Invention Grant
- Patent Title: Diode structure and memory device including the same
- Patent Title (中): 二极管结构和存储器件包括相同
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Application No.: US12076311Application Date: 2008-03-17
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Publication No.: US07989791B2Publication Date: 2011-08-02
- Inventor: Bo-soo Kang , Stefanovich Genrikh , Young-soo Park , Myoung-jae Lee , Seung-eon Ahn , Chang-bum Lee
- Applicant: Bo-soo Kang , Stefanovich Genrikh , Young-soo Park , Myoung-jae Lee , Seung-eon Ahn , Chang-bum Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0082989 20070817
- Main IPC: H01L29/12
- IPC: H01L29/12
Abstract:
Provided are a diode structure and a memory device including the same. The diode structure includes: a first electrode; a p-type Cu oxide layer formed on the first electrode; an n-type InZn oxide layer formed on the p-type Cu oxide layer; and a second electrode formed on the n-type InZn oxide.
Public/Granted literature
- US20090045429A1 Diode structure and memory device including the same Public/Granted day:2009-02-19
Information query
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