知搜-全球专利检索

  1. Login
  2. Sign Up
Invention Grant
US07989871B2 Nonvolatile semiconductor memory device having insulating films that include multiple layers formed by insulating materials having d-orbital metal element and insulating materials without d-orbital metal element 有权
具有绝缘膜的非易失性半导体存储器件包括由具有d轨道金属元素的绝缘材料和不具有d轨道金属元素的绝缘材料形成的多个层

  • Patent Title: Nonvolatile semiconductor memory device having insulating films that include multiple layers formed by insulating materials having d-orbital metal element and insulating materials without d-orbital metal element
  • Patent Title (中): 具有绝缘膜的非易失性半导体存储器件包括由具有d轨道金属元素的绝缘材料和不具有d轨道金属元素的绝缘材料形成的多个层
  • Application No.: US11680945
    Application Date: 2007-03-01
  • Publication No.: US07989871B2
    Publication Date: 2011-08-02
  • Inventor: Naoki Yasuda
  • Applicant: Naoki Yasuda
  • Applicant Address: JP Tokyo
  • Assignee: Kabushiki Kaisha Toshiba
  • Current Assignee: Kabushiki Kaisha Toshiba
  • Current Assignee Address: JP Tokyo
  • Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
  • Priority: JP2006-071327 20060315
  • Main IPC: H01L29/788
  • IPC: H01L29/788
Nonvolatile semiconductor memory device having insulating films that include multiple layers formed by insulating materials having d-orbital metal element and insulating materials without d-orbital metal element
Abstract:
A nonvolatile semiconductor memory device includes a first insulating film on a channel, a floating gate electrode on the first insulating film, a second insulating film on the floating gate electrode, and a control gate electrode on the second insulating film. Each of the first and second insulating films comprises at least two layers, one layer directly in contact with the floating gate electrode is formed by an insulating material (A) including a metal element having a d orbital, and the other at least one layer is formed by an insulating material (B) chiefly including one of a metal element without the d orbital, and a semiconductor element.
Abstract(Chinese):

非易失性半导体存储器件包括沟道上的第一绝缘膜，第一绝缘膜上的浮栅，浮栅上的第二绝缘膜和第二绝缘膜上的控制栅电极。 第一绝缘膜和第二绝缘膜中的每一个包括至少两个层，与浮动栅极直接接触的一个层由包括具有轨道的金属元素的绝缘材料（A）形成，并且形成另一个层 通过主要包括没有d轨道的金属元素之一的绝缘材料（B）和半导体元件。

Public/Granted literature
Information query
Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/78 .....由绝缘栅产生场效应的
H01L29/788 ......带有浮栅的
Patent Agency Ranking
0/0