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公开(公告)号:CN101924088A
公开(公告)日:2010-12-22
申请号:CN201010141707.6
申请日:2010-03-29
Applicant: 台湾积体电路制造股份有限公司
IPC: H01L23/485
CPC classification number: H01L24/05 , H01L24/12 , H01L24/16 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/05572 , H01L2224/0558 , H01L2224/056 , H01L2224/13023 , H01L2224/131 , H01L2224/29111 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/05042 , H01L2924/10253 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/00014 , H01L2924/00 , H01L2224/05552
Abstract: 本发明为一种集成电路结构,包含半导体基板、聚亚酰胺层、凸块下金属层、第一焊接凸块以及第二焊接凸块,其中聚亚酰胺层位于半导体基板之上;凸块下金属层包含第一区块与第二区块,其中第一区块位于聚亚酰胺层之上,第二区块与聚亚酰胺层位于同一平面;第一焊接凸块与第二焊接凸块形成于聚亚酰胺层之上,且第一焊接凸块与第二焊接凸块两者的间距不超过150微米,其中凸块下金属层的第一宽度为前述间距的一半再加上一大于5微米的长度。
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公开(公告)号:CN101887869A
公开(公告)日:2010-11-17
申请号:CN200910253110.8
申请日:2009-12-01
Applicant: 日月光半导体制造股份有限公司
IPC: H01L23/12 , H01L23/498 , H01L21/48
CPC classification number: H01L23/49827 , H01L21/486 , H01L21/6835 , H01L23/3121 , H01L23/498 , H01L24/12 , H01L24/16 , H01L24/28 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2221/68345 , H01L2224/13099 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/29111 , H01L2224/2919 , H01L2224/32057 , H01L2224/32225 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/48599 , H01L2224/48699 , H01L2224/73265 , H01L2224/83385 , H01L2224/85439 , H01L2224/85444 , H01L2224/85455 , H01L2224/85664 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01059 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/14 , H01L2924/157 , H01L2924/181 , H01L2924/00014 , H01L2924/0665 , H01L2924/00012 , H01L2924/00
Abstract: 一种单层金属层基板,包括一图案化基底材(patterned base)、配置于图案化基底材上方的一图案化金属层(patterned metal layer)、和一第一表面处理层(firstsurface finish layer)。其中,图案化金属层具有一上表面和一下表面。图案化基底材至少具有数个开口,以暴露出图案化金属层的部分下表面,而形成下方对外电性连接的数个第一接点。而部分图案化金属层的上表面形成上方对外电性连接的数个第二接点。第一表面处理层则配置于该些第二接点的任一或多者的表面上,且第一表面处理层的宽度大于下方第二接点的宽度。应用此基板结构于一封装件时,所设置的晶粒与第二接点电性连接,并以一胶体覆盖图案化基底材、图案化金属层和晶粒。
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公开(公告)号:CN101853792A
公开(公告)日:2010-10-06
申请号:CN201010139922.2
申请日:2010-03-23
Applicant: 索尼公司
CPC classification number: H01L27/14636 , H01L21/486 , H01L23/49827 , H01L24/83 , H01L27/1464 , H01L27/1469 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/00 , H01L2924/01047 , H01L2924/01049 , H01L2924/01079 , H01L2924/01083 , H01L2224/13111 , H01L2924/00012 , H01L2224/13109 , H01L2924/00014
Abstract: 本发明涉及半导体器件的制造方法和半导体器件。半导体器件包括:半导体器件的部件衬底;设置在部件衬底的一个表面上的电极垫盘;对部件衬底进行加强的支撑板材料;在支撑板材料中形成的过孔;充填在过孔中的导电材料;以及被夹置在电极垫盘和导电材料之间并将部件衬底和支撑板材料接合的接合构件。
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公开(公告)号:CN101834166A
公开(公告)日:2010-09-15
申请号:CN200910133612.7
申请日:2009-03-31
Applicant: ASAT有限公司
CPC classification number: H01L21/4832 , H01L23/3107 , H01L23/49503 , H01L23/49541 , H01L23/49582 , H01L24/28 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2224/29144 , H01L2224/2919 , H01L2224/29191 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48639 , H01L2224/48644 , H01L2224/48655 , H01L2224/48664 , H01L2224/48739 , H01L2224/48744 , H01L2224/48755 , H01L2224/48764 , H01L2224/48839 , H01L2224/48844 , H01L2224/48855 , H01L2224/48864 , H01L2224/49 , H01L2224/73265 , H01L2224/83101 , H01L2224/8388 , H01L2224/85439 , H01L2224/85444 , H01L2224/85455 , H01L2224/85464 , H01L2224/92 , H01L2224/92247 , H01L2224/97 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/181 , H01L2924/18165 , H01L2924/19041 , H01L2924/19043 , H01L2924/00014 , H01L2924/0715 , H01L2924/00 , H01L2924/07025 , H01L2224/85 , H01L2224/83 , H01L2224/29111 , H01L2924/0665 , H01L2924/0695 , H01L2924/00012
Abstract: 本发明提供了一种具有支架触点以及管芯附垫的无引脚集成电路封装,该无引脚集成电路(IC)封装包括:安装到管芯连接焊盘上的IC芯片以及电气地连接到IC芯片的多个电触点。IC芯片、电触点和管芯连接焊盘都由模塑材料所覆盖,并且电触点和管芯连接焊盘的一部分从模塑材料的底面凸出。
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公开(公告)号:CN101794738A
公开(公告)日:2010-08-04
申请号:CN201010003988.9
申请日:2010-01-15
Applicant: 索尼公司
CPC classification number: H01L24/12 , H01L21/563 , H01L21/565 , H01L23/3128 , H01L23/49811 , H01L23/49838 , H01L24/16 , H01L24/17 , H01L24/28 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/83 , H01L25/03 , H01L25/0657 , H01L2224/0401 , H01L2224/0558 , H01L2224/05624 , H01L2224/1132 , H01L2224/1134 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13166 , H01L2224/16145 , H01L2224/16225 , H01L2224/26145 , H01L2224/26175 , H01L2224/27013 , H01L2224/29111 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/73203 , H01L2224/73204 , H01L2224/73215 , H01L2224/73253 , H01L2224/73265 , H01L2224/81121 , H01L2224/81193 , H01L2224/81801 , H01L2224/83051 , H01L2224/83101 , H01L2224/83192 , H01L2224/838 , H01L2224/92125 , H01L2225/0651 , H01L2225/06513 , H01L2225/06582 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/15311 , H01L2924/1579 , H01L2924/181 , H01L2924/19107 , H01L2924/30105 , H01L2224/13099 , H01L2924/00 , H01L2924/00012 , H01L2224/45099
Abstract: 本发明提供一种半导体装置及其制造方法。半导体装置包括:安装体;半导体芯片,经由突出的连接端子安装在安装体上;以及填充树脂,填充在安装体与半导体芯片之间以密封连接端子,填充树脂收纳在半导体芯片内侧从而不会从限定半导体芯片的外周边部分的四个边部中的至少一个边部伸出。
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公开(公告)号:CN101783304A
公开(公告)日:2010-07-21
申请号:CN201010001460.8
申请日:2006-08-08
Applicant: 株式会社日立制作所
CPC classification number: H05K3/3463 , B23K35/262 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/73 , H01L24/83 , H01L2224/0401 , H01L2224/04026 , H01L2224/16 , H01L2224/29101 , H01L2224/29111 , H01L2224/29144 , H01L2224/29211 , H01L2224/29311 , H01L2224/32225 , H01L2224/32245 , H01L2224/32507 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2224/83801 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/13055 , H01L2924/15311 , H01L2924/181 , H01L2924/351 , H05K3/244 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/01016 , H01L2924/01028 , H01L2924/01032 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
Abstract: 本发明提供一种具有半导体元件、与所述半导体元件连接的被连接材料的半导体装置的制造方法,其特征在于,所述制造方法包括以下工序:在所述半导体元件和表面形成有Ni层的所述被连接材料之间配置包含Cu6Sn5相的Sn-(3~7)Cu钎料的工序;加热所述Sn-(3~7)Cu钎料,使Cu6Sn5化合物析出,由所述析出的Cu6Sn5化合物覆盖所述Ni层的至少一部分的工序。
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公开(公告)号:CN101728288A
公开(公告)日:2010-06-09
申请号:CN200910180727.1
申请日:2009-10-21
Applicant: 先进自动器材有限公司
IPC: H01L21/603 , H01L33/00 , B23K1/00 , B23K1/20 , B23K35/24
CPC classification number: H01L24/83 , H01L24/29 , H01L24/75 , H01L2224/29101 , H01L2224/29111 , H01L2224/29144 , H01L2224/2919 , H01L2224/32506 , H01L2224/83191 , H01L2224/838 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/12041 , H01L2924/157 , H01L2924/15787 , H01L2924/3025 , H01L2924/00 , H01L2924/00014
Abstract: 本发明公开了一种键合包含有焊料层的晶粒的方法,焊料层具有熔点Tm,该方法包含有以下步骤:将键合头加热到键合头设定温度T1,T1高于Tm;将衬底加热到衬底设定温度T2,T2低于Tm;使用键合头拾取晶粒,并朝向温度T1加热晶粒,以便于熔化焊料层;将晶粒的焊料层按压在衬底上,以便于键合晶粒到衬底上;其后将键合头与晶粒分开,以便于焊料层朝向温度T2冷却并固化。
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公开(公告)号:CN101243552B
公开(公告)日:2010-04-21
申请号:CN200680029369.9
申请日:2006-06-07
IPC: H01L23/538
CPC classification number: H01L23/49855 , G06K19/07749 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/83 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05568 , H01L2224/05572 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/1134 , H01L2224/13144 , H01L2224/16225 , H01L2224/29111 , H01L2224/2919 , H01L2224/29298 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73204 , H01L2224/81143 , H01L2224/81191 , H01L2224/83101 , H01L2224/838 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/0781 , H01L2924/07811 , H01L2924/09701 , H01L2924/14 , H01L2924/1579 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/00015 , H01L2924/00014 , H01L2924/00 , H01L2924/3512
Abstract: 一种射频识别设备(RFID),包括不导电第一基板、安装到载体基板且具有至少一个导电端子的集成电路、以及施加到非一5导电基板且与至少一个导电端子接触的图案化的导电涂层。图案化的导电涂层包括聚合物基质和导电微粒填料,该聚合物基质能够经受至少2%弹性形变而在用作天线的图案化的导电涂层的导电特性中没有显著变化。可以通过将IC 0芯片贴附到具有图案化的导电涂层的基板的表面,并且施加桥接涂层以将IC芯片的端子连接到天线上,来制造该RFID。
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公开(公告)号:CN1977368B
公开(公告)日:2010-04-07
申请号:CN200580021535.6
申请日:2005-05-26
Applicant: 千住金属工业株式会社
Inventor: 上岛稔
CPC classification number: B23K35/262 , B23K35/0244 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2224/29 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29298 , H01L2224/83801 , H01L2924/00013 , H01L2924/01004 , H01L2924/01006 , H01L2924/01015 , H01L2924/01024 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/15747 , H01L2924/00 , H01L2924/01028 , H01L2924/01083 , H01L2924/3512 , H01L2924/00015 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
Abstract: 为了得到在芯片焊接接合电子零件的半导体元件和基板时,尽管是无铅软钎料的颗粒,但产生的空隙仍然少的颗粒,在软钎焊过热时,在Sn为主成分的无铅软钎料合金的表面形成:无色透明的由30~50原子%的O、5~15原子%的P以及余量实质Sn构成的保护膜;以及由10~30原子%的In、40~60原子%的O、5~15原子%的P以及余量实质Sn构成的保护膜,从而得到该颗粒,其厚度为0.05~1mm,形状与基板大致相同。
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公开(公告)号:CN101652847A
公开(公告)日:2010-02-17
申请号:CN200880011580.7
申请日:2008-03-26
Applicant: 国际商业机器公司
IPC: H01L21/60 , H01L23/485 , H01L21/56 , H01L21/68
CPC classification number: H01L24/16 , H01L21/563 , H01L21/6835 , H01L24/11 , H01L24/12 , H01L24/27 , H01L24/28 , H01L24/31 , H01L24/73 , H01L24/81 , H01L24/94 , H01L2221/68377 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/11003 , H01L2224/1131 , H01L2224/11334 , H01L2224/114 , H01L2224/116 , H01L2224/11822 , H01L2224/1308 , H01L2224/13082 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/1357 , H01L2224/136 , H01L2224/16 , H01L2224/16225 , H01L2224/17051 , H01L2224/274 , H01L2224/29111 , H01L2224/73104 , H01L2224/73203 , H01L2224/73204 , H01L2224/81191 , H01L2224/8121 , H01L2224/81815 , H01L2924/0001 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H05K3/3436 , H05K2201/0379 , H05K2201/094 , H05K2201/10234 , H05K2201/10242 , H05K2201/10977 , Y02P70/613 , Y10T29/49165 , H01L2224/45111 , H01L2924/01047 , H01L2224/13099 , H01L2924/01083 , H01L2924/00 , H01L2224/29099 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
Abstract: 一种电学结构及其形成方法。该电器结构包括包含第一导电衬垫的第一衬底,包含第二导电衬垫的第二衬底,以及将第一导电衬垫电学及机械地连接到第二导电衬垫的互连结构。该互连结构包含具有圆柱或球体形状的无焊料金属芯结构,第一焊料结构,以及第二焊料结构。第一焊料结构将无焊料金属芯结构的第一部分电学及机械地连接到第一导电衬垫。第二焊料结构将无焊料金属芯结构的第二部分电学及机械地连接到第二导电衬垫。
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