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    Gate drivers for circuits based on semiconductor devices
    1.
    发明授权
    Gate drivers for circuits based on semiconductor devices 有权
    基于半导体器件的电路的栅极驱动器

    公开(公告)号：US09059076B2

    公开(公告)日：2015-06-16

    申请号：US14222992

    申请日：2014-03-24

    Applicant: Transphorm Inc.

    Inventor： Yifeng Wu ,  Liang Zhou ,  Zhan Wang

    IPC: H03K3/00 ,  H01L29/20 ,  H03K17/16 ,  H01L29/40 ,  H01L29/778 ,  H03K17/687 ,  H01L29/423

    CPC classification number: H03K17/162 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/4236 ,  H01L29/66522 ,  H01L29/7786 ,  H03K17/163 ,  H03K2017/6875

    Abstract: An electronic component includes a switching device comprising a source, a gate, and a drain, the switching device having a predetermined device switching rate. The electronic component further includes a gate driver electrically connected to the gate and coupled between the source and the gate of the switching device, the gate driver configured to switch a gate voltage of the switching device at a gate driver switching rate. The gate driver is configured such that in operation, an output current of the gate driver cannot exceed a first current level, wherein the first current level is sufficiently small to provide a switching rate of the switching device in operation to be less than the predetermined device switching rate.

    Abstract translation: 电子部件包括开关装置，其包括源极，栅极和漏极，开关器件具有预定的器件切换速率。 电子部件还包括电连接到栅极并耦合在开关器件的源极和栅极之间的栅极驱动器，栅极驱动器被配置为以栅极驱动器切换速率切换开关器件的栅极电压。 栅极驱动器被配置为使得在操作中，栅极驱动器的输出电流不能超过第一电流电平，其中第一电流电平足够小以使开关装置在运行中的开关率小于预定的装置 切换率。

    Paralleling of switching devices for high power circuits
    2.
    发明授权
    Paralleling of switching devices for high power circuits 有权

    公开(公告)号：US10200030B2

    公开(公告)日：2019-02-05

    申请号：US15554170

    申请日：2016-03-11

    Applicant: Transphorm Inc.

    Inventor： Zhan Wang

    IPC: H02P27/08 ,  H03K17/687 ,  H03K17/12 ,  H03K17/16 ,  H03K17/64 ,  H02M1/08 ,  H01L29/20 ,  H01L29/778 ,  H02M7/5395 ,  H02M1/00

    Abstract: A circuit includes first and second half bridges, a first inductor, a second inductor, and a main inductor. The half bridges each include a high side switch, a low side switch, and a gate driver configured to apply switching signals to the high side switch and the low side switch. The first inductor has one side electrically connected to an output node of the first half bridge between the high side switch and the low side switch. The second inductor has one side electrically connected to an output node of the second half bridge between the high side switch and the low side switch. The main inductor is coupled to a node between the other sides of the first and second inductors. The main inductor has a greater inductance than each of the first and second inductors, and the first and second inductors are inversely coupled to one another.

    GATE DRIVERS FOR CIRCUITS BASED ON SEMICONDUCTOR DEVICES
    4.
    发明申请
    GATE DRIVERS FOR CIRCUITS BASED ON SEMICONDUCTOR DEVICES 有权
    基于半导体器件的电路门驱动器

    公开(公告)号：US20140292395A1

    公开(公告)日：2014-10-02

    申请号：US14222992

    申请日：2014-03-24

    Applicant: Transphorm Inc.

    Inventor： Yifeng Wu ,  Liang Zhou ,  Zhan Wang

    IPC: H03K17/16

    CPC classification number: H03K17/162 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/4236 ,  H01L29/66522 ,  H01L29/7786 ,  H03K17/163 ,  H03K2017/6875

    Abstract: An electronic component includes a switching device comprising a source, a gate, and a drain, the switching device having a predetermined device switching rate. The electronic component further includes a gate driver electrically connected to the gate and coupled between the source and the gate of the switching device, the gate driver configured to switch a gate voltage of the switching device at a gate driver switching rate. The gate driver is configured such that in operation, an output current of the gate driver cannot exceed a first current level, wherein the first current level is sufficiently small to provide a switching rate of the switching device in operation to be less than the predetermined device switching rate.

    Abstract translation: 电子部件包括开关装置，其包括源极，栅极和漏极，开关器件具有预定的器件切换速率。 电子部件还包括电连接到栅极并耦合在开关器件的源极和栅极之间的栅极驱动器，栅极驱动器被配置为以栅极驱动器切换速率切换开关器件的栅极电压。 栅极驱动器被配置为使得在操作中，栅极驱动器的输出电流不能超过第一电流电平，其中第一电流电平足够小以使开关装置在运行中的开关率小于预定的装置 切换率。

    GATE DRIVERS FOR CIRCUITS BASED ON SEMICONDUCTOR DEVICES
    7.
    发明申请
    GATE DRIVERS FOR CIRCUITS BASED ON SEMICONDUCTOR DEVICES 有权
    基于半导体器件的电路门驱动器

    公开(公告)号：US20150249447A1

    公开(公告)日：2015-09-03

    申请号：US14708627

    申请日：2015-05-11

    Applicant: Transphorm Inc.

    Inventor： Yifeng Wu ,  Liang Zhou ,  Zhan Wang

    IPC: H03K17/16

    CPC classification number: H03K17/162 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/4236 ,  H01L29/66522 ,  H01L29/7786 ,  H03K17/163 ,  H03K2017/6875

    Abstract: An electronic component includes a switching device comprising a source, a gate, and a drain, the switching device having a predetermined device switching rate. The electronic component further includes a gate driver electrically connected to the gate and coupled between the source and the gate of the switching device, the gate driver configured to switch a gate voltage of the switching device at a gate driver switching rate. The gate driver is configured such that in operation, an output current of the gate driver cannot exceed a first current level, wherein the first current level is sufficiently small to provide a switching rate of the switching device in operation to be less than the predetermined device switching rate.

    Abstract translation: 电子部件包括开关装置，其包括源极，栅极和漏极，开关器件具有预定的器件切换速率。 电子部件还包括电连接到栅极并耦合在开关器件的源极和栅极之间的栅极驱动器，栅极驱动器被配置为以栅极驱动器切换速率切换开关器件的栅极电压。 栅极驱动器被配置为使得在操作中，栅极驱动器的输出电流不能超过第一电流电平，其中第一电流电平足够小以使开关装置在运行中的开关率小于预定的装置 切换率。

    Paralleling of Switching Devices for High Power Circuits
    9.
    发明申请
    Paralleling of Switching Devices for High Power Circuits 审中-公开

    公开(公告)号：US20180083617A1

    公开(公告)日：2018-03-22

    申请号：US15554170

    申请日：2016-03-11

    Applicant: Transphorm Inc.

    Inventor： Zhan Wang

    IPC: H03K17/687 ,  H02P27/08 ,  H02M1/08

    CPC classification number: H03K17/6874 ,  H01L29/2003 ,  H01L29/7787 ,  H02M1/08 ,  H02M7/5395 ,  H02M2001/0054 ,  H02P27/08 ,  H03K17/122 ,  H03K17/162 ,  H03K17/164 ,  H03K17/64

    Abstract: A circuit includes first and second half bridges, a first inductor, a second inductor, and a main inductor. The half bridges each include a high side switch, a low side switch, and a gate driver configured to apply switching signals to the high side switch and the low side switch. The first inductor has one side electrically connected to an output node of the first half bridge between the high side switch and the low side switch. The second inductor has one side electrically connected to an output node of the second half bridge between the high side switch and the low side switch. The main inductor is coupled to a node between the other sides of the first and second inductors. The main inductor has a greater inductance than each of the first and second inductors, and the first and second inductors are inversely coupled to one another.

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