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公开(公告)号:CN104124319A
公开(公告)日:2014-10-29
申请号:CN201410171732.7
申请日:2014-04-25
Applicant: 日亚化学工业株式会社
CPC classification number: H01L33/62 , H01L21/6835 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/45 , H01L24/48 , H01L24/82 , H01L24/85 , H01L24/96 , H01L33/24 , H01L33/38 , H01L33/387 , H01L33/40 , H01L33/486 , H01L33/502 , H01L33/54 , H01L33/56 , H01L2021/60 , H01L2221/6835 , H01L2221/68368 , H01L2221/68372 , H01L2221/68381 , H01L2221/68386 , H01L2224/04105 , H01L2224/05644 , H01L2224/05647 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/2101 , H01L2224/2105 , H01L2224/211 , H01L2224/215 , H01L2224/2401 , H01L2224/24011 , H01L2224/2405 , H01L2224/2413 , H01L2224/245 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48095 , H01L2224/48101 , H01L2224/4813 , H01L2224/48644 , H01L2224/48647 , H01L2224/48844 , H01L2224/48847 , H01L2224/821 , H01L2224/82106 , H01L2224/85947 , H01L2224/96 , H01L2924/0002 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/3511 , H01L2933/0016 , H01L2933/005 , H01L2933/0066 , H01L2924/00 , H01L2924/00012 , H01L2924/014 , H01L2924/01079 , H01L2924/01047 , H01L2924/01029 , H01L2924/0105 , H01L2924/00014 , H01L2224/82
Abstract: 本发明的课题在于,提供一种小型且具有充分的强度并且具备高量产性的发光装置。为此,本发明的发光装置具有:半导体芯片,其包含p型半导体层和n型半导体层,在该p型半导体层与该n型半导体层之间发光;p侧衬垫电极,其位于所述半导体芯片的上表面侧且配置在所述p型半导体层上;n侧衬垫电极,其位于所述半导体芯片的上表面侧且配置在所述n型半导体层上;树脂层,其配置为覆盖所述半导体芯片的上表面;和p侧连接电极以及n侧连接电极,其配置在所述树脂层的外表面,且位于所述半导体芯片的上表面侧,所述p侧衬垫电极与所述p侧连接电极之间以及所述n侧衬垫电极与所述n侧连接电极之间的至少一方通过配置在所述树脂内的金属丝而连接。
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公开(公告)号:CN104124319B
公开(公告)日:2018-01-02
申请号:CN201410171732.7
申请日:2014-04-25
Applicant: 日亚化学工业株式会社
CPC classification number: H01L33/62 , H01L21/6835 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/45 , H01L24/48 , H01L24/82 , H01L24/85 , H01L24/96 , H01L33/24 , H01L33/38 , H01L33/387 , H01L33/40 , H01L33/486 , H01L33/502 , H01L33/54 , H01L33/56 , H01L2021/60 , H01L2221/6835 , H01L2221/68368 , H01L2221/68372 , H01L2221/68381 , H01L2221/68386 , H01L2224/04105 , H01L2224/05644 , H01L2224/05647 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/2101 , H01L2224/2105 , H01L2224/211 , H01L2224/215 , H01L2224/2401 , H01L2224/24011 , H01L2224/2405 , H01L2224/2413 , H01L2224/245 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48095 , H01L2224/48101 , H01L2224/4813 , H01L2224/48644 , H01L2224/48647 , H01L2224/48844 , H01L2224/48847 , H01L2224/821 , H01L2224/82106 , H01L2224/85947 , H01L2224/96 , H01L2924/0002 , H01L2924/12035 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/3511 , H01L2933/0016 , H01L2933/005 , H01L2933/0066 , H01L2924/00 , H01L2924/00012 , H01L2924/014 , H01L2924/01079 , H01L2924/01047 , H01L2924/01029 , H01L2924/0105 , H01L2924/00014 , H01L2224/82
Abstract: 本发明的课题在于,提供一种小型且具有充分的强度并且具备高量产性的发光装置。为此,本发明的发光装置具有:半导体芯片,其包含p型半导体层和n型半导体层,在该p型半导体层与该n型半导体层之间发光;p侧衬垫电极,其位于所述半导体芯片的上表面侧且配置在所述p型半导体层上;n侧衬垫电极,其位于所述半导体芯片的上表面侧且配置在所述n型半导体层上;树脂层,其配置为覆盖所述半导体芯片的上表面;和p侧连接电极以及n侧连接电极,其配置在所述树脂层的外表面,且位于所述半导体芯片的上表面侧,所述p侧衬垫电极与所述p侧连接电极之间以及所述n侧衬垫电极与所述n侧连接电极之间的至少一方通过配置在所述树脂内的金属丝而连接。
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