Invention Grant
US07989227B2 Method of manufacturing semiconductor chip and semiconductor module
有权
制造半导体芯片和半导体模块的方法
- Patent Title: Method of manufacturing semiconductor chip and semiconductor module
- Patent Title (中): 制造半导体芯片和半导体模块的方法
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Application No.: US12479248Application Date: 2009-06-05
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Publication No.: US07989227B2Publication Date: 2011-08-02
- Inventor: Kiyoshi Arai , Majumdar Gourab
- Applicant: Kiyoshi Arai , Majumdar Gourab
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-243438 20080923
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
An FOM (figure of merit) enabling evaluation from a cost aspect, as well as evaluation of electrical performance, is newly proposed to provide a method of manufacturing based on the FOM a semiconductor chip intended for a lower cost production in addition to satisfying electrical performance. An FOMC of a semiconductor chip is defined as the product of a term represented by electrical performance of a substrate S and a term represented by a semiconductor chip cost CC; the FOMC of each of the semiconductor chips on substrates SS, SC of different type is determined by calculation of the product thereof. Based on the magnitudes of the calculation results, a desired substrate is selected from the substrates SS, SC and then a semiconductor chip is fabricated by forming a semiconductor element on the desired substrate selected.
Public/Granted literature
- US20100075444A1 METHOD OF MANUFACTURING SEMICONDUCTOR CHIP AND SEMICONDUCTOR MODULE Public/Granted day:2010-03-25
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