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公开(公告)号：CN100414703C
公开(公告)日：2008-08-27
申请号：CN200410037993.6
申请日：2004-05-14
Applicant: 株式会社瑞萨科技
IPC: H01L25/065 , H01L25/07 , H01L25/18 , H01L21/50
CPC classification number: H01L21/6835 , H01L23/3128 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L29/0657 , H01L2224/05554 , H01L2224/26145 , H01L2224/27013 , H01L2224/29 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49175 , H01L2224/73265 , H01L2224/83051 , H01L2224/83192 , H01L2224/83855 , H01L2224/8388 , H01L2224/92 , H01L2224/92247 , H01L2225/0651 , H01L2225/06555 , H01L2225/06575 , H01L2225/06582 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/0102 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10158 , H01L2924/10253 , H01L2924/14 , H01L2924/1517 , H01L2924/15311 , H01L2924/1579 , H01L2924/181 , H01L2924/3511 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/10155 , H01L2924/3512 , H01L2224/13111 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
Abstract: 一种在安装基底上堆叠多个半导体芯片的半导体器件，其中增强半导体器件的各个芯片的粘附性能，由此增强半导体器件的可靠性。在安装基底上的半导体芯片安装区涂敷由主要具有热固性能的树脂形成的粘结材料。在将半导体芯片安装在粘结材料上之后，通过热处理固化粘结材料。当这些部分自然地冷却至常温时，由于安装基底和半导体芯片之间的α值的差，安装基底等以凸形翘曲。但是，通过引线键合连接焊盘P1和焊盘PA，此后由具有热塑性能的树脂形成的粘结材料层叠到半导体芯片。然后，通过热压键合处理将间隔芯片键合到粘结材料。由此，由于在执行热压键合处理的时候产生的热量，安装基底和半导体芯片变得基本上平坦，由此增强了半导体芯片和间隔芯片的粘着力。
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公开(公告)号：CN101312162B
公开(公告)日：2010-06-02
申请号：CN200810134102.7
申请日：2004-05-14
Applicant: 株式会社瑞萨科技
CPC classification number: H01L21/6835 , H01L23/3128 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L29/0657 , H01L2224/05554 , H01L2224/26145 , H01L2224/27013 , H01L2224/29 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49175 , H01L2224/73265 , H01L2224/83051 , H01L2224/83192 , H01L2224/83855 , H01L2224/8388 , H01L2224/92 , H01L2224/92247 , H01L2225/0651 , H01L2225/06555 , H01L2225/06575 , H01L2225/06582 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/0102 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10158 , H01L2924/10253 , H01L2924/14 , H01L2924/1517 , H01L2924/15311 , H01L2924/1579 , H01L2924/181 , H01L2924/3511 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/10155 , H01L2924/3512 , H01L2224/13111 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
Abstract: 一种在安装基底上堆叠多个半导体芯片的半导体器件的制造方法，其中增强半导体器件的各个芯片的粘附性能，由此增强半导体器件的可靠性。在安装基底上的半导体芯片安装区涂敷由主要具有热固性能的树脂形成的粘结材料。在将半导体芯片安装在粘结材料上之后，通过热处理固化粘结材料。当这些部分自然冷却至常温时，由于安装基底和半导体芯片之间α值的差，安装基底等以凸形翘曲。但通过引线键合连接焊盘P1和焊盘PA，此后由具有热塑性能的树脂形成的粘结材料层叠到半导体芯片。然后通过热压键合处理将间隔芯片键合到粘结材料。由此，由于在执行热压键合处理时产生的热量，安装基底和半导体芯片变得基本平坦，由此增强了半导体芯片和间隔芯片的粘着力。
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公开(公告)号：CN100568473C
公开(公告)日：2009-12-09
申请号：CN200610107888.4
申请日：2006-07-27
Applicant: 株式会社瑞萨科技
IPC: H01L21/50 , H01L21/78 , H01L21/301
CPC classification number: H01L21/82 , H01L21/563 , H01L23/3121 , H01L24/27 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L2221/6834 , H01L2224/16225 , H01L2224/274 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/48465 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83191 , H01L2224/83444 , H01L2224/8385 , H01L2224/92 , H01L2224/92247 , H01L2225/0651 , H01L2225/06517 , H01L2225/06575 , H01L2225/06582 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/0665 , H01L2924/07802 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/15747 , H01L2924/181 , H01L2924/00012 , H01L2924/00 , H01L2924/01007 , H01L2924/01022 , H01L2924/3512 , H01L2224/13111 , H01L2224/45015 , H01L2924/207
Abstract: 将具有以多级层叠芯片的结构的半导体器件制薄。在将聚焦点置于半导体晶片的半导体衬底的内部的情况下，通过照射激光束形成改性区。然后，在通过旋涂方法将液态的接合材料涂覆到半导体晶片的背表面后，使其干燥并形成固体状粘合层。然后，通过使上述改性区成为分割起点，将半导体晶片分割成每个半导体芯片。通过利用背表面的粘合层将该半导体芯片粘贴在其它半导体芯片的主表面上，制造具有以多级层叠芯片的结构的半导体器件。
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Patent Agency Ranking
公开(公告)号：CN101297394B
公开(公告)日：2010-10-13
申请号：CN200680039739.7
申请日：2006-11-09
Applicant: 株式会社瑞萨科技
IPC: H01L21/301 , B23K26/36 , B23K26/40
CPC classification number: H01L22/32 , B23K26/0006 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B23K2103/56 , H01L21/268 , H01L21/304 , H01L21/4853 , H01L21/565 , H01L21/67092 , H01L21/6835 , H01L21/6836 , H01L21/6838 , H01L21/78 , H01L22/12 , H01L22/34 , H01L23/544 , H01L23/562 , H01L24/05 , H01L24/06 , H01L24/48 , H01L24/49 , H01L25/065 , H01L25/0657 , H01L2221/68327 , H01L2221/6834 , H01L2223/5442 , H01L2223/54426 , H01L2223/5446 , H01L2223/5448 , H01L2224/02235 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/48091 , H01L2224/48227 , H01L2224/49175 , H01L2225/0651 , H01L2225/06562 , H01L2225/06582 , H01L2225/06596 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/01029 , H01L2924/01077 , H01L2924/01078 , H01L2924/04941 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 在通过隐形切割来分割半导体晶片1W的情况下，使切断区域CR的测试用焊盘1LBt和对准标线Am靠近切断区域CR的宽度方向的一侧而进行配置，将用于形成改质区域PR的激光束照射到在平面上远离测试用焊盘1LBt和对准标线Am靠近切断区域CR的位置。由此，就能够在采用了隐形切割的半导体晶片的切断处理中降低或者防止切断形状缺陷。
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公开(公告)号：CN101312162A
公开(公告)日：2008-11-26
申请号：CN200810134102.7
申请日：2004-05-14
Applicant: 株式会社瑞萨科技
CPC classification number: H01L21/6835 , H01L23/3128 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L29/0657 , H01L2224/05554 , H01L2224/26145 , H01L2224/27013 , H01L2224/29 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49175 , H01L2224/73265 , H01L2224/83051 , H01L2224/83192 , H01L2224/83855 , H01L2224/8388 , H01L2224/92 , H01L2224/92247 , H01L2225/0651 , H01L2225/06555 , H01L2225/06575 , H01L2225/06582 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/0102 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10158 , H01L2924/10253 , H01L2924/14 , H01L2924/1517 , H01L2924/15311 , H01L2924/1579 , H01L2924/181 , H01L2924/3511 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/10155 , H01L2924/3512 , H01L2224/13111 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
Abstract: 一种在安装基底上堆叠多个半导体芯片的半导体器件的制造方法，其中增强半导体器件的各个芯片的粘附性能，由此增强半导体器件的可靠性。在安装基底上的半导体芯片安装区涂敷由主要具有热固性能的树脂形成的粘结材料。在将半导体芯片安装在粘结材料上之后，通过热处理固化粘结材料。当这些部分自然冷却至常温时，由于安装基底和半导体芯片之间α值的差，安装基底等以凸形翘曲。但通过引线键合连接焊盘P1和焊盘PA，此后由具有热塑性能的树脂形成的粘结材料层叠到半导体芯片。然后通过热压键合处理将间隔芯片键合到粘结材料。由此，由于在执行热压键合处理时产生的热量，安装基底和半导体芯片变得基本平坦，由此增强了半导体芯片和间隔芯片的粘着力。
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公开(公告)号：CN1913113A
公开(公告)日：2007-02-14
申请号：CN200610107888.4
申请日：2006-07-27
Applicant: 株式会社瑞萨科技
IPC: H01L21/50 , H01L21/78 , H01L21/301
CPC classification number: H01L21/82 , H01L21/563 , H01L23/3121 , H01L24/27 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L2221/6834 , H01L2224/16225 , H01L2224/274 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/48465 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/83191 , H01L2224/83444 , H01L2224/8385 , H01L2224/92 , H01L2224/92247 , H01L2225/0651 , H01L2225/06517 , H01L2225/06575 , H01L2225/06582 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/0665 , H01L2924/07802 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/15747 , H01L2924/181 , H01L2924/00012 , H01L2924/00 , H01L2924/01007 , H01L2924/01022 , H01L2924/3512 , H01L2224/13111 , H01L2224/45015 , H01L2924/207
Abstract: 将具有以多级层叠芯片的结构的半导体器件制薄。在将聚焦点置于半导体晶片的半导体衬底的内部的情况下，通过照射激光束形成改性区。然后，在通过旋涂方法将液态的接合材料涂覆到半导体晶片的背表面后，使其干燥并形成固体状粘合层。然后，通过使上述改性区成为分割起点，将半导体晶片分割成每个半导体芯片。通过利用背表面的粘合层将该半导体芯片粘贴在其它半导体芯片的主表面上，制造具有以多级层叠芯片的结构的半导体器件。
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公开(公告)号：CN1574346A
公开(公告)日：2005-02-02
申请号：CN200410037993.6
申请日：2004-05-14
Applicant: 株式会社瑞萨科技
IPC: H01L25/065 , H01L25/07 , H01L25/18 , H01L21/50
CPC classification number: H01L21/6835 , H01L23/3128 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L29/0657 , H01L2224/05554 , H01L2224/26145 , H01L2224/27013 , H01L2224/29 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32014 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49175 , H01L2224/73265 , H01L2224/83051 , H01L2224/83192 , H01L2224/83855 , H01L2224/8388 , H01L2224/92 , H01L2224/92247 , H01L2225/0651 , H01L2225/06555 , H01L2225/06575 , H01L2225/06582 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/0102 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10158 , H01L2924/10253 , H01L2924/14 , H01L2924/1517 , H01L2924/15311 , H01L2924/1579 , H01L2924/181 , H01L2924/3511 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/10155 , H01L2924/3512 , H01L2224/13111 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
Abstract: 一种在安装基底上堆叠多个半导体芯片的半导体器件，其中增强半导体器件的各个芯片的粘附性能，由此增强半导体器件的可靠性。在安装基底上的半导体芯片安装区涂敷由主要具有热固性能的树脂形成的粘结材料。在将半导体芯片安装在粘结材料上之后，通过热处理固化粘结材料。当这些部分自然地冷却至常温时，由于安装基底和半导体芯片之间的α值的差，安装基底等以凸形翘曲。但是，通过引线键合连接焊盘P1和焊盘PA，此后由具有热塑性能的树脂形成的粘结材料层叠到半导体芯片。然后，通过热压键合处理将间隔芯片键合到粘结材料。由此，由于在执行热压键合处理的时候产生的热量，安装基底和半导体芯片变得基本上平坦，由此增强了半导体芯片和间隔芯片的粘着力。
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公开(公告)号：CN101297394A
公开(公告)日：2008-10-29
申请号：CN200680039739.7
申请日：2006-11-09
Applicant: 株式会社瑞萨科技
IPC: H01L21/301 , B23K26/36 , B23K26/40
CPC classification number: H01L22/32 , B23K26/0006 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B23K2103/56 , H01L21/268 , H01L21/304 , H01L21/4853 , H01L21/565 , H01L21/67092 , H01L21/6835 , H01L21/6836 , H01L21/6838 , H01L21/78 , H01L22/12 , H01L22/34 , H01L23/544 , H01L23/562 , H01L24/05 , H01L24/06 , H01L24/48 , H01L24/49 , H01L25/065 , H01L25/0657 , H01L2221/68327 , H01L2221/6834 , H01L2223/5442 , H01L2223/54426 , H01L2223/5446 , H01L2223/5448 , H01L2224/02235 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/48091 , H01L2224/48227 , H01L2224/49175 , H01L2225/0651 , H01L2225/06562 , H01L2225/06582 , H01L2225/06596 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/01029 , H01L2924/01077 , H01L2924/01078 , H01L2924/04941 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 在通过隐形切割来分割半导体晶片1W的情况下，使切断区域CR的测试用焊盘1LBt和对准标线Am靠近切断区域CR的宽度方向的一侧而进行配置，将用于形成改质区域PR的激光束照射到在平面上远离测试用焊盘1LBt和对准标线Am靠近切断区域CR的位置。由此，就能够在采用了隐形切割的半导体晶片的切断处理中降低或者防止切断形状缺陷。
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