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公开(公告)号：CN102386160B
公开(公告)日：2016-06-01
申请号：CN201110256133.1
申请日：2011-08-31
Applicant: 株式会社东芝
IPC: H01L23/488 , H01L21/60
CPC classification number: H01L24/05 , H01L23/3192 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/81 , H01L2224/0231 , H01L2224/02311 , H01L2224/02313 , H01L2224/02331 , H01L2224/0235 , H01L2224/02381 , H01L2224/0239 , H01L2224/024 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/03462 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05018 , H01L2224/05022 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05558 , H01L2224/05567 , H01L2224/05647 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/119 , H01L2224/11901 , H01L2224/13076 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/818 , H01L2224/81801 , H01L2224/8185 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/01022 , H01L2924/04941 , H01L2924/01027 , H01L2924/01046 , H01L2924/01025 , H01L2924/0541 , H01L2224/05552 , H01L2924/00 , H01L2224/1146
Abstract: 公开一种半导体装置及半导体装置的制造方法。根据实施例，设置半导体基板、金属膜、表面改性层和再布线。半导体基板上形成了布线及焊盘电极。金属膜在所述半导体基板上形成。表面改性层在所述金属膜的表层形成，提高与光刻胶图形的贴紧性。再布线隔着所述表面改性层在所述金属膜上形成。
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公开(公告)号：CN104821308A
公开(公告)日：2015-08-05
申请号：CN201510023552.9
申请日：2015-01-16
Applicant: 株式会社东芝
IPC: H01L23/522 , H01L21/768
CPC classification number: H01L23/481 , H01L21/76898 , H01L2224/0557 , H01L2224/13009
Abstract: 根据本实施方式，可提供一种半导体装置。半导体装置包括贯通孔、铜层、以及金属部。贯通孔贯通半导体基板的正面及背面。所述铜层形成在所述贯通孔的内部。所述金属部是由铜以外的金属形成在比所述铜层更靠所述贯通孔的孔芯侧，并且内包空腔。
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公开(公告)号：CN102386164A
公开(公告)日：2012-03-21
申请号：CN201110254704.8
申请日：2011-08-31
Applicant: 株式会社东芝
IPC: H01L23/498 , H01L21/60
CPC classification number: H01L24/11 , H01L21/0206 , H01L21/0274 , H01L24/05 , H01L24/13 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05157 , H01L2224/05166 , H01L2224/05171 , H01L2224/05181 , H01L2224/05184 , H01L2224/05572 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05664 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/11902 , H01L2224/13005 , H01L2224/13076 , H01L2224/13082 , H01L2224/13099 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/94 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2224/11 , H01L2924/2076 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552 , H01L2924/00
Abstract: 公开一种半导体装置及半导体装置的制造方法。根据实施例，设置焊盘电极、保护膜、基底阻挡金属膜和电极布线部。焊盘电极在半导体基板形成。保护膜以使所述焊盘电极的表面露出的方式在所述半导体基板上形成。基底阻挡金属膜在所述焊盘电极及所述保护膜上形成。电极布线部隔着所述基底阻挡金属膜在所述焊盘电极上形成。另外，所述基底阻挡金属膜的表面反射率在波长800nm中为30％以上，所述电极布线部的直径为140μm以下。
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