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公开(公告)号：CN102347284B
公开(公告)日：2015-05-27
申请号：CN201110037676.4
申请日：2011-02-10
Applicant: 台湾积体电路制造股份有限公司
IPC: H01L23/00 , H01L21/60 , H01L23/488
CPC classification number: H01L24/11 , H01L21/4853 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/93 , H01L25/0657 , H01L25/50 , H01L2224/0345 , H01L2224/0346 , H01L2224/0347 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/11416 , H01L2224/11422 , H01L2224/11424 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/118 , H01L2224/1181 , H01L2224/1182 , H01L2224/11822 , H01L2224/11827 , H01L2224/11848 , H01L2224/11849 , H01L2224/119 , H01L2224/13005 , H01L2224/13111 , H01L2224/13144 , H01L2224/13155 , H01L2224/13164 , H01L2224/132 , H01L2224/13211 , H01L2224/13339 , H01L2224/13562 , H01L2224/13584 , H01L2224/13611 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/13664 , H01L2224/1379 , H01L2224/13794 , H01L2224/13809 , H01L2224/13813 , H01L2224/13817 , H01L2224/13818 , H01L2224/1382 , H01L2224/13849 , H01L2224/13855 , H01L2224/13857 , H01L2224/1386 , H01L2224/13866 , H01L2224/16145 , H01L2224/16225 , H01L2224/81193 , H01L2224/81815 , H01L2224/93 , H01L2225/06513 , H01L2924/01012 , H01L2924/01013 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01058 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/04941 , H01L2924/04953 , H01L2924/00014 , H01L2924/01039 , H01L2224/11 , H01L2924/00
Abstract: 本发明一实施例提供一种半导体元件及其形成方法，其中半导体元件的形成方法包括：提供一基底；于该基底上形成一焊料凸块；将一少量元素导入至一区域中，该区域邻接该焊料凸块的一顶表面；以及对该焊料凸块进行一回焊工艺以驱使该少量元素进入该焊料凸块之中。采用本发明的实施例，在公知技术中不适合加进金属凸块中的许多类型的少量元素现可被添加。因此，金属凸块的性质可获显著的提升。
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公开(公告)号：CN102456651A
公开(公告)日：2012-05-16
申请号：CN201110194230.2
申请日：2011-07-08
Applicant: 台湾积体电路制造股份有限公司
IPC: H01L23/488 , H01L21/60
CPC classification number: H01L24/11 , H01L23/562 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0345 , H01L2224/03831 , H01L2224/0401 , H01L2224/05144 , H01L2224/05666 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/11622 , H01L2224/11823 , H01L2224/11825 , H01L2224/11849 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13164 , H01L2224/13565 , H01L2224/1357 , H01L2224/13582 , H01L2224/13583 , H01L2224/13657 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/16237 , H01L2224/81193 , H01L2224/81447 , H01L2224/81815 , H01L2225/06513 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/0539 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/20102 , H01L2924/2075 , H01L2924/20751 , H01L2924/00
Abstract: 本公开提供一种集成电路器件，包括铜柱和叠加在铜柱上的焊料层。形成含钴金属化层以覆盖铜柱和焊料层，然后执行热回流工艺以形成焊接凸块并且驱使钴元素进入焊接凸块中。接下来，执行氧化工艺以在铜柱的侧壁表面上形成钴氧化层。
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公开(公告)号：CN103199027A
公开(公告)日：2013-07-10
申请号：CN201210102112.9
申请日：2012-04-09
Applicant: 台湾积体电路制造股份有限公司
IPC: H01L21/60 , H01L23/488
CPC classification number: H01L23/485 , H01L21/768 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/02166 , H01L2224/0401 , H01L2224/05008 , H01L2224/05022 , H01L2224/05027 , H01L2224/05155 , H01L2224/05164 , H01L2224/05541 , H01L2224/05548 , H01L2224/05552 , H01L2224/05571 , H01L2224/05572 , H01L2224/05583 , H01L2224/05644 , H01L2224/13017 , H01L2224/13022 , H01L2224/13023 , H01L2224/13027 , H01L2224/131 , H01L2924/00014 , H01L2924/00012 , H01L2924/207 , H01L2924/014
Abstract: 一种方法包括在金属焊盘上方形成聚合物层；在聚合物层中形成开口从而暴露出金属焊盘的一部分；以及形成凸块下金属化层(UBM)。该UBM包含延伸至开口内的电连接至金属焊盘的部分。本发明提供了用于集成电路的UBM的形成。
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公开(公告)号：CN102593044A
公开(公告)日：2012-07-18
申请号：CN201110433918.1
申请日：2011-12-21
Applicant: 台湾积体电路制造股份有限公司
IPC: H01L21/768 , H01L21/28
CPC classification number: H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0345 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05572 , H01L2224/05647 , H01L2224/1145 , H01L2224/11452 , H01L2224/1146 , H01L2224/1147 , H01L2224/1181 , H01L2224/11824 , H01L2224/11827 , H01L2224/11849 , H01L2224/1308 , H01L2224/13083 , H01L2224/13109 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13565 , H01L2224/1357 , H01L2224/13583 , H01L2224/13693 , H01L2224/16225 , H01L2224/16227 , H01L2224/81191 , H01L2224/81815 , H01L2224/94 , H01L2924/00014 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/14 , H01L2924/01047 , H01L2924/01024 , H01L2924/01028 , H01L2924/0105 , H01L2924/01079 , H01L2924/04941 , H01L2924/04953 , H01L2924/01073 , H01L2924/01049 , H01L2924/0103 , H01L2924/01025 , H01L2924/01022 , H01L2924/01032 , H01L2924/01078 , H01L2924/01012 , H01L2924/01013 , H01L2924/0104 , H01L2924/01046 , H01L2924/01082 , H01L2924/01029 , H01L2924/01083 , H01L2924/01051 , H01L2224/03 , H01L2224/11 , H01L2924/00012 , H01L2924/00 , H01L2224/05552
Abstract: 本公开涉及金属柱的制造。制造半导体器件的示例性方法包括的步骤有：提供具有接触焊盘的衬底；形成钝化层，其在衬底上方延伸并且在接触焊盘上有开口；在接触焊盘和部分钝化层上形成金属柱；在金属柱上方形成焊接层；以及使金属柱的侧壁与有机化合物发生反应，以在金属柱的侧壁上形成该有机化合物的自组装单层或自组装多层。
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公开(公告)号：CN102347284A
公开(公告)日：2012-02-08
申请号：CN201110037676.4
申请日：2011-02-10
Applicant: 台湾积体电路制造股份有限公司
IPC: H01L23/00 , H01L21/60 , H01L23/488
CPC classification number: H01L24/11 , H01L21/4853 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/93 , H01L25/0657 , H01L25/50 , H01L2224/0345 , H01L2224/0346 , H01L2224/0347 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/11416 , H01L2224/11422 , H01L2224/11424 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/118 , H01L2224/1181 , H01L2224/1182 , H01L2224/11822 , H01L2224/11827 , H01L2224/11848 , H01L2224/11849 , H01L2224/119 , H01L2224/13005 , H01L2224/13111 , H01L2224/13144 , H01L2224/13155 , H01L2224/13164 , H01L2224/132 , H01L2224/13211 , H01L2224/13339 , H01L2224/13562 , H01L2224/13584 , H01L2224/13611 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/13664 , H01L2224/1379 , H01L2224/13794 , H01L2224/13809 , H01L2224/13813 , H01L2224/13817 , H01L2224/13818 , H01L2224/1382 , H01L2224/13849 , H01L2224/13855 , H01L2224/13857 , H01L2224/1386 , H01L2224/13866 , H01L2224/16145 , H01L2224/16225 , H01L2224/81193 , H01L2224/81815 , H01L2224/93 , H01L2225/06513 , H01L2924/01012 , H01L2924/01013 , H01L2924/01025 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01058 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/04941 , H01L2924/04953 , H01L2924/00014 , H01L2924/01039 , H01L2224/11 , H01L2924/00
Abstract: 本发明一实施例提供一种半导体元件及其形成方法，其中半导体元件的形成方法包括：提供一基底；于该基底上形成一焊料凸块；将一少量元素导入至一区域中，该区域邻接该焊料凸块的一顶表面；以及对该焊料凸块进行一回焊工艺以驱使该少量元素进入该焊料凸块之中。采用本发明的实施例，在公知技术中不适合加进金属凸块中的许多类型的少量元素现可被添加。因此，金属凸块的性质可获显著的提升。
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Patent Agency Ranking
公开(公告)号：CN102315182A
公开(公告)日：2012-01-11
申请号：CN201010621954.6
申请日：2010-12-29
Applicant: 台湾积体电路制造股份有限公司
CPC classification number: H01L24/13 , H01L21/563 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/16 , H01L24/73 , H01L24/81 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/03464 , H01L2224/0361 , H01L2224/03831 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05572 , H01L2224/05647 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11622 , H01L2224/11831 , H01L2224/11849 , H01L2224/11901 , H01L2224/13007 , H01L2224/13017 , H01L2224/13022 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/131 , H01L2224/13147 , H01L2224/13155 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/73204 , H01L2224/81801 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01072 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/3512 , H01L2224/05552 , H01L2924/00 , H01L2224/1146
Abstract: 本发明实施例公开了一种半导体芯片及其制造方法，其中半导体芯片包含一导电凸块位于一半导体芯片上。提供一基材，其上具有一连接焊盘，该连接焊盘上具有一凸块下金属层。铜柱具有一顶面及凹型侧壁，该顶面具有一第一宽度。一镍层，具有一顶面及一底面，位于该铜柱的顶面上。该镍层的底面具有一第二宽度。第二宽度对第一宽度的比例为约0.93至1.07。一焊料位于该盖层的该顶面上。本发明可减少导电柱与焊料之间的界面因应力而产生的破裂。
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公开(公告)号：CN107256853A
公开(公告)日：2017-10-17
申请号：CN201710272117.9
申请日：2012-02-09
Applicant: 台湾积体电路制造股份有限公司
IPC: H01L23/522 , H01L23/488 , H01L23/498 , H01L21/768
CPC classification number: H01L23/291 , H01L23/293 , H01L23/3171 , H01L23/525 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/02313 , H01L2224/02331 , H01L2224/02381 , H01L2224/0239 , H01L2224/03424 , H01L2224/03452 , H01L2224/0346 , H01L2224/03462 , H01L2224/03464 , H01L2224/0391 , H01L2224/0401 , H01L2224/05008 , H01L2224/05111 , H01L2224/05124 , H01L2224/05155 , H01L2224/05164 , H01L2224/05548 , H01L2224/05562 , H01L2224/05567 , H01L2224/05573 , H01L2224/05583 , H01L2224/05611 , H01L2224/05644 , H01L2224/05647 , H01L2224/08503 , H01L2224/11334 , H01L2224/1146 , H01L2224/11849 , H01L2224/13022 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/16237 , H01L2224/16503 , H01L2924/00014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01082 , H01L2924/01083 , H01L2924/01327 , H01L2924/014 , H01L2924/12042 , H01L2924/2064 , H01L2924/00 , H01L2224/05552 , H01L23/5221 , H01L21/76843 , H01L23/488 , H01L23/49811
Abstract: 一种半导体器件包括：导电层，该导电层通过浸镀锡工艺形成于钝化后互连(PPI)结构的表面上；聚合物层，该聚合物层形成于导电层上并且经图案化具有暴露出一部分导电层的开口；以及焊料凸块，该焊料凸块形成于聚合物层的开口中以电连接至PPI结构。本发明提供了钝化后互连结构及其形成方法。
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公开(公告)号：CN102456651B
公开(公告)日：2015-05-13
申请号：CN201110194230.2
申请日：2011-07-08
Applicant: 台湾积体电路制造股份有限公司
IPC: H01L23/488 , H01L21/60
CPC classification number: H01L24/11 , H01L23/562 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0345 , H01L2224/03831 , H01L2224/0401 , H01L2224/05144 , H01L2224/05666 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11464 , H01L2224/11622 , H01L2224/11823 , H01L2224/11825 , H01L2224/11849 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13164 , H01L2224/13565 , H01L2224/1357 , H01L2224/13582 , H01L2224/13583 , H01L2224/13657 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/16237 , H01L2224/81193 , H01L2224/81447 , H01L2224/81815 , H01L2225/06513 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/0539 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/20102 , H01L2924/2075 , H01L2924/20751 , H01L2924/00
Abstract: 本公开提供一种集成电路器件，包括铜柱和叠加在铜柱上的焊料层。形成含钴金属化层以覆盖铜柱和焊料层，然后执行热回流工艺以形成焊接凸块并且驱使钴元素进入焊接凸块中。接下来，执行氧化工艺以在铜柱的侧壁表面上形成钴氧化层。
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公开(公告)号：CN103515251A
公开(公告)日：2014-01-15
申请号：CN201310136202.4
申请日：2013-04-18
Applicant: 台湾积体电路制造股份有限公司
CPC classification number: H01L24/81 , H01L21/56 , H01L23/3107 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L23/49833 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/17 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/13016 , H01L2224/13017 , H01L2224/13018 , H01L2224/13023 , H01L2224/13124 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13582 , H01L2224/13583 , H01L2224/13611 , H01L2224/13644 , H01L2224/13647 , H01L2224/13655 , H01L2224/13657 , H01L2224/13664 , H01L2224/16148 , H01L2224/16225 , H01L2224/16238 , H01L2224/16501 , H01L2224/16505 , H01L2224/32135 , H01L2224/32141 , H01L2224/32145 , H01L2224/81085 , H01L2224/811 , H01L2224/8112 , H01L2224/81121 , H01L2224/81193 , H01L2224/81232 , H01L2224/81355 , H01L2224/81359 , H01L2224/81801 , H01L2224/8192 , H01L2225/06513 , H01L2225/06517 , H01L2225/0652 , H01L2225/1023 , H01L2225/1058 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/15311 , H01L2924/1533 , H01L2924/15331 , H01L2924/181 , H01L2924/1815 , H01L2924/18161 , H01L2924/3841 , H01L2924/00014 , H01L2924/00012 , H01L2924/01005 , H01L2924/01074 , H01L2924/01015 , H01L2924/06 , H01L2924/00
Abstract: 一种方法包括将第一封装元件的第一电连接件与第二封装元件的第二电连接件对准。随着第一电连接件与第二电连接件对准，在第一电连接件和第二电连接件上镀金属层。该金属层将第一电连接件接合到第二电连接件。本发明公开了通过镀层接合封装元件。
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公开(公告)号：CN103094246A
公开(公告)日：2013-05-08
申请号：CN201210028995.3
申请日：2012-02-09
Applicant: 台湾积体电路制造股份有限公司
IPC: H01L23/522 , H01L23/488 , H01L21/768
CPC classification number: H01L23/291 , H01L23/293 , H01L23/3171 , H01L23/525 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/02313 , H01L2224/02331 , H01L2224/02381 , H01L2224/0239 , H01L2224/03424 , H01L2224/03452 , H01L2224/0346 , H01L2224/03462 , H01L2224/03464 , H01L2224/0391 , H01L2224/0401 , H01L2224/05008 , H01L2224/05111 , H01L2224/05124 , H01L2224/05155 , H01L2224/05164 , H01L2224/05548 , H01L2224/05562 , H01L2224/05567 , H01L2224/05573 , H01L2224/05583 , H01L2224/05611 , H01L2224/05644 , H01L2224/05647 , H01L2224/08503 , H01L2224/11334 , H01L2224/1146 , H01L2224/11849 , H01L2224/13022 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/16237 , H01L2224/16503 , H01L2924/00014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/01082 , H01L2924/01083 , H01L2924/01327 , H01L2924/014 , H01L2924/12042 , H01L2924/2064 , H01L2924/00 , H01L2224/05552
Abstract: 一种半导体器件包括：导电层，该导电层通过浸镀锡工艺形成于钝化后互连(PPI)结构的表面上；聚合物层，该聚合物层形成于导电层上并且经图案化具有暴露出一部分导电层的开口；以及焊料凸块，该焊料凸块形成于聚合物层的开口中以电连接至PPI结构。本发明提供了钝化后互连结构及其形成方法。
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