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公开(公告)号:CN85106110B
公开(公告)日:1987-12-09
申请号:CN85106110
申请日:1985-08-13
Applicant: 株式会社东芝
IPC: H01L21/603
CPC classification number: H01L24/97 , H01L24/73 , H01L2224/32245 , H01L2224/45 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2224/78 , H01L2224/78301 , H01L2224/85 , H01L2224/85075 , H01L2224/85181 , H01L2224/85201 , H01L2224/92247 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/15747 , H01L2924/00014 , H01L2224/83 , H01L2924/00 , H01L2924/00012
Abstract: 一个引线框在充满还原性气体的传送通道中沿传送方向传送。在芯片焊接位置,将半导体芯片放在引线框上。铜或铜合金制做的金属丝提供给相邻的下一个金属丝压焊位置。用气罩包围的氢氧焰来熔化金属丝的下部未端,以形成一个球状体。金属丝由一根毛细管送入到传送通道内。球状体被热压到半导体芯片的电极层上,金属丝的另一端被熔断并在后步压焊位置被热压到引线框的外引线上,从而金属丝被连接在半导体芯片和外引线之间。
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公开(公告)号:CN85106110A
公开(公告)日:1986-10-01
申请号:CN85106110
申请日:1985-08-13
Applicant: 株式会社东芝
IPC: H01L21/603
CPC classification number: H01L24/97 , H01L24/73 , H01L2224/32245 , H01L2224/45 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2224/78 , H01L2224/78301 , H01L2224/85 , H01L2224/85075 , H01L2224/85181 , H01L2224/85201 , H01L2224/92247 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/15747 , H01L2924/00014 , H01L2224/83 , H01L2924/00 , H01L2924/00012
Abstract: 一个引线框在充满还原性气体的传送通道中沿传送方向传送。在芯片焊接位置,将半导体芯片放在引线框上。铜或铜合金制做的金属丝提供给相邻的下一个金属丝压焊位置。用气罩包围的氢氧焰来熔化金属丝的下部末端,以形成一个球状体。金属丝由一根毛细管送入到传送通道内。球状体被热压到半导体芯片的电极层上。金属丝的另一端被熔断并在后步压焊位置被热压到引线框的外引线上,从而金属丝被连接在半导体芯片和外引线之间。
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