Invention Grant
US07989306B2 Method of forming alternating regions of Si and SiGe or SiGeC on a buried oxide layer on a substrate
有权
在衬底上的掩埋氧化物层上形成Si和SiGe或SiGeC的交替区域的方法
- Patent Title: Method of forming alternating regions of Si and SiGe or SiGeC on a buried oxide layer on a substrate
- Patent Title (中): 在衬底上的掩埋氧化物层上形成Si和SiGe或SiGeC的交替区域的方法
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Application No.: US11770908Application Date: 2007-06-29
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Publication No.: US07989306B2Publication Date: 2011-08-02
- Inventor: Xuefeng Liu , Robert M. Rassel , Steven H. Voldman
- Applicant: Xuefeng Liu , Robert M. Rassel , Steven H. Voldman
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Anthony Canale
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/322 ; H01L21/20 ; H01L21/36 ; H01L23/58 ; H01L21/02 ; H01L29/30
Abstract:
Semiconductor structures and methods of forming semiconductor structures, and more particularly to structures and methods of forming SiGe and/or SiGeC buried layers for SOI/SiGe devices. An integrated structure includes discontinuous, buried layers having alternating Si and SiGe or SiGeC regions. The structure further includes isolation structures at an interface between the Si and SiGe or SiGeC regions to reduce defects between the alternating regions. Devices are associated with the Si and SiGe or SiGeC regions.
Public/Granted literature
- US20090001414A1 STRUCTURES AND METHODS OF FORMING SIGE AND SIGEC BURIED LAYER FOR SOI/SIGE TECHNOLOGY Public/Granted day:2009-01-01
Information query
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