Patent search ap:("株式会社东芝") AND inv:"永岭公朗" Page 1

1.

发明授权
半导体装置及半导体装置的制造方法有权转让

公开(公告)号：CN102386160B

公开(公告)日：2016-06-01

申请号：CN201110256133.1

申请日：2011-08-31

Applicant: 株式会社东芝

Inventor： 右田达夫 , 江泽弘和 , 山下创一 , 永岭公朗 , 宫田雅弘 , 盐月龙夫 , 村西清

IPC: H01L23/488 , H01L21/60

CPC classification number: H01L24/05 , H01L23/3192 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/81 , H01L2224/0231 , H01L2224/02311 , H01L2224/02313 , H01L2224/02331 , H01L2224/0235 , H01L2224/02381 , H01L2224/0239 , H01L2224/024 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/03462 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05018 , H01L2224/05022 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05558 , H01L2224/05567 , H01L2224/05647 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/119 , H01L2224/11901 , H01L2224/13076 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/818 , H01L2224/81801 , H01L2224/8185 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/01022 , H01L2924/04941 , H01L2924/01027 , H01L2924/01046 , H01L2924/01025 , H01L2924/0541 , H01L2224/05552 , H01L2924/00 , H01L2224/1146

Abstract: 公开一种半导体装置及半导体装置的制造方法。根据实施例，设置半导体基板、金属膜、表面改性层和再布线。半导体基板上形成了布线及焊盘电极。金属膜在所述半导体基板上形成。表面改性层在所述金属膜的表层形成，提高与光刻胶图形的贴紧性。再布线隔着所述表面改性层在所述金属膜上形成。

2.

发明公开
半导体装置及半导体装置的制造方法有权转让

公开(公告)号：CN102386160A

公开(公告)日：2012-03-21

申请号：CN201110256133.1

申请日：2011-08-31

Applicant: 株式会社东芝

Inventor： 右田达夫 , 江泽弘和 , 山下创一 , 永岭公朗 , 宫田雅弘 , 盐月龙夫 , 村西清

IPC: H01L23/488 , H01L21/60

CPC classification number: H01L24/05 , H01L23/3192 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/81 , H01L2224/0231 , H01L2224/02311 , H01L2224/02313 , H01L2224/02331 , H01L2224/0235 , H01L2224/02381 , H01L2224/0239 , H01L2224/024 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/03462 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05018 , H01L2224/05022 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05558 , H01L2224/05567 , H01L2224/05647 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/119 , H01L2224/11901 , H01L2224/13076 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/818 , H01L2224/81801 , H01L2224/8185 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/01022 , H01L2924/04941 , H01L2924/01027 , H01L2924/01046 , H01L2924/01025 , H01L2924/0541 , H01L2224/05552 , H01L2924/00 , H01L2224/1146

Abstract: 公开一种半导体装置及半导体装置的制造方法。根据实施例，设置半导体基板、金属膜、表面改性层和再布线。半导体基板上形成了布线及焊盘电极。金属膜在所述半导体基板上形成。表面改性层在所述金属膜的表层形成，提高与光刻胶图形的贴紧性。再布线隔着所述表面改性层在所述金属膜上形成。

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