Invention Grant
- Patent Title: Memory device having improved programming operation
- Patent Title (中): 存储器件具有改进的编程操作
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Application No.: US12402158Application Date: 2009-03-11
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Publication No.: US07990772B2Publication Date: 2011-08-02
- Inventor: Prashant S. Damle , Krishna Parat , Alessandro Torsi , Carlo Musilli , Kalpana Vakati , Akira Goda
- Applicant: Prashant S. Damle , Krishna Parat , Alessandro Torsi , Carlo Musilli , Kalpana Vakati , Akira Goda
- Applicant Address: US ID Boise
- Assignee: Micron Technology Inc.
- Current Assignee: Micron Technology Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
Some embodiments include methods and devices having a module and memory cells. The module is configured to reduce the amount of electrons in the sources and drains of the memory cells during a programming operation.
Public/Granted literature
- US20100232234A1 MEMORY DEVICE HAVING IMPROVED PROGRAMMING OPERATION Public/Granted day:2010-09-16
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