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公开(公告)号：US20160359030A1
公开(公告)日：2016-12-08
申请号：US15242266
申请日：2016-08-19
Applicant: Transphorm Inc.
Inventor： Umesh Mishra , Robert Coffie , Likun Shen , Ilan Ben-Yaacov , Primit Parikh
IPC: H01L29/778 , H01L29/66 , H01L29/207 , H01L29/20 , H01L29/205
CPC classification number: H01L29/7784 , H01L21/0217 , H01L21/0254 , H01L29/0847 , H01L29/1033 , H01L29/2003 , H01L29/205 , H01L29/207 , H01L29/365 , H01L29/4236 , H01L29/518 , H01L29/66431 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L29/7788
Abstract: A III-N semiconductor device that includes a substrate and a nitride channel layer including a region partly beneath a gate region, and two channel access regions on opposite sides of the part beneath the gate. The channel access regions may be in a different layer from the region beneath the gate. The device includes an AlXN layer adjacent the channel layer wherein X is gallium, indium or their combination, and a preferably n-doped GaN layer adjacent the AlXN layer in the areas adjacent to the channel access regions. The concentration of Al in the AlXN layer, the AlXN layer thickness and the n-doping concentration in the n-doped GaN layer are selected to induce a 2DEG charge in channel access regions without inducing any substantial 2DEG charge beneath the gate, so that the channel is not conductive in the absence of a switching voltage applied to the gate.
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公开(公告)号：US09041065B2
公开(公告)日：2015-05-26
申请号：US13973890
申请日：2013-08-22
Applicant: Transphorm Inc.
Inventor： Yifeng Wu , Umesh Mishra , Primit Parikh , Rongming Chu , Ilan Ben-Yaacov , Likun Shen
IPC: H01L29/739 , H01L29/06 , H01L29/20 , H01L29/205 , H01L29/872 , H01L27/06 , H01L29/778 , H01L29/423
CPC classification number: H01L29/0615 , H01L27/0629 , H01L29/2003 , H01L29/205 , H01L29/4236 , H01L29/778 , H01L29/7786 , H01L29/7787 , H01L29/872
Abstract: Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact is connected to the 2DEG, forming an ohmic contact with the layer containing the 2DEG.
Abstract translation: 平面肖特基二极管，其半导体材料包括在至少一个半导体层中诱导2DEG的异质结。 金属阳极触点位于上半导体层的顶部，与该层形成肖特基接触。 金属阴极接触件连接到2DEG，与包含2DEG的层形成欧姆接触。
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公开(公告)号：US20160071951A1
公开(公告)日：2016-03-10
申请号：US14945341
申请日：2015-11-18
Applicant: Transphorm Inc.
Inventor： Umesh Mishra , Robert Coffie , Likun Shen , Ilan Ben-Yaacov , Primit Parikh
IPC: H01L29/66 , H01L29/51 , H01L29/207 , H01L21/02 , H01L29/20 , H01L29/205
CPC classification number: H01L29/7784 , H01L21/0217 , H01L21/0254 , H01L29/0847 , H01L29/1033 , H01L29/2003 , H01L29/205 , H01L29/207 , H01L29/365 , H01L29/4236 , H01L29/518 , H01L29/66431 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L29/7788
Abstract: A III-N semiconductor device that includes a substrate and a nitride channel layer including a region partly beneath a gate region, and two channel access regions on opposite sides of the part beneath the gate. The channel access regions may be in a different layer from the region beneath the gate. The device includes an AlXN layer adjacent the channel layer wherein X is gallium, indium or their combination, and a preferably n-doped GaN layer adjacent the AlXN layer in the areas adjacent to the channel access regions. The concentration of Al in the AlXN layer, the AlXN layer thickness and the n-doping concentration in the n-doped GaN layer are selected to induce a 2DEG charge in channel access regions without inducing any substantial 2DEG charge beneath the gate, so that the channel is not conductive in the absence of a switching voltage applied to the gate.
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公开(公告)号：US08841702B2
公开(公告)日：2014-09-23
申请号：US13954772
申请日：2013-07-30
Applicant: Transphorm Inc.
Inventor： Umesh Mishra , Robert Coffie , Likun Shen , Ilan Ben-Yaacov , Primit Parikh
IPC: H01L29/66
CPC classification number: H01L29/7784 , H01L21/0217 , H01L21/0254 , H01L29/0847 , H01L29/1033 , H01L29/2003 , H01L29/205 , H01L29/207 , H01L29/365 , H01L29/4236 , H01L29/518 , H01L29/66431 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L29/7788
Abstract: A III-N semiconductor device that includes a substrate and a nitride channel layer including a region partly beneath a gate region, and two channel access regions on opposite sides of the part beneath the gate. The channel access regions may be in a different layer from the region beneath the gate. The device includes an AlXN layer adjacent the channel layer wherein X is gallium, indium or their combination, and a preferably n-doped GaN layer adjacent the AlXN layer in the areas adjacent to the channel access regions. The concentration of Al in the AlXN layer, the AlXN layer thickness and the n-doping concentration in the n-doped GaN layer are selected to induce a 2DEG charge in channel access regions without inducing any substantial 2DEG charge beneath the gate, so that the channel is not conductive in the absence of a switching voltage applied to the gate.
Abstract translation: 一种III-N半导体器件，其包括衬底和包括部分在栅极区域下方的区域的氮化物沟道层，以及在栅极下方的部分的相对侧上的两个沟道存取区域。 通道接入区域可以在与栅极下方的区域不同的层中。 该器件包括与沟道层相邻的AlXN层，其中X是镓，铟或它们的组合，以及在与沟道接入区相邻的区域中与AlXN层相邻的优选n掺杂GaN层。 选择AlXN层中的Al的浓度，n掺杂GaN层中的AlXN层厚度和n掺杂浓度，以在沟道接入区域中引起2DEG电荷，而不在栅极下方引起任何实质的2DEG电荷，使得 在没有施加到栅极的开关电压的情况下，通道不导通。
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公开(公告)号：US20140361309A1
公开(公告)日：2014-12-11
申请号：US14464639
申请日：2014-08-20
Applicant: Transphorm Inc.
Inventor： Umesh Mishra , Robert Coffie , Likun Shen , Ilan Ben-Yaacov , Primit Parikh
IPC: H01L29/778 , H01L29/10 , H01L29/08
CPC classification number: H01L29/7784 , H01L21/0217 , H01L21/0254 , H01L29/0847 , H01L29/1033 , H01L29/2003 , H01L29/205 , H01L29/207 , H01L29/365 , H01L29/4236 , H01L29/518 , H01L29/66431 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L29/7788
Abstract: A III-N semiconductor device that includes a substrate and a nitride channel layer including a region partly beneath a gate region, and two channel access regions on opposite sides of the part beneath the gate. The channel access regions may be in a different layer from the region beneath the gate. The device includes an AlXN layer adjacent the channel layer wherein X is gallium, indium or their combination, and a preferably n-doped GaN layer adjacent the AlXN layer in the areas adjacent to the channel access regions. The concentration of Al in the AlXN layer, the AlXN layer thickness and the n-doping concentration in the n-doped GaN layer are selected to induce a 2DEG charge in channel access regions without inducing any substantial 2DEG charge beneath the gate, so that the channel is not conductive in the absence of a switching voltage applied to the gate.
Abstract translation: 一种III-N半导体器件，其包括衬底和包括部分在栅极区域下方的区域的氮化物沟道层，以及在栅极下方的部分的相对侧上的两个沟道存取区域。 通道接入区域可以在与栅极下方的区域不同的层中。 该器件包括与沟道层相邻的AlXN层，其中X是镓，铟或它们的组合，以及在与沟道接入区相邻的区域中与AlXN层相邻的优选n掺杂GaN层。 选择AlXN层中的Al的浓度，n掺杂GaN层中的AlXN层厚度和n掺杂浓度，以在沟道接入区域中引起2DEG电荷，而不在栅极下方引起任何实质的2DEG电荷，使得 在没有施加到栅极的开关电压的情况下，通道不导通。
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Patent Agency Ranking
公开(公告)号：US20130316502A1
公开(公告)日：2013-11-28
申请号：US13954772
申请日：2013-07-30
Applicant: Transphorm Inc.
Inventor： Umesh Mishra , Robert Coffie , Likun Shen , Ilan Ben-Yaacov , Primit Parikh
IPC: H01L29/66
CPC classification number: H01L29/7784 , H01L21/0217 , H01L21/0254 , H01L29/0847 , H01L29/1033 , H01L29/2003 , H01L29/205 , H01L29/207 , H01L29/365 , H01L29/4236 , H01L29/518 , H01L29/66431 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L29/7788
Abstract: A III-N semiconductor device that includes a substrate and a nitride channel layer including a region partly beneath a gate region, and two channel access regions on opposite sides of the part beneath the gate. The channel access regions may be in a different layer from the region beneath the gate. The device includes an AlXN layer adjacent the channel layer wherein X is gallium, indium or their combination, and a preferably n-doped GaN layer adjacent the AlXN layer in the areas adjacent to the channel access regions. The concentration of Al in the AlXN layer, the AlXN layer thickness and the n-doping concentration in the n-doped GaN layer are selected to induce a 2DEG charge in channel access regions without inducing any substantial 2DEG charge beneath the gate, so that the channel is not conductive in the absence of a switching voltage applied to the gate.
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公开(公告)号：US10319648B2
公开(公告)日：2019-06-11
申请号：US15955515
申请日：2018-04-17
Applicant: Transphorm Inc.
Inventor： Kurt Vernon Smith , Likun Shen , David Michael Rhodes , Ronald Avrom Barr , James Leroy McKay
Abstract: Techniques for improving reliability of III-N devices include holding the III-N devices at a first temperature less than or equal to 30° for a first period of time while applying a first gate-source voltage lower than a threshold voltage of the III-N devices and a first drain-source voltage greater than 0.2 times a break down voltage of the III-N devices; and holding the III-N devices at a second temperature greater than the first temperature for a second period of time while applying a second gate-source voltage lower than a threshold voltage of the III-N devices and a second drain-source voltage greater than 0.2 times a breakdown voltage of the III-N devices. After holding the III-N devices at the first and second temperatures, screening the III-N devices based on electrical performance of one or more parameters of the III-N devices.
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公开(公告)号：US09941399B2
公开(公告)日：2018-04-10
申请号：US15242266
申请日：2016-08-19
Applicant: Transphorm Inc.
Inventor： Umesh Mishra , Robert Coffie , Likun Shen , Ilan Ben-Yaacov , Primit Parikh
IPC: H03H11/46 , H01L29/778 , H01L29/20 , H01L29/66 , H01L29/36 , H01L29/423 , H01L29/08 , H01L29/10 , H01L21/02 , H01L29/205 , H01L29/207 , H01L29/51
CPC classification number: H01L29/7784 , H01L21/0217 , H01L21/0254 , H01L29/0847 , H01L29/1033 , H01L29/2003 , H01L29/205 , H01L29/207 , H01L29/365 , H01L29/4236 , H01L29/518 , H01L29/66431 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L29/7788
Abstract: A III-N semiconductor device that includes a substrate and a nitride channel layer including a region partly beneath a gate region, and two channel access regions on opposite sides of the part beneath the gate. The channel access regions may be in a different layer from the region beneath the gate. The device includes an AlXN layer adjacent the channel layer wherein X is gallium, indium or their combination, and a preferably n-doped GaN layer adjacent the AlXN layer in the areas adjacent to the channel access regions. The concentration of Al in the AlXN layer, the AlXN layer thickness and the n-doping concentration in the n-doped GaN layer are selected to induce a 2DEG charge in channel access regions without inducing any substantial 2DEG charge beneath the gate, so that the channel is not conductive in the absence of a switching voltage applied to the gate.
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公开(公告)号：US09437708B2
公开(公告)日：2016-09-06
申请号：US14945341
申请日：2015-11-18
Applicant: Transphorm Inc.
Inventor： Umesh Mishra , Robert Coffie , Likun Shen , Ilan Ben-Yaacov , Primit Parikh
IPC: H01L29/66 , H01L29/20 , H01L29/778 , H01L29/36 , H01L29/423 , H01L29/08 , H01L29/10 , H01L21/02 , H01L29/205 , H01L29/207 , H01L29/51
CPC classification number: H01L29/7784 , H01L21/0217 , H01L21/0254 , H01L29/0847 , H01L29/1033 , H01L29/2003 , H01L29/205 , H01L29/207 , H01L29/365 , H01L29/4236 , H01L29/518 , H01L29/66431 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L29/7788
Abstract: A III-N semiconductor device that includes a substrate and a nitride channel layer including a region partly beneath a gate region, and two channel access regions on opposite sides of the part beneath the gate. The channel access regions may be in a different layer from the region beneath the gate. The device includes an AlXN layer adjacent the channel layer wherein X is gallium, indium or their combination, and a preferably n-doped GaN layer adjacent the AlXN layer in the areas adjacent to the channel access regions. The concentration of Al in the AlXN layer, the AlXN layer thickness and the n-doping concentration in the n-doped GaN layer are selected to induce a 2DEG charge in channel access regions without inducing any substantial 2DEG charge beneath the gate, so that the channel is not conductive in the absence of a switching voltage applied to the gate.
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公开(公告)号：US09196716B2
公开(公告)日：2015-11-24
申请号：US14464639
申请日：2014-08-20
Applicant: Transphorm Inc.
Inventor： Umesh Mishra , Robert Coffie , Likun Shen , Ilan Ben-Yaacov , Primit Parikh
IPC: H01L29/66 , H01L29/778 , H01L29/20 , H01L29/36 , H01L29/423 , H01L29/08 , H01L29/10
CPC classification number: H01L29/7784 , H01L21/0217 , H01L21/0254 , H01L29/0847 , H01L29/1033 , H01L29/2003 , H01L29/205 , H01L29/207 , H01L29/365 , H01L29/4236 , H01L29/518 , H01L29/66431 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L29/7788
Abstract: A III-N semiconductor device that includes a substrate and a nitride channel layer including a region partly beneath a gate region, and two channel access regions on opposite sides of the part beneath the gate. The channel access regions may be in a different layer from the region beneath the gate. The device includes an AlXN layer adjacent the channel layer wherein X is gallium, indium or their combination, and a preferably n-doped GaN layer adjacent the AlXN layer in the areas adjacent to the channel access regions. The concentration of Al in the AlXN layer, the AlXN layer thickness and the n-doping concentration in the n-doped GaN layer are selected to induce a 2DEG charge in channel access regions without inducing any substantial 2DEG charge beneath the gate, so that the channel is not conductive in the absence of a switching voltage applied to the gate.
Abstract translation: 一种III-N半导体器件，其包括衬底和包括部分在栅极区域下方的区域的氮化物沟道层，以及在栅极下方的部分的相对侧上的两个沟道存取区域。 通道接入区域可以在与栅极下方的区域不同的层中。 该器件包括与沟道层相邻的AlXN层，其中X是镓，铟或它们的组合，以及在与沟道接入区相邻的区域中与AlXN层相邻的优选n掺杂GaN层。 选择AlXN层中的Al的浓度，n掺杂GaN层中的AlXN层厚度和n掺杂浓度，以在沟道接入区域中引起2DEG电荷，而不在栅极下方引起任何实质的2DEG电荷，使得 在没有施加到栅极的开关电压的情况下，通道不导通。
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