公开(公告)号：US20150070076A1

公开(公告)日：2015-03-12

申请号：US14539098

申请日：2014-11-12

Applicant: Transphorm Inc.

Inventor： James Honea ,  Yifeng Wu

IPC: H03K17/0814 ,  H03K17/22 ,  H03K17/687 ,  H03K17/16

CPC classification number: H03K17/08142 ,  H03K17/162 ,  H03K17/223 ,  H03K17/567 ,  H03K17/6871

Abstract: A half bridge is described with at least one transistor having a channel that is capable in a first mode of operation of blocking a substantial voltage in at least one direction, in a second mode of operation of conducting substantial current in one direction through the channel and in a third mode of operation of conducting substantial current in an opposite direction through the channel. The half bridge can have two circuits with such a transistor.

公开(公告)号：US20170222640A1

公开(公告)日：2017-08-03

申请号：US15491920

申请日：2017-04-19

Applicant: Transphorm Inc.

Inventor： Zhan Wang ,  Yifeng Wu ,  James Honea

IPC: H03K17/16 ,  H03K17/041 ,  H03K17/10 ,  H01L27/06 ,  H01L29/20 ,  H01L23/64 ,  H03K17/12 ,  H01L27/088

CPC classification number: H03K17/162 ,  H01L23/49562 ,  H01L23/552 ,  H01L23/645 ,  H01L24/48 ,  H01L27/0605 ,  H01L27/0883 ,  H01L29/16 ,  H01L29/2003 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/3025 ,  H03K17/04106 ,  H03K17/102 ,  H03K17/122 ,  H03K17/16 ,  H03K17/165 ,  H03K2017/6875 ,  H01L2224/45099

Abstract: A circuit includes an electronic component package that comprises at least a first lead, a III-N device in the electronic component package, a gate driver, and a ferrite bead. The III-N device comprises a drain, gate, and source, where the source is coupled to the first lead. The gate driver comprises a first terminal and a second terminal, where the first terminal is coupled to the first lead. The ferrite bead is coupled between the gate of the III-N transistor and the second terminal of the gate driver. When switching, the deleterious effects of the parasitic inductance of the circuit gate loop are mitigated by the ferrite bead.

公开(公告)号：US09293458B2

公开(公告)日：2016-03-22

申请号：US14058089

申请日：2013-10-18

Applicant: Transphorm Inc.

Inventor： Primit Parikh ,  James Honea ,  Carl C. Blake, Jr. ,  Robert Coffie ,  Yifeng Wu ,  Umesh Mishra

IPC: H03K17/687 ,  H01L27/088 ,  H01L21/8258 ,  H01L27/06 ,  H03K17/567 ,  H01L23/495 ,  H01L25/16 ,  H01L23/64 ,  H01L25/18

CPC classification number: H01L27/0883 ,  H01L21/8258 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/642 ,  H01L23/647 ,  H01L25/165 ,  H01L25/18 ,  H01L27/0605 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/30107 ,  H03K17/567 ,  H01L2924/00

Abstract: An electronic component includes a high-voltage depletion-mode transistor and a low-voltage enhancement-mode transistor both encased in a single package. A source electrode of the high-voltage depletion-mode transistor is electrically connected to a drain electrode of the low-voltage enhancement-mode transistor, a drain electrode of the high-voltage depletion-mode transistor is electrically connected to a drain lead of the single package, a gate electrode of the low-voltage enhancement-mode transistor is electrically connected to a gate lead of the single package, a gate electrode of the high-voltage depletion-mode transistor is electrically connected to an additional lead of the single package, and a source electrode of the low-voltage enhancement-mode transistor is electrically connected to a conductive structural portion of the single package.

Abstract translation: 电子部件包括高压耗尽型晶体管和低压增强型晶体管，两者都封装在单个封装中。 高电压耗尽型晶体管的源电极电连接到低电压增强型晶体管的漏电极，高电压耗尽型晶体管的漏极电连接到漏极引线 单个封装，低电压增强型晶体管的栅电极电连接到单个封装的栅极引线，高电压耗尽型晶体管的栅极电连接到单个封装的附加引线 并且低电压增强型晶体管的源电极电连接到单个封装的导电结构部分。

公开(公告)号：US09041435B2

公开(公告)日：2015-05-26

申请号：US14307234

申请日：2014-06-17

Applicant: Transphorm, Inc.

Inventor： James Honea ,  Yifeng Wu

IPC: H03K3/00 ,  H03K17/687 ,  H02M1/12 ,  H03K17/16 ,  H03K17/567 ,  H02P7/29 ,  H02M7/5395

CPC classification number: H03K17/687 ,  H02M1/126 ,  H02M7/5395 ,  H02P7/29 ,  H03K17/162 ,  H03K17/567 ,  H03K17/6871 ,  Y10T29/49105

Abstract: An electronic component comprising a half bridge adapted for operation with an electrical load having an operating frequency is described. The half bridge comprises a first switch and a second switch each having a switching frequency, the first switch and the second switch each including a first terminal, a second terminal, and a control terminal, wherein the first terminal of the first switch and the second terminal of the second switch are both electrically connected to a node. The electronic component further includes a filter having a 3 dB roll-off frequency, the 3 dB roll-off frequency being less than the switching frequency of the switches but greater than the operating frequency of the electrical load. The first terminal of the filter is electrically coupled to the node, and the 3 dB roll-off frequency of the filter is greater than 5 kHz.

Abstract translation: 描述了包括适于与具有工作频率的电负载一起工作的半桥的电子部件。 半桥包括第一开关和第二开关，每个具有开关频率，第一开关和第二开关各自包括第一端子，第二端子和控制端子，其中第一开关的第一端子和第二开关 第二开关的端子都电连接到节点。 电子部件还包括具有3dB滚降频率的滤波器，3dB滚降频率小于开关的开关频率，但大于电负载的工作频率。 滤波器的第一个端子电耦合到节点，滤波器的3 dB滚降频率大于5 kHz。

公开(公告)号：US20130320939A1

公开(公告)日：2013-12-05

申请号：US13959483

申请日：2013-08-05

Applicant: Transphorm Inc.

Inventor： James Honea ,  Yifeng Wu

IPC: G05F1/70

CPC classification number: G05F1/70 ,  H03K17/08142 ,  Y10T29/41 ,  Y10T29/49117

Abstract: Power switching circuits including an inductive load and a switching device are described. The switches devices can be either low-side or high-side switches. Some of the switches are transistors that are able to block voltages or prevent substantial current from flowing through the transistor when voltage is applied across the transistor.

Abstract translation: 描述了包括电感负载和开关装置的功率开关电路。 开关器件可以是低端或高端开关。 一些开关是当晶体管上施加电压时能够阻挡电压或防止大量电流流过晶体管的晶体管。

公开(公告)号：US09866210B2

公开(公告)日：2018-01-09

申请号：US14539098

申请日：2014-11-12

Applicant: Transphorm Inc.

Inventor： James Honea ,  Yifeng Wu

IPC: H03K17/56 ,  H03K17/0814 ,  H03K17/16 ,  H03K17/567 ,  H03K17/687 ,  H03K17/22

Abstract: A half bridge is described with at least one transistor having a channel that is capable in a first mode of operation of blocking a substantial voltage in at least one direction, in a second mode of operation of conducting substantial current in one direction through the channel and in a third mode of operation of conducting substantial current in an opposite direction through the channel. The half bridge can have two circuits with such a transistor.

公开(公告)号：US20160006428A1

公开(公告)日：2016-01-07

申请号：US14323777

申请日：2014-07-03

Applicant: Transphorm Inc.

Inventor： Zhan Wang ,  Yifeng Wu ,  James Honea

IPC: H03K17/16 ,  H01L29/16 ,  H01L27/088 ,  H03K3/012 ,  H01L29/20

CPC classification number: H03K17/162 ,  H01L23/49562 ,  H01L23/552 ,  H01L23/645 ,  H01L24/48 ,  H01L27/0605 ,  H01L27/0883 ,  H01L29/16 ,  H01L29/2003 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/3025 ,  H03K17/04106 ,  H03K17/102 ,  H03K17/122 ,  H03K17/16 ,  H03K17/165 ,  H03K2017/6875 ,  H01L2224/45099

Abstract: A circuit includes an electronic component package that comprises at least a first lead, a III-N device in the electronic component package, a gate driver, and a ferrite bead. The III-N device comprises a drain, gate, and source, where the source is coupled to the first lead. The gate driver comprises a first terminal and a second terminal, where the first terminal is coupled to the first lead. The ferrite bead is coupled between the gate of the III-N transistor and the second terminal of the gate driver. When switching, the deleterious effects of the parasitic inductance of the circuit gate loop are mitigated by the ferrite bead.

Abstract translation: 电路包括电子部件封装，其包括至少第一引线，电子元件封装中的III-N器件，栅极驱动器和铁氧体磁珠。 III-N器件包括漏极，栅极和源极，源极耦合到第一引线。 栅极驱动器包括第一端子和第二端子，其中第一端子耦合到第一引线。 铁氧体磁珠耦合在III-N晶体管的栅极和栅极驱动器的第二端子之间。 当切换时，电路门环的寄生电感的有害影响由铁氧体磁珠缓解。

公开(公告)号：US20150016169A1

公开(公告)日：2015-01-15

申请号：US14321269

申请日：2014-07-01

Applicant: Transphorm Inc.

Inventor： James Honea

IPC: H02M7/5387

CPC classification number: H02M7/5387 ,  H02M7/483 ,  H02M7/487 ,  H02M2001/0054 ,  H02M2001/007 ,  Y02B70/1491

Abstract: A multilevel inverter includes a first half bridge in series with a second half bridge, each comprising a switch having a channel. The switch is configured to block a substantial voltage in a first direction during a first mode of operation, to conduct substantial current through the channel in the first direction during a second mode of operation, and to conduct substantial current through the channel in a second direction during a third mode of operation. During the third mode of operation, a gate of the switch is biased relative to a source of the switch at a voltage that is less than a threshold voltage of the switch. The inverter may also include a third half bridge. The inverter can be configured such that in operation, switches of the third half bridge are switched at a substantially lower frequency than the switches of the first and second half bridges.

Abstract translation: 多电平逆变器包括与第二半桥串联的第一半桥，每个包括具有通道的开关。 该开关被配置为在第一操作模式期间在第一方向上阻挡基本电压，以在第二操作模式期间沿第一方向导通大量电流通过该通道，并且在第二方向上使大量电流通过该通道 在第三种操作模式下。 在第三操作模式期间，开关的栅极相对于开关的源极以小于开关的阈值电压的电压被偏置。 逆变器还可以包括第三半桥。 逆变器可以被配置为使得在操作中，第三半桥的开关以比第一和第二半桥的开关低得多的频率被切换。

公开(公告)号：US20140042495A1

公开(公告)日：2014-02-13

申请号：US14058089

申请日：2013-10-18

Applicant: Transphorm Inc.

Inventor： Primit Parikh ,  James Honea ,  Carl C. Blake, Jr. ,  Robert Coffie ,  Yifeng Wu ,  Umesh Mishra

IPC: H01L27/088

CPC classification number: H01L27/0883 ,  H01L21/8258 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/642 ,  H01L23/647 ,  H01L25/165 ,  H01L25/18 ,  H01L27/0605 ,  H01L2224/48137 ,  H01L2224/48195 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/30107 ,  H03K17/567 ,  H01L2924/00

Abstract: An electronic component includes a high-voltage depletion-mode transistor and a low-voltage enhancement-mode transistor both encased in a single package. A source electrode of the high-voltage depletion-mode transistor is electrically connected to a drain electrode of the low-voltage enhancement-mode transistor, a drain electrode of the high-voltage depletion-mode transistor is electrically connected to a drain lead of the single package, a gate electrode of the low-voltage enhancement-mode transistor is electrically connected to a gate lead of the single package, a gate electrode of the high-voltage depletion-mode transistor is electrically connected to an additional lead of the single package, and a source electrode of the low-voltage enhancement-mode transistor is electrically connected to a conductive structural portion of the single package.

Abstract translation: 电子部件包括高压耗尽型晶体管和低压增强型晶体管，两者都封装在单个封装中。 高电压耗尽型晶体管的源电极电连接到低电压增强型晶体管的漏电极，高电压耗尽型晶体管的漏极电连接到漏极引线 单个封装，低电压增强型晶体管的栅电极电连接到单个封装的栅极引线，高电压耗尽型晶体管的栅极电连接到单个封装的附加引线 并且低电压增强型晶体管的源电极电连接到单个封装的导电结构部分。

公开(公告)号：US09991884B2

公开(公告)日：2018-06-05

申请号：US15491920

申请日：2017-04-19

Applicant: Transphorm Inc.

Inventor： Zhan Wang ,  Yifeng Wu ,  James Honea

IPC: H03B1/00 ,  H03K3/00 ,  H03K17/16 ,  H01L29/20 ,  H01L29/16 ,  H03K17/10 ,  H03K17/12 ,  H01L23/495 ,  H01L23/552 ,  H01L23/64 ,  H01L27/06 ,  H01L27/088 ,  H03K17/041 ,  H03K17/687 ,  H01L23/00

CPC classification number: H03K17/162 ,  H01L23/49562 ,  H01L23/552 ,  H01L23/645 ,  H01L24/48 ,  H01L27/0605 ,  H01L27/0883 ,  H01L29/16 ,  H01L29/2003 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/3025 ,  H03K17/04106 ,  H03K17/102 ,  H03K17/122 ,  H03K17/16 ,  H03K17/165 ,  H03K2017/6875 ,  H01L2224/45099

Abstract: A circuit includes an electronic component package that comprises at least a first lead, a III-N device in the electronic component package, a gate driver, and a ferrite bead. The III-N device comprises a drain, gate, and source, where the source is coupled to the first lead. The gate driver comprises a first terminal and a second terminal, where the first terminal is coupled to the first lead. The ferrite bead is coupled between the gate of the III-N transistor and the second terminal of the gate driver. When switching, the deleterious effects of the parasitic inductance of the circuit gate loop are mitigated by the ferrite bead.