Patent search ap:("瑞萨电子株式会社") AND inv:"山崎隆雄" Page 1

1.

发明公开
电子部件、半导体封装件和电子器件失效转让

公开(公告)号：CN102157458A

公开(公告)日：2011-08-17

申请号：CN201110042145.4

申请日：2007-05-22

Applicant: 日本电气株式会社 , 瑞萨电子株式会社

Inventor： 曾川祯道 , 山崎隆雄 , 高桥信明

IPC: H01L23/00 , H01L23/498 , H01L23/31

CPC classification number: H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012

Abstract: 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。

2.

发明公开
电子部件、半导体封装件和电子器件失效转让

公开(公告)号：CN102738107A

公开(公告)日：2012-10-17

申请号：CN201210183161.X

申请日：2007-05-22

Applicant: 日本电气株式会社 , 瑞萨电子株式会社

Inventor： 曾川祯道 , 山崎隆雄 , 高桥信明

IPC: H01L23/488 , H01L23/498 , H01L23/31

CPC classification number: H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012

Abstract: 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。

3.

发明授权
电子部件、半导体封装件和电子器件失效转让

公开(公告)号：CN102157458B

公开(公告)日：2012-10-17

申请号：CN201110042145.4

申请日：2007-05-22

Applicant: 日本电气株式会社 , 瑞萨电子株式会社

Inventor： 曾川祯道 , 山崎隆雄 , 高桥信明

IPC: H01L23/00 , H01L23/498 , H01L23/31

CPC classification number: H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012

Abstract: 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。

4.

发明公开
电子部件、半导体封装件和电子器件无效转让

公开(公告)号：CN102738106A

公开(公告)日：2012-10-17

申请号：CN201210182881.4

申请日：2007-05-22

Applicant: 日本电气株式会社 , 瑞萨电子株式会社

Inventor： 曾川祯道 , 山崎隆雄 , 高桥信明

IPC: H01L23/488 , H01L23/498 , H01L23/31 , H01L23/24

CPC classification number: H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012

Abstract: 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。

5.

发明授权
电子部件、半导体封装件和电子器件失效转让

公开(公告)号：CN102738107B

公开(公告)日：2014-08-27

申请号：CN201210183161.X

申请日：2007-05-22

Applicant: 瑞萨电子株式会社

Inventor： 曾川祯道 , 山崎隆雄 , 高桥信明

IPC: H01L23/488 , H01L23/498 , H01L23/31

CPC classification number: H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012

Abstract: 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。

6.

发明授权
电子部件、半导体封装件和电子器件失效转让

公开(公告)号：CN101454887B

公开(公告)日：2011-03-23

申请号：CN200780019384.X

申请日：2007-05-22

Applicant: 日本电气株式会社 , 瑞萨电子株式会社

Inventor： 曾川祯道 , 山崎隆雄 , 高桥信明

IPC: H01L21/60 , H01L23/52 , H01L21/3205

CPC classification number: H01L23/49866 , H01L21/563 , H01L23/24 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0362 , H01L2224/03828 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05118 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/0516 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05571 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/1147 , H01L2224/115 , H01L2224/11502 , H01L2224/1152 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75702 , H01L2224/8121 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2224/83104 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/09701 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3512 , H01L2924/3651 , H05K3/244 , H05K3/3436 , H05K3/3463 , H01L2924/00 , H01L2224/05552 , H01L2924/00012

Abstract: 在常规UBM例如Cu、Ni或NiP中，存在的这样问题：在长时间将电子部件保持在高温条件下时导致UBM的阻挡特性被破坏，并且由于在结合界面形成脆性的合金层，导致结合强度降低。焊料连接部分在高温下储存之后长期连接可靠性降低的问题得到了解决。电子部件上提供有：安置在基板或半导体元件上的电极片；和为覆盖所述电极片而安置的阻挡金属层。所述阻挡金属层在与所述电极片接触侧相反的一侧上包含CuNi合金层，所述CuNi合金层含有15至60原子％的Cu和40至85原子％的Ni。

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