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公开(公告)号:CN104465418B
公开(公告)日:2017-12-19
申请号:CN201410818160.7
申请日:2014-12-24
Applicant: 通富微电子股份有限公司
Inventor: 石磊
CPC classification number: H01L21/561 , H01L21/4821 , H01L21/568 , H01L23/3121 , H01L23/49541 , H01L23/49816 , H01L23/49822 , H01L23/49861 , H01L24/08 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/80 , H01L24/81 , H01L24/83 , H01L24/85 , H01L24/92 , H01L2224/08225 , H01L2224/131 , H01L2224/16227 , H01L2224/2919 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73251 , H01L2224/80904 , H01L2224/81005 , H01L2224/81801 , H01L2224/83005 , H01L2224/83104 , H01L2224/85005 , H01L2224/85439 , H01L2224/85464 , H01L2224/9202 , H01L2224/9222 , H01L2224/97 , H01L2924/00014 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2924/01046 , H01L2224/45099 , H01L2924/014 , H01L2224/08 , H01L2224/48 , H01L2224/80 , H01L2224/85 , H01L21/56 , H01L2924/066
Abstract: 本发明提供一种扇出晶圆级封装方法,包括以下工艺步骤:提供载板;在载板上贴上一层可剥离保护膜,并在特定区域形成图形开口;在所述的图形开口中形成金属层;将带有金属层的保护膜从载板上剥离;将芯片安装在所述的在金属层上,并进行打线或植球;对芯片和金属布线进行塑封。本发明的技术方案,工艺简单,封装精度高,成本低,能够适用于高密集的I/O端封装结构中,特别适用于薄型封装工艺中。
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公开(公告)号:CN104054171B
公开(公告)日:2017-11-07
申请号:CN201280053476.0
申请日:2012-08-03
Applicant: 国际商业机器公司
CPC classification number: H01L23/4825 , H01L21/6835 , H01L21/76819 , H01L22/32 , H01L22/34 , H01L23/5223 , H01L23/5283 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/08 , H01L24/13 , H01L24/16 , H01L24/80 , H01L24/81 , H01L29/1054 , H01L2221/68327 , H01L2221/6834 , H01L2221/68363 , H01L2221/68381 , H01L2224/0361 , H01L2224/0401 , H01L2224/05166 , H01L2224/05187 , H01L2224/05567 , H01L2224/05624 , H01L2224/05687 , H01L2224/06181 , H01L2224/08225 , H01L2224/131 , H01L2224/73251 , H01L2224/80011 , H01L2224/80013 , H01L2224/80075 , H01L2224/80203 , H01L2224/804 , H01L2224/80487 , H01L2224/80896 , H01L2224/80907 , H01L2224/80948 , H01L2224/81203 , H01L2224/81801 , H01L2224/81815 , H01L2924/00014 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/15788 , H01L2924/014 , H01L2224/08 , H01L2224/16 , H01L2924/05432 , H01L2924/053 , H01L2924/01031 , H01L2924/01033 , H01L2924/04941 , H01L2924/00 , H01L2224/05552
Abstract: 公开了用于接合基板表面的方法、接合基板组件和用于接合基板组件的设计结构。通过使用器件基板(10)的第一表面(15)形成产品芯片(25)的器件结构(18、19、20、21)。在产品芯片上形成用于器件结构的互连结构的布线层(26)。布线层被平整化。临时操作晶片(52)被可去除地接合到平整化后的布线层。响应可去除地将临时操作晶片接合到平整化后的第一布线层,器件基板的与第一表面相对的第二表面(54)被接合到最终操作基板(56)。然后从组件去除临时操作晶片。
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公开(公告)号:CN104956782B
公开(公告)日:2018-05-11
申请号:CN201480003922.6
申请日:2014-01-09
Applicant: 德克萨斯仪器股份有限公司
Inventor: L·H·M@E·李 , A·F·B·A·阿齐兹 , S·G·G·林 , N·S·长
IPC: H05K3/36
CPC classification number: H01L23/49575 , H01L21/56 , H01L21/565 , H01L21/82 , H01L23/3107 , H01L23/49537 , H01L23/49551 , H01L24/08 , H01L24/13 , H01L24/16 , H01L24/73 , H01L24/80 , H01L24/81 , H01L24/92 , H01L24/97 , H01L2224/0401 , H01L2224/08245 , H01L2224/131 , H01L2224/16245 , H01L2224/73251 , H01L2224/80904 , H01L2224/8121 , H01L2224/81815 , H01L2224/92222 , H01L2224/97 , H01L2924/181 , H01L2924/014 , H01L2924/00014 , H01L2224/81 , H01L2224/80 , H01L2224/16 , H01L2224/08 , H01L2924/00
Abstract: 一种集成电路装置,包括基本上定位在第一平面中的大致平坦管芯附接焊盘(DAP)130;和基本上定位在第二平面中的大致平坦引线条160,其中,第二平面在第一平面上方且平行于第一平面,并且大致平坦引线条160具有至少一个向下且向外延伸的引线条引线162从其突出并基本上终止在第一平面中;具有多个大致平坦触点焊盘30和多个引线50的顶部引线框12,其中,触点焊盘30基本上定位在位于第二平面上方且平行于第二平面的第三平面中,引线50具有连接到触点焊盘30的近端部分60并具有基本上终止在第一平面中、向下且向外延伸的远端部分62;连接到顶部引线框12和DAP 130的IC管芯72;以及封装DAP 130、引线条162、顶部引线框12和IC管芯72的至少部分的封装材料200。
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公开(公告)号:CN104054171A
公开(公告)日:2014-09-17
申请号:CN201280053476.0
申请日:2012-08-03
Applicant: 国际商业机器公司
CPC classification number: H01L23/4825 , H01L21/6835 , H01L21/76819 , H01L22/32 , H01L22/34 , H01L23/5223 , H01L23/5283 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/08 , H01L24/13 , H01L24/16 , H01L24/80 , H01L24/81 , H01L29/1054 , H01L2221/68327 , H01L2221/6834 , H01L2221/68363 , H01L2221/68381 , H01L2224/0361 , H01L2224/0401 , H01L2224/05166 , H01L2224/05187 , H01L2224/05567 , H01L2224/05624 , H01L2224/05687 , H01L2224/06181 , H01L2224/08225 , H01L2224/131 , H01L2224/73251 , H01L2224/80011 , H01L2224/80013 , H01L2224/80075 , H01L2224/80203 , H01L2224/804 , H01L2224/80487 , H01L2224/80896 , H01L2224/80907 , H01L2224/80948 , H01L2224/81203 , H01L2224/81801 , H01L2224/81815 , H01L2924/00014 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/15788 , H01L2924/014 , H01L2224/08 , H01L2224/16 , H01L2924/05432 , H01L2924/053 , H01L2924/01031 , H01L2924/01033 , H01L2924/04941 , H01L2924/00 , H01L2224/05552
Abstract: 公开了用于接合基板表面的方法、接合基板组件和用于接合基板组件的设计结构。通过使用器件基板(10)的第一表面(15)形成产品芯片(25)的器件结构(18、19、20、21)。在产品芯片上形成用于器件结构的互连结构的布线层(26)。布线层被平整化。临时操作晶片(52)被可去除地接合到平整化后的布线层。响应可去除地将临时操作晶片接合到平整化后的第一布线层,器件基板的与第一表面相对的第二表面(54)被接合到最终操作基板(56)。然后从组件去除临时操作晶片。
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公开(公告)号:CN107134408A
公开(公告)日:2017-09-05
申请号:CN201611190738.4
申请日:2016-12-21
Applicant: 台湾积体电路制造股份有限公司
CPC classification number: H01L21/68764 , H01L21/02049 , H01L21/187 , H01L21/2007 , H01L21/76251 , H01L22/12 , H01L22/20 , H01L24/05 , H01L24/08 , H01L24/799 , H01L24/80 , H01L24/94 , H01L24/98 , H01L2224/04 , H01L2224/05624 , H01L2224/05647 , H01L2224/08145 , H01L2224/80203 , H01L2224/80801 , H01L2224/80805 , H01L2224/80893 , H01L2224/80895 , H01L2224/80896 , H01L2224/80908 , H01L2224/80948 , H01L2224/80986 , H01L2224/94 , H01L2224/80 , H01L2924/00014 , H01L2224/08 , H01L2224/808 , H01L21/67011
Abstract: 本发明公开了一种半导体制造方法。该方法包括:提供第一晶圆和第二晶圆,其中,所述第一晶圆和所述第二晶圆接合在一起;将已接合的所述第一晶圆和所述第二晶圆浸没在超声波传输介质中;产生超声波;以及通过超声波传输介质,将超声波传导至已接合的第一晶圆和第二晶圆并且持续预定的时间段。本发明还公开了相关的用于至少减弱接合晶圆的接合强度的半导体制造系统。
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公开(公告)号:CN104465418A
公开(公告)日:2015-03-25
申请号:CN201410818160.7
申请日:2014-12-24
Applicant: 南通富士通微电子股份有限公司
Inventor: 石磊
CPC classification number: H01L21/561 , H01L21/4821 , H01L21/568 , H01L23/3121 , H01L23/49541 , H01L23/49816 , H01L23/49822 , H01L23/49861 , H01L24/08 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/80 , H01L24/81 , H01L24/83 , H01L24/85 , H01L24/92 , H01L2224/08225 , H01L2224/131 , H01L2224/16227 , H01L2224/2919 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73251 , H01L2224/80904 , H01L2224/81005 , H01L2224/81801 , H01L2224/83005 , H01L2224/83104 , H01L2224/85005 , H01L2224/85439 , H01L2224/85464 , H01L2224/9202 , H01L2224/9222 , H01L2224/97 , H01L2924/00014 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2924/01046 , H01L2224/45099 , H01L2924/014 , H01L2224/08 , H01L2224/48 , H01L2224/80 , H01L2224/85 , H01L21/56 , H01L2924/066 , H01L2224/8319
Abstract: 本发明提供一种扇出晶圆级封装方法,包括以下工艺步骤:提供载板;在载板上贴上一层可剥离保护膜,并在特定区域形成图形开口;在所述的图形开口上形成金属层;将带有金属层的保护膜从载板上剥离;将芯片安装在所述的在金属层上,并进行打线或植球;对芯片和金属布线进行塑封。本发明的技术方案,工艺简单,封装精度高,成本低,能够适用于高密集的I/O端封装结构中,特别适用于薄型封装工艺中。
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公开(公告)号:CN107017221A
公开(公告)日:2017-08-04
申请号:CN201610909215.4
申请日:2016-10-19
Applicant: 德州仪器公司
Inventor: 李汉蒙@尤金·李 , 阿尼斯·福齐·宾·阿卜杜勒·阿齐兹 , 休安·利姆·伟·芬
IPC: H01L23/498 , H01L21/48
CPC classification number: H01L23/5386 , H01L21/4853 , H01L21/561 , H01L21/563 , H01L21/565 , H01L21/76898 , H01L21/78 , H01L23/3121 , H01L23/481 , H01L23/49503 , H01L23/4952 , H01L23/5384 , H01L24/05 , H01L24/08 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/80 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/97 , H01L2224/04 , H01L2224/04026 , H01L2224/05009 , H01L2224/0579 , H01L2224/05839 , H01L2224/08245 , H01L2224/29009 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/29339 , H01L2224/32013 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48464 , H01L2224/48465 , H01L2224/49171 , H01L2224/73251 , H01L2224/73265 , H01L2224/9222 , H01L2224/92247 , H01L2224/97 , H01L2924/35121 , H01L2924/3862 , H01L2924/00014 , H01L2224/291 , H01L2924/014 , H01L2924/00012 , H01L2224/83 , H01L2224/85 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/00 , H01L2924/0781 , H01L2924/0665 , H01L2224/08 , H01L2224/80 , H01L2224/48 , H01L23/49827 , H01L21/486
Abstract: 本申请案涉及一种集成电路组合件。集成电路IC裸片包含顶面及底面、位于所述顶面与所述底面之间的多个分隔开的接地连接迹线;其中所述裸片中的孔暴露所述多个分隔开的接地连接迹线。
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公开(公告)号:CN107293499A
公开(公告)日:2017-10-24
申请号:CN201610851698.7
申请日:2016-09-26
Applicant: 意法半导体股份有限公司
CPC classification number: H01L21/4828 , H01L21/4825 , H01L21/4832 , H01L21/4875 , H01L21/56 , H01L21/561 , H01L23/3107 , H01L23/3171 , H01L23/4822 , H01L23/4924 , H01L23/49582 , H01L24/05 , H01L24/08 , H01L24/10 , H01L24/80 , H01L24/97 , H01L2224/04 , H01L2224/05553 , H01L2224/05554 , H01L2224/05555 , H01L2224/05567 , H01L2224/08258 , H01L2224/16245 , H01L2224/80207 , H01L2224/80439 , H01L2224/80444 , H01L2224/80455 , H01L2224/97 , H01L2924/00012 , H01L2924/181 , H01L2924/00014 , H01L2224/80 , H01L2224/08 , H01L24/83 , H01L23/3185 , H01L2224/80205
Abstract: 本公开涉及用于倒装芯片封装件的热超声接合的连接,具体公开了制造封装件的方法。该方法可以包括:在衬底的第一表面上形成接合焊盘;通过在衬底的第二表面中蚀刻凹部在衬底中形成引线,第二表面与第一表面相对;以及使引线的顶面的至少一部分镀敷有表面镀敷层。该方法还可以包括:通过将表面镀敷层热超声地接合至裸片来将引线热超声地接合至裸片,以及在密封剂中密封裸片和引线。
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公开(公告)号:CN106711131A
公开(公告)日:2017-05-24
申请号:CN201610730201.6
申请日:2016-08-26
Applicant: 台湾积体电路制造股份有限公司
IPC: H01L25/065 , H01L23/48 , H01L21/98
CPC classification number: H01L25/0657 , H01L21/76898 , H01L24/05 , H01L24/08 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/80 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/50 , H01L2224/04 , H01L2224/0401 , H01L2224/05557 , H01L2224/05638 , H01L2224/05647 , H01L2224/05687 , H01L2224/0569 , H01L2224/08145 , H01L2224/1161 , H01L2224/11616 , H01L2224/11831 , H01L2224/13009 , H01L2224/13019 , H01L2224/13124 , H01L2224/13147 , H01L2224/13184 , H01L2224/1601 , H01L2224/16012 , H01L2224/16145 , H01L2224/16146 , H01L2224/2919 , H01L2224/32145 , H01L2224/73201 , H01L2224/73204 , H01L2224/80075 , H01L2224/80203 , H01L2224/80896 , H01L2224/8101 , H01L2224/81011 , H01L2224/81012 , H01L2224/81022 , H01L2224/81075 , H01L2224/81203 , H01L2224/81895 , H01L2224/83075 , H01L2224/83104 , H01L2224/83191 , H01L2224/83203 , H01L2224/9211 , H01L2224/94 , H01L2225/06513 , H01L2225/06544 , H01L2225/06565 , H01L2924/1434 , H01L2924/3511 , H01L2224/81 , H01L2924/01014 , H01L2924/05442 , H01L2924/05042 , H01L2924/00014 , H01L2924/07025 , H01L2224/83 , H01L2224/80 , H01L2924/00012 , H01L2224/08 , H01L2224/16 , H01L2924/01029 , H01L2924/00
Abstract: 本发明提供了一种半导体封装件,该半导体封装件包括具有第一连接表面的第一器件、至少部分地从第一连接表面突出的第一导电组件、具有面向第一连接表面的第二连接表面的第二器件和至少从第二连接表面暴露出的第二导电组件。第一导电组件和第二导电组件形成具有第一喙的接头。第一喙指向第一连接表面或第二连接表面。本发明的实施例还涉及半导体封装件的形成方法。
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公开(公告)号:CN105448861A
公开(公告)日:2016-03-30
申请号:CN201410308869.2
申请日:2014-06-30
Applicant: 中芯国际集成电路制造(上海)有限公司
Inventor: 陈福成
IPC: H01L23/48 , H01L21/603 , H01L21/98
CPC classification number: H01L24/05 , H01L24/03 , H01L24/06 , H01L24/08 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/80 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/0657 , H01L25/50 , H01L2224/02175 , H01L2224/0345 , H01L2224/03452 , H01L2224/0381 , H01L2224/03831 , H01L2224/04 , H01L2224/0401 , H01L2224/05018 , H01L2224/05027 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05181 , H01L2224/05187 , H01L2224/05558 , H01L2224/05562 , H01L2224/05572 , H01L2224/05611 , H01L2224/05647 , H01L2224/05681 , H01L2224/05687 , H01L2224/06051 , H01L2224/061 , H01L2224/06505 , H01L2224/08058 , H01L2224/08111 , H01L2224/08145 , H01L2224/10145 , H01L2224/1148 , H01L2224/1181 , H01L2224/13022 , H01L2224/13111 , H01L2224/13147 , H01L2224/16058 , H01L2224/16145 , H01L2224/27831 , H01L2224/29187 , H01L2224/32145 , H01L2224/73101 , H01L2224/73104 , H01L2224/73201 , H01L2224/73204 , H01L2224/80011 , H01L2224/80012 , H01L2224/80203 , H01L2224/80895 , H01L2224/80896 , H01L2224/81011 , H01L2224/81193 , H01L2224/81203 , H01L2224/81895 , H01L2224/81948 , H01L2224/83011 , H01L2224/83193 , H01L2224/83203 , H01L2224/83896 , H01L2224/83948 , H01L2224/9211 , H01L2225/06513 , H01L2225/06555 , H01L2225/06593 , H01L2924/01029 , H01L2924/0105 , H01L2924/00014 , H01L2924/04941 , H01L2924/00012 , H01L2224/81 , H01L2224/83 , H01L2924/05442 , H01L2924/059 , H01L2924/04642 , H01L2924/05042 , H01L2224/05 , H01L2224/13 , H01L2224/08 , H01L2224/16 , H01L2224/80 , H01L2924/00
Abstract: 本申请公开了一种芯片、其制作方法及层叠芯片的制作方法。其中,该芯片包括:芯片基板;介质层,设置于芯片基板上,介质层包括第一介质区和环绕在第一介质区外周的第二介质区,且第一介质区的上表面低于第二介质区的上表面;金属层,设置于第一介质区并贯穿介质层,且金属层与芯片基板连接。在上述芯片中通过降低围绕在金属层外周的第一介质区相对于金属层的高度,使得暴露在第一介质层外面的金属层的体积增加。将该芯片与其它芯片进行键合过程中,在键合压力不变的情况下金属层内部的应力会减小,使得金属层的延展程度得以减小,进而提高层叠芯片的可靠性。
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