公开(公告)号：US10714187B2

公开(公告)日：2020-07-14

申请号：US16679476

申请日：2019-11-11

Applicant: RAYMX Microelectronics Corp.

Inventor： Yi-Lin Hsieh ,  Jing-Long Xiao ,  Cheng-Yu Chen ,  Wang-Sheng Lin

IPC: G11C7/00 ,  G11C16/14 ,  G11C16/32

Abstract: A memory control device includes a memory and a controller. The memory includes a plurality of memory blocks. The controller is coupled to the memory and configured to select a first memory block from the memory blocks and program data into the first memory block. When the memory control device is deactivated and re-activated, the controller is further configured to read a voltage distribution of the first memory block to determine a deactivation interval, and determine a reference time according to the deactivation interval and an initial time, and the voltage distribution of the first memory block correspond to the data.

公开(公告)号：US10566065B2

公开(公告)日：2020-02-18

申请号：US16136492

申请日：2018-09-20

Applicant: RayMX Microelectronics, Corp.

Inventor： Yi-Lin Hsieh ,  Jing-Long Xiao ,  Cheng-Yu Chen ,  Wang-Sheng Lin

IPC: G11C8/00 ,  G11C16/32 ,  G11C16/26 ,  G11C16/16

Abstract: A memory control device includes a memory and a controller. The memory includes a plurality of memory blocks. The controller is coupled to the memory and configured to select a first memory block from the memory blocks and program data into the first memory block. When the memory control device is deactivated and re-activated, the controller is further configured to read a voltage distribution of the first memory block to determine a deactivation interval, and determine a reference time according to the deactivation interval and an initial time, and the voltage distribution of the first memory block correspond to the data.