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公开(公告)号:CN1333462C
公开(公告)日:2007-08-22
申请号:CN200410055248.4
申请日:2004-07-09
Applicant: 日东电工株式会社
IPC: H01L23/31 , H01L23/00 , H01L21/304
CPC classification number: B32B27/08 , B32B27/26 , B32B27/38 , B32B2457/00 , H01L21/56 , H01L21/6835 , H01L21/6836 , H01L23/3114 , H01L23/3157 , H01L24/27 , H01L24/29 , H01L2221/68327 , H01L2221/6834 , H01L2221/68363 , H01L2224/1134 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/274 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2224/81191 , H01L2224/81203 , H01L2224/81205 , H01L2224/8121 , H01L2224/81815 , H01L2224/83191 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/07802 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/3025 , Y10T29/49002 , Y10T428/12528 , Y10T428/24802 , Y10T428/24942 , Y10T428/265 , Y10T428/31551 , Y10T428/31565 , H01L2924/00014 , H01L2224/13099 , H01L2924/01028 , H01L2924/00 , H01L2924/3512
Abstract: 一种层压片,用于在研磨晶片背部的步骤中粘附到安装了凸出电极的晶片的电路侧面上,其中该层压片至少包括与电路侧面接触、由热固性树脂制成的层A,直接层压在层A上、由在40℃至80℃时具有1至300MPa的拉伸模量的热塑性树脂制成的层B,以及由在最低25℃的温度时无塑性的热塑性树脂制成的最外层C;一种用于制造半导体器件的方法,该方法包括以下步骤:研磨安装凸出电极的晶片的背部,其中层压片粘附到晶片的电路侧面上,除去层压片的层A之外的其他层,以及将晶片切割为单个芯片;以及一种可通过该方法获得的半导体器件。
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公开(公告)号:CN1577821A
公开(公告)日:2005-02-09
申请号:CN200410055248.4
申请日:2004-07-09
Applicant: 日东电工株式会社
IPC: H01L23/31 , H01L23/00 , H01L21/304
CPC classification number: B32B27/08 , B32B27/26 , B32B27/38 , B32B2457/00 , H01L21/56 , H01L21/6835 , H01L21/6836 , H01L23/3114 , H01L23/3157 , H01L24/27 , H01L24/29 , H01L2221/68327 , H01L2221/6834 , H01L2221/68363 , H01L2224/1134 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/274 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/73104 , H01L2224/73204 , H01L2224/81191 , H01L2224/81203 , H01L2224/81205 , H01L2224/8121 , H01L2224/81815 , H01L2224/83191 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/07802 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/3025 , Y10T29/49002 , Y10T428/12528 , Y10T428/24802 , Y10T428/24942 , Y10T428/265 , Y10T428/31551 , Y10T428/31565 , H01L2924/00014 , H01L2224/13099 , H01L2924/01028 , H01L2924/00 , H01L2924/3512
Abstract: 一种层压片,用于在研磨晶片背部的步骤中粘附到安装凸出电极的晶片的电路侧边,其中该层压片至少包括与电路侧边接触、由热固性树脂制成的层(层A),直接层压在层A上、由在40℃至80℃时具有1至300MPa的拉伸模量的热塑性树脂制成的层(层B),以及由在最低25℃的温度时无塑性的热塑性树脂制成的最外层(层C);一种用于制造半导体器件的方法,该方法包括以下步骤:研磨安装凸出电极的晶片的背部,其中层压片粘附到晶片的电路侧边,除去层压片的层A之外的其他层,以及将晶片切割为单个芯片;以及一种可通过该方法获得的半导体器件。
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公开(公告)号:CN1476066A
公开(公告)日:2004-02-18
申请号:CN03178459.3
申请日:2003-07-16
Applicant: 日东电工株式会社
CPC classification number: H01L21/568 , H01L21/4832 , H01L23/3107 , H01L24/32 , H01L24/45 , H01L24/48 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/85001 , H01L2224/85205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/01047 , H01L2924/01051 , H01L2924/01059 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/0132 , H01L2924/0133 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/18165 , H01L2924/00014 , H01L2924/01026 , H01L2924/01028 , H01L2924/01027 , H01L2924/3512 , H01L2924/00 , H01L2924/20752 , H01L2924/20305 , H01L2924/00012
Abstract: 一种制造半导体器件的方法,包括步骤:(1)在粘附薄片上的粘附层部分上形成多个导电部分,所述粘附层包括基层和粘附层;(2)把具有电极的至少一个半导体元件附加到粘附层,其中半导体元件的无电极边附加到粘附层;(3)在每个导电部分和半导体元件的每个电极之间电连接导线;(4)把半导体元件密封到密封树脂中以在粘附薄片上形成半导体器件;和(5)将粘附薄片从半导体器件脱离。此方法使表面安装型薄半导体器件的生产成为可能。
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