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公开(公告)号:CN107026090A
公开(公告)日:2017-08-08
申请号:CN201611195926.6
申请日:2016-12-22
Applicant: 台湾积体电路制造股份有限公司
IPC: H01L21/48
CPC classification number: H01L24/09 , H01L24/03 , H01L24/05 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/0655 , H01L25/0657 , H01L25/50 , H01L2224/0345 , H01L2224/03452 , H01L2224/036 , H01L2224/0361 , H01L2224/03618 , H01L2224/03826 , H01L2224/03827 , H01L2224/0391 , H01L2224/0401 , H01L2224/04042 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05541 , H01L2224/05554 , H01L2224/05558 , H01L2224/05567 , H01L2224/05686 , H01L2224/11334 , H01L2224/13007 , H01L2224/13021 , H01L2224/131 , H01L2224/13111 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48137 , H01L2224/48145 , H01L2224/48228 , H01L2224/49109 , H01L2224/49173 , H01L2225/0651 , H01L2924/00014 , H01L2924/01014 , H01L2924/01022 , H01L2924/01072 , H01L2924/01073 , H01L2924/0132 , H01L2924/04941 , H01L2924/04953 , H01L2924/05341 , H01L2924/0535 , H01L2924/05432 , H01L2924/14 , H01L2924/206 , H01L2224/05599 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/053 , H01L2924/01029 , H01L2924/01047 , H01L2924/014 , H01L21/4853
Abstract: 本发明公开了半导体器件及其制造方法。在一些实施例中,该方法包括在半导体器件上方形成接触焊盘。在接触焊盘上方形成钝化材料。所述钝化材料的材料类型和厚度允许穿过所述钝化材料与所述接触焊盘建立电连接。
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公开(公告)号:CN106549004A
公开(公告)日:2017-03-29
申请号:CN201610600014.6
申请日:2016-07-27
Applicant: 台湾积体电路制造股份有限公司
Inventor: 陈宪伟
IPC: H01L23/544 , H01L21/02
CPC classification number: H01L23/544 , H01L21/4853 , H01L21/56 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L21/78 , H01L23/3128 , H01L23/3171 , H01L23/49811 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/19 , H01L24/20 , H01L24/81 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L2221/68359 , H01L2221/68372 , H01L2221/68381 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/5448 , H01L2224/02371 , H01L2224/02373 , H01L2224/03826 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/05022 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05184 , H01L2224/05572 , H01L2224/05647 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/12105 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16227 , H01L2224/19 , H01L2224/20 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/73267 , H01L2224/81005 , H01L2224/8113 , H01L2224/81132 , H01L2224/92244 , H01L2224/94 , H01L2224/97 , H01L2225/0651 , H01L2225/06568 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2924/14 , H01L2924/15311 , H01L2924/19011 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/00014 , H01L2924/00012 , H01L2224/83 , H01L2224/81 , H01L2224/03 , H01L2224/11 , H01L2924/01082 , H01L2924/01046 , H01L2924/01079 , H01L2924/014 , H01L2924/00 , H01L2224/83005 , H01L21/02
Abstract: 本发明提供了具有对准标记的集成电路管芯及其形成方法。方法包括在衬底上形成器件。在衬底和器件上方形成多个接触焊盘。与形成多个接触焊盘同时,在衬底和器件上方形成一个或多个对准标记。
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公开(公告)号:CN103915412A
公开(公告)日:2014-07-09
申请号:CN201310131778.1
申请日:2013-04-16
Applicant: 台湾积体电路制造股份有限公司
IPC: H01L23/528 , H01L23/485
CPC classification number: H01L24/05 , H01L23/3192 , H01L23/528 , H01L24/13 , H01L24/16 , H01L2224/02375 , H01L2224/03826 , H01L2224/03912 , H01L2224/0401 , H01L2224/05005 , H01L2224/05008 , H01L2224/05009 , H01L2224/05022 , H01L2224/05078 , H01L2224/05124 , H01L2224/05166 , H01L2224/05541 , H01L2224/05552 , H01L2224/05572 , H01L2224/05582 , H01L2224/05647 , H01L2224/1146 , H01L2224/1147 , H01L2224/13012 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/16 , H01L2224/16145 , H01L2224/16238 , H01L2224/81815 , H01L2924/00014 , H01L2924/206 , H01L2924/00012 , H01L2924/01047 , H01L2924/01029
Abstract: 本发明公开了一种器件包括衬底,位于衬底上方的金属焊盘,以及与所述金属焊盘电断开的金属迹线。金属焊盘和金属迹线相互齐平。钝化层包括与所述金属焊盘的边缘部分重叠的部分。金属柱覆盖在金属焊盘上方并且与所述金属焊盘电断开。金属迹线具有与所述金属柱重叠的部分。本发明还公开了一种用于集成电路的金属布线结构。
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公开(公告)号:CN102270610B
公开(公告)日:2015-02-18
申请号:CN201010546170.1
申请日:2010-11-10
Applicant: 台湾积体电路制造股份有限公司
IPC: H01L23/00 , H01L23/488 , H01L23/498
CPC classification number: H01L21/7688 , C23C14/34 , C25D5/022 , C25D7/00 , H01L21/76879 , H01L21/76883 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/83 , H01L25/0657 , H01L2224/0361 , H01L2224/03826 , H01L2224/03831 , H01L2224/03912 , H01L2224/0401 , H01L2224/05166 , H01L2224/05181 , H01L2224/05572 , H01L2224/05647 , H01L2224/10126 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/11622 , H01L2224/13147 , H01L2224/1354 , H01L2224/13565 , H01L2224/16148 , H01L2224/16225 , H01L2224/16227 , H01L2224/81024 , H01L2224/81193 , H01L2224/81447 , H01L2224/81815 , H01L2224/81911 , H01L2225/06513 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00 , H01L2224/05552
Abstract: 本发明提供一种集成电路装置及封装组件,该集成电路装置包括:一半导体基材;一凸块下金属层,形成于该半导体基材上;一导电柱体,形成于该凸块下金属层上,且具有一顶面及一侧壁表面,其中该侧壁表面具有一邻近该顶面的第一部分及一邻近该凸块下金属层的第二部分;一非金属保护结构,形成于该导电柱体的该侧壁表面的第二部分上;以及一金属盖层,形成于该顶面上并延伸至该导电柱体的该侧壁表面的第一部分上。本发明中,一非金属侧壁间隔物于铜柱侧壁的下部部分上,及一金属顶盖于铜柱的顶面及侧壁的上部部分上。金属顶盖为在非金属侧壁间隔物形成后,由无电电镀或浸镀技术形成。本发明可减少凸块崩塌的机率并增加封装体的可靠度表现。
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公开(公告)号:CN103985667A
公开(公告)日:2014-08-13
申请号:CN201310556722.0
申请日:2013-11-11
Applicant: 财团法人交大思源基金会
IPC: H01L21/768 , H01L23/528
CPC classification number: H01L24/05 , H01L23/49866 , H01L23/53228 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/83 , H01L2224/03826 , H01L2224/0401 , H01L2224/04026 , H01L2224/05568 , H01L2224/05666 , H01L2224/11462 , H01L2224/13005 , H01L2224/13023 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13169 , H01L2224/16145 , H01L2224/27462 , H01L2224/29005 , H01L2224/29023 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/29169 , H01L2224/32145 , H01L2224/75272 , H01L2224/75704 , H01L2224/75705 , H01L2224/81011 , H01L2224/8109 , H01L2224/81097 , H01L2224/81193 , H01L2224/81203 , H01L2224/81208 , H01L2224/8121 , H01L2224/8183 , H01L2224/81895 , H01L2224/83011 , H01L2224/8309 , H01L2224/83097 , H01L2224/83193 , H01L2224/83203 , H01L2224/83208 , H01L2224/8321 , H01L2224/8383 , H01L2224/83895 , H01L2224/94 , H01L2224/83 , H01L2924/00014 , H01L2924/00012 , H01L2224/81
Abstract: 本发明是有关于一种用以电性连接一第一基板及一第二基板的电性连接结构及其制备方法,其中制备方法包括:(A)提供一第一基板及一第二基板,其中第一基板上设有一第一铜膜,第二基板上设有一第一金属膜,第一铜膜的一第一接合面为一含(111)面的接合面,且该第一金属膜具有一第二接合面;以及(B)将第一铜膜及第一金属膜相互接合以形成接点,其中第一铜膜的第一接合面与第一金属膜的第二接合面相互对应。
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公开(公告)号:CN107230671A
公开(公告)日:2017-10-03
申请号:CN201710177252.5
申请日:2017-03-23
Applicant: 辛纳普蒂克斯日本合同会社
IPC: H01L23/52 , H01L23/528 , H01L23/58
CPC classification number: H01L23/585 , H01L21/78 , H01L22/32 , H01L23/4827 , H01L23/485 , H01L23/564 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/02141 , H01L2224/0215 , H01L2224/02181 , H01L2224/0219 , H01L2224/02251 , H01L2224/0226 , H01L2224/03826 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05082 , H01L2224/05096 , H01L2224/05124 , H01L2224/1146 , H01L2224/1147 , H01L2224/13144 , H01L2924/04941 , H01L23/52 , H01L23/5283
Abstract: 即便到达半导体电路的内部的导电性切片从切割端面露出,也不会使保护环的防湿性能恶化。一种半导体集成电路芯片,在半导体基板的上方具有多层布线结构的半导体电路、包围半导体电路的保护环、连接于所述多层布线结构的最上层布线并在表面露出的外部连接端子,其中,规定的外部连接端子(17_i)在保护环的内侧经由导电性的通孔(18)与规定的布线导通,在保护环的外侧经由导电性的通孔(19)与导电性切片(6)导通。导电性切片是测试用引出布线的切片,由于切割而使其切断面露出。在跨过保护环的外部连接端子的一方连接有导电性切片,在另一方连接有保护环内的最上层布线,因此在保护环中在中途不需要切口。
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公开(公告)号:CN104733418A
公开(公告)日:2015-06-24
申请号:CN201410806694.8
申请日:2014-12-22
Applicant: 恩智浦有限公司
Inventor: 约翰内斯·威尔赫尔姆斯·范里克瓦塞尔 , 埃米尔·德·布鲁因
IPC: H01L23/488 , H01L21/60
CPC classification number: H01L24/29 , H01L23/4827 , H01L23/66 , H01L24/03 , H01L24/05 , H01L24/27 , H01L24/32 , H01L24/83 , H01L2223/6644 , H01L2224/03825 , H01L2224/03826 , H01L2224/05026 , H01L2224/0508 , H01L2224/05082 , H01L2224/05083 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05644 , H01L2224/2745 , H01L2224/2746 , H01L2224/27464 , H01L2224/29084 , H01L2224/29111 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/32245 , H01L2224/32502 , H01L2224/83203 , H01L2224/83207 , H01L2224/83444 , H01L2224/83805 , H01L2924/01028 , H01L2924/01047 , H01L2924/01079 , H01L2924/014 , H01L2924/1421 , H01L2924/15747 , H01L2924/00014 , H01L2924/0105 , H01L2924/01014
Abstract: 一种管芯,包括半导体材料本体,所述本体被配置为接收焊料层用于芯片键合所述管芯到基板,其中管芯包括在本体的表面上的接口层用于接收焊料层,接口层具有多个不同金属的子层。
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公开(公告)号:CN108573947A
公开(公告)日:2018-09-25
申请号:CN201810178281.8
申请日:2018-03-05
Applicant: 精工半导体有限公司
IPC: H01L23/498 , H01L21/48
CPC classification number: H01L24/05 , H01L21/02057 , H01L21/0214 , H01L21/0217 , H01L21/02266 , H01L21/02271 , H01L21/31105 , H01L21/31116 , H01L21/78 , H01L23/291 , H01L23/3171 , H01L23/3192 , H01L24/03 , H01L24/94 , H01L2224/02215 , H01L2224/03011 , H01L2224/03019 , H01L2224/0382 , H01L2224/03826 , H01L2224/0391 , H01L2224/04042 , H01L2224/05022 , H01L2224/05548 , H01L2224/05624 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/85205 , H01L2224/85375 , H01L2924/04941 , H01L2924/05042 , H01L2924/00014 , H01L2924/00012 , H01L23/49894 , H01L21/4846
Abstract: 本发明提供半导体装置,半导体装置(100)具有:基板(101);层叠体(103),其设置在基板的一个主面(101a)侧且包含铝合金布线(102)和包围该铝合金布线(102)绝缘膜(107);和覆盖层叠体(103)的氮化硅膜(104),在上述氮化硅膜和上述绝缘膜上,在与上述铝合金布线(102)的焊接部分重叠的位置设置有开口部(105),在铝合金布线的表面中的从开口部(105)露出的部分附着包含含有硅和氮的反溅射残渣的堆积物而形成有覆膜(106)。该半导体装置能够防止铝合金布线中的作为焊盘露出的部分由于水分而发生腐蚀(电化腐蚀)。
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公开(公告)号:CN108573944A
公开(公告)日:2018-09-25
申请号:CN201810200156.2
申请日:2018-03-12
Applicant: 精工半导体有限公司
IPC: H01L23/485 , H01L21/48
CPC classification number: H01L24/05 , H01L21/02107 , H01L23/3192 , H01L23/562 , H01L24/03 , H01L2224/02123 , H01L2224/02166 , H01L2224/02251 , H01L2224/02255 , H01L2224/0226 , H01L2224/03011 , H01L2224/03019 , H01L2224/03614 , H01L2224/0362 , H01L2224/03826 , H01L2224/0391 , H01L2224/04042 , H01L2224/05008 , H01L2224/05124 , H01L2224/05624 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/85205 , H01L2224/85375 , H01L2924/04941 , H01L2924/05042 , H01L2924/05442 , H01L2924/3512 , H01L23/485 , H01L21/4846
Abstract: 本发明提供一种半导体装置及其制造方法,半导体装置(10)具有:布线层(5),其包含设置于基板(1)上的包含铝或铝合金的布线膜(6)和设置于布线膜(6)上的氮化钛膜(7);保护层(9),其覆盖布线层(5)的上表面(5a)和侧面(5b);和焊盘部(8),其是贯通保护层(9)和氮化钛膜(7)且布线膜(6)露出而成的,保护层(9)是从布线层(5)侧依次层叠第1氮化硅膜(41)、氧化膜(3)和第2氮化硅膜(42)而成的。不易产生包含氮化钛的防反射膜的腐蚀,能够利用一次光刻工序对焊盘部进行开口。
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公开(公告)号:CN103985667B
公开(公告)日:2017-03-29
申请号:CN201310556722.0
申请日:2013-11-11
Applicant: 财团法人交大思源基金会
IPC: H01L21/768 , H01L23/528
CPC classification number: H01L24/05 , H01L23/49866 , H01L23/53228 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/83 , H01L2224/03826 , H01L2224/0401 , H01L2224/04026 , H01L2224/05568 , H01L2224/05666 , H01L2224/11462 , H01L2224/13005 , H01L2224/13023 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13169 , H01L2224/16145 , H01L2224/27462 , H01L2224/29005 , H01L2224/29023 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/29169 , H01L2224/32145 , H01L2224/75272 , H01L2224/75704 , H01L2224/75705 , H01L2224/81011 , H01L2224/8109 , H01L2224/81097 , H01L2224/81193 , H01L2224/81203 , H01L2224/81208 , H01L2224/8121 , H01L2224/8183 , H01L2224/81895 , H01L2224/83011 , H01L2224/8309 , H01L2224/83097 , H01L2224/83193 , H01L2224/83203 , H01L2224/83208 , H01L2224/8321 , H01L2224/8383 , H01L2224/83895 , H01L2224/94 , H01L2224/83 , H01L2924/00014 , H01L2924/00012 , H01L2224/81
Abstract: 本发明是有关于一种用以电性连接一第一基板及一第二基板的电性连接结构及其制备方法,其中制备方法包括:(A)提供一第一基板及一第二基板,其中第一基板上设有一第一铜膜,第二基板上设有一第一金属膜,第一铜膜的一第一接合面为一含(111)面的接合面,且该第一金属膜具有一第二接合面;以及(B)将第一铜膜及第一金属膜相互接合以形成接点,其中第一铜膜的第一接合面与第一金属膜的第二接合面相互对应。
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