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公开(公告)号:CN104798185B
公开(公告)日:2018-04-10
申请号:CN201380059808.0
申请日:2013-11-13
IPC: H01L21/52
CPC classification number: H01L23/49513 , H01L21/4853 , H01L23/3735 , H01L23/4827 , H01L23/488 , H01L23/492 , H01L23/49548 , H01L23/49562 , H01L23/49582 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/75 , H01L24/83 , H01L2224/0345 , H01L2224/04026 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05639 , H01L2224/2732 , H01L2224/291 , H01L2224/29144 , H01L2224/32059 , H01L2224/3207 , H01L2224/32225 , H01L2224/32245 , H01L2224/32505 , H01L2224/7501 , H01L2224/75102 , H01L2224/75251 , H01L2224/75756 , H01L2224/83011 , H01L2224/83022 , H01L2224/83048 , H01L2224/83075 , H01L2224/8309 , H01L2224/83101 , H01L2224/8321 , H01L2224/83385 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83455 , H01L2224/83457 , H01L2224/83815 , H01L2924/01322 , H01L2924/12042 , H01L2924/15747 , H01L2924/15787 , H01L2924/35121 , H01L2924/3651 , H01L2924/01032 , H01L2924/01014 , H01L2924/0105 , H01L2924/014 , H01L2924/00014 , H01L2924/01027 , H01L2924/01015 , H01L2924/00012 , H01L2924/00
Abstract: 本发明的半导体装置在半导体元件(1)和以Cu为主要原料的Cu基板(2)之间夹持有Au系钎料层(3),且在Cu基板(2)和Au系钎料层(3)之间配设有具有以在俯视时成为规定形状的方式构图的微细槽(24)的致密金属膜(23),分别在Cu基板(2)、Au系钎料层(3)及致密金属膜(23)的微细槽(24)埋设有以Cu和Au为主要元素的微小哑铃截面构造体(4)。
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公开(公告)号:CN104701285B
公开(公告)日:2018-03-23
申请号:CN201510063568.2
申请日:2011-01-13
Applicant: 精材科技股份有限公司
IPC: H01L23/485 , H01L21/60
CPC classification number: H01L21/76898 , H01L21/481 , H01L21/76897 , H01L23/3178 , H01L23/3192 , H01L23/5389 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/19 , H01L24/94 , H01L27/14618 , H01L27/14636 , H01L2224/02372 , H01L2224/0345 , H01L2224/0401 , H01L2224/04026 , H01L2224/04105 , H01L2224/05548 , H01L2224/05567 , H01L2224/05624 , H01L2224/05639 , H01L2224/05647 , H01L2224/05655 , H01L2224/06181 , H01L2224/1132 , H01L2224/11462 , H01L2224/11849 , H01L2224/13022 , H01L2224/131 , H01L2224/20 , H01L2224/94 , H01L2224/97 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01047 , H01L2924/01075 , H01L2924/01079 , H01L2924/014 , H01L2924/12041 , H01L2924/14 , H01L2924/1461 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/00
Abstract: 提供一种晶片封装体,晶片封装体包括半导体基底,具有第一表面和相对的第二表面。间隔层设置在半导体基底的第二表面下方,并且盖板设置在间隔层下方。形成凹陷部邻接半导体基底的侧壁,由半导体基底的第一表面至少延伸至间隔层。然后,保护层设置在半导体基底的第一表面之上以及凹陷部内。本发明可提升晶片封装体的信赖性,并避免导线层产生脱层现象。
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公开(公告)号:CN103515252B
公开(公告)日:2018-01-30
申请号:CN201310158510.7
申请日:2013-05-02
Applicant: 新科金朋有限公司
IPC: H01L21/56 , H01L21/60 , H05K3/34 , H01L23/31 , H01L23/538
CPC classification number: H01L23/49827 , H01L21/4853 , H01L21/56 , H01L21/561 , H01L21/568 , H01L21/78 , H01L23/3114 , H01L23/3121 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L23/49822 , H01L23/5389 , H01L23/562 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/27 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/82 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/94 , H01L24/97 , H01L25/03 , H01L25/50 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/05082 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/06131 , H01L2224/06133 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/11849 , H01L2224/11901 , H01L2224/12105 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/2101 , H01L2224/215 , H01L2224/2401 , H01L2224/24011 , H01L2224/2402 , H01L2224/245 , H01L2224/27334 , H01L2224/32225 , H01L2224/32245 , H01L2224/45147 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/48245 , H01L2224/48247 , H01L2224/48811 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/73253 , H01L2224/73265 , H01L2224/73267 , H01L2224/81191 , H01L2224/82101 , H01L2224/82104 , H01L2224/82106 , H01L2224/83132 , H01L2224/83191 , H01L2224/83192 , H01L2224/83856 , H01L2224/85411 , H01L2224/85424 , H01L2224/85439 , H01L2224/85444 , H01L2224/85447 , H01L2224/85455 , H01L2224/92147 , H01L2224/92244 , H01L2224/92247 , H01L2224/94 , H01L2224/97 , H01L2924/00011 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2924/3511 , H01L2924/3512 , H01L2924/00014 , H01L2924/00 , H01L2224/03 , H01L2924/00012 , H01L2224/83 , H01L2224/85 , H01L2224/27 , H01L2924/014 , H01L2924/01082 , H01L2924/0105 , H01L2224/81805 , H01L2924/01005
Abstract: 本发明涉及形成嵌入式SoP扇出型封装的半导体器件和方法。一种半导体器件,包括球栅阵列(BGA)封装,球栅阵列(BGA)封装包括第一凸块。在第一凸块之间将第一半导体管芯安装至BGA封装。将BGA封装和第一半导体管芯安装至载体。将第一密封剂沉积在载体之上以及BGA封装和第一半导体管芯周围。移除载体,以暴露第一凸块和第一半导体管芯。将互连结构电连接至第一凸块和第一半导体管芯。BGA封装还包括衬底和第二半导体管芯,第二半导体管芯被安装且电连接至衬底。将第二密封剂沉积在第二半导体管芯和衬底之上。在衬底之上与第二半导体管芯相对地形成第一凸块。在BGA封装之上形成翘曲平衡层。
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公开(公告)号:CN104425394B
公开(公告)日:2018-01-12
申请号:CN201410436888.3
申请日:2014-08-29
Applicant: 财团法人工业技术研究院
CPC classification number: H01L23/481 , G02B6/12 , G02B6/34 , G02B2006/12061 , H01L21/30604 , H01L21/486 , H01L21/76898 , H01L23/13 , H01L23/147 , H01L23/49827 , H01L23/60 , H01L24/05 , H01L24/06 , H01L24/08 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/80 , H01L25/167 , H01L27/0255 , H01L29/861 , H01L33/20 , H01L33/62 , H01L2224/04 , H01L2224/0401 , H01L2224/04026 , H01L2224/04042 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/06102 , H01L2224/08148 , H01L2224/08238 , H01L2224/16148 , H01L2224/16238 , H01L2224/29294 , H01L2224/32148 , H01L2224/32238 , H01L2224/48091 , H01L2224/48105 , H01L2224/48148 , H01L2224/48229 , H01L2224/73265 , H01L2224/80801 , H01L2224/80805 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/83439 , H01L2224/83444 , H01L2224/83447 , H01L2224/83805 , H01L2224/85439 , H01L2224/85444 , H01L2224/85447 , H01L2924/00014 , H01L2924/01322 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/1434 , H01L2933/0066 , H01S5/0208 , H01S5/02469 , H01S5/026 , H01S5/34 , H01L2924/00 , H01L2224/80 , H01L2924/00012 , H01L2224/45099
Abstract: 本发明公开一种基板、其制造方法及其应用,该基板包括基材、两个导体结构以及至少一二极管。两个导体结构分别从基材的第一表面,经由贯穿基材的两个穿孔,延伸到基材的第二表面。至少一二极管埋入于所述穿孔其中之一的一侧壁的基材中。
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公开(公告)号:CN103855037B
公开(公告)日:2018-01-09
申请号:CN201310625260.3
申请日:2013-11-28
Applicant: 同和金属技术有限公司
IPC: H01L21/48 , H01L21/60 , H01L23/488
CPC classification number: H01L21/4857 , C23C24/106 , H01L23/3735 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/29006 , H01L2224/29294 , H01L2224/29339 , H01L2224/2949 , H01L2224/32013 , H01L2224/32225 , H01L2224/83009 , H01L2224/83075 , H01L2224/83192 , H01L2224/83203 , H01L2224/83385 , H01L2224/83395 , H01L2224/83424 , H01L2224/83439 , H01L2224/83444 , H01L2224/83455 , H01L2224/83464 , H01L2224/8384 , H01L2924/10253 , H01L2924/12042 , H01L2924/12044 , H01L2924/15787 , H01L2924/203 , Y10T428/12472 , H01L2924/00012 , H01L2924/00015 , H01L2924/01015 , H01L2924/00014 , H01L2924/01014 , H01L2924/01005 , H01L2924/00 , H01L2924/0002
Abstract: 本发明提供一种电子部件安装基板,包括:大致具有矩形平面形状的铝或铝合金的(用于安装电子部件的)金属板(10),该金属板(10)的一个主面经表面处理从而具有不低于0.2微米的表面粗糙度;形成在金属板(10)的一个主面上的镍或镍合金的镀膜(20);通过(含有银的烧结体的)银粘接层(12)与镀膜(20)相接合的电子部件(14);大致具有矩形平面形状的陶瓷基板(16),该陶瓷基板(16)的一个主面与金属板(10)的另一主面相接合;以及与陶瓷基板(16)的另一主面相接合的散热金属板(金属底板)(18)。
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公开(公告)号:CN107431058A
公开(公告)日:2017-12-01
申请号:CN201680015610.6
申请日:2016-02-15
Applicant: 派克泰克封装技术有限公司
IPC: H01L23/482 , H01L21/60 , H01L21/283 , H01L23/49 , H01L21/268
CPC classification number: H01L24/48 , B23K26/20 , H01L24/03 , H01L24/05 , H01L24/16 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/73 , H01L24/77 , H01L24/81 , H01L24/84 , H01L24/85 , H01L2224/04034 , H01L2224/04042 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05164 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/16225 , H01L2224/37026 , H01L2224/37147 , H01L2224/40091 , H01L2224/40225 , H01L2224/40491 , H01L2224/40992 , H01L2224/40997 , H01L2224/4112 , H01L2224/45005 , H01L2224/45147 , H01L2224/48091 , H01L2224/48106 , H01L2224/48227 , H01L2224/48247 , H01L2224/48839 , H01L2224/48847 , H01L2224/73255 , H01L2224/77263 , H01L2224/77281 , H01L2224/77601 , H01L2224/77611 , H01L2224/77704 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81464 , H01L2224/84214 , H01L2224/84424 , H01L2224/84439 , H01L2224/84444 , H01L2224/84447 , H01L2224/84455 , H01L2224/84464 , H01L2224/8484 , H01L2224/8485 , H01L2224/84986 , H01L2224/85051 , H01L2224/85203 , H01L2224/85214 , H01L2224/85379 , H01L2224/8584 , H01L2924/00014 , H01L2924/10253 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/1579 , H01L2224/13099
Abstract: 本发明涉及一种芯片装置(10)以及一种用于在芯片(18)和导体材料带(14)之间构成接触连接部(11)的方法,所述芯片尤其是功率晶体管等,其中导体材料带在不导电的衬底(12)上构成,其中芯片设置在衬底或导体材料带(15)上,其中分别在芯片的芯片接触面(25)和导体材料带(28)上施加银膏(29)或者铜膏,其中接触导体(30)浸入到芯片接触面上的银膏或铜膏中并且浸入到导体材料带上的银膏或铜膏中,其中包含在银膏或铜膏中的溶剂通过加热至少部分地蒸发,其中接触连接部通过如下方式构成:银膏或铜膏借助于激光能量烧结。
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公开(公告)号:CN104752236B
公开(公告)日:2017-10-13
申请号:CN201410385450.7
申请日:2014-08-07
Applicant: 台湾积体电路制造股份有限公司
IPC: H01L21/50
CPC classification number: H01L21/565 , H01L21/486 , H01L21/56 , H01L21/561 , H01L21/563 , H01L21/6835 , H01L21/6836 , H01L23/145 , H01L23/147 , H01L23/28 , H01L23/29 , H01L23/31 , H01L23/3107 , H01L23/3114 , H01L23/3128 , H01L23/3135 , H01L23/36 , H01L23/49816 , H01L23/49827 , H01L23/5329 , H01L23/5384 , H01L23/60 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/0652 , H01L25/0655 , H01L25/50 , H01L2221/68327 , H01L2221/6834 , H01L2224/0345 , H01L2224/03452 , H01L2224/0401 , H01L2224/0557 , H01L2224/05573 , H01L2224/05583 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05671 , H01L2224/05684 , H01L2224/06181 , H01L2224/11002 , H01L2224/1132 , H01L2224/11334 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/13082 , H01L2224/13109 , H01L2224/13111 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/1403 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2224/81192 , H01L2224/81815 , H01L2224/81895 , H01L2224/83191 , H01L2224/83192 , H01L2224/92125 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06589 , H01L2924/10252 , H01L2924/10253 , H01L2924/10254 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/10333 , H01L2924/10335 , H01L2924/10342 , H01L2924/12042 , H01L2924/1431 , H01L2924/1432 , H01L2924/1434 , H01L2924/15311 , H01L2924/157 , H01L2924/1579 , H01L2924/181 , H01L2924/18161 , H01L2924/00 , H01L2224/11 , H01L2224/03 , H01L2924/00012
Abstract: 本公开的实施例包括半导体封装件及其形成方法。一个实施例是一种方法,包括:将管芯安装到衬底的顶面以形成器件;将管芯和衬底的顶面封装在模塑料中,模塑料在管芯之上具有第一厚度;以及去除管芯之上的模塑料的部分但非所有厚度。该方法还包括对器件执行进一步处理并且去除管芯之上的模塑料的剩余厚度。
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公开(公告)号:CN103165473B
公开(公告)日:2017-08-25
申请号:CN201210536283.2
申请日:2012-12-12
Applicant: 三星电子株式会社
IPC: H01L21/48
CPC classification number: H01L21/76892 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05023 , H01L2224/05171 , H01L2224/05568 , H01L2224/05639 , H01L2224/05644 , H01L2224/05664 , H01L2224/05669 , H01L2224/1132 , H01L2224/11849 , H01L2224/13006 , H01L2224/13007 , H01L2224/13012 , H01L2224/13016 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2924/00014 , H01L2924/00012 , H01L2224/05552
Abstract: 可以提供一种凸起制造方法。所述凸起制造方法可以包括:在包括在半导体器件中的电极焊盘上形成凸起;以及通过在氧气氛下对形成在半导体器件上的凸起进行回流来控制凸起的形状。
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公开(公告)号:CN107039337A
公开(公告)日:2017-08-11
申请号:CN201610882505.4
申请日:2016-10-10
Applicant: 商升特公司
IPC: H01L21/768 , H01L23/538
CPC classification number: H01L25/065 , H01L21/4825 , H01L21/486 , H01L21/4882 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/295 , H01L23/3107 , H01L23/3121 , H01L23/3192 , H01L23/367 , H01L23/4334 , H01L23/49541 , H01L23/49827 , H01L23/552 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/97 , H01L25/50 , H01L2224/05008 , H01L2224/05548 , H01L2224/05567 , H01L2224/05569 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/1132 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/1147 , H01L2224/13005 , H01L2224/13013 , H01L2224/13014 , H01L2224/13022 , H01L2224/13082 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13166 , H01L2224/13184 , H01L2224/16057 , H01L2224/16238 , H01L2224/32245 , H01L2224/73253 , H01L2224/81011 , H01L2224/81024 , H01L2224/81191 , H01L2224/81815 , H01L2224/94 , H01L2224/97 , H01L2924/3841 , H01L2224/11 , H01L2924/00014 , H01L2924/01047 , H01L2924/01029 , H01L2924/01028 , H01L2924/01079 , H01L2924/01046 , H01L2924/2064 , H01L2924/2075 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2224/03 , H01L2224/81 , H01L21/76885 , H01L23/5386
Abstract: 本发明涉及用有微柱的半导体管芯形成DCALGA封装的方法和半导体器件。半导体器件具有布置在衬底之上的第一半导体管芯。在半导体管芯之上形成多个复合互连结构。复合互连结构具有不可熔导电柱和在不可熔导电柱之上形成的可熔层。可熔层被回流以将第一半导体管芯连接到衬底的导电层。不可熔导电柱在回流期间不熔化,从而消除了在衬底之上形成阻焊剂的需要。将密封剂沉积在第一半导体管芯和复合互连结构周围。密封剂在第一半导体管芯的有源表面和衬底之间流动。第二半导体管芯相邻于第一半导体管芯布置在衬底之上。散热器布置在第一半导体管芯之上。密封剂的一部分被移除以暴露散热器。
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公开(公告)号:CN106816390A
公开(公告)日:2017-06-09
申请号:CN201610911666.1
申请日:2016-10-20
Applicant: 台湾积体电路制造股份有限公司
CPC classification number: H01L21/76834 , H01L21/56 , H01L21/76828 , H01L23/291 , H01L23/295 , H01L23/3114 , H01L23/3192 , H01L23/5328 , H01L23/5329 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L2224/02313 , H01L2224/0401 , H01L2224/05022 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05164 , H01L2224/05181 , H01L2224/05548 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05684 , H01L2224/10125 , H01L2224/10126 , H01L2224/11462 , H01L2224/1191 , H01L2224/13022 , H01L2224/13024 , H01L2224/131 , H01L2224/13111 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13184 , H01L2924/00014 , H01L2924/014 , H01L2224/11019 , H01L2224/13
Abstract: 一种形成晶圆级芯片尺寸包装互连件的方法包括:在衬底上形成后钝化互连(PPI)层;在PPI层上形成互连件;并且在衬底上释放模塑料,流动模塑料以横向密封部分互连件。本发明实施例涉及晶圆级芯片尺寸封装互连件及其制造方法。
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