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公开(公告)号:CN102651352A
公开(公告)日:2012-08-29
申请号:CN201210034475.3
申请日:2012-02-15
Applicant: 富士通株式会社
IPC: H01L23/31 , H01L23/367 , H01L23/48 , H01L21/56 , H01L21/60
CPC classification number: H01L24/83 , H01L21/78 , H01L23/13 , H01L23/142 , H01L23/3121 , H01L23/367 , H01L23/3737 , H01L23/49822 , H01L23/66 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/92 , H01L2224/0345 , H01L2224/03452 , H01L2224/04026 , H01L2224/04042 , H01L2224/05554 , H01L2224/05558 , H01L2224/0558 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/06155 , H01L2224/06181 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29116 , H01L2224/29118 , H01L2224/2912 , H01L2224/29139 , H01L2224/29147 , H01L2224/2929 , H01L2224/29339 , H01L2224/29344 , H01L2224/32225 , H01L2224/3224 , H01L2224/32245 , H01L2224/33183 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/48091 , H01L2224/48227 , H01L2224/48599 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48666 , H01L2224/48699 , H01L2224/48724 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48766 , H01L2224/48799 , H01L2224/48824 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48866 , H01L2224/49175 , H01L2224/73265 , H01L2224/83191 , H01L2224/83192 , H01L2224/8384 , H01L2224/83851 , H01L2224/92247 , H01L2224/94 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01082 , H01L2924/01083 , H01L2924/10161 , H01L2924/10253 , H01L2924/1026 , H01L2924/1033 , H01L2924/10344 , H01L2924/1047 , H01L2924/12032 , H01L2924/12042 , H01L2924/13064 , H01L2924/142 , H01L2924/15153 , H01L2924/00012 , H01L2924/00014 , H01L2224/03 , H01L2924/00
Abstract: 本发明提供一种半导体装置、用于制造半导体装置的方法以及电子器件,所述半导体装置包括:包括第一电极的半导体器件;包括第二电极和凹部的衬底;和散热粘合材料,该散热粘合材料将半导体器件固定在凹部中,以将第一电极布置为靠近第二电极,其中第一电极耦接到第二电极,并且散热粘合材料覆盖半导体器件的底表面和侧表面的至少一部分。
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公开(公告)号:CN103681542B
公开(公告)日:2016-11-23
申请号:CN201310396680.9
申请日:2013-09-04
Applicant: 英飞凌科技股份有限公司
IPC: H01L23/367 , H01L23/31 , H01L21/50 , H01L21/56
CPC classification number: H01L23/13 , H01L23/142 , H01L23/36 , H01L23/492 , H01L23/49513 , H01L23/49562 , H01L24/05 , H01L24/13 , H01L24/19 , H01L24/20 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/80 , H01L24/83 , H01L24/85 , H01L24/92 , H01L2224/0401 , H01L2224/04026 , H01L2224/04042 , H01L2224/04105 , H01L2224/05556 , H01L2224/0556 , H01L2224/05568 , H01L2224/05611 , H01L2224/05618 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0566 , H01L2224/05664 , H01L2224/05666 , H01L2224/12105 , H01L2224/131 , H01L2224/2101 , H01L2224/2105 , H01L2224/211 , H01L2224/2745 , H01L2224/27462 , H01L2224/29006 , H01L2224/29016 , H01L2224/29023 , H01L2224/29026 , H01L2224/29109 , H01L2224/29111 , H01L2224/29118 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/2916 , H01L2224/29164 , H01L2224/29166 , H01L2224/3201 , H01L2224/32057 , H01L2224/32106 , H01L2224/32225 , H01L2224/32237 , H01L2224/32245 , H01L2224/32257 , H01L2224/45111 , H01L2224/45118 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/4516 , H01L2224/45164 , H01L2224/45166 , H01L2224/48091 , H01L2224/48611 , H01L2224/48618 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/4866 , H01L2224/48664 , H01L2224/48666 , H01L2224/48711 , H01L2224/48718 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/4876 , H01L2224/48764 , H01L2224/48766 , H01L2224/48811 , H01L2224/48818 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/4886 , H01L2224/48864 , H01L2224/48866 , H01L2224/73265 , H01L2224/73267 , H01L2224/80903 , H01L2224/821 , H01L2224/82101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83385 , H01L2224/83438 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/8346 , H01L2224/83464 , H01L2224/8382 , H01L2224/83902 , H01L2224/9202 , H01L2224/92247 , H01L2924/00014 , H01L2924/10253 , H01L2924/12042 , H01L2924/15153 , H01L2924/15747 , H01L2924/15787 , H01L2924/181 , H01L2924/00 , H01L2924/01015 , H01L2924/01079 , H01L2924/01047 , H01L2924/01029 , H01L2924/01028 , H01L2924/01082 , H01L2924/01051 , H01L2924/00012 , H01L2924/014 , H01L2224/05552
Abstract: 芯片封装和用于制作芯片封装的方法。提供一种芯片封装,所述芯片封装包括:包括至少一个腔体的载体;至少部分地设置在至少一个腔体内的芯片;设置在芯片的至少一个侧壁上的至少一个中间层;其中至少一个中间层被配置为将来自芯片的热量热传导到载体。
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公开(公告)号:CN104380460A
公开(公告)日:2015-02-25
申请号:CN201380030921.6
申请日:2013-07-05
Applicant: 先端光子公司
IPC: H01L23/13 , H01L21/60 , H01L23/31 , H01L23/498 , H01L21/56 , H01L25/03 , H01L25/065
CPC classification number: H01L24/17 , H01L21/561 , H01L23/13 , H01L23/3114 , H01L23/3121 , H01L23/3135 , H01L23/49805 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/03 , H01L25/0655 , H01L25/0657 , H01L2224/03334 , H01L2224/0401 , H01L2224/04042 , H01L2224/05552 , H01L2224/05644 , H01L2224/05647 , H01L2224/05669 , H01L2224/06155 , H01L2224/13144 , H01L2224/16105 , H01L2224/16108 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/1714 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45169 , H01L2224/48091 , H01L2224/48137 , H01L2224/48157 , H01L2224/48227 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/48496 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48666 , H01L2224/48669 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48766 , H01L2224/48769 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48866 , H01L2224/48869 , H01L2224/48997 , H01L2224/4911 , H01L2224/49175 , H01L2224/73207 , H01L2224/73265 , H01L2224/81193 , H01L2224/85395 , H01L2224/85439 , H01L2224/85444 , H01L2224/85447 , H01L2224/85455 , H01L2224/85464 , H01L2224/85466 , H01L2224/8592 , H01L2224/94 , H01L2224/97 , H01L2225/0651 , H01L2225/06513 , H01L2225/06551 , H01L2225/06562 , H01L2225/06575 , H01L2924/00014 , H01L2924/01015 , H01L2924/01047 , H01L2924/01079 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15159 , H01L2924/157 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2224/03 , H01L2224/85 , H01L2924/00 , H01L2224/48455 , H01L2924/00012 , H01L2224/4554
Abstract: 本发明提供一种能容易与主基板上的IC连接的、具备半导体元件(104)的基台(100)。本发明的一个实施方式的基台(100)包括基板(101)、电极(102)、(103)、半导体元件(104)、Au引线(105)和金凸起(106)、(107)。电极(102)、(103)、半导体元件(104)、Au引线(105)和金凸起(106)、(107)由树脂(108)在基板(101)上密封。在电极(103)上并且在Au引线(105)上利用球焊形成金凸起(107)后,对其利用划片加以切断而露出侧面。露出了的面作为基台(100)的侧面电极发挥作用。
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公开(公告)号:CN101636831A
公开(公告)日:2010-01-27
申请号:CN200880002933.7
申请日:2008-04-22
Applicant: 弗利普芯片国际有限公司
IPC: H01L21/60
CPC classification number: H01L24/05 , H01L23/3171 , H01L23/3192 , H01L24/02 , H01L24/03 , H01L24/13 , H01L2224/0235 , H01L2224/0239 , H01L2224/0345 , H01L2224/0346 , H01L2224/0401 , H01L2224/04042 , H01L2224/05022 , H01L2224/05073 , H01L2224/05124 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05541 , H01L2224/05548 , H01L2224/05554 , H01L2224/05555 , H01L2224/05567 , H01L2224/05572 , H01L2224/0558 , H01L2224/05644 , H01L2224/05647 , H01L2224/05666 , H01L2224/1148 , H01L2224/13006 , H01L2224/13007 , H01L2224/13021 , H01L2224/13022 , H01L2224/131 , H01L2224/45144 , H01L2224/45147 , H01L2224/48644 , H01L2224/48647 , H01L2224/48666 , H01L2224/48844 , H01L2224/48847 , H01L2224/48866 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/12044 , H01L2924/14 , H01L2924/3011 , H01L2924/351 , H01L2924/00014 , H01L2924/00015 , H01L2224/13099 , H01L2924/00
Abstract: 一种用于包括输入-输出(IO)上凸点结构的半导体封装的设备和方法被披露,其中涉及器件焊盘、凸点下金属焊盘(UBM)、聚合物、及钝化层。从器件焊盘的中央到其外边缘的最短距离与从UBM的中央到其外边缘的最短距离的比值从0.5∶1到0.95∶1。此外,从聚合物的中央到其外边缘的最短距离与从UBM的中央到其外边缘的最短距离的比值从0.35∶1到0.85∶1。此外,从钝化层的中央到其外边缘的最短距离与从UBM的中央到其外边缘的最短距离的比值从0.35∶1到0.80∶1。
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公开(公告)号:CN102867804B
公开(公告)日:2016-03-16
申请号:CN201210236310.4
申请日:2012-07-06
Applicant: 英飞凌科技股份有限公司
Inventor: 拉尔夫·奥特伦巴
IPC: H01L23/495 , H01L21/60
CPC classification number: H01L23/49562 , H01L23/3107 , H01L23/49513 , H01L23/49524 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/34 , H01L24/35 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/92 , H01L24/97 , H01L2224/04026 , H01L2224/04042 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/0603 , H01L2224/06181 , H01L2224/2745 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/32245 , H01L2224/33181 , H01L2224/35831 , H01L2224/37011 , H01L2224/37147 , H01L2224/3716 , H01L2224/4007 , H01L2224/40095 , H01L2224/40247 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48599 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48666 , H01L2224/48669 , H01L2224/48671 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48766 , H01L2224/48769 , H01L2224/48771 , H01L2224/48799 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48866 , H01L2224/48869 , H01L2224/48871 , H01L2224/73215 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/77272 , H01L2224/83191 , H01L2224/83192 , H01L2224/83385 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/8346 , H01L2224/83801 , H01L2224/8381 , H01L2224/8382 , H01L2224/83986 , H01L2224/84801 , H01L2224/92147 , H01L2224/92157 , H01L2224/92165 , H01L2224/92166 , H01L2224/92246 , H01L2224/92247 , H01L2224/94 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01047 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/1431 , H01L2924/1434 , H01L2924/1461 , H01L2924/181 , H01L2924/19105 , H01L2924/00012 , H01L2924/01023 , H01L2924/01028 , H01L2224/27 , H01L2924/0105 , H01L2924/01049 , H01L2924/01014 , H01L2224/83 , H01L2224/84 , H01L2224/85 , H01L2224/48227 , H01L2924/00 , H01L2924/01005
Abstract: 本发明公开了一种包括具有突出体的接触片的半导体器件及其制造方法。该半导体器件包括:具有晶片焊垫和第一引线的引线框、具有第一电极的半导体芯片、以及具有第一接触区和第二接触区的接触片。半导体芯片置于晶片焊垫之上。第一接触区置于第一引线之上,以及第二接触区置于半导体芯片的第一电极之上。多个突出体从各第一接触区和第二接触区延伸,并且每个突出体具有至少5μm的高度。
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公开(公告)号:CN102651352B
公开(公告)日:2014-11-19
申请号:CN201210034475.3
申请日:2012-02-15
Applicant: 富士通株式会社
IPC: H01L23/31 , H01L23/367 , H01L23/48 , H01L21/56 , H01L21/60
CPC classification number: H01L24/83 , H01L21/78 , H01L23/13 , H01L23/142 , H01L23/3121 , H01L23/367 , H01L23/3737 , H01L23/49822 , H01L23/66 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/92 , H01L2224/0345 , H01L2224/03452 , H01L2224/04026 , H01L2224/04042 , H01L2224/05554 , H01L2224/05558 , H01L2224/0558 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/06155 , H01L2224/06181 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29116 , H01L2224/29118 , H01L2224/2912 , H01L2224/29139 , H01L2224/29147 , H01L2224/2929 , H01L2224/29339 , H01L2224/29344 , H01L2224/32225 , H01L2224/3224 , H01L2224/32245 , H01L2224/33183 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/48091 , H01L2224/48227 , H01L2224/48599 , H01L2224/48624 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48666 , H01L2224/48699 , H01L2224/48724 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48766 , H01L2224/48799 , H01L2224/48824 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48866 , H01L2224/49175 , H01L2224/73265 , H01L2224/83191 , H01L2224/83192 , H01L2224/8384 , H01L2224/83851 , H01L2224/92247 , H01L2224/94 , H01L2924/01029 , H01L2924/0103 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01082 , H01L2924/01083 , H01L2924/10161 , H01L2924/10253 , H01L2924/1026 , H01L2924/1033 , H01L2924/10344 , H01L2924/1047 , H01L2924/12032 , H01L2924/12042 , H01L2924/13064 , H01L2924/142 , H01L2924/15153 , H01L2924/00012 , H01L2924/00014 , H01L2224/03 , H01L2924/00
Abstract: 本发明提供一种半导体装置、用于制造半导体装置的方法以及电子器件,所述半导体装置包括:包括第一电极的半导体器件;包括第二电极和凹部的衬底;和散热粘合材料,该散热粘合材料将半导体器件固定在凹部中,以将第一电极布置为靠近第二电极,其中第一电极耦接到第二电极,并且散热粘合材料覆盖半导体器件的底表面和侧表面的至少一部分。
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公开(公告)号:CN102903694A
公开(公告)日:2013-01-30
申请号:CN201210263016.2
申请日:2012-07-26
Applicant: 英飞凌科技股份有限公司
IPC: H01L23/495 , H01L21/60 , H01L29/40
CPC classification number: H01L24/73 , H01L23/3107 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/97 , H01L2224/02166 , H01L2224/04026 , H01L2224/04034 , H01L2224/04042 , H01L2224/05147 , H01L2224/05155 , H01L2224/05553 , H01L2224/05567 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/0603 , H01L2224/2732 , H01L2224/2745 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/2929 , H01L2224/29291 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/32014 , H01L2224/32145 , H01L2224/32245 , H01L2224/33181 , H01L2224/37147 , H01L2224/3716 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/48463 , H01L2224/4847 , H01L2224/48599 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/4866 , H01L2224/48664 , H01L2224/48666 , H01L2224/48669 , H01L2224/48671 , H01L2224/48699 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/4876 , H01L2224/48764 , H01L2224/48766 , H01L2224/48769 , H01L2224/48771 , H01L2224/48799 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/4886 , H01L2224/48864 , H01L2224/48866 , H01L2224/48869 , H01L2224/48871 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83191 , H01L2224/83801 , H01L2224/8381 , H01L2224/8382 , H01L2224/85439 , H01L2224/85447 , H01L2224/85455 , H01L2224/8546 , H01L2224/92246 , H01L2224/92247 , H01L2224/94 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01047 , H01L2924/01327 , H01L2924/014 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/181 , H01L2924/30107 , H01L2924/01028 , H01L2224/27 , H01L2924/0105 , H01L2924/01049 , H01L2924/01014 , H01L2924/00012 , H01L2924/01023 , H01L2224/85 , H01L2224/83 , H01L2224/84 , H01L2924/00 , H01L2224/05552 , H01L2924/01005
Abstract: 本发明涉及在一个面上具有两层金属层的功率半导体芯片。该半导体芯片包括具有多个有源晶体管元件的功率晶体管电路。第一负载电极和控制电极布置在半导体芯片的第一面上,其中,第一负载电极包括第一金属层。第二负载电极布置在半导体芯片的第二面上。第二金属层布置在第一金属层上方,其中第二金属层与功率晶体管电路电绝缘,第二金属层布置在功率晶体管电路的包括多个有源晶体管元件中的至少一个的区域的上方。
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公开(公告)号:CN104380460B
公开(公告)日:2017-07-28
申请号:CN201380030921.6
申请日:2013-07-05
Applicant: 先端光子公司
IPC: H01L23/13 , H01L21/60 , H01L23/31 , H01L23/498 , H01L21/56 , H01L25/03 , H01L25/065
CPC classification number: H01L24/17 , H01L21/561 , H01L23/13 , H01L23/3114 , H01L23/3121 , H01L23/3135 , H01L23/49805 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/03 , H01L25/0655 , H01L25/0657 , H01L2224/03334 , H01L2224/0401 , H01L2224/04042 , H01L2224/05552 , H01L2224/05644 , H01L2224/05647 , H01L2224/05669 , H01L2224/06155 , H01L2224/13144 , H01L2224/16105 , H01L2224/16108 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/1714 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/45169 , H01L2224/48091 , H01L2224/48137 , H01L2224/48157 , H01L2224/48227 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/48496 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48666 , H01L2224/48669 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/48764 , H01L2224/48766 , H01L2224/48769 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/48866 , H01L2224/48869 , H01L2224/48997 , H01L2224/4911 , H01L2224/49175 , H01L2224/73207 , H01L2224/73265 , H01L2224/81193 , H01L2224/85395 , H01L2224/85439 , H01L2224/85444 , H01L2224/85447 , H01L2224/85455 , H01L2224/85464 , H01L2224/85466 , H01L2224/8592 , H01L2224/94 , H01L2224/97 , H01L2225/0651 , H01L2225/06513 , H01L2225/06551 , H01L2225/06562 , H01L2225/06575 , H01L2924/00014 , H01L2924/01015 , H01L2924/01047 , H01L2924/01079 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15159 , H01L2924/157 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2224/03 , H01L2224/85 , H01L2924/00 , H01L2224/48455 , H01L2924/00012 , H01L2224/4554
Abstract: 本发明提供一种能容易与主基板上的IC连接的、具备半导体元件(104)的基台(100)。本发明的一个实施方式的基台(100)包括基板(101)、电极(102)、(103)、半导体元件(104)、Au引线(105)和金凸起(106)、(107)。电极(102)、(103)、半导体元件(104)、Au引线(105)和金凸起(106)、(107)由树脂(108)在基板(101)上密封。在电极(103)上并且在Au引线(105)上利用球焊形成金凸起(107)后,对其利用划片加以切断而露出侧面。露出了的面作为基台(100)的侧面电极发挥作用。
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公开(公告)号:CN102956602A
公开(公告)日:2013-03-06
申请号:CN201110399930.5
申请日:2011-12-02
Applicant: 台湾积体电路制造股份有限公司
IPC: H01L23/498
CPC classification number: H01L23/291 , H01L23/3192 , H01L23/5226 , H01L24/05 , H01L2224/02166 , H01L2224/0345 , H01L2224/03452 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05008 , H01L2224/05096 , H01L2224/05552 , H01L2224/05553 , H01L2224/05557 , H01L2224/05558 , H01L2224/05567 , H01L2224/05572 , H01L2224/05573 , H01L2224/05624 , H01L2224/05647 , H01L2224/05666 , H01L2224/05681 , H01L2224/05684 , H01L2224/131 , H01L2224/13147 , H01L2224/45144 , H01L2224/45147 , H01L2224/48624 , H01L2224/48647 , H01L2224/48666 , H01L2224/48681 , H01L2224/48684 , H01L2224/48824 , H01L2224/48847 , H01L2224/48866 , H01L2224/48881 , H01L2224/48884 , H01L2924/00014 , H01L2924/00012 , H01L2924/014 , H01L2924/00
Abstract: 本发明提供了一种形成接合焊盘结构的机构。该接合焊盘具有通过接合焊盘下面的钝化层中的开口形成的凹槽区域。上钝化层至少覆盖了接合焊盘的凹槽区域,以减少困在凹槽区域中的图案化残留物和/或蚀刻残留物。由此降低了接合焊盘腐蚀的可能性。本发明还提供了一种用于减少接合焊盘腐蚀的接合焊盘结构。
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公开(公告)号:CN101636831B
公开(公告)日:2012-08-08
申请号:CN200880002933.7
申请日:2008-04-22
Applicant: 弗利普芯片国际有限公司
IPC: H01L21/60
CPC classification number: H01L24/05 , H01L23/3171 , H01L23/3192 , H01L24/02 , H01L24/03 , H01L24/13 , H01L2224/0235 , H01L2224/0239 , H01L2224/0345 , H01L2224/0346 , H01L2224/0401 , H01L2224/04042 , H01L2224/05022 , H01L2224/05073 , H01L2224/05124 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05541 , H01L2224/05548 , H01L2224/05554 , H01L2224/05555 , H01L2224/05567 , H01L2224/05572 , H01L2224/0558 , H01L2224/05644 , H01L2224/05647 , H01L2224/05666 , H01L2224/1148 , H01L2224/13006 , H01L2224/13007 , H01L2224/13021 , H01L2224/13022 , H01L2224/131 , H01L2224/45144 , H01L2224/45147 , H01L2224/48644 , H01L2224/48647 , H01L2224/48666 , H01L2224/48844 , H01L2224/48847 , H01L2224/48866 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/10271 , H01L2924/10329 , H01L2924/12044 , H01L2924/14 , H01L2924/3011 , H01L2924/351 , H01L2924/00014 , H01L2924/00015 , H01L2224/13099 , H01L2924/00
Abstract: 一种用于包括输入-输出(IO)上凸点结构的半导体封装的设备和方法被披露,其中涉及器件焊盘、凸点下金属焊盘(UBM)、聚合物、及钝化层。从器件焊盘的中央到其外边缘的最短距离与从UBM的中央到其外边缘的最短距离的比值从0.5∶1到0.95∶1。此外,从聚合物的中央到其外边缘的最短距离与从UBM的中央到其外边缘的最短距离的比值从0.35∶1到0.85∶1。此外,从钝化层的中央到其外边缘的最短距离与从UBM的中央到其外边缘的最短距离的比值从0.35∶1到0.80∶1。
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