Patent search cpc:"H01L2224/48011" Page 1

1.

发明授权
半导体装置用接合线有权转让

公开(公告)号：CN101828255B

公开(公告)日：2011-11-09

申请号：CN200880112031.9

申请日：2008-12-03

Applicant: 新日铁高新材料株式会社 , 日铁新材料股份有限公司

Inventor： 宇野智裕 , 木村圭一 , 山田隆

IPC: H01L21/60 , C22C5/02 , C22C5/04 , C22C5/06 , C22C9/00

CPC classification number: C22C5/02 , B23K35/0222 , B23K35/302 , C22C5/04 , C22C5/06 , C22C9/00 , C22C9/01 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/45683 , H01L2224/48011 , H01L2224/48247 , H01L2224/48465 , H01L2224/48471 , H01L2224/48486 , H01L2224/4851 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48839 , H01L2224/48844 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01203 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/3025 , H01L2924/01004 , H01L2924/01001 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00015 , H01L2924/01202 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/20652 , H01L2924/20653 , H01L2924/20654 , H01L2924/20655 , H01L2924/20656 , H01L2924/20658 , H01L2224/48227 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/00014 , H01L2924/0104 , H01L2924/00013 , H01L2924/01049 , H01L2924/01006

Abstract: 本发明的目的是提供可以降低颈部的损伤，并且在环路的直线性、环路高度的稳定性、接合线的接合形状的稳定化方面优异的也适应于低环路化、细线化、窄间距化、三维组装等的半导体组装技术的高功能的接合线。本发明的半导体装置用接合线，是具有由导电性金属形成的芯材和在所述芯材上的以与芯材不同的面心立方晶的金属为主成分的表皮层的接合线，其特征在于，在所述表皮层的表面中的纵向的晶体取向之中，所占的比例为50％以上。

2.

发明公开
半导体装置用接合线和线接合方法有权转让

公开(公告)号：CN101689517A

公开(公告)日：2010-03-31

申请号：CN200880023088.1

申请日：2008-07-24

Applicant: 新日铁高新材料株式会社 , 株式会社日铁微金属

Inventor： 宇野智裕 , 木村圭一 , 寺嶋晋一 , 山田隆 , 西林景仁

IPC: H01L21/60 , H01B5/02

CPC classification number: H01L24/85 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43847 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2224/45669 , H01L2224/45671 , H01L2224/45673 , H01L2224/4568 , H01L2224/45684 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/4845 , H01L2224/48463 , H01L2224/48472 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48664 , H01L2224/48724 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/78251 , H01L2224/78301 , H01L2224/85045 , H01L2224/85048 , H01L2224/85065 , H01L2224/85075 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/859 , H01L2924/00011 , H01L2924/00015 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01058 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01105 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2924/15747 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/3025 , H01L2924/3861 , H01L2924/01001 , H01L2924/01203 , H01L2924/01034 , H01L2924/01081 , H01L2924/20645 , H01L2924/20652 , H01L2924/20653 , H01L2924/00014 , H01L2924/20108 , H01L2224/45657 , H01L2224/45666 , H01L2924/01008 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/2076 , H01L2924/2065 , H01L2924/20651 , H01L2924/20654 , H01L2924/00 , H01L2224/45124 , H01L2924/013 , H01L2924/20751 , H01L2924/2075 , H01L2924/00013 , H01L2924/01049

Abstract: 本发明的目的是提供材料费廉价且球接合性、热循环试验或软熔试验的可靠性优异、保管寿命也良好的也适应于窄间距用细线化的铜系接合线。本发明的半导体装置用接合线是具有以铜为主成分的芯材、和设置在所述芯材上的含有成分和组成的某一方或两方与所述芯材不同的金属M和铜的外层的接合线，其特征在于，所述外层的厚度为0.021～0.12μm。

3.

发明公开
高频封装件失效

公开(公告)号：CN101578697A

公开(公告)日：2009-11-11

申请号：CN200880001752.2

申请日：2008-02-26

Applicant: 三菱电机株式会社

Inventor： 八十冈兴祐

IPC: H01L21/60 , H01L23/02 , H01L23/12 , H01P1/00 , H01P5/02

CPC classification number: H01L23/043 , H01L23/49822 , H01L23/552 , H01L23/66 , H01L24/45 , H01L24/48 , H01L2223/6611 , H01L2223/6627 , H01L2224/45144 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/48235 , H01L2224/484 , H01L2224/48599 , H01L2924/00014 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/1423 , H01L2924/15153 , H01L2924/1517 , H01L2924/15192 , H01L2924/16152 , H01L2924/16195 , H01L2924/1903 , H01L2924/19032 , H01L2924/19107 , H01L2924/3025 , H01P1/00 , H01L2224/85399 , H01L2224/05599

Abstract: 一种高频封装件，包括：高频器件(2)、在表层上装载有高频器件(2)的多层介质基板(20)、以及作为覆盖该多层介质基板的表层的一部分及高频器件(2)的电磁屏蔽部件的密封环(3)及盖板(4)，对内部导体焊盘(5)，设置具有无用波的波长的近似1/4长度的前端开放线路(50)。由于在腔室空间内传播的无用辐射与连线耦合，通过多层介质基板内层的偏置线向外部辐射，可以减少与连线的耦合量，可以降低向外部辐射的无用辐射量。

4.

发明公开
包含扩频器件的芯片组件的装置和方法失效转让

公开(公告)号：CN101562176A

公开(公告)日：2009-10-21

申请号：CN200910129937.8

申请日：2009-04-10

Applicant: 塞拉单片机有限公司

Inventor： B·Y·劳 , W·W·陈

IPC: H01L25/00 , H01L23/48 , H01L23/482 , H01L21/60 , H04B1/69

CPC classification number: H01L23/66 , H01L23/3107 , H01L23/49524 , H01L23/49531 , H01L23/642 , H01L24/48 , H01L24/97 , H01L25/16 , H01L2224/16225 , H01L2224/16265 , H01L2224/32245 , H01L2224/48011 , H01L2224/48091 , H01L2224/48195 , H01L2224/48227 , H01L2224/48247 , H01L2224/73253 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/09701 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/19041 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H01L2224/81 , H01L2224/83 , H01L2224/85 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207

Abstract: 一种芯片组件包括芯片、引脚座、中间层、扩频器件和焊区。该芯片具有触点。中间层被放置在芯片和引脚座之间。扩频器件至少具有导电层和介电层。该导电层有导电迹线。扩频器件与芯片侧面相邻，并覆盖引脚座。焊区与引脚座的侧面相邻。触点与导电迹线相连。导电迹线与焊区相连。扩频器件被配置为减少阻抗不连续性，从而由扩频器件产生的阻抗不连续性小于由键合线产生的阻抗不连续性，其中每个键合线的长度大于或大致等于触点和焊区之间的距离。

5.

发明公开
半导体器件和电子设备无效

公开(公告)号：CN101515579A

公开(公告)日：2009-08-26

申请号：CN200910134043.8

申请日：2003-04-28

Applicant: 株式会社瑞萨科技

Inventor： 団野忠敏 , 土屋勉

IPC: H01L23/50 , H01L23/488 , H01L23/482 , H01L23/31

CPC classification number: H01L24/49 , H01L23/3107 , H01L23/49503 , H01L23/49548 , H01L23/50 , H01L23/66 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/05554 , H01L2224/16245 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48011 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/484 , H01L2224/48599 , H01L2224/4911 , H01L2224/49171 , H01L2224/73265 , H01L2224/92247 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19043 , H01L2924/19107 , H01L2924/20752 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/351 , H01L2924/00014 , H01L2924/20645 , H01L2924/00 , H01L2924/00012

Abstract: 一种高频功率模块，其安装在便携电话中，并包括包含用于对极弱信号进行放大的低噪声放大器的高频单元模拟信号处理IC。半导体器件包括，由绝缘树脂制成的密封体，延伸在密封体内部和外部的引线，设置在密封体内部且其主表面上具有半导体元件安装部分和导线连接区域的接头片，固定到半导体安装部分并在暴露的主表面上具有电极终端的半导体元件，连接半导体元件的电极终端与引线的导线，和连接半导体元件的电极终端与接头片导线连接部分的导线。通过单片电路的方式在半导体元件中形成电路且该电路由多个电路部件组成。在指定电路部件(低噪声放大器)中，半导体元件的电极终端中的所有接地电极终端不通过导线连接到接头片，而通过导线与引线连接。

6.

发明公开
半导体器件和电子设备失效转让

公开(公告)号：CN101093823A

公开(公告)日：2007-12-26

申请号：CN200710127346.8

申请日：2003-04-28

Applicant: 株式会社瑞萨科技

Inventor： 団野忠敏 , 土屋勉

IPC: H01L23/50 , H01L23/488 , H01L23/495 , H01L23/31

CPC classification number: H01L24/49 , H01L23/3107 , H01L23/49503 , H01L23/49548 , H01L23/50 , H01L23/66 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2224/05554 , H01L2224/16245 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48011 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/484 , H01L2224/48599 , H01L2224/4911 , H01L2224/49171 , H01L2224/73265 , H01L2224/92247 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19043 , H01L2924/19107 , H01L2924/20752 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/351 , H01L2924/00014 , H01L2924/20645 , H01L2924/00 , H01L2924/00012

Abstract: 一种高频功率模块，其安装在便携电话中，并包括包含用于对极弱信号进行放大的低噪声放大器的高频单元模拟信号处理IC。半导体器件包括，由绝缘树脂制成的密封体，延伸在密封体内部和外部的引线，设置在密封体内部且其主表面上具有半导体元件安装部分和导线连接区域的接头片，固定到半导体安装部分并在暴露的主表面上具有电极终端的半导体元件，连接半导体元件的电极终端与引线的导线，以及连接半导体元件的电极终端与接头片导线连接部分的导线。通过单片电路的方式在半导体元件中形成电路且该电路由多个电路部件组成。在指定电路部件(低噪声放大器)中，半导体元件的电极终端中的所有接地电极终端不通过导线连接到接头片，而通过导线与引线连接。

7.

发明授权
半导体器件失效转让

公开(公告)号：CN1332440C

公开(公告)日：2007-08-15

申请号：CN200410088027.7

申请日：2004-10-29

Applicant: 富士通株式会社

Inventor： 十和人 , 久保田义浩 , 浅田宪治 , 细山田澄和

IPC: H01L23/00

CPC classification number: H01L23/66 , H01L23/13 , H01L23/49838 , H01L23/552 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2223/6627 , H01L2224/451 , H01L2224/48011 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48465 , H01L2224/48471 , H01L2224/48475 , H01L2224/4912 , H01L2224/49171 , H01L2224/49175 , H01L2224/85051 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/15311 , H01L2924/15747 , H01L2924/181 , H01L2924/19011 , H01L2924/1903 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012

Abstract: 在一种半导体器件中，在减少接合线长度的同时，当将高密度半导体元件安装于低成本的衬底上时，接合线能够彼此平行地应用于高速信号线路的电极。在衬底(2)上安装阻抗匹配衬底(6)，其具有与半导体元件(4)的电路阻抗匹配的布线。多条第一金属线(12)连接于半导体元件(2)的第一电极(4a)与衬底的电极(2a)之间。多条第二金属线(14)连接于半导体元件(2)的第二电极(4b)与阻抗匹配衬底(6)的第一电极(6a)之间。多条第三金属线(16)连接于阻抗匹配衬底(6)的第二电极(6b)与衬底(2)的电极(2a)之间。第二金属线(14)彼此平行地延伸，并且第三金属线(16)也彼此平行地延伸。