Invention Grant
- Patent Title: Surface emitting laser array
- Patent Title (中): 表面发射激光阵列
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Application No.: US12599991Application Date: 2009-02-24
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Publication No.: US07991035B2Publication Date: 2011-08-02
- Inventor: Mitsuhiro Ikuta
- Applicant: Mitsuhiro Ikuta
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2008-054867 20080305
- International Application: PCT/JP2009/053789 WO 20090224
- International Announcement: WO2009/110394 WO 20090911
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
Provided is a surface emitting laser array using a photonic crystal, which allows an active layer to be shared without disconnecting the active layer between the individual surface emitting lasers adjacent to each other, and enables high-density arraying easily. The surface emitting laser array includes: at least two surface emitting lasers formed on a substrate, each having a laminated structure of multiple semiconductor layers including a semiconductor multilayer mirror, an active layer, and a photonic crystal having a refractive index profile in an in-plane direction, the photonic crystal and the semiconductor multilayer mirror in the laminated structure forming a waveguide for guiding light in a resonance mode; and a region without the photonic crystal provided between adjacent surface emitting lasers in the surface emitting laser array, in which the surface emitting lasers have the same semiconductor multilayer mirror and the same active layer.
Public/Granted literature
- US20100220763A1 SURFACE EMITTING LASER ARRAY Public/Granted day:2010-09-02
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