Invention Grant
- Patent Title: Memory control device and memory control method
-
Application No.: US16136492Application Date: 2018-09-20
-
Publication No.: US10566065B2Publication Date: 2020-02-18
- Inventor: Yi-Lin Hsieh , Jing-Long Xiao , Cheng-Yu Chen , Wang-Sheng Lin
- Applicant: RayMX Microelectronics, Corp.
- Applicant Address: CN Hefei, Anhui Province
- Assignee: RAYMX MICROELECTRONICS CORP.
- Current Assignee: RAYMX MICROELECTRONICS CORP.
- Current Assignee Address: CN Hefei, Anhui Province
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW107101095A 20180111
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C16/32 ; G11C16/26 ; G11C16/16

Abstract:
A memory control device includes a memory and a controller. The memory includes a plurality of memory blocks. The controller is coupled to the memory and configured to select a first memory block from the memory blocks and program data into the first memory block. When the memory control device is deactivated and re-activated, the controller is further configured to read a voltage distribution of the first memory block to determine a deactivation interval, and determine a reference time according to the deactivation interval and an initial time, and the voltage distribution of the first memory block correspond to the data.
Public/Granted literature
- US20190214099A1 MEMORY CONTROL DEVICE AND MEMORY CONTROL METHOD Public/Granted day:2019-07-11
Information query