and a plurality of contact pads (102), wherein each of the plurality of contact pads (102) comprises an electrically conductive multilayer stack, wherein the electrically conductive multilayer stack comprises a surface layer (109), a first buffer layer, and a first conductive layer (108). Furthermore, the first buffer layer comprises a material adapted to prevent diffusion of material of the surface layer (109) into the first conductive layer (108), and at least two of the contact pads (102) has an ultrafine pitch relative to each other.
US07989933B1
In accordance with the present invention, there is provided a semiconductor package (e.g., a QFP package) including a uniquely configured leadframe sized and configured to maximize the available number of exposed leads in the semiconductor package. More particularly, the semiconductor package of the present invention includes a generally planar die pad or die paddle defining multiple peripheral edge segments. In addition, the semiconductor package includes a plurality of leads. Some of these leads include exposed bottom surface portions which are provided in at least two concentric rows or rings which at least partially circumvent the die pad, with other leads including portions which protrude from respective side surfaces of a package body of the semiconductor package. Connected to the top surface of the die pad is at least one semiconductor die which is electrically connected to at least some of the leads. At least portions of the die pad, the leads, and the semiconductor die are encapsulated by the package body, with at least portions of the bottom surfaces of the die paddle and some of the leads being exposed in a common exterior surface of the package body.
US07989931B2
An integrated circuit package system is provided including: forming a die paddle; forming an under paddle leadframe including lower leadfingers thereon; attaching the under paddle leadframe to the die paddle with the lower leadfingers extending under the die paddle; attaching a die to the die paddle; and planarizing the bottom surface of the under paddle leadframe to separate the lower leadfingers under the die paddle.
US07989929B2
A direct-connect signaling system including a printed circuit board and first and second integrated circuit packages disposed on the printed circuit board. A plurality of electric signal conductors extend between the first and second integrated circuit packages suspended above the printed circuit board.
US07989928B2
Described herein are semiconductor device packages with EMI shielding and related methods. In one embodiment, a semiconductor device package includes: (1) a substrate unit including a grounding element; (2) a semiconductor device disposed adjacent to an upper surface of the substrate unit; (3) a package body disposed adjacent to the upper surface of the substrate unit and covering the semiconductor device; and (4) an EMI shield disposed adjacent to exterior surfaces of the package body and electrically connected to a connection surface of the grounding element. A lateral surface of the package body is substantially aligned with a lateral surface of the substrate unit, and the connection surface of the grounding element is electrically exposed adjacent to the lateral surface of the substrate unit. The grounding element corresponds to a remnant of an internal grounding via, and provides an electrical pathway to ground electromagnetic emissions incident upon the EMI shield.
US07989927B2
In a silicon substrate for a package, a through electrode is provided with which a through hole passing through from a bottom surface of a cavity for accommodating a chip of an electronic device to a back surface of the substrate is filled. An end part of the through electrode in the bottom surface side of the cavity has a connection part to a wiring that forms an electric circuit including the chip of the electronic device. The silicon substrate for a package is characterized in that (1) a thin film wiring is included as the wiring and the connection part is reinforced by a conductor connected to the thin film wiring and/or (2) a wire bonding part is included as the wiring and the connection part is formed by wire bonding the end part of the through electrode in the bottom surface side of the cavity.
US07989926B2
A semiconductor device includes a substrate formed of a single crystal. a silicon carbide layer disposed on a surface of the single crystal substrate and an intermediate layer disposed on a surface of the silicon carbide layer and formed of a Group III nitride semiconductor, wherein the silicon carbide layer is formed of a cubic crystal stoichiometrically containing silicon copiously and the surface thereof has a (3×3) reconstruction structure. The semiconductor device is fabricated by a method including a first step of blowing a hydrocarbon gas on the surface of the substrate, thereby inducing adsorption of hydrocarbon thereon, a second step of heating the substrate having adsorbed the hydrocarbon to a temperature exceeding a temperature used for the adsorption of the hydrocarbon while irradiating the surface of the substrate with electrons and consequently giving rise to a silicon carbide layer formed of a cubic crystal stoichiometrically containing silicon copiously and provided with a surface having a (3×3) reconstruction structure and a third step of supplying a gaseous raw material containing nitrogen and a gaseous raw material containing a Group III element to the surface of the silicon carbide layer and consequently giving rise to the intermediate layer formed of the Group III nitride semiconductor.
US07989925B2
Semiconductor process technology and devices are provided, including a method for forming a high quality group III nitride layer on a silicon substrate and to a device obtainable therefrom. According to the method, a pre-dosing step is applied to a silicon substrate, wherein the substrate is exposed to at least 0.01 μmol/cm2 of one or more organometallic compounds containing Al, in a flow of less than 5 μmol/min. The preferred embodiments are equally related to the semiconductor structure obtained by the method, and to a device comprising said structure.
US07989911B1
In one embodiment, an integrated circuit includes a substrate having high voltage transistor regions and low voltage transistor regions. The substrate includes a first trench between and adjacent to the high voltage transistor regions, a second trench between and adjacent to the low voltage transistor regions, and a third trench between the first and second trenches and between and adjacent to a high voltage transistor region and a low voltage transistor region. A thicker silicon dioxide layer lines the first trench and a first portion of the third trench adjacent to a high voltage transistor region. A thinner silicon dioxide layer lines the second trench and a second portion of the third trench adjacent to a low voltage transistor region. A silicon nitride layer is present on the thinner silicon dioxide layer and lines the second trench and the second portion of the third trench but is not present on the thicker silicon dioxide layer and does not line the first trench and the first portion of the third trench.
US07989888B2
Embodiments discussed herein relate to processes of producing a field stop zone within a semiconductor substrate by implanting dopant atoms into the substrate to form a field stop zone between a channel region and a surface of the substrate, at least some of the dopant atoms having energy levels of at least 0.15 eV below the energy level of the conduction band edge of semiconductor substrate; and laser annealing the field stop zone.
US07989885B2
A semiconductor device has a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type complementary to the first conductivity type arranged in or on the first semiconductor layer. The semiconductor device has a region of the first conductivity type arranged in the second semiconductor layer. A first electrode contacts the region of the first conductivity type and the second semiconductor layer. A trench extends into the first semiconductor layer, and a voltage dependent short circuit diverter structure has a highly-doped diverter region of the second conductivity type. This diverter region is arranged via an end of a channel region and coupled to a diode arranged in the trench.
US07989880B2
A nonvolatile semiconductor memory device comprises a memory string, and a wiring. The memory string comprises a semiconductor layer, a charge storage layer, and a plurality of first conductive layers. The plurality of first conductive layers comprises a stepped portion formed in a stepped shape such that positions of ends of the plurality of first conductive layers differ from one another. The wiring comprises a plurality of second conductive layers extending upwardly from an upper surface of the first conductive layers comprising the stepped portion. The plurality of second conductive layers are formed such that upper ends thereof are aligned with a surface parallel to the substrate, and such that a diameter thereof decreases from the upper end thereof to a lower end thereof. The plurality of second conductive layers are formed such that the greater a length thereof in the perpendicular direction, the larger a diameter of the upper end thereof.
US07989873B2
Memory elements, switching elements, and peripheral circuits to constitute a nonvolatile memory are integrally formed on a substrate by using TFTs. Since semiconductor active layers of memory element TFTs are thinner than those of other TFTs, impact ionization easily occurs in channel regions of the memory element TFTs. This enables low-voltage write/erase operations to be performed on the memory elements, and hence the memory elements are less prone to deteriorate. Therefore, a nonvolatile memory capable of miniaturization can be provided.
US07989871B2
A nonvolatile semiconductor memory device includes a first insulating film on a channel, a floating gate electrode on the first insulating film, a second insulating film on the floating gate electrode, and a control gate electrode on the second insulating film. Each of the first and second insulating films comprises at least two layers, one layer directly in contact with the floating gate electrode is formed by an insulating material (A) including a metal element having a d orbital, and the other at least one layer is formed by an insulating material (B) chiefly including one of a metal element without the d orbital, and a semiconductor element.
US07989870B2
A flash memory integrated circuit and a method for fabricating the same. A gate stack includes an initial oxide layer directly in contact with a silicon layer, defining an oxide-silicon interface therebetween. Additional oxide material is formed substantially uniformly along the oxide-silicon interface. Polysilicon grain boundaries at the interface are thereby passivated after etching. The interface can be formed between a tunnel oxide and a floating gate, and passivating the grain boundaries reduces erase variability. Oxide in an upper storage dielectric layer is enhanced in the dilute steam oxidation. The thin oxide layers serve as diffusion paths to enhance uniform distribution of OH species across the buried interfaces being oxidized.
US07989865B2
A semiconductor structure is disclosed. The semiconductor structure includes an active semiconductor layer, a semiconductor device having a gate disposed on top of the active semiconductor layer, and source and drain regions and a body/channel region disposed within the active semiconductor layer, an insulator layer having a first and second side, the first side being adjacent to the active semiconductor layer, a substrate disposed adjacent to the second side of the insulator layer, a deep trench capacitor disposed under the body/channel region of the semiconductor device. The deep trench capacitor electrically connects with and contacts the body/channel region of the semiconductor device, and is located adjacent to the gate of the semiconductor device. The semiconductor structure increases a critical charge Qcrit, thereby reducing a soft error rate (SER) of the semiconductor device.
US07989864B2
Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.
US07989863B2
In one embodiment, a lower interlayer dielectric layer, and first and second landing pads penetrating the lower interlayer dielectric layer are formed on a substrate. Interconnection patterns covering the second landing pads are formed on the lower interlayer dielectric layer. An etch stop layer is formed over the interconnection patterns. An upper interlayer dielectric layer filling a gap region between the interconnection patterns is formed on the etch stop layer. The upper interlayer dielectric layer is patterned to form a preliminary contact hole between the interconnection patterns, where the etch stop layer is exposed at the bottom of the preliminary contact hole. The preliminary contact hole is extended and the etch stop layer exposed by the extended preliminary contact hole is removed to form a first contact hole exposing the first landing pad. A buried contact plug is then formed within the first contact hole.
US07989861B2
An image sensor includes a substrate, an anti-reflection board and a light shielding film. The substrate includes first pixels to receive a light, and second pixels to provide a black level compensation. The first pixels are formed in an active region and the second pixels are formed in a first region spaced apart from the active region in a row direction. The anti-reflection board is formed in a second region above the substrate, and the second region is between the active region and the first region. The light shielding film is formed above the anti-reflection board, and the light shielding film covers an optical black region including the first and second regions. Therefore, the image sensor may be used in a CCD type image sensor and a CMOS type image sensor to provide a stabilized black level, thereby improving a quality of a displayed image.
US07989855B2
This invention relates to a semiconductor device having a beam made of a semiconductor to which strain is introduced by deflection, and a current is permitted to flow in the beam.
US07989853B2
A dual channel JFET which can be integrated in an IC without adding process steps is disclosed. Pinch-off voltage is determined by lateral width of a first, vertical, channel near the source contact. Maximum drain voltage is determined by drain to gate separation and length of a second, horizontal, channel under the gate. Pinch-off voltage and maximum drain potential are dependent on lateral dimensions of the drain and gate wells and may be independently optimized. A method of fabricating the dual channel JFET is also disclosed.
US07989840B2
An illumination apparatus includes a plurality of semiconductor light-emitting devices, a reflective layer, a plurality of conductor parts and a translucent adhesive layer. Each of the semiconductor light-emitting devices has a translucent substrate, and a semiconductor light-emitting layer formed on the substrate. The reflective layer has a size on which semiconductor light-emitting devices are arranged at intervals. The conductor parts are provided on the reflective layer, and electrically connected to the semiconductor light-emitting devices. The adhesive layer bonds the substrates of the semiconductor light-emitting devices onto the reflective layer, and thereby holds the semiconductor light-emitting devices on the reflective layer.
US07989834B2
A light emitting device comprises a second electrode layer; a second conductivity-type semiconductor layer on the second electrode layer; a current blocking layer comprising an oxide of the second conductivity-type semiconductor layer; an active layer on the second conductivity-type semiconductor layer; a first conductivity-type semiconductor layer on the active layer; and a first electrode layer on the first conductivity-type semiconductor layer.
US07989825B2
A lens-attached light-emitting element having an improved optical availability efficiency includes a composite lens provided on an approximately U-shaped light-emitting area of the light emitting element array. Four spherical lenses are arranged in such a manner that each is centered in the neighborhood the an end of a respective one of three segments of a U-shaped polygonal line corresponding to positions where light emitted by the U-shaped light-emitting area is a maximum Three cylindrical lens are arranged between two of the spherical lens, respectively, each cylindrical lens having an axis parallel with each segment. These four spherical lenses and three cylindrical lenses together constitute the composite lens. The light-emitting element further comprises an antireflection film covering the light-emitting area, and the composite lens is formed on the surface of the antireflection film.
US07989824B2
A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is formed. A first metal contact is formed on a portion of the n-type region and a second metal contact is formed on a portion of the p-type region. The first and second metal contacts are formed on a same side of the semiconductor structure. A dielectric material is disposed between the first and second metal contacts. The dielectric material is in direct contact with a portion of the semiconductor structure, a portion of the first metal contact, and a portion of the second metal contact. A planar surface is formed including a surface of the first metal contact, a surface of the second metal contact, and a surface of the dielectric material
US07989805B2
An electronic device of the present invention includes a first substrate provided with a thin film active element, having a thickness of 200 μm or lower, and a second substrate formed with a high thermal conductivity portion. The second substrate is applied to one surface of the two surfaces of the first substrate, i.e., the surface being the side other than the side that formed with the thin film active element. The thin film active element has a maximum power consumption of 0.01 to 1 mW. The high thermal conductivity portion is a region that corresponds to the position of the thin film active element and whose thermal conductivity falls within the range from 0.1 to 4 W/cm·deg.
US07989801B2
Provided are an organic light emitting display device coupled to a photoelectric transistor. The organic light emitting display device includes an anode and a cathode separated from each other, a plurality of organic material layers formed between the anode and the cathode and including an organic light emitting layer, a light source applying an excitation pulse to the organic material layers, and a light receiving unit measuring changes in photoluminescence (PL) signals that are emitted from the organic material layers.
US07989791B2
Provided are a diode structure and a memory device including the same. The diode structure includes: a first electrode; a p-type Cu oxide layer formed on the first electrode; an n-type InZn oxide layer formed on the p-type Cu oxide layer; and a second electrode formed on the n-type InZn oxide.
US07989789B2
A phase-change memory device has a plurality of first wiring lines WL extending in parallel to each other, a plurality of second wiring lines BL which are disposed to cross the first wiring lines WL while being separated or isolated therefrom, and memory cells MC which are disposed at respective cross points of the first wiring lines WL and the second wiring lines BL and each of which has one end connected to a first wiring line WL and the other end connected to a second wiring line BL. The memory cell MC has a variable resistive element VR which stores as information a resistance value determined due to phase change between crystalline and amorphous states thereof, and a Schottky diode SD which is connected in series to the variable resistive element VR.
US07989788B2
A method for determining a position of a mechanical edge of a reference edge of a sheet of recording media relative to a first edge of a drum slot in a cylindrical surface of an imaging drum, the method includes mounting the sheet of recording media on the imaging drum in an orientation wherein the reference edge extends along the cylindrical surface of the imaging drum in a substantially axial direction and wherein the reference edge extends over the first edge of the drum slot; establishing at least one acute apex diffuse light source in the slot; capturing at least one digital camera image of the reference edge and the at least one acute apex diffuse light source; and determining from the at least one digital camera image a location of at least one point on the mechanical edge.
US07989787B2
There is a structure element, in particular for radiation shielding constructions, having at least one floor plate and at least one wall section and/or at least one ceiling section. The structure element is characterized in that the at least one wall section and/or the at least one ceiling section comprise/comprises at least two shell elements made from metal, plastic and/or wood and a layer which lies in between and is made from radiation shielding materials. In addition, a construction, in particular a radiation shielding construction, is proposed having at least one floor plate and/or ceiling plate which delimits a storey and a structure element described above.
US07989783B2
A nanolithography system comprising a novel optical printing head suitable for high throughput nanolithography. This optical head enables a super-resolution lithographic exposure tool that is otherwise compatible with the optical lithographic process infrastructure. The exposing light is transmitted through specially designed super-resolution apertures, of which the “C-aperture” is one example, that create small but bright images in the near-field transmission pattern. A printing head comprising an array of these apertures is held in close proximity to the wafer to be exposed. In one embodiment, an illumination source is divided into parallel channels that illuminate each of the apertures. Each of these channels can be individually modulated to provide the appropriate exposure for the particular location on the wafer corresponding to the current position of the aperture. A data processing system is provided to re-interpret the layout data into a modulation pattern used to drive the individual channels. In one embodiment of the invention, the exposure head remains stationary while the material to be exposed rotates beneath the head. Such an embodiment comprises a circular data fracturing system to process the layout data to determine the correct modulation pattern.
US07989779B1
A universal ultraviolet light sanitation device that can be mounted to existing doors and the like wherein the UV light sources are positioned for treatment of a door knob or handle. The device provides for opposing UV lights in a light emitting housing around the doorknob. Sensor means within the assembly determines the non-presence of the user's hand and activates the UV lights before and after handle contact assuring sanitation of the light exposed non-porous surfaces.
US07989774B2
A radiation detector includes a semiconductor element capable of detecting a radiation, a substrate on which the semiconductor element is mounted, and a flexible substrate including a connection pattern connected to an element electrode on an opposite side to the substrate of the semiconductor element. The semiconductor element is disposed on one surface of the substrate, and the flexible substrate is disposed on the opposite side to the substrate of the semiconductor element.
US07989773B2
A digital radiography detector includes a housing and a radiographic image detector assembly. The housing has a first and second spaced planar members and four side walls defining a cavity. The radiographic image detector assembly is mounted within the cavity for converting a radiographic image to an electronic radiographic image. The detector assembly includes a scintillator screen and a detector array, and the detector assembly is bonded to the first planar member of the housing.
US07989757B2
A configurable scanner (1), for contactless measurement of the depth and perimeter of a wound on a target body part (9), has a scan head (4), and is configured to be controlled by a processor (3) for controlling a scanning procedure and analyzing the results. The scan head (4) projects a contour line onto a surface the target body part, and captures an image of the projected contour line. A series of captured images are analyzed to create a three dimensional model of the wound, and determine at least one of depth, perimeter and volume of the wound from the three dimensional model.
US07989746B2
The invention relates to a rail-type solar tracking system with a focusing function. The invention includes a plurality of support elements, a Fresnel lens, a rail platform, a load bearing platform and a pushing device. The system moves a solar cell on the load bearing platform to a focus position where sunlight is focused by the Fresnel lens to collect solar energy. Hence, the invention collects solar energy without moving heavy lens so as to reduce power consumption and improve the electric power generating efficiency of the solar cell.
US07989745B2
A solid-state imaging device comprises a plurality of pixels disposed in a two-dimensional pattern and each equipped with a photoelectric conversion unit that generates and accumulates a signal charge corresponding to a subject image formed with light entering from an optical system and a readout control unit that executes control under which signals are read out from the plurality of pixels. The plurality of pixels include a plurality of imaging pixels that output imaging signals for forming image signals that represents the subject image and a plurality of focus detection pixels that output focus detection signals for detecting a focusing condition of the optical system through a split-pupil phase difference method.
US07989739B2
An electric heater assembly suitable for use with molten metals, the heater employing improved heat transfer media.
US07989735B1
Apparatus for heating hair clips having a heatable member comprises a base, a heating structure, and means for providing electricity to the heating structure. The heating structure can comprise an elongated electrical heater having opposed sides, a plurality of thermally conductive heating elements in pairs on each side of the electrical heater, and a thermal insulator between the heating elements separating the heating elements from each other.
US07989727B2
An improved torch providing high visibility of the work zone to the operator, an increased viewing angle, and a reduced obstruction angle. The high visibility torch includes consumables adapted to maintain torch and consumables performance while reducing visual obstruction to the user, by coordinating, balancing, and optimizing design requirements and stack up tolerances. The invention also includes a related low-profile safety switch that promotes workpiece visibility and minimizes view obstruction.
US07989721B2
A single-pole or multi-pole device for low-voltage systems, in particular a circuit breaker or a disconnector, which comprises: an outer casing containing for each pole at least one fixed contact and at least one mobile contact that can be coupled to/uncoupled from one another; a rotating element that comprises a shaped body made of insulating material comprising at least one seat for each pole of said switch, said seat being designed to house at least one mobile contact of a corresponding pole; a control mechanism operatively connected to the rotating element for enabling movement thereof; and one or more elements made of ferromagnetic material set in a position corresponding to at least one portion of the inner surface of said at least one seat of the mobile contact.
US07989712B2
The protective electronic prototyping enclosure is conveniently formed to accommodate various prototype electronic projects. Openings in the enclosure may be accurately formed and markings can be neatly and precisely formed by on a paper label printed by using the computer. Variable panels are provided for covering spaces between electrical components located adjacent to the side panels of the enclosure.
US07989708B2
In a multi-layer wiring board in which board wirings are arranged in a plurality of wiring layers so as to be connected via a through hole, two through holes are provided in parallel, and two through holes are connected therebetween in both end portions of the respective through holes or one end portion thereof by the wiring board.
US07989706B2
A circuit board has an embedded electronic component such as an integrated circuit chip with a wafer level chip size package. A via hole extends through the electronic component. Another via hole extends through the substrate or prepreg on which the electronic component is mounted inside the circuit board. Conductors in the via holes enable a terminal on the surface of the electronic component to be electrically connected to a wiring pattern or another electronic component on the opposite side of the substrate or prepreg. Routing the connection through the electronic component itself saves space and reduces the length of the connection.
US07989705B2
The present invention relates to a circuit card (4.3; 4.4) which includes conductive patterns (1, 2, 5, 6) and a web (3) made of glass fibers, at least one non-conductive blocking element (11.1; 11.2) for blocking the growth of a conductive filament (12.1; 12.2) along a glass fiber is provided which connects a conductive pattern (1, 2) with a further conductive pattern (5, 6). The present invention also relates to a method for increasing the resistivity of a circuit card (4.3; 4.4) to the formation of conductive filaments (12.1; 12.2), the circuit card (4.3; 4.4) including conductive patterns (1, 2, 5, 6) and a web (3) made of glass fibers; the circuit card (4.3; 4.4) being provided with at least one non-conductive blocking element (11.1; 11.2) for blocking the growth of a conductive filament (12.1; 12.2) along a glass fiber, which connects a conductive pattern (1, 2) to a further conductive pattern (5, 6).
US07989697B2
A network communication device includes a top component and a bottom cover forming a receiving space there between when assembled. The top component further includes a top cover and a body. The body is configured attaches the top cover and the bottom cover. The assembly of the top cover and the bottom cover utilizes at least one locking tab assembly. Each locking tab assembly includes a locking tab and a reciprocal locking structure engaged with the locking tab. One of the locking tabs and the reciprocal locking structure of the one locking tab assembly are utilized to assemble the top cover and the body is disposed on a first planar surface of the top cover, and another one of the locking tab and the reciprocal locking structure of the locking tab assembly is disposed on the body.
US07989690B1
Musical instrument pickups comprising a plurality of coil-wire wrappings, each coil-wire wrapping having a particular geometric cross-section. Related embodiments exhibiting noise cancellation features are also disclosed.
US07989677B2
Disclosed herein are nucleic acid molecules isolated from coffee (Coffea spp.) comprising sequences that encodes various sucrose metabolizing enzymes, along with their encoded proteins. Specifically, sucrose synthase, sucrose phosphate synthase and sucrose phosphatase enzymes and their encoding polynucleotides from coffee are disclosed. Also disclosed are methods for using these polynucleotides for gene regulation and manipulation of the sugar profile of coffee plants, to influence flavor, aroma, and other features of coffee beans.
US07989673B2
An apparatus subjects fluid waste to waves from an RF plasma. This allows continuous production of “activated water” characterized by cluster sizes below about 4 molecules per cluster, water having pH below 4 or above 10, or water having ORP of less than −350 mV or more than +800 mV. The basic frequency of the plasma is preferably between 0.44 MHz and 40.68 MHz, and the plasma is preferably modulated at a frequency between 10 kHz and 34 kHz. Flow rates typically range from 20 1/hr to about 2000 1 hr.
US07989668B2
Nitrogen-containing Lewis bases act as poisons for molecular sieve catalysts used in oligomerisation reactions. A lowering of their presence in the feed prior to the contacting thereof with the molecular sieve brings a significant extension of catalyst life. Excessive elimination of these poisons may be disadvantageous. Lowering the levels of these catalyst poisons to more manageable concentrations is therefore preferred.
US07989667B2
Disclosed is a novel process for the continuous crystallization of a mixture of cis-2,2,4,4-tetramethylcyclobutanediol and trans-2,2,4,4-tetramethylcyclobutanediol dissolved in a solvent.
US07989666B2
The present invention discloses a method for preparing bisphenol A, comprising the following steps: transferring phenol and acetone into a reaction zone charged with condensation catalyst, obtaining a stream containing bisphenol A after reaction; transferring the obtained stream containing bisphenol A into a rectification zone, obtaining a product fraction primarily containing bisphenol A and phenol; and transferring the product fraction primarily containing bisphenol A and phenol into a crystallization zone to obtain a bisphenol A product; wherein a water-depleted fraction primarily containing phenol, bisphenol A and acetone is obtained from the rectification zone, and said water-depleted fraction is cooled and returned as a cycled stream to the reaction zone. Through cycling the water-depleted fraction to the reaction zone, the water content within the reaction zone can be reduced, the catalytic activity can be maintained and the reaction temperature rise can be controlled, thus the conversion of acetone and the selectivity of reaction can be improved accordingly.
US07989663B2
Fluorogenic lysophosphatidic acid derivatives which can be used as substrates in a continuous, fluorogenic assay that can be performed in microtiter plates. The assays permit measuring LysoPLD activity levels in normal events such as pregnancy or disease states such as cancer. In addition, the present invention can be adopted to high throughout screening (HTS) for identification of potential inhibitors of lysoPLD activity.
US07989657B2
The invention is concerned with novel anthranilic acid derivatives of formula (I) wherein R1 to R14, m and n are as defined in the description and in the claims, as well as physiologically acceptable salts and esters thereof. These compounds are HM74A agonists and can be used as medicaments.
US07989653B2
This application discloses a novel process for the preparation of himbacine analogs useful as thrombin receptor antagonists. The process is based in part on the use of a base-promoted dynamic epimerization of a chiral nitro center. The chemistry taught herein can be exemplified by the following:
US07989651B2
Epoxysilanes are provided which contain at least one epoxy group, at least one hydrolyzable silyl group and one or more linkages containing a carbonyl group bonded to heteroatoms selected from the group consisting of oxygen, sulfur and nitrogen with at least one such heteroatom being nitrogen, there being no such linkage in which both an epoxy group and hydrolyzable silyl group are directly or indirectly bonded to the same nitrogen heteroatom in the linkage.
US07989643B2
The invention relates to the preparation of 2-(6-substituted-1,3-dioxane-4-yl)acetic acid derivatives of formula 1, where X stands for a leaving group, and R1, R2, and R3 each independently stand for an alkyl group with 1-3 carbon atoms from 4-hydroxy-6-X-substituted-methyl-tetrahydropyran-2-one compounds, where X is as defined above, with the aid of an acetalization agent, in the presence of an acid catalyst.The invention also relates to the novel compounds of formula 1 as well as salts and acids to be prepared from these, with the OR3 group in formula 1 being replaced by an OY group, where X, R1 and R2 have the meanings defined above and where Y stands for an alkaline (earth) metal or a substituted or unsubstituted ammonium group or stands for hydrogen, and to the novel compounds of formula 2.The products concerned are, after conversion into the t-butyl ester of 2-(6-hydroxymethyl-1,3-dioxane-4-yl)acetic acid, important as intermediary products in the preparation of statins.
US07989636B2
A process for the preparation of anastrozole which comprises: a) brominating 3,5-bis(2-cyanoprop-2-yl)toluene (II) in an organic solvent using a brominating agent to obtain 3,5-bis(2-cyanoprop-2-yl)benzylbromide (III); b) heating the reaction mass of step a) to the reflux temperature of the organic solvent for a period of time no longer than 3 hours; c) isolating and purifying the bromo intermediate (III) using an organic solvent; d) alkylating the bromo intermediate in the presence of a base, optionally a phase transfer catalyst, a 1,2,4-triazole and an organic solvent to obtain anastrozole; and e) isolating and purifying the anastrozole from an organic solvent.
US07989629B2
The present invention relates to a compound of formula (I), or a salt thereof wherein the naphthalene ring is substituted in the 2, 3, 4, 5, 6, 7 or 8 position by R1, and R1 represents —CH2CH2COOH or —CH═C(CH3)COOH, and to processes for their preparation, to compositions containing them and to their use in the treatment of various inflammatory and/or allergic diseases, such as diseases such as allergic rhinitis.
US07989628B2
The present invention is concerned with 2-aminoquinoline derivatives of formula I wherein Z, R1, and Ar1 are as defined herein, pharmaceutical compositions containing them, methods for their manufacture. The compounds are 5-HT5A receptor antagonists and are useful in the prevention and/or treatment of depression, anxiety disorders, schizophrenia, panic disorders, agoraphobia, social phobia, obsessive compulsive disorders, post-traumatic stress disorders, pain, memory disorders, dementia, disorders of eating behaviors, sexual dysfunction, sleep disorders, abuse of drugs, motor disorders such as Parkinson's disease, psychiatric disorders or gastrointestinal disorders.
US07989627B2
The present invention relates to a method for preparing an optically active cyclic alcohol compound represented by general formula [I]: [wherein R represents a hydrogen atom or a protecting group for amino group, and * represents an astymmetric carbon atom.] which comprises a step of subjecting a cyclic ketone compound represented by general formula [II]: [wherein R has the same meaning as defined above.]to asymmetric reduction (A) in the presence of an optically active oxazaborolidine compound and a boron hydride compound, or (B) in the presence of an asymmetric transition metal complex obtained from a transition metal compound and an asymmetric ligand and a hydrogen donor, and relates to said compound.
US07989622B2
The present invention comprises small molecule inhibitors of phosphatidylinositol 3-kinase (PI3K), which is associated with a number of malignancies such as ovarian cancer, cervical cancer, breast cancer, colon cancer, rectal cancer, and glioblastomas, among others. Accordingly, the compounds of the present invention are useful for treating, preventing, and/or inhibiting these diseases.
US07989615B2
The invention is a method for isolating a desired plasmid DNA isoform, typically a supercoiled isoform, which includes the steps of obtaining a quantity of bioreactor produced plasmid DNA in liquid form for purification, and passing the plasmid DNA through an ultrafiltration membrane at a selected filtrate flux.
US07989611B2
An expression control sequence which controls expression of a target gene linked downstream of the expression control sequence depending on an intracellular concentration of an amino acid, wherein in a bacterial cell which harbors a DNA construct comprising the expression control sequence, a promoter linked upstream of the expression control sequence and the target gene linked downstream of the expression control sequence, frequency of termination in the expression control sequence, of transcription starting from the promoter is lowered by increase of an intracellular concentration of an amino acid, whereby expression of the target gene increases.
US07989605B2
Compounds and methods for inducing protective immunity against tuberculosis are disclosed. The compounds provided include polypeptides that contain at least one immunogenic portion of one or more M. tuberculosis proteins and DNA molecules encoding such polypeptides. Such compounds may be formulated into vaccines and/or pharmaceutical compositions for immunization against M. tuberculosis infection, or may be used for the diagnosis of tuberculosis.
US07989604B2
Isolated nucleic acid sequences and amino acid sequences for soluble, β-N-acetylglucosaminidase or active fragments or variants thereof which promote detachment of bacterial cells from a biofilm are provided. An isolated mutant bacteria which forms biofilm colonies which tightly adhere to surface but which are unable to release cells into the medium or spread over the surface is also provided. In additions, methods are described for modulating detachment of bacterial cells from biofilm by mutating soluble, β-N-acetylglucosaminidase or altering its expression or activity are also provided. Also provided are compositions, methods and devices for preventing, inhibiting and treating bacterial infections.
US07989596B2
The binding specificity of a monoclonal antibody is altered by exposing the monoclonal antibody to an oxidizing agent or an electric potential.
US07989590B2
The present invention relates to a novel peptide having a specified amino acid sequence or its derivative, or a salt thereof. Further, the present invention relates to a composition containing the novel peptide or the like, a method of utilizing the novel peptide or the like, use of the novel peptide or the like, a polynucleotide encoding the novel peptide, or the like. The novel peptide of the present invention or its derivative, or a salt thereof can be utilized for enhancing production of at least one member selected from the group consisting of collagen and hyaluronic acid in a cell.
US07989584B2
The present invention relates to human Akt3 proteins and polypeptides. The invention also relates to isolated nucleic acids encoding human Akt3, to vectors containing them and to their therapeutic uses, in particular for gene therapy. Expression of Akt3 inhibits cell death associated with hypoxia, apoptosis or necrosis.
US07989579B2
A method for the production of a functionalized polytriazole polymer, particularly a poly(1,2,4-triazole)-polymer, includes the steps of (a) mixing a hydrazine salt, particularly hydrazine sulfate, with at least an aromatic and/or heteroaromatic dicarboxylic acid and/or at least a dicarboxylic acid derivate in polyphosphoric acid and if necessary further components for obtaining a solution; (b) heating the solution in a protective gas atmosphere for obtaining polyhydrazides and adding aromatic and/or heteroaromatic primary amines to the solution; and (c) precipitating a polymer. If necessary, neutralization in a basic solution may be carried out.
US07989569B2
Provided are a polyvinyl pyrrole host material emitting highly efficient phosphorescence, a luminescent layer using the material, and an organic electroluminescent display device. The polyvinyl pyrrole host material shows highly efficient luminescence having improved energy transfer, and thus is useful for an organic electroluminescent display device and other various light emitting devices.
US07989562B2
A system and method for olefin polymerization is provided. The method includes polymerizing one or more olefins within a reactor having one or more injection tubes in fluid communication therewith, at least one of the one or more injection tubes having two or more concentric flow paths; flowing a catalyst through a first flow concentric path of the injection tube into the reactor; flowing one or more monomers through a second concentric flow path of the injection tube into the reactor; measuring rate of heat removal within the reactor; and adjusting the one or more monomers flow through the injection tube in response to the rate of heat removal in the reactor.
US07989560B2
A polymer containing: a constitutional unit A that is derived from fluorosilsesquioxane having one addition polymerizable functional group in a molecule; a constitutional unit B that is derived from organopolysiloxane having an addition polymerizable functional group; and a constitutional unit C that is derived from an addition polymerizable functional monomer containing a group having active hydrogen, and optionally containing a constitutional unit D that is derived from an addition polymerizable monomer other than the fluorosilsesquioxane having one addition polymerizable functional group in a molecule, the organopolysiloxane having an addition polymerizable functional group and the addition polymerizable monomer containing a group having active hydrogen.
US07989557B2
The invention is a composition comprising a blend of two or more epoxide containing compositions selected from epoxidized vegetable oils, epoxidized alkyl esters or cycloaliphatic epoxides. In another embodiment, the invention is a blend of one or more epoxidized vegetable oils, epoxidized alkyl esters, or cycloaliphatic epoxides with one or more aromatic epoxides or epoxy functionalized polyoxyalkylene polyols.
US07989549B2
A polymer composition comprises a low-molecular-weight (LMW) ethylene polymer component and a high-molecular-weight (HMW) ethylene polymer component. Preferably, the LMW polyethylene component and the HMW polyethylene component co-crystallize in the composition such that it exhibits a single or substantially single peak in a lamella thickness distribution (“LTD”) curve. The ethylene polymer for the LMW and the HMW polyethylene components can be either homopolyethylene or ethylene copolymer. Preferably, both components are an ethylene copolymer of the same or different composition (i.e., with the same or different comonomers). A method of making a pipe that includes selecting a polymer composition having a substantially single peak in the LTD curve is described.
US07989544B2
Polymer capsules from amphiphilic graft copolymers comprising reactive, hydrophobic polyolefin backbones, and hydrophilic poly(ethylene glycol) (PEG) grafts are produced by self-assembly of the polymers at the oil-water interface, and crosslinking the assembly with bis-cyclooctene PEG derivatives in conjunction with ring-open metathesis polymerization catalysts. The use of the graft copolymer architecture in capsule synthesis provides significant opportunities to tune both the surface properties, in terms of recognition, and the membrane properties, in terms of mechanical strength, encapsulation, and release.
US07989542B2
A process for producing a thermoplastic elastomer composition comprising the steps of (1) heating dynamically (A) a defined ethylene-α-olefin random copolymer rubber, (B) a propylene homopolymer, or a defined copolymer of propylene with ethylene and/or an α-olefin, (C) a mineral oil softener, and (D) a crosslinking agent, and (2) melt-kneading the resultant product with a defined polypropylene resin (E); and a process for producing a foamed thermoplastic elastomer composition comprising the further step of melt-kneading said thermoplastic elastomer composition with (F) a foaming agent.
US07989540B2
A resin composition comprises a resin, a vulcanization-activating agent, and a stabilizer. The vulcanization-activating agent may be a compound having a plurality of polymerizable unsaturated bonds (e.g., a compound having a plurality of (meth)acryloyl groups). The stabilizer may be an antioxidant, or a light stabilizer (particularly, a stabilizer is capable of capturing a radical). Use of the resin composition as a resin material ensures to directly join between a resin and a rubber certainly and firmly. The proportion of the vulcanization-activating agent may be about 0.1 to 10 parts by weight relative to 100 parts by weight of the resin. The proportion of the stabilizer may be about 0.01 to 5 parts by weight relative to 100 parts by weight of the resin.The present invention provides a resin composition excellent in adhesiveness to a rubber.
US07989536B2
A polymeric nanocomposite comprises a non-polar hyperbranched polystyrene resin. An exfoliated or intercalated onium functionalized clay is dispersed within the resin. Such nanocomposites are more compatible with non-polar polymer matrices used in various articles of manufacture.
US07989527B2
The invention relates to polymer nanocomposites comprising synthesized lamellar nanoparticles dispersed in a polymer matrix. The lamellar nanoparticles are synthetically made in a one-step operation by supramolecular assembly of a surfactant and a inorganic precursor and are exfoliated inside the polymer matrix.
US07989525B2
An object of the present invention is to provide a pressure-sensitive adhesive composition which is excellent in antistatic property of a non-electrification-prevented adherend (subject to be protected) upon peeling, and has reduced stainability in an adherend and is excellent in adhesion reliance, and electrification preventing pressure-sensitive adhesive sheets using the same. There is provided a pressure-sensitive composition comprising an ionic liquid, and a (meth)acryl-based polymer containing, as a monomer component, 0.1 to 100% by weight of a (meth)acrylic acid alkylene oxide. There is provided a pressure-sensitive composition comprising an ionic liquid, and a polymer containing, as a monomer component, 0.5 to 30% by weight of a nitrogen-containing monomer and having a glass transition temperature Tg of no higher than 0° C. There is provided a pressure-sensitive composition comprising an ionic liquid, and a (meth)acryl-based polymer containing, as a monomer component, 0.01 to 20% by weight of a reactive surfactant.
US07989522B2
A biodegradable wax composition containing a wax as a main component and also containing a biodegradable polymer and a filler and having a moisture permeability of 3 g·mm/m2·24 hr or less at 40° C. and 90% RH. The wax is preferably present in an amount of 65 to 95% by weight. The biodegradable polymer preferably has a weight average molecular weight of 200,000 or higher. The polymer is preferably polyisoprene or natural rubber and is preferably present in an amount of 5 to 35% by weight.
US07989521B1
An object of the present invention is to provide a composition for forming an environment friendly antifouling coating film that is unlikely to cause a hairline crack and like coating film defects even when immersed in seawater for a long time, and that prevents or inhibits attachment of slime. An antifouling coating composition of the invention comprises: (A) a triorganosilyl ester-containing copolymer obtained by a mixture of (a) a triorganosilyl (meth)acrylate monomer represented by a general formula (1): R1 is a hydrogen atom or a methyl, and R2, R3, and R4 are equal or different each other, and each represent an alkyl group having 3 to 6 carbons and branched on α-position or a phenyl group, and (b) an ethylenically unsaturated monomer copolymerizable with the triorganosilyl (meth)acrylate monomer, (B) a modified rosin salt which is a salt of a modified rosin and zinc and/or copper, the modified rosin containing, in an amount of 80 weight % or more, two or more members selected from the group consisting of dihydroabietic acid, tetrahydroabietic acid, dehydroabietic acid, pimaric acid, isopimaric acid, and dihydropimaric acid.
US07989492B2
An object of the present invention is to provide a lipase activity inhibitor that shows high inhibitory activity against pancreatic lipase to suppress the absorption of meal-derived fat and/or which contributes to suppressing and preventing obesity, as well as a food or beverage that has such lipase activity inhibitor incorporated therein. Another object of the invention is to provide a lipase inhibitor of tea origin that suits most consumers' taste and which will not impair the flavor of the food or beverage when incorporated therein. Still another object of the invention is to provide a process for producing said lipase inhibitors. Further object of the invention is to provide antioxidants. To attain these objects, epigallocatechin dimers (oolong homobisflavans) or trimers are incorporated in foods or beverages. As a result, the absorption of meal-derived fat can be suppressed and, in addition, antioxidation effect is obtained. The compounds of the invention can be produced by reacting epigallocatechin gallate with formaldehyde in the presence of an acid.
US07989473B2
The invention relates to a pharmaceutical composition comprising a pharmaceutically acceptable salt of N-ethyl-N-phenyl-1,2,-dihydro-4-hydroxy-5-chloro-1-methyl-2-oxoquinoline-3-carboxamide, N-methylglucamine, and a pharmaceutically acceptable carrier.
US07989466B2
Isolated and purified chemokine peptides, variants, and derivatives thereof, as well as chemokine peptide analogs, are provided.
US07989460B2
The present invention relates to compounds of the formula I: wherein: ring C is an 8, 9, 10, 12 or 13-membered bicyclic or tricyclic moiety which moiety may be saturated or unsaturated, which may be aromatic or non-aromatic, and which optionally may contain 1-3 heteroatoms selected independently from O, N and S; is —O— —NH— or —S—; is 0, 1, 2, 3, 4 or 5; is 0, 1, 2 or 3; and R2 and R1 are as defined herein; and salts thereof; their use in the manufacture of a medicament for use in the production of an antiangiogenic and/or vascular permeability reducing effect in warm-blooded animals; processes for the preparation of such compounds; pharmaceutical compositions containing a compound of formula I or a pharmaceutically acceptable salt thereof and methods of treating disease states involving angiogenesis by administering a compound of formula I or a pharmaceutically acceptable salt thereof. The compounds of formula I inhibit the effects of VEGF, a property of value in the treatment of a number of disease states including cancer and rheumatoid arthritis.
US07989456B2
The present invention relates to compounds useful as inhibitors of protein kinases. The invention also provides pharmaceutically acceptable compositions comprising those compounds and methods of using the compounds and compositions in the treatment of various disease, conditions, and disorders. The invention also provides processes for preparing compounds of the inventions.
US07989454B2
Provided herein are compounds of the formula (I): as well as pharmaceutically acceptable salts thereof, wherein the substituents are as those disclosed in the specification. These compounds, and the pharmaceutical compositions containing them, are useful for the treatment of diseases such as, for example, COPD.
US07989451B2
The invention relates to novel tricyclic 1,2,4-triazine-1-oxides and novel tricyclic 1,2,4-triazine-1,4-dioxides of formula I and to related analogues, to their preparation, and to their use as hypoxia-selective drugs and radiosensitizers for cancer therapy, both alone or in combination with radiation and/or other anticancer drugs.
US07989442B2
The present invention provides new progesterone receptor modulators which are (cis)-8-fluorodibenzo[b,f]pyrido[1,2-d]oxazepine-1-amine compounds and uses thereof.
US07989440B2
A metal coordination complex of a biologically active moiety and a metal is disclosed. The complex confers to the biologically active moiety an improved performance which can include potency, stability, absorbability, targeted delivery, and combinations thereof.
US07989435B2
The present invention provides a chemical compound or a salt thereof having the chemical formula of: wherein said R is H or citrate and wherein at least one R is citrate. The salt of the chemical compound is the Na+, K+, Mg2+, or Ca2+ salt of said chemical compound. The chemical compound is a chelator which chelates sodium, potassium or lithium, magnesium, calcium, copper, iron, lead, zinc, aluminum, mercury, cadmium, or chromium. It is also be used as an artery plaque dissolver and/or to treat age-related degenerative disorders, such as Alzheimer's disease. The present invention also provides a method for producing the phytic citrate compound and/or its salt.
US07989428B2
A method and kit for inhibiting the proliferation of cancer cells are disclosed, based on a combination of a gemcitabine and a telomerase inhibitor. When used in cancer therapy, the two compounds in combination enhance the anti-cancer treatment efficacy obtained with gemcitabine alone or the telomerase inhibitor alone. Preferably, efficacy is supraadditive or synergistic in nature relative to the combined effects of the individual agents, with minimal exacerbation of side effects.
US07989420B2
The invention relates to methods of inducing smooth muscle relaxation, for example, a method of inducing relaxation of a vascular or a non-vascular muscle or a method of inducing relaxation of the microvasculature, in a subject in need thereof by promoting the accumulation of protoporphyrin IX in the smooth muscle.
US07989402B2
An aqueous drilling fluid which contains a diquaternary ammonium cation functionalized clay which provides a substantially constant rheological profile, with respect to salinity, when incorporated into well drilling fluids. A clay/organic chemical composition includes: (a) montmorillonite clay and (b) one or more diquaternary ammonium compounds. A further aspect of the invention is a well drilling process which employs a drilling fluid containing the diquaternary ammonium cation functionalized clay described hereafter.
US07989400B2
The invention provides a method for treating a subterranean formation penetrated by a wellbore, the method comprising the steps of formulating a treatment fluid and introducing the treatment fluid through the wellbore. The treatment fluid comprises water; diutan; and a sufficient amount of salt to increase the density of the treatment fluid to at least 8.5 lb/gal, wherein at least 50% by weight of the salt is selected from the group consisting of: bromide salts, non-bromide salts having a higher salting-in effect than bromide according to the Hofmeister series as measured by the salt's effect on the cloud point of poly(ethylene oxide) that has a molecular weight of 4×106, and any combination in any proportion thereof. The invention also provides a treatment fluid for use in a subterranean formation penetrated by a wellbore, the treatment fluid comprising: water; diutan; and a sufficient amount of salt to increase the density of the treatment fluid to at least 8.5 lb/gal, wherein at least 50% by weight of the salt is selected from the group consisting of: bromide salts, non-bromide salts having a higher salting-in effect than bromide according to the Hofmeister series as measured by the salt's effect on the cloud point of poly(ethylene oxide) that has a molecular weight of 4.106, and any combination in any proportion thereof.
US07989398B2
Pumpable multiple phase vesicle compositions carry agents and components downhole or through a conduit, and controllably releasing them at a different place and time by breaking the compositions. In one non-limiting embodiment the pumpable multiple phase vesicles have a third phase containing a first phase which bears the agent to be controllably released. The first and third phases of the vesicles are separated by a surface active material bilayer that forms the second phase. The pumpable multiple phase vesicles may have internal and external phases that are both oil miscible, both aqueous miscible, or both alcohol miscible. The surface active material bilayer may be composed of compounds such as phospholipids, alkyl polyglycosides, gemini surfactants, sorbitan monooleate, sorbitan trioleate, and many others. The agent may be released by one or more of a variety of mechanisms.
US07989384B2
Use of physical vapor deposition methodologies to deposit nanoscale gold on activating support media makes the use of catalytically active gold dramatically easier and opens the door to significant improvements associated with developing, making, and using gold-based, catalytic systems. The present invention, therefore, relates to novel features, ingredients, and formulations of gold-based, heterogeneous catalyst systems generally comprising nanoscale gold deposited onto a nanoporous support.
US07989383B2
A catalyst composition for the polymerization of propylene comprising one or more Ziegler-Natta procatalyst compositions comprising one or more transition metal compounds and one or more esters of aromatic dicarboxylic acid internal electron donors; one or more aluminum containing cocatalysts; a selectivity control agent (SCA) comprising at least one silicon containing compound containing at least one C1-10 alkoxy group bonded to a silicon atom, and one or more activity limiting agent (ALA) compounds comprising one or more aliphatic or cycloaliphatic carboxylic acids; alkyl-, cycloalkyl- or alkyl(poly)(oxyalkyl)-(poly)ester derivatives thereof; or inertly substituted derivatives of the foregoing.
US07989380B2
A dense silicon carbide (SiC) material with boron (B), nitrogen (N) and oxygen (O) as the only additives and with excellent insulting performance (electrical volume resistivity greater than 1×108 Ω·cm). The SiC ceramic material, made from a powder mix of, by weight, from 0.1 to 7% boron carbide, from 0.1 to 7% silicon nitride, from 0.1 to 6% silicon dioxide, and a balance of α-SiC, consists essentially of (1) at least 90% by weight of α-SiC, (2) about 0.3 to 4.0% by weight of boron, (3) about 0.1 to 6.0% by weight of nitrogen, (4) about 0.06 to 0.5% by weight of oxygen, and (5) no more than 0.07% by weight of metallic impurities; wherein the boron and nitrogen are present according to an B/N atomic ratio of 0.9 to 1.5. In particular, this material is suitable for applications in plasma etching chambers for semiconductor and integrated circuit manufacturing.
US07989379B2
The present invention provides a glass having a refractive index and a coefficient of thermal expansion close to those of quartz glass, respectively, and also having anti-devitrification properties excellent enough to avoid the development of defects such as devitrification on the glass surface even when it is molded by drawing process or reheat forming, more specifically an optical glass for use in optical communication devices, particularly an optical glass for use in a stub.The optical glass of the invention is composed of a borosilicate glass having a refractive index of from 1.44 to 1.46, a coefficient of thermal expansion of from 10×10−7 to 50×10−7/° C., and a liquidus viscosity of 105.5 dPa·s or more.
US07989377B2
Provided is an optical glasses that has high refractivity and low dispersion and anomalous partial dispersion capability and that has excellent processability and devitrification resistance and ensures that the occurrence of striae can be inhibited, the optical glass including an optical glass having a refractive index (nd) of 1.54 to 1.60, an Abbe's number (vd) of 65 to 78, a partial dispersion ratio of 0.530 or more, a specific gravity of 4.0 or less and a viscosity, measured at its liquidus temperature, of 4 dPa·s or more and an optical glass comprising as cationic components, by cationic %, 20 to 50% of p5+, 0.1 to 20% of Al3+, 0.1 to 20% of Mg2+, 0 to 20% of Ca2+, 0 to 20% of Sr2+, 0.1 to 30% of Ba2+ and 0 to 10% of Y3+, and further comprising, as anionic components, F− and O2−, wherein the ratio of the content of Mg2+ to the content of Al3+, Mg2+/Al3+, based on cationic %, is 1.2 or less.
US07989375B2
An object is to provide a readily fusible glass fiber composition that can alleviate environmental problem and reduce raw material cost by decreasing boron content, and that can facilitate the manufacturing of fine-count glass filament. A glass fiber composition of the present invention is an oxide glass composition, and has compositions of 0.01 to 3% of P2O5, 52 to 62% of SiO2, 10 to 16% of Al2O3, 0 to 8% of B2O3, 0 to 5% of MgO, 16 to 30% of CaO, and 0 to 2% of R2O(R═Li+N+K), which are in terms of oxide represented in mass percentage.
US07989363B2
A method for fabricating semiconductor devices, e.g., SONOS cell. The method includes providing a semiconductor substrate (e.g., silicon wafer, silicon on insulator) having a surface region, which has a native oxide layer. The method includes treating the surface region to a wet cleaning process to remove a native oxide layer from the surface region. In a specific embodiment, the method includes subjecting the surface region to an oxygen bearing environment and subjecting the surface region to a high energy electromagnetic radiation having wavelengths ranging from about 300 to about 800 nanometers for a time period of less than 10 milli-seconds to increase a temperature of the surface region to greater than 1000 Degrees Celsius. In a specific embodiment, the method causes formation of an oxide layer having a thickness of less than 10 Angstroms. In a preferred embodiment, the oxide layer is substantially free from pinholes and other imperfections. In a specific embodiment, the oxide layer is a gate oxide layer.
US07989361B2
This invention pertains to a composition for a dielectric thin film, which is capable of being subjected to a low-temperature process. Specifically, the invention is directed to a metal oxide dielectric thin film formed using the composition, a preparation method thereof, a transistor device comprising the dielectric thin film, and an electronic device comprising the transistor device. The electronic device to which the dielectric thin film has been applied exhibits excellent electrical properties, thereby satisfying both a low operating voltage and a high charge mobility.
US07989360B2
Some embodiments include methods for semiconductor processing. A semiconductor substrate may be placed within a reaction chamber. The semiconductor substrate may have an inner region and an outer region laterally outward of said inner region, and may have a deposition surface that extends across the inner and outer regions. The semiconductor substrate may be heated by radiating thermal energy from the outer region to the inner region. The heating may eventually achieve thermal equilibrium. However, before thermal equilibrium of the outer and inner regions is reached, and while the outer region is warmer than the inner region, at least two reactants are sequentially introduced into the reaction chamber. The reactants may together form a single composition on the deposition surface through a quasi-ALD process.
US07989356B2
A semiconductor device has a first conductive layer formed over a substrate. A first insulating layer is formed over the first conductive layer. A second conductive layer is formed over first insulating layer and first conductive layer. A third insulating layer is formed over the second insulating layer and second conductive layer. An under bump metallization layer (UBM) is formed over the third insulating layer and second conductive layer. A UBM build-up structure is formed over the UBM. The UBM build-up structure has a sloped sidewall and is confined within a footprint of the UBM. The UBM build-up structure extends above the UBM to a height of 2-20 micrometers. The UBM build-up structure is formed in sections occupying less than an area of the UBM. A solder bump is formed over the UBM and UBM build-up structure. The sections of the UBM build-up structure provide exits for flux vapor escape.
US07989355B2
The present disclosure provides a method of fabricating a semiconductor device that includes forming a mask layer over a substrate, forming a dummy layer having a first dummy feature and a second dummy feature over the mask layer, forming first and second spacer roofs to cover a top portion of the first and second dummy features, respectively, and forming first and second spacer sleeves to encircle side portions of the first and second dummy features, respectively, removing the first spacer roof and the first dummy feature while protecting the second dummy feature, removing a first end portion and a second end portion of the first spacer sleeve to form spacer fins, and patterning the mask layer using the spacer fins as a first mask element and the second dummy feature as a second mask element.
US07989348B2
A polishing method that carries out a multi-step polishing process with improved polishing conditions (polishing recipe) while omitting measurement of the surface conditions of a substrate, as carried out between polishing steps thereby increasing the throughput. The polishing method for polishing workpieces by repeating the sequential operations of taking a workpiece out of a cassette in which a plurality of workpieces are stored, carrying out multi-step polishing of a surface of the workpiece and returning the workpiece to the cassette, includes carrying out one of the following two polishing processes for the workpiece taken out of the cassette: a first polishing process comprising carrying out the multi-step polishing under preset conditions and measurement of the surface of the workpiece before and after each polishing step; and a second polishing process comprising carrying out a predetermined step of the multi-step polishing under polishing conditions which have been modified based on the results of the measurement.
US07989341B2
A method for creating a dual damascene structure while using only one lithography and masking step. Conventional dual damascene structures utilize two lithography steps: one to mask and expose the via, and a second step to mask and expose the trench interconnection. The novel method for creating a dual damascene structure allows for a smaller number of processing steps, thus reducing the processing time needed to complete the dual damascene structure. In addition, a lower number of masks may be needed. The exemplary mask or reticle used within the process incorporates different regions possessing different transmission rates. During the exposing step, light from an exposing source passes through the mask to expose a portion of the photoresist layer on top of the wafer. Depending on the transmission rate of the different regions, different thickness of the photoresist layer are exposed and later removed by a developing solution, which allows a subsequent etch process to remove portions of both the dielectric layer and photoresist layer to create a dual damascene structure.
US07989333B2
Methods of forming integrated circuit devices include forming a gate electrode on a substrate and forming a nitride layer on a sidewall and upper surface of the gate electrode. The nitride layer is then anisotropically oxidized under conditions that cause a first portion of the nitride layer extending on the upper surface of the gate electrode to be more heavily oxidized relative to a second portion of the nitride layer extending on the sidewall of the gate electrode. A ratio of a thickness of an oxidized first portion of the nitride layer relative to a thickness of an oxidized second portion of the nitride layer may be in a range from about 3:1 to about 7:1.
US07989317B2
To provide a manufacturing method of a semiconductor device in which manufacturing cost can be reduced, and a manufacturing method of a semiconductor device with reduced manufacturing time and improved yield. A manufacturing method of a semiconductor device is provided, which includes the steps of forming a first layer containing a metal over a substrate, forming a second layer containing an inorganic material on the first layer, forming a third layer including a thin film transistor on the second layer, irradiating the first layer, the second layer, and the third layer with laser light to form an opening portion through at least the second layer and the third layer.
US07989315B2
When printing is performed on a base substrate with a laser after a single crystal silicon layer is transferred to the base substrate, there are problems such as ablation of the single crystal silicon layer in the peripheral portion of a printed dot or attachment of glass chips or the like to the surface of the single crystal silicon layer. After printing is performed on the bonding surface of a silicon wafer with a laser, the surface of the silicon wafer is polished by CMP (chemical mechanical polishing), so that the projection in the peripheral portion of the printed dot is removed. After that, the silicon wafer is bonded to the base substrate. Since the depression of the printed dot remains to some extent by a chemical etching effect even after the polishing by CMP, the single crystal silicon layer is not transferred only at the depression portion at the time of the transfer; accordingly, the information is left on the base substrate.
US07989312B2
A semiconductor structure and method of fabricating the structure. The method includes removing the backside silicon from two silicon-on-insulator wafers having devices fabricated therein and bonding them back to back utilizing the buried oxide layers. Contacts are then formed in the upper wafer to devices in the lower wafer and wiring levels are formed on the upper wafer. The lower wafer may include wiring levels. The lower wafer may include landing pads for the contacts. Contacts to the silicon layer of the lower wafer may be silicided.
US07989307B2
Methods of pitch doubling of asymmetric features and semiconductor structures including the same are disclosed. In one embodiment, a single photolithography mask may be used to pitch double three features, for example, of a DRAM array. In one embodiment, two wordlines and a grounded gate over field may be pitch doubled. Semiconductor structures including such features are also disclosed.
US07989306B2
Semiconductor structures and methods of forming semiconductor structures, and more particularly to structures and methods of forming SiGe and/or SiGeC buried layers for SOI/SiGe devices. An integrated structure includes discontinuous, buried layers having alternating Si and SiGe or SiGeC regions. The structure further includes isolation structures at an interface between the Si and SiGe or SiGeC regions to reduce defects between the alternating regions. Devices are associated with the Si and SiGe or SiGeC regions.
US07989303B2
In an embodiment, a method of creating an alignment mark on a substrate includes forming a plurality of lines segmented into electrically conducting line segments and space segments, thereby forming spaces between the lines to form a macroscopic structure in a first layer of the substrate, creating a plurality of electrically conducting trenches in a second layer of the substrate, and arranging the plurality of trenches to be in electrical contact with the line segments and overlapping the space segments at least partially.
US07989289B2
Floating gate structures are generally described. In one example, an electronic device includes a semiconductor substrate, a tunnel dielectric coupled with the semiconductor substrate, and a floating gate structure comprising at least a first region having a first electron energy level or electron workfunction or carrier capture efficiency coupled with the tunnel dielectric and a second region having a second electron energy level or electron workfunction or carrier capture efficiency coupled with the first region wherein the first electron energy level or electron workfunction or carrier capture efficiency is less than the second electron energy level or electron workfunction or carrier capture efficiency. Such electronic device may reduce the thickness of the floating gate structure or reduce leakage current through an inter-gate dielectric, or combinations thereof, compared with a floating gate structure that comprises only polysilicon.
US07989280B2
A Group III-V Semiconductor device and method of fabrication is described. A high-k dielectric is interfaced to a confinement region by a chalcogenide region.
US07989272B2
A conventional composition of carbon nitride has a deposition method and properties limited. In the case of using the composition of carbon nitride as a protective film, for example, a material of an object to be coated (goods) is required to satisfy with a condition in disagreement with a temperature during forming the composition of carbon nitride. Besides, in the case of using the composition of carbon nitride as an insulating film in a semiconductor device, low stress relaxation and low coverage for a step are produced since the insulating film has a low hydrogen concentration. Consequently, a composition including carbon nitride according to the present invention is formed at a deposition temperature that enables to include hydrogen in the composition at 30 to 45 atomic %, for example, at temperatures of 100° C. or less, preferably 50° C. or less, more preferably from 20° C. to 30° C., with stability and adhesiveness kept.
US07989270B2
A semiconductor device is made by forming a plurality of conductive pillars vertically over a temporary carrier. A conformal insulating layer is formed over the conductive pillars. A conformal conductive layer is formed over the conformal insulating layer. A first conductive pillar, conformal insulating layer, and conformal conductive layer constitute a vertically oriented integrated capacitor. A semiconductor die or component is mounted over the carrier. An encapsulant is deposited over the semiconductor die or component and around the conformal conductive layer. A first interconnect structure is formed over a first side of the encapsulant. The first interconnect structure includes an integrated passive device. The first interconnect structure is electrically connected to the semiconductor die or component and vertically oriented integrated capacitor. The carrier is removed. A second interconnect structure is formed over a second side of the encapsulant opposite the first side of the encapsulant.
US07989269B2
A semiconductor device is made by mounting a first semiconductor die to a first substrate, forming a first encapsulant over the first semiconductor die, and forming a second encapsulant over the first encapsulant. The second encapsulant is penetrable, thermally conductive material. A second semiconductor die is mounted to the second substrate. A bond wire electrically connects the second semiconductor die to the second substrate. A passive circuit element is mounted to the second substrate. Leading with the second encapsulant, the first substrate is pressed onto the second substrate so that the second encapsulant completely covers the second semiconductor die, bond wire, and passive circuit element. The second encapsulant is then cured. A third encapsulant is formed over the first and second substrates. A shield can be disposed over the second semiconductor die with openings for the second encapsulant to flow through when pressed onto the second substrate.
US07989262B2
Embodiments disclosed herein generally include methods of sealing a cavity in a device structure. The cavity may be opened by etching away sacrificial material that may define the cavity volume. Material from below the cavity may be sputter etched and redeposited over and in passageways leading to the cavity to thereby seal the cavity. Material may be sputter etched from above the cavity and redeposited in the passageways leading to the cavity as well. The sputter etching may occur in a substantially inert atmosphere. As the sputter etching is a physical process, little or no sputter etched material will redeposit within the cavity itself. The inert gases may sweep out any residual gases that may be present in the cavity after the cavity has been opened. Thus, after the sputter etching, the cavity may be substantially filled with inert gases that do not negatively impact the cavity.
US07989251B2
A variable resistance memory element and method of forming the same. The memory element includes a substrate supporting a bottom electrode having a small bottom contact area. A variable resistance material is formed over the bottom electrodes such that the variable resistance material has a surface that is in electrical communication with the bottom electrode and a top electrode is formed over the variable resistance material. The small bottom electrode contact area reduces the reset current requirement which in turn reduces the write transistor size for each bit.
US07989245B2
An image sensor includes a first conductivity type substrate with a trench formed in a predetermined portion thereof, a second conductivity type impurity region formed in the first conductivity type substrate below the trench and being a part of a photodiode, a second conductivity type first epitaxial layer filling the trench and being a part of the photodiode, and a first conductivity type second epitaxial layer formed over the second conductivity type first epitaxial layer.
US07989240B2
A method of manufacturing an active matrix substrate that enables increased productivity due to a reduction in the number of patterning processes and low generation of particles during the patterning processes. The method includes forming a patterned electrode on a substrate, and covering the first electrode with an insulating film. A mono-crystalline semiconductor layer is then formed on the insulating film by attaching a first layer formed on a surface of a semiconductor wafer to the first insulating film, and peeling off a portion of the semiconductor wafer. The semiconductor layer is then patterned and doped, in part, by utilizing the patterned electrode as a photo mask for light illuminated from a lower side of the substrate. This results in part in mono-crystalline active layers for thin film transistors, which are then configured to form a pixel for an active matrix substrate.
US07989233B2
A semiconductor nanowire having two semiconductor pads on both ends is suspended over a substrate. Stress-generating liner portions are formed over the two semiconductor pads, while a middle portion of the semiconductor nanowire is exposed. A gate dielectric and a gate electrode are formed over the middle portion of the semiconductor nanowire while the semiconductor nanowire is under longitudinal stress due to the stress-generating liner portions. The middle portion of the semiconductor nanowire is under a built-in inherent longitudinal stress after removal of the stress-generating liners because the formation of the gate dielectric and the gate electrode locks in the strained state of the semiconductor nanowire. Source and drain regions are formed in the semiconductor pads to provide a semiconductor nanowire transistor. A middle-of-line (MOL) dielectric layer may be formed directly on the source and drain pads.
US07989232B2
Embodiments provide a method and device for electrically monitoring trench depths in semiconductor devices. To electrically measure a trench depth, a pinch resistor can be formed in a deep well region on a semiconductor substrate. A trench can then be formed in the pinch resistor. The trench depth can be determined by an electrical test of the pinch resistor. The disclosed method and device can provide statistical data analysis across a wafer and can be implemented in production scribe lanes as a process monitor. The disclosed method can also be useful for determining device performance of LDMOS transistors. The on-state resistance (Rdson) of the LDMOS transistors can be correlated to the electrical measurement of the trench depth.
US07989227B2
An FOM (figure of merit) enabling evaluation from a cost aspect, as well as evaluation of electrical performance, is newly proposed to provide a method of manufacturing based on the FOM a semiconductor chip intended for a lower cost production in addition to satisfying electrical performance. An FOMC of a semiconductor chip is defined as the product of a term represented by electrical performance of a substrate S and a term represented by a semiconductor chip cost CC; the FOMC of each of the semiconductor chips on substrates SS, SC of different type is determined by calculation of the product thereof. Based on the magnitudes of the calculation results, a desired substrate is selected from the substrates SS, SC and then a semiconductor chip is fabricated by forming a semiconductor element on the desired substrate selected.
US07989226B2
A method and apparatus for distributing clock signals throughout an integrated circuit is provided. An embodiment comprises a distribution die which contains either the clock signal distribution network by itself, or the clock signal distribution network in tandem with a clock signal generator. The distribution die is electrically connected through an interface technology, such as microbumps, to route the clock signals to the functional circuits on a separate functional die. Alternatively, the distribution die could be electrically connected to more than one die at a time, using vias through the distribution die to route the clock signals to the different die. This separate distribution die reduces the coupling between lines and also helps to prevent signal skew as the signal moves through the distribution network.
US07989219B2
A capturing molecule having an association containing a plurality of polypeptide chains that specifically bind to different sites of a target substance, characterized in that each of the polypeptide chains has a domain having a hypervariable loop structure at a binding site binding to the target substance and an association portion for forming the association, and the polypeptide chains are associated via the association portions present in the polypeptide chains.
US07989213B2
Disclosed are Surface Enhanced Resonance Raman Spectroscopy (SERRS) probes and their use in detection methods for bioassays. Further disclosed is signal optimization of surface enhanced resonance Raman probes achieved by chemical modification of the probes. Also disclosed are methods for increasing the Raman cross-section by varying the chemical composition of a linker group linking a signal molecule to a nanoparticle surface. The signal molecules, such as dyes, may be modified with a linker group designed to both enhance the SERRS signal and to couple the signal molecule to the nanoparticle surface.
US07989203B2
This invention relates to methods and compositions useful for delivering antigens to dendritic cells which are then useful for inducing antigen-specific cytotoxic T lymphocytes and T helper cells. This invention also provides assays for evaluating the activity of cytotoxic T lymphocytes. According to the invention, antigens are targeted to dendritic cells by apoptotic cells which may also be modified to express non-native antigens for presentation to the dendritic cells. The dendritic cells which are primed by the apoptotic cells are capable of processing and presenting the processed antigen and inducing cytotoxic T lymphocyte activity or may also be used in vaccine therapies.
US07989199B2
Systems and methods for automatically controlling conditions of a process are disclosed. In one example, a controller is programmed with a sequence of steps and parameters required to carry out a bioreactor process. The controller receives information related to a condition of the process over a first communication network, determines a control signal based on the received information and the programmed process, and sends the control signal over a second communication network to a benchtop utility tower. In one example, the utility tower can include transmitters for temperature, pH, and dissolved oxygen that send information related to a condition of the process to the controller over the first communication network, and an agitation system, a gas control system, a temperature control system and a pump control system that perform a control action based on the control signal affecting the process condition. The utility tower can include a computer with a human-machine interface that communicates with the controller over a third communication network.
US07989194B2
A recombinant bacterium capable to completely degrade or mineralize pollutants such as polychlorobiphenyls (PCBs), which corresponds to Cupriavidus necator strain JMS34, deposited under the access number NRRL B-30817 a product for the bioremediation of environments contaminated with PCBs, where the product includes a bacterial inoculum of this recombinant strain and a method for the bioremediation of environments contaminated with PCBs, which uses this product for the bioremediation.
US07989181B2
The invention relates to host cells with improved protein expressed properties. The host cells comprise rare tRNA genes within the one or more rRNA operons.
US07989164B2
Method and apparatus which uses harmonic cantilevers, such as used in atomic force microscopy, to detect variations in the attractive and repulsive forces on a solid surface as a result of macromolecular binding, for example, hybridization of a single stranded DNA molecule attached to the surface with another DNA molecule. The complexed macromolecule is less flexible than an uncomplexed molecule. It will typically have more negative charge due to amino acids or DNA monomers. Both stiffness of the surface and the attractive capillary forces will change after binding and may be detected. By scanning the harmonic cantilever across a surface with macromolecules attached in tapping-mode and by recording the signals at the high frequency vibrations provided by harmonic cantilever, complexed molecules on a surface may be identified and quantified.
US07989161B2
A method for determining sensitivity or resistance of isolates of HIV (human immunodeficiency virus) retroviruses to chemical molecules having an inhibiting activity on a viral protease or to therapeutic treatments based on inhibitors of the viral protease, including causing cell lysis of at least one yeast by expression of the retrovirus protease.
US07989154B2
A method of fabricating a polymer or resist pattern over a substrate includes coating a photosensitive polymer or resist over the substrate to form a polymer or resist layer, determining a portion of the polymer or resist layer to be exposed to light, placing a light adjusting layer in an optical path of light shone on the polymer or resist layer, and adjusting the light adjusting layer to adjust a direction or intensity of the light shone on the polymer or resist layer. Based on the method, it is easy to fabricate a polymer or resist pattern, a metal film pattern, metal pattern structure, and a polymer mold, each having three-dimensional structures with various slopes or shapes by adjusting a direction or intensity of incident light when performing a lithography process.
US07989151B2
A method to enhance resolution in optical lithography via absorbance-modulation involves exposing an opaque absorbance modulation layer (AML) to a first waveform having wavelength, 81, with the first exposure forming a first set of transparent regions in the opaque AML and forming a first pattern made of a set of exposed regions in a photoresist layer. Next, the AML is restored to its original opaque state. Next, the restored AML is re-exposed to the first waveform having wavelength, 81, with the exposure forming a second set of transparent regions in the opaque AML and forming a second pattern having a set of exposed regions in a photoresist layer. The first and second patterns in the photoresist layer form a final pattern with enhanced resolution and decreased spatial period than the first pattern. In another scenario, instead of exposing the AML to a first waveform, two waveforms are used (the second being complimentary to the first) to ensure that the transmitted image has sharper edges compared to the original image.
US07989146B2
A method for producing a patterned material for electronic or photonic circuits, comprising the steps of: p) providing a substrate; q) coating the substrate with a polymer layer; r) coating a thermal resist solution over the polymer layer to form a thermal resist layer, wherein the polymer layer is substantially immiscible in the thermal resist solution; s) exposing predetermined areas of the thermal resist layer, corresponding to a desired image pattern, using infrared light; t) removing portions of the thermal resist layer corresponding to a desired image pattern, using a developer; u) removing the polymer layer where the thermal resist layer has been previously removed and undercutting a portion of the remaining thermal resist layer by an etching process; v) depositing a material using a substantially anisotropic process; and removing the remaining thermal resist layer and any overlying material with a solvent for the polymer or thermal resist layers leaving the material in a desired pattern.
US07989145B2
A method for forming a fine pattern of a semiconductor device comprises forming a spin-on-carbon layer over an underlying layer, forming an anti-reflection pattern including a silicon containing polymer with a first etching mask pattern, forming a photoresist pattern including a silicon containing polymer with a second etching mask pattern between elements of the first etching mask pattern, and etching the spin-on-carbon layer with the etching mask patterns to reduce the process steps and the manufacturing cost, thereby obtaining a uniform pattern profile.
US07989142B2
An exemplary method for fabricating a TFT array substrate includes providing an insulating substrate (201); coating a gate metal layer (202) on the substrate; forming a plurality of gate electrodes (212) using a first photo-mask process; forming a gate insulating layer (203), a semiconducting layer (205), and a source/drain metal layer (206) on the substrate having the gate electrodes; forming a plurality of source electrodes (217) and a plurality of drain electrodes (218) using a second photo-mask process; forming a passivation material layer (209) and a photo resist layer on the gate insulating layer, the source electrodes and the drain electrodes; forming a passivation layer (219) and the photo resist pattern (234) using a third photo-mask process; forming a transparent conductive metal layer (204) on the photo resist pattern, the drain electrode and the gate insulating layer; and forming a pixel electrode (214) through removing the photo resist pattern.
US07989139B2
The azo-metal chelate dye to which the present invention is applied is a compound formed as follows: for example, 1,3,4-thiadiazole ring is selected as the diazo component; the diazo component is combined with a coupler component having condensed rings including a fluorine-substituted alkylsulfonylamino group and an amino group, to form an azo dye compound; and the azo dye compound forms chelate bonds with at least one metal selected from the group consisting of Co, Ni, Cu and Pd. Here, two absorption bands (OD1 and OD2) are seen in the absorption spectrum, which is measured in a range of 400 to 800 nm wavelengths. The azo-metal chelate dye is characterized in that the optical density ratio (OD2/OD1) of the two absorption bands is greater than 1.25. By using this azo-metal chelate dye, an optical recording medium capable of high-speed recording is provided.
US07989132B2
An image sheet forming method includes supplying a first sheet including a non-transparent layer, and transferring a toner image onto a toner image carrying surface of the first sheet. The method further includes integrating a second sheet, which includes a base layer and a transparent layer, with the first sheet in a manner that the toner image is sandwiched between the toner image carrying surface of the first sheet and the transparent layer of the second sheet. The method further includes separating the base layer from the second sheet while fixing the toner image.
US07989129B2
A photoconductor that includes, for example, a supporting substrate, a photogenerating layer, and at least one charge transport layer that contains at least one charge transport component, and where the photogenerating layer contains a hydroxyquinoline.
US07989118B2
A method of manufacturing a fuel cell stack is provided. The method provides forming an inspectable preassembly of multiple fuel cell assemblies that may be termed a pseudostack. Each fuel cell in the pseudostack has permanent electrical interconnections and sealing connections on only one of the two electrodes, namely an anode layer or a cathode layer. For example, an anode interconnect may be firmly attached to the anode layer by means of a bonding agent and a sealing agent used to seal passages on the anode layer of the fuel cell. Alternatively, seals and permanent electrical connections may be made on the cathode layer of the fuel cell, and not on the anode layer.
US07989112B2
A fuel cell system includes a fuel cell having a membrane, which is adapted to perform power generation by a chemical reaction of two reaction gases each supplied to one side of the membrane, reaction gas paths through which the two reaction gases flow, a purge device for purging at least one of the two reaction gases from the reaction gas paths, a monitoring device for monitoring a state of the fuel cell after stopping of the power generation in the fuel cell, and a control unit for controlling the purge device so as to carry out a purge operation when it is determined by the monitoring device that the state of the fuel cell is a predetermined state.
US07989108B2
A non-aqueous electrolyte battery of the present invention includes a positive electrode, a negative electrode, and a non-aqueous electrolyte. The negative electrode includes a molded body made by compression molding a granulated material containing a negative electrode active material, a conductive agent, and a binder. The negative electrode active material includes a Si-containing material. Volume-based 90% particle size R (D90) of the negative electrode active material, volume-based 10% particle size Rz (D10) and 90% particle size Rz (D90) of the granulated material, and thickness T of the molded body satisfy the following relation formulae: (i) R (D90)
US07989103B2
A microporous separator film for electrochemical cells and a method of making such films is disclosed. The microporous separator film includes an intimate mixture of an electrically insulating matrix phase and a self-switching voltage activated conductive phase, wherein the voltage activated conductive phase provides a plurality of conductive paths from a first face of the microporous separator film to a second face of the microporous separator film. The method for making the composite microporous separator film includes the steps of forming an intimate mixture of at least an insulating matrix phase and a self-switching voltage activated phase, forming a film from the mixture, and generating pores within the film.
US07989094B2
A sheet-like pane bearing a low-maintenance coating on one surface and a low-emissivity coating on the opposite surface, wherein one of the low-maintenance coating and the low-emissivity coating has a single surface reflectivity of less than 3 times, and more than one-third, that of the other coating.
US07989091B2
Silanes comprising phenothiazine S-oxide or phenothiazine S,S-dioxide groups, organic light-emitting diodes comprising the inventive silanes, a light-emitting layer comprising at least one inventive silane and at least one triplet emitter, a process for preparing the inventive silanes and the use of the inventive silanes in organic light-emitting diodes, preferably as matrix materials and/or blocker materials for triplet emitters.
US07989086B2
A multi-layer seal arrangement includes a dissolution barrier between a braze alloy and a ceramic component. The inventive seal is useful for joining a ceramic component to another ceramic component or a metal component, for example. In one example, the braze comprises a gold alloy and the dissolution barrier comprises a layer of alumina on the order of 2-3 microns thick. A titanium wetting layer is provided between the alumina layer and the alloy. A metallization layer provided between the dissolution barrier and the ceramic component in one example comprises a layer of gold between two thin layers of titanium. In one particular example, a platinum mesh is included with the gold of the braze alloy to control braze flow during the brazing operation.
US07989080B2
A method and apparatus suitable for forming hermetic electrical feedthroughs in a ceramic sheet having a thickness of ≦40 mils. More particularly, the method yields an apparatus including a hermetic electrical feedthrough which is both biocompatible and electrochemically stable and suitable for implantation in a patient's body. The method involves: (a) providing an unfired, ceramic sheet having a thickness of ≦40 mils and preferably comprising ≧99% aluminum oxide; (b) forming multiple blind holes in said sheet; (c) inserting solid wires, preferably of platinum, in said holes; (d) firing the assembly of sheet and wires to a temperature sufficient to sinter the sheet material but insufficient to melt the wires; and (e) removing sufficient material from the sheet lower surface so that the lower ends of said wires are flush with the finished sheet lower surface.
US07989077B2
A coated steel product comprises a metallic strip material which has a coating comprising an electrically insulating layer doped with sodium. The thermal expansion coefficient of said metallic strip material is less than 12×10−6 K−1 in the temperature range 0-600° C. Said product may be coated with an electrically conducting layer of molybdenum. The coated steel product is useful as a substrate for flexible Cu(In,Ga)Se2 (CIGS) solar cells.
US07989072B2
A transparent conductive oxide (TCO) based film is formed on a substrate. The film may be formed by sputter-depositing, so as to include both a primary dopant (e.g., Al) and a co-dopant (e.g., Ag). The benefit of using the co-dopant in depositing the TCO inclusive film may be two-fold: (a) it may prevent or reduce self-compensation of the primary dopant by a more proper positioning of the Fermi level, and/or (b) it may promote declustering of the primary dopant, thereby freeing up space in the metal sublattice and permitting more primary dopant to create electrically active centers so as to improve conductivity of the film. Accordingly, the use of the co-dopant permits the primary dopant to be more effective in enhancing conductivity of the TCO inclusive film, without significantly sacrificing visible transmission characteristics. An example TCO in certain embodiments is ZnAlOx:Ag.
US07989071B2
The invention relates to the improvement of organic electronic devices, especially organic electroluminescence devices, to which end inclusion compounds are used, especially as charge injection materials and/or charge transporting materials.
US07989061B2
A polylactic acid monofilament includes a linear polylactic acid with a relative viscosity ηrel of in the range of 2.7 to 4.5, prepared from lactic acid monomers wherein at least 95 mol % of the lactic acid is an L-isomer, and wherein the resin contains 0 to 30 ppm of Sn and 0 to 0.5% by weight of residual monomer.
US07989059B2
A cutting tool insert, particularly useful for machining of cast iron, comprising a body of a hard alloy of cemented carbide, cermet, ceramics, cubic boron nitride based material or high speed steel a hard and wear resistant coating; and at least (Al,Cr)2O3 layer applied to said body is disclosed. Methods of making a cutting tool insert are also disclosed. In addition, methods for machining of cast iron using the cutting tool inserts are disclosed.
US07989054B2
The invention relates to a method for digitally printing a polymer-coated paper or board (1), to a paper or board suitable for the method and to the production of a product package equipped with digital prints. During digital printing, printing ink particles are applied in an electric field to the printing surface formed of a polymer coating at locations corresponding to the print, and the printing ink is adhered to the printing surface by fusion with the aid of infrared radiation. In accordance with the invention, the paper or board (2) to be printed is equipped with an inner coating layer (3) containing electrically chargeable ethene acrylate copolymer, such as ethene methyl acrylate copolymer (EMA), and with a polyolefin-based outer shield layer (4) on top of this, which contains e.g. low-density polyethene (LDPE) and provides mechanical strength, forming the printing surface receiving the printing ink.
US07989049B2
The present invention relates generally to a composite plate produced by an alternating stack of (n+1) flexible graphite foils and (n) perforated metal reinforcing foils with spurs (where n≧2). The thicknesses of the flexible graphite foils used are preferably such that any 2 mm slice of thickness of the composite plate comprises at least 3 layers of flexible graphite, and has a graphite density per unit area of at least 2.34 kg/m2. For each perforated metal reinforcing foil, the spurs present on the foil generally have a height in relation to the surface of that foil that does not exceed about 1.3 times the thickness of the thinnest of the flexible graphite layers to which it is attached. A composite plate of the present invention enables the manufacture of gaskets that resist temperatures up to 550° C. under continuous service.
US07989044B2
Means for installation of panels, the panels comprising a core, a decorative upper surface and edges provided with joining means for positioning the panels towards one another. Predetermined portions of the edges are provided with an encapsulated agent which is made present on the edges of the surface elements before assembly and which encapsulation is ruptured by means of assembly making the agent available to the core. The surface elements are hereby joined to one another by use of the joining means wherein a unit of a plurality of surface elements is formed.
US07989022B2
A method of processing a substrate includes physically contacting an exposed conductive electrode of an electrostatic carrier with a conductor to electrostatically bond a substrate to the electrostatic carrier. The conductor is removed from physically contacting the exposed conductive electrode. Dielectric material is applied over the conductive electrode. The substrate is treated while it is electrostatically bonded to the electrostatic carrier. In one embodiment, a conductor is forced through dielectric material that is received over a conductive electrode of an electrostatic carrier to physically contact the conductor with the conductive electrode to electrostatically bond a substrate to the electrostatic carrier. After removing the conductor from the dielectric material, the substrate is treated while it is electrostatically bonded to the electrostatic carrier. Electrostatic carriers for retaining substrates for processing, and such assemblies, are also disclosed.
US07989006B2
Annatto extract composition (AEC), including cis and trans geranyl geraniols (GG) and tocopherol-free C-5 unsubstituted tocotrienols (T3), increases the de novo synthesis of intermediate isoprenoid and distal protein products, including endogenous coenzyme Q10 (CoQ10), dolichols (DL) and all subsequent GG-prenylated and DL-glycosylated proteins, including GG-porphyrinated hemes. This intermediate and distal product replenishment by AEC reverses maladies of myotoxicity (of both drug and non-drug origins), including maladies that affect the muscle, kidney, eye, GI tract and skin, nerve, blood, and CoQ10-related syndromes of energetics and LDL protection. AEC anabolically increases the endogenous de novo CoQ10 synthesis via GG elongation/prenylation of side-chain and conversely CoQ10 catabolically increases the endogenous de novo GG synthesis via beta-oxidation of CoQ10. Also, such AEC decreases de novo synthesis and increases disposal of triglycerides (TG) in humans via PPAR activation and SREBP deactivation. Such drop in TG by AEC reverses maladies of insulin resistance (IR) and metabolic syndrome (MS), prediabetes, diabetes and diabetes-related cardiovascular diseases (CVD). GG activates PPAR and down regulates SREBP transcription factors. This AEC, containing GG, inhibits cancer growth whether or not GG involvement in protein prenylation is required.
US07989002B2
Gel-based lipstick compositions are disclosed comprising an ester terminated poly(ester-amide) (ETPEA) polymeric gellant, a first wax component having a melting point above the sol-gel transition temperature of the ETPEA gellant, a second wax compositions having a melting point equal to of below the sol-gel transition temperature of the ETPEA gellant, optionally a silicone T-resin co-gellant, and one or more oils capable of forming a gel with the ETPEA gellant. The gel compositions are solid or semi-solid at room temperature and are capable of being molded into self-supporting sticks. The disclosed gels provide high gloss films when applied to the lips and/or provide a rheology characterized by a high viscosity over repeated shear cycles.
US07988997B2
A dosage form which is, in particular, sheet-like and rapidly disintegrating or soluble in an aqueous environment for rapid release of active ingredients in the oral cavity, in body orifices or in body cavities, where the dosage form comprises a matrix which comprises one or more water-soluble polymers as base substances, and comprises at least one active ingredient, is characterized in that the dosage form is provided with spaces or cavities which are present in the polymeric matrix and whose contents differ in terms of the state of aggregation from the matrix.
US07988989B2
A novel nutritional product and methods for the manufacture and administration of the same are disclosed for the feeding of equine foals and other animals. The nutritional product of the present invention is effective in supporting the growth and health of equine foals, and in supporting and stimulating its immune system as well. The nutritional product of the present invention consists of safe and natural ingredients rather than drugs, and is orally administrable. The ingredients of the nutritional product of the present invention when combined provide a synergistic efficacy which greatly exceeds the sum of the efficacies of the individual ingredients, making the nutritional product highly effective in promoting and enhancing the growth, nutritional uptake, and immune system of equine foals.
US07988982B2
A cosmetic composition has an association of at least three of the following substances with anti-free radical activity, selected from: 1) ebselen; or idebenone; or an association of the two; and 2) at least one substance with anti-free radical activity, or at least two substances with anti-free radical activity for obtaining said association of at least three substances with anti-free radical activity, said substance(s) being selected from: a) a substance of chemical formula (I) below: in which: R=a linear or branched, saturated or unsaturated C1-C16 hydrocarbon chain; and R1, R2 and R3 are identical or different and are a hydrogen atom or a methyl or methoxy radical, and its esters; b) an extract of Edelweiss; c) an extract of Emblica; and d) N-acetylcysteine. The anti-free radical activity is greatly improved.
US07988976B1
A method for enhancing antioxidant components of Gracilaria tenuistipitata extract is proposed. The method involves providing an extraction environment of 40° C., and performing cyclic grinding to a Gracilaria tenuistipitata solution with an ultrasonic disrupter outputting a vibrating frequency between 20 KHz and 45 KHz for 60 to 120 minutes, so as to stabilize chemical properties of the Gracilaria tenuistipitata solution and obtain a Gracilaria tenuistipitata extract having more activated protein and phycoerythrin as compared with an extract obtained through the prior art, thereby improving the Gracilaria tenuistipitata extract in antioxidative ability.
US07988975B2
The invention involves a synthetic peptide derived from HIV-1 virus gp41 having sequence where X615 is F or G, a method of preparing the synthetic peptide, a composition and a kit containing the synthetic peptide, and use of the synthetic peptide in immunoassays for the detection of infections caused by HIV-1 viruses.
US07988971B2
The present invention relates to monoclonal antibodies that bind or neutralize Hendra or Nipah virus. The invention provides such antibodies, fragments of such antibodies retaining Hendra or Nipah virus-binding ability, fully human antibodies retaining Hendra or Nipah virus-binding ability, and pharmaceutical compositions including such antibodies. The invention further provides for isolated nucleic acids encoding the antibodies of the invention and host cells transformed therewith. Additionally, the invention provides for prophylactic, therapeutic, and diagnostic methods employing the antibodies and nucleic acids of the invention.
US07988959B2
The present invention relates to in vitro cultured skin tissue, and in particular to cultured skin tissue comprising exogenous genes encoding angiogenic growth factors. In some embodiments, the keratinocytes express exogenous angiopoietin-1, HIF-1α, or a member of the VEGF family, preferably VEGF-A. In particularly preferred embodiments, the keratinocytes are incorporated into cultured skin tissue.
US07988956B2
Poly(ethylene glycol) carbamate derivatives useful as water-soluble pro-drugs are disclosed. These degradable poly(ethylene glycol) carbamate derivatives also have potential applications in controlled hydrolytic degradation of hydrogels. In such degradable hydrogels, drugs may be either trapped in the gel and released by diffusion as the gel degrades, or they may be covalently bound through hydrolyzable carbamate linkages. Hydrolysis of these carbamate linkages releases the amine drug at a controllable rate as the gel degrades.
US07988953B2
The invention provides a conjugate comprising a hyperbranched polymer covalently bonded to at least three UV absorbing chromophores having an UV absorption maximum λmax≧270 nm.The conjugate is an effective and safe sunscreen which can advantageously be used in cosmetic compositions.
US07988951B2
Transimmunization methods incorporating skin immunologic challenges are described for either selectively suppressing the immune response of recipients of transplanted tissue or cells or monitoring induced anti-cancer immunity. In one embodiment, skin from the transplant donor is allografted to the transplant recipient to induce an immunological response to the transplanted skin. A quantity of blood is taken from the recipient and treated to render the T cells in the blood apoptotic and to induce differentiation of blood monocytes into dendritic cells. The treated blood is incubated and administered to the recipient to induce formation of suppressor T cell clones which reduce the number of T cells attacking the transplanted tissue or organ. This tolerogenic approach can be complemented by also feeding the immature dendritic cells apoptotic or necrotic cells from the organ donor. In a second embodiment, dendritic cells loaded with tumor antigens are injected intradermally to monitor the anti-cancer immunity induced by Transimmunization.
US07988948B2
A method for generating hydrogen and/or syngas in a production facility where little or no export steam is produced. Most or all of the steam produced from the waste heat from the process is used in the steam-hydrocarbon reformer. Reformed gas is passed to a pressure swing adsorption system for H2 purification. In the method, CO2 is removed from the pressure swing adsorber residual gas prior to recycling the residual gas to the reformer for use as feed and as fuel. Plant efficiencies using the method and prior art-type methods are compared.
US07988943B2
For conversion of sulphur-containing compounds present in a gas comprising H2S and sulphur-containing compounds into additional H2S, a step A of contacting the gas with a reducing gas and a hydrogenation catalyst comprising cobalt, molybdenum and an alumina support, the sum of cobalt and molybdenum, in the oxide form, being 3% to 25% by weight, the surface area of alumina being more than 140 m2/g. In step B, effluent gas from step A is contacted with a catalyst comprising at least one alkaline-earth element, at least one dopant being iron, cobalt or molybdenum and at least one compound of titanium oxide and/or zirconium oxide, the catalyst for step B) being either in bulk or supported.
US07988938B2
A heap leach process for the recovery of nickel and cobalt from a lateritic ore, said process including the steps of leaching and/or agglomerating the ore with a lixiviant that includes ferrous ions, wherein the lixiviant is able to liberate cobalt from the cobalt containing minerals within the ore in preference to nickel, to produce a cobalt rich pregnant leach solution relatively free of nickel.
US07988920B2
A method and apparatus for aerating a region exposed to a gaseous/vaporous sterilant. A catalytic destroyer and a reactive chemical unit are used to reduce the concentration of the gaseous/vaporous sterilant within the region. The reactive chemical unit includes a chemistry that is chemically reactive with the gaseous/vaporous sterilant. In one embodiment, the gaseous/vaporous sterilant is vaporized hydrogen peroxide and the chemistry of the reactive chemical unit includes thiosulfate and iodide.
US07988915B2
Disclosed is a microfluidic device including a microfluidic structure formed in a platform in which various examinations, such as an immune serum examination, can be automatically performed using the biomolecule microarray chip. The biomolecule microarray chip-type microfluidic device using a biomolecule microarray chip comprises: a platform which is rotatable; a microfluidic structure disposed in the platform, comprising: a plurality of chambers; a plurality of channels connecting the chambers each other; and a plurality of valves controlling flow of fluids through the channels, wherein the microfluidic structure controls flow of a fluid sample using rotation of the platform and the valves; and a biomolecule microarray chip mounted in the platform such that biomolecule capture probes bound to the biomolecule microarray chip contact the fluid sample in the microfluidic structure.
US07988906B2
A process for the production of moldings via a layer-by-layer process by selectively melting regions of one or more powder layers that contain cyclic oligomers and have a median grain diameter determined by laser diffraction of between 25 and 150 μm via input of electromagnetic energy, and permitting the layers to solidify to provide a solid mass, where selectivity is achieved by applying one or more aids amongst the group of susceptors, inhibitors, absorbers, masks, and focusing of a laser beam.
US07988896B2
A method of preparing a carbon nanotube/polymer composite material is provided. The method includes (a) providing a carbon nanotube-based film and a pre-polymer solution; (b) placing the carbon nanotube-based film at a bottom of a container, and pouring the pre-polymer solution in the container; and (c) polymerizing the pre-polymer solution and simultaneously integrating the pre-polymer solution with the carbon nanotube-based film. As such, a carbon nanotube/polymer composite material, including the polymer-impregnated nanotube layer and an upper polymer layer, is obtained. A multi-layer composite can be produced by essentially repeating this process, using the upper polymer layer as the base layer for the formation of the next layer set thereon.
US07988895B2
A microporous polyethylene membrane having well-balanced permeability, mechanical properties, heat shrinkage resistance, compression resistance, electrolytic solution absorbability, shutdown properties and meltdown properties, with an average pore diameter changing in a thickness direction is produced by melt-blending a polyethylene resin and a membrane-forming solvent to prepare a solution A having a resin concentration of 25 to 50% by mass and a solution B having a resin concentration of 10 to 30% by mass, the resin concentration in the solution A being higher than that in the solution B, (a) simultaneously extruding the resin solutions A and B through a die, cooling the resultant extrudate to provide a gel-like sheet in which the resin solutions A and B are laminated, and removing the membrane-forming solvent from the gel-like sheet, or (b) extruding the resin solutions A and B through separate dies, removing the membrane-forming solvent from the resultant gel-like sheets A and B to form microporous polyethylene membranes A and B, and alternately laminating the microporous polyethylene membranes A and B, while easily controlling the average pore diameter distribution in the microporous polyethylene membrane in a thickness direction.
US07988891B2
A method of improving the water permeability and/or cleaning a porous polymeric microfiltration or ultrafiltration membrane, preferably a hydrophobic/hydrophilic blended membrane, eg P VdF/PVP comprising the step of contacting the porous polymeric membrane with a source of monopersulfate, preferably an aqueous solution of 2KHSO5.KHSO4.K2SO4.
US07988885B2
The present invention is directed to electrochromic electrolyte polymer blends. These blends comprise an amorphous polymer and an electrochromophore component. The electrochromophore component comprises a polyalkylene polymer copolymerized with an electrochromic moiety. The blends can be used to make elastomeric films and coatings that can be used in laminates, which can be used to form manufactured articles such as architectural and vehicular glazing, eyewear, displays and signage.
US07988884B2
A novel manufacturing process is described for producing hindered phenolic alkyl esters, which may be useful as antioxidants. This process simplifies catalyst neutralization and removal during the preparation of hindered phenolic esters. Compositions that comprise the hindered phenolic esters produced according to these methods are also described.
US07988875B2
A method and apparatus is provided for controlling the etch profile of a multilayer layer stack by depositing a first and second material layer with differential etch rates in the same or different processing chamber. In one embodiment of the invention, a process for etching substrate material is provided including depositing a first silicon-containing material layer having a first etch rate on the substrate surface from a nitrogen-containing precursor at a first flow rate and a silicon-containing precursor, depositing a second silicon-containing material layer having a second etch rate different than the first etch rate on the first silicon-containing material layer from the nitrogen-containing precursor at a second flow rate different than the first flow rate and the silicon-containing precursor, etching the first silicon-containing material layer and the second silicon-containing material layer, and forming a taper etch profile in the first silicon-containing material layer and the second silicon-containing material layer.
US07988869B2
A reactor for treating with pressurized water a material in a fluid reaction medium. It comprises a body (2) delimiting a reaction area (10), an inlet (48) for the material to be treated in the reaction area (10), a point (46) for introducing an oxidant into the reaction area (10), at least one outlet for the treated material outside the reaction area (10), the material to be treated follows a path defined in the reaction area between its inlet and its outlet. The point (46) for introducing the oxidant in the reaction area (10) is located downstream from the inlet (48) for the material and is spaced apart from the latter by a certain distance so as to define an anoxic area (20) comprised between the inlet for the material to be treated and the point for introducing the oxidant, an area in which the fluid medium is in anoxia.
US07988858B2
The present invention relates to a method for generating at least one polydentate metal chelating affinity ligand, which method comprises the steps of (a) providing at least one scaffold defined by the general formula (I): H2N—(X1)n—S—S—(X2)m—CH2—NH2 wherein X1 and X2 irrespective of each other are carbon atoms or heteroatoms, and n and m irrespective of each other are integers of 1 to 5; (b) providing at least one polydentate metal chelating affinity ligand arm, optionally in a form wherein the metal chelating functionalities of at least one arm are protected, on each scaffold by derivatisation of the nucleophilic NH2 groups of the scaffold; (c) reducing the disulfide bond of the derivatised scaffold; and, if required (d) deprotecting the functionalities of the ligand arm(s) provided in step (b). In the most preferred embodiment, the reduction of the disulfide bond and the deprotection step is performed essentially simultaneously.
US07988857B2
A method for treating mixed wastewater from pharmaceutical chemical industry parks including introducing mixed wastewater into a regulation tank for regulation of water flow and water quality, and then into a hydrolysis tank having a hanged filler and employing upflow water distribution, into an anaerobic tank employing upflow water distribution, into a moving bed biofilm reactor having a suspended filler and an aeration device at the bottom thereof, into a biological aerated filter including a ceramic filler, and finally treating using coagulating precipitation process. The final effluent has less than 100 mg/L COD.
US07988855B2
A cartridge apparatus for water treatment includes a header having a permeate cavity, a plurality of support elements spaced apart from the header, and a plurality of subgroups of hollow fiber membranes, the membranes in each subgroup having first ends potted in the header, and second ends potted in a respective one of the plurality of support elements.
US07988848B2
This invention relates to a process for activating a hydroprocessing catalyst and the use of activated catalyst for hydroprocessing. More particularly, hydroprocessing catalysts are activated in the presence of carbon monoxide. The catalysts that have been activated by CO treatment have improved activity.
US07988846B1
A method for modifying asphalt comprises blowing an oxygen-containing gas through a base asphalt at a high gas flow rate while simultaneously agitating the base asphalt at a high shear rate and at an elevated temperature for a period of time that is effective to substantially improve at least two paving properties of the base asphalt. In preferred embodiments, modified asphalts are produced having both substantially improved rutting resistance and substantially improved fatigue resistance as compared to the base asphalt.
US07988835B2
There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber (1) provided with a silicon sputter target (e.g., target 30), or the hydrogen gas and the silane-containing gas are supplied into the chamber (1) without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/Hβ) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity Hβ of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).
US07988829B2
A papermaking machine for making paper includes a forming section, a press section, and a drying section. The paper web is pressed between two press members while enclosed between a press felt and a transfer belt having non-uniformly distributed microscopic depressions in its surface, the web following the transfer belt from the press to a transfer point at which the web is transferred via a suction transfer device onto a structuring fabric, the web then being dried on a drying cylinder. The transfer point is spaced a distance D from the press nip selected based on machine speed, a basis weight of the web, and the surface characteristics of the transfer belt, such that within the distance D a thin water film between the web and the transfer belt at least partially dissipates to allow the web to be separated from the transfer belt.
US07988827B2
An aqueous emulsion, including (a) a dialkylamide; and (b) a non-ionic surfactant, is provided. An emulsion, including (a) about 30% b.w. to about 70% b.w. of a dialkylamide; (b) about 5% b.w. to about 25% b.w. of a non-ionic surfactant; and (c) 0% b.w. to about 15% b.w. of an anionic surfactant, where the amounts, with water added and optional auxiliary agents, add to 100% b.w., is also provided. A method for reducing pitch in the production of paper includes adding the emulsion to pulp.
US07988803B2
A device for joining substrates (11) is provided inside a clean booth (12). a single axis robot (46) and a five axis robot (47) convey a wafer (25) and a glass substrate (33). A transcribing station (91) obtains a transcribing film (112) on which adhesive is applied from a film supplying section (113), and presses the transcribing film (112) to the glass substrate (33) so as to transcribe the adhesive to the glass substrate (33). A peeling station (92) peels the transcribing film (112) from the glass substrate (33). A joining station (57) positions the wafer (25) and the glass substrate (33), adjusts parallelism of joining surfaces of the wafer (25) and the glass substrate (33), and joins these substrates together. Since the handling and the joining of the wafer (25), the glass substrate (33) and the transcribing film (112) are performed in the clean booth, it is prevented that a yield ratio of the product decreases because of the adhesion of foreign matters.
US07988796B2
A method of manufacturing a sheave member for a belt-type continuously variable transmission includes a forming step wherein an intermediate product having a sheave surface is formed by forging a steel material; a carburization step wherein the intermediate product is heated in a carburization gas; a gradual cooling step wherein the cooling speed is equal to or less than 20° C./sec, at least until the temperature of the intermediate product has passed through the transformation point; a high-frequency electrical heating step wherein a selected portion(s) of the intermediate product is heated; a water quenching step wherein the selected portion is quenched by contact with water; and a finishing step wherein a grinding process is applied to the intermediate product to attain the final shape. In the cooling step, preferably, the intermediate product is contacted with a cooling gas at a pressure lower than atmospheric pressure.
US07988789B2
A system and method for low temperature hydration of food soils allows for hydration of food soils between washing cycles in a dishwasher. A user selects a hydration button to actuate a hydration cycle between dishwashing cycles. During the hydration cycle, a plurality of atomizers are periodically actuated in accordance with a desired amount of hydration selected by the user. Water is supplied from a dedicated water supply line to the atomizers, preferably without being heated, and is distributed throughout a dishwasher chamber utilizing spray nozzles or fans associated with the atomizers. The hydration cycle ends when deactivated, or when a dishwashing cycle is initiated.