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公开(公告)号：CN104752342A
公开(公告)日：2015-07-01
申请号：CN201410433157.3
申请日：2014-08-28
Applicant: 现代自动车株式会社
IPC: H01L21/77
CPC classification number: H01L23/544 , H01L21/0272 , H01L21/31133 , H01L21/31144 , H01L24/83 , H01L2223/54426 , H01L2224/83139 , H01L2224/83201 , H01L2224/83902
Abstract: 本发明提供一种接合半导体基板的方法，其可包括：在第一半导体基板上形成对准键；在第一半导体基板和对准键上形成绝缘层；在绝缘层上形成第一金属层图案和第二金属层图案；在第二半导体基板上形成第一突起和第二突起，以及位于第一突起与第二突起之间的对准凹部；分别在第一突起和第二突起上形成第三金属层图案和第四金属层图案；以及接合第一半导体基板和第二半导体基板，其中当接合第一半导体基板和第二半导体基板时，对准键位于对准凹部。
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公开(公告)号：CN103681542B
公开(公告)日：2016-11-23
申请号：CN201310396680.9
申请日：2013-09-04
Applicant: 英飞凌科技股份有限公司
IPC: H01L23/367 , H01L23/31 , H01L21/50 , H01L21/56
CPC classification number: H01L23/13 , H01L23/142 , H01L23/36 , H01L23/492 , H01L23/49513 , H01L23/49562 , H01L24/05 , H01L24/13 , H01L24/19 , H01L24/20 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/80 , H01L24/83 , H01L24/85 , H01L24/92 , H01L2224/0401 , H01L2224/04026 , H01L2224/04042 , H01L2224/04105 , H01L2224/05556 , H01L2224/0556 , H01L2224/05568 , H01L2224/05611 , H01L2224/05618 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0566 , H01L2224/05664 , H01L2224/05666 , H01L2224/12105 , H01L2224/131 , H01L2224/2101 , H01L2224/2105 , H01L2224/211 , H01L2224/2745 , H01L2224/27462 , H01L2224/29006 , H01L2224/29016 , H01L2224/29023 , H01L2224/29026 , H01L2224/29109 , H01L2224/29111 , H01L2224/29118 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/2916 , H01L2224/29164 , H01L2224/29166 , H01L2224/3201 , H01L2224/32057 , H01L2224/32106 , H01L2224/32225 , H01L2224/32237 , H01L2224/32245 , H01L2224/32257 , H01L2224/45111 , H01L2224/45118 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/4516 , H01L2224/45164 , H01L2224/45166 , H01L2224/48091 , H01L2224/48611 , H01L2224/48618 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/4866 , H01L2224/48664 , H01L2224/48666 , H01L2224/48711 , H01L2224/48718 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/4876 , H01L2224/48764 , H01L2224/48766 , H01L2224/48811 , H01L2224/48818 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/4886 , H01L2224/48864 , H01L2224/48866 , H01L2224/73265 , H01L2224/73267 , H01L2224/80903 , H01L2224/821 , H01L2224/82101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83385 , H01L2224/83438 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/8346 , H01L2224/83464 , H01L2224/8382 , H01L2224/83902 , H01L2224/9202 , H01L2224/92247 , H01L2924/00014 , H01L2924/10253 , H01L2924/12042 , H01L2924/15153 , H01L2924/15747 , H01L2924/15787 , H01L2924/181 , H01L2924/00 , H01L2924/01015 , H01L2924/01079 , H01L2924/01047 , H01L2924/01029 , H01L2924/01028 , H01L2924/01082 , H01L2924/01051 , H01L2924/00012 , H01L2924/014 , H01L2224/05552
Abstract: 芯片封装和用于制作芯片封装的方法。提供一种芯片封装，所述芯片封装包括：包括至少一个腔体的载体；至少部分地设置在至少一个腔体内的芯片；设置在芯片的至少一个侧壁上的至少一个中间层；其中至少一个中间层被配置为将来自芯片的热量热传导到载体。
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Patent Agency Ranking
公开(公告)号：CN104680227A
公开(公告)日：2015-06-03
申请号：CN201410459423.X
申请日：2014-09-11
Applicant: 英飞凌科技股份有限公司
IPC: G06K19/077
CPC classification number: G06K19/07728 , G06K19/07722 , G06K19/07747 , G06K19/07775 , H01L21/56 , H01L23/3121 , H01L24/83 , H01L2224/83201 , H01L2224/83902 , H01L2924/06 , H01L2924/12042 , H01L2924/141 , H01L2924/00
Abstract: 本发明涉及芯片卡模块装置、芯片卡以及其制造方法。用于制造芯片卡模块装置的方法，该方法具有：在第一载体层上布置芯片卡模块，其中第一载体层无用于接纳芯片卡模块的预制的芯片卡模块接纳凹处，并且其中芯片卡模块具有衬底、衬底上的芯片和在芯片和衬底之间的第一机械加强结构，其中第一机械加强结构覆盖芯片的表面的至少一部分；将第二载体层施加到芯片卡模块上，其中第二载体层无用于接纳芯片卡模块的预制的芯片卡模块接纳凹处；以及将第一载体层与第二载体层进行层压和/或压合，使得芯片卡模块由第一载体层和第二载体层包围。
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公开(公告)号：CN107851586A
公开(公告)日：2018-03-27
申请号：CN201680006964.4
申请日：2016-01-21
CPC classification number: H01L24/97 , G01R31/2635 , H01L21/6835 , H01L22/14 , H01L22/20 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/75 , H01L24/83 , H01L24/95 , H01L25/50 , H01L2221/68322 , H01L2221/68368 , H01L2221/68381 , H01L2224/27002 , H01L2224/2732 , H01L2224/27334 , H01L2224/29006 , H01L2224/29011 , H01L2224/29019 , H01L2224/29026 , H01L2224/29078 , H01L2224/2919 , H01L2224/32237 , H01L2224/75252 , H01L2224/75253 , H01L2224/7598 , H01L2224/83005 , H01L2224/83121 , H01L2224/8314 , H01L2224/83141 , H01L2224/83143 , H01L2224/8316 , H01L2224/8318 , H01L2224/83191 , H01L2224/83192 , H01L2224/83234 , H01L2224/83238 , H01L2224/83862 , H01L2224/83902 , H01L2224/95 , H01L2224/95001 , H01L2224/97 , H01L2924/00012 , H01L2224/83 , H01L2224/27 , H01L2924/00014 , H01L2924/07802 , H01L2924/0781
Abstract: 一种将微型器件从施体衬底选择性地转移到受体衬底上的接触焊盘的方法。微型器件通过施体力附接至施体衬底。该施体衬底和该受体衬底对准并且被放在一起，从而使得所选择的微型器件满足相应的接触焊盘。生成受体力以将所选择的微型器件固持到该受体衬底上的该接触焊盘。减弱该施体力并且移开该衬底，使得所选择的微型器件在该受体衬底上。公开了生成该受体力的若干方法，该若干方法包括粘合技术、机械技术和静电技术。
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公开(公告)号：CN105103287B
公开(公告)日：2018-03-23
申请号：CN201480018514.8
申请日：2014-03-24
Applicant: 欧司朗光电半导体有限公司
Inventor： 安德烈亚斯·普洛斯尔
IPC: H01L23/62 , H01L21/60 , H01L23/488
CPC classification number: H01L24/83 , H01L21/2855 , H01L21/2885 , H01L21/76874 , H01L24/27 , H01L24/29 , H01L24/32 , H01L2224/27444 , H01L2224/2745 , H01L2224/27462 , H01L2224/27464 , H01L2224/2908 , H01L2224/29082 , H01L2224/29083 , H01L2224/29084 , H01L2224/29109 , H01L2224/29113 , H01L2224/29139 , H01L2224/29166 , H01L2224/32225 , H01L2224/32245 , H01L2224/32505 , H01L2224/83054 , H01L2224/83193 , H01L2224/83203 , H01L2224/83359 , H01L2224/83539 , H01L2224/83825 , H01L2224/83902 , H01L2224/83948 , H01L2924/12041 , H01L2924/01083 , H01L2924/00012 , H01L2924/01322 , H01L2924/00014 , H01L2924/00
Abstract: 提出一种用于连接接合配对件(1，2)、例如光电子半导体芯片(例如发光二极管芯片)和电路板或金属导体框的方法，所述方法具有下述步骤：提供第一接合配对件(1)和第二接合配对件(2)；将第一层序列(10)施加到第一接合配对件(1)上，所述第一层序列包括至少一个包含银或由银构成的层(11，15)；将第二层序列(20)施加到第二接合配对件(2)上，所述第二层序列包括至少一个包含铟和铋的层(29)或者包含铟的层(23)和包含铋的层(22，24)；在最高120℃的接合温度下，在预设的接合时间中，利用接合压强(p)将第一层序列(10)和第二层序列(20)在其分别背离第一接合配对件(1)和第二接合配对件(2)的端面上加压到一起，其中第一层序列(10)和第二层序列(20)熔化成连接层(30)，所述连接层直接邻接于第一接合配对件和第二接合配对件并且其熔化温度至少为260℃。
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公开(公告)号：CN105103287A
公开(公告)日：2015-11-25
申请号：CN201480018514.8
申请日：2014-03-24
Applicant: 欧司朗光电半导体有限公司
Inventor： 安德烈亚斯·普洛斯尔
IPC: H01L23/62 , H01L21/60 , H01L23/488
CPC classification number: H01L24/83 , H01L21/2855 , H01L21/2885 , H01L21/76874 , H01L24/27 , H01L24/29 , H01L24/32 , H01L2224/27444 , H01L2224/2745 , H01L2224/27462 , H01L2224/27464 , H01L2224/2908 , H01L2224/29082 , H01L2224/29083 , H01L2224/29084 , H01L2224/29109 , H01L2224/29113 , H01L2224/29139 , H01L2224/29166 , H01L2224/32225 , H01L2224/32245 , H01L2224/32505 , H01L2224/83054 , H01L2224/83193 , H01L2224/83203 , H01L2224/83359 , H01L2224/83539 , H01L2224/83825 , H01L2224/83902 , H01L2224/83948 , H01L2924/12041 , H01L2924/01083 , H01L2924/00012 , H01L2924/01322 , H01L2924/00014 , H01L2924/00
Abstract: 提出一种用于连接接合配对件(1，2)、例如光电子半导体芯片(例如发光二极管芯片)和电路板或金属导体框的方法，所述方法具有下述步骤：提供第一接合配对件(1)和第二接合配对件(2)；将第一层序列(10)施加到第一接合配对件(1)上，所述第一层序列包括至少一个包含银或由银构成的层(11，15)；将第二层序列(20)施加到第二接合配对件(2)上，所述第二层序列包括至少一个包含铟和铋的层(29)或者包含铟的层(23)和包含铋的层(22，24)；在最高120℃的接合温度下，在预设的接合时间中，利用接合压强(p)将第一层序列(10)和第二层序列(20)在其分别背离第一接合配对件(1)和第二接合配对件(2)的端面上加压到一起，其中第一层序列(10)和第二层序列(20)熔化成连接层(30)，所述连接层直接邻接于第一接合配对件和第二接合配对件并且其熔化温度至少为260℃。
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公开(公告)号：CN103681542A
公开(公告)日：2014-03-26
申请号：CN201310396680.9
申请日：2013-09-04
Applicant: 英飞凌科技股份有限公司
IPC: H01L23/367 , H01L23/31 , H01L21/50 , H01L21/56
CPC classification number: H01L23/13 , H01L23/142 , H01L23/36 , H01L23/492 , H01L23/49513 , H01L23/49562 , H01L24/05 , H01L24/13 , H01L24/19 , H01L24/20 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/80 , H01L24/83 , H01L24/85 , H01L24/92 , H01L2224/0401 , H01L2224/04026 , H01L2224/04042 , H01L2224/04105 , H01L2224/05556 , H01L2224/0556 , H01L2224/05568 , H01L2224/05611 , H01L2224/05618 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0566 , H01L2224/05664 , H01L2224/05666 , H01L2224/12105 , H01L2224/131 , H01L2224/2101 , H01L2224/2105 , H01L2224/211 , H01L2224/2745 , H01L2224/27462 , H01L2224/29006 , H01L2224/29016 , H01L2224/29023 , H01L2224/29026 , H01L2224/29109 , H01L2224/29111 , H01L2224/29118 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/2916 , H01L2224/29164 , H01L2224/29166 , H01L2224/3201 , H01L2224/32057 , H01L2224/32106 , H01L2224/32225 , H01L2224/32237 , H01L2224/32245 , H01L2224/32257 , H01L2224/45111 , H01L2224/45118 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/4516 , H01L2224/45164 , H01L2224/45166 , H01L2224/48091 , H01L2224/48611 , H01L2224/48618 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/4866 , H01L2224/48664 , H01L2224/48666 , H01L2224/48711 , H01L2224/48718 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48747 , H01L2224/48755 , H01L2224/4876 , H01L2224/48764 , H01L2224/48766 , H01L2224/48811 , H01L2224/48818 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/4886 , H01L2224/48864 , H01L2224/48866 , H01L2224/73265 , H01L2224/73267 , H01L2224/80903 , H01L2224/821 , H01L2224/82101 , H01L2224/83191 , H01L2224/83192 , H01L2224/83385 , H01L2224/83438 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/8346 , H01L2224/83464 , H01L2224/8382 , H01L2224/83902 , H01L2224/9202 , H01L2224/92247 , H01L2924/00014 , H01L2924/10253 , H01L2924/12042 , H01L2924/15153 , H01L2924/15747 , H01L2924/15787 , H01L2924/181 , H01L2924/00 , H01L2924/01015 , H01L2924/01079 , H01L2924/01047 , H01L2924/01029 , H01L2924/01028 , H01L2924/01082 , H01L2924/01051 , H01L2924/00012 , H01L2924/014 , H01L2224/05552
Abstract: 芯片封装和用于制作芯片封装的方法。提供一种芯片封装，所述芯片封装包括：包括至少一个腔体的载体；至少部分地设置在至少一个腔体内的芯片；设置在芯片的至少一个侧壁上的至少一个中间层；其中至少一个中间层被配置为将来自芯片的热量热传导到载体。
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