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    Light Emitting Diode (LED) using Three-Dimensional Gallium Nitride (GaN) Pillar Structures
    4.
    发明申请
    Light Emitting Diode (LED) using Three-Dimensional Gallium Nitride (GaN) Pillar Structures 有权
    发光二极管（LED）使用三维氮化镓（GaN）柱结构

    公开(公告)号：US20140077158A1

    公开(公告)日：2014-03-20

    申请号：US14088374

    申请日：2013-11-23

    Applicant: Sharp Laboratories of America, Inc.

    Inventor： Mark Albert Crowder ,  Changqing Zhan ,  Paul J. Schuele

    IPC: H01L33/04 ,  H01L33/32 ,  H01L33/00

    CPC classification number: H01L33/32 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42 ,  H01L2933/0008 ,  H01L2933/0016

    Abstract: A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.

    Abstract translation: 提供了一种使用具有平面表面的三维氮化镓（GaN）柱结构来制造发光二极管（LED）的方法。 该方法形成多个GaN柱结构，每个GaN柱结构均具有n个掺杂的GaN（n-GaN）柱和垂直于c平面的平面侧壁，形成在m面或平面系列中。 形成覆盖在n-GaN支柱侧壁上的多量子阱（MQW）层，并且在MQW层上形成一层p掺杂的GaN（p-GaN）层。 多个GaN柱结构沉积在第一衬底上，其中n掺杂的GaN柱侧壁平行于第一衬底的顶表面排列。 每个GaN柱结构的第一端连接到第一金属层。 蚀刻每个GaN柱结构的第二端以暴露n-GaN柱的第二端并连接到第二金属层。

    Counterbore Pocket Structure for Fluidic Assembly
    7.
    发明申请
    Counterbore Pocket Structure for Fluidic Assembly 审中-公开
    用于流体组装的沉头孔口结构

    公开(公告)号：US20150155445A1

    公开(公告)日：2015-06-04

    申请号：US14530230

    申请日：2014-10-31

    Applicant: Sharp Laboratories of America, Inc.

    Inventor： Changqing Zhan ,  Mark Albert Crowder ,  Paul John Schuele

    IPC: H01L33/48 ,  H01L33/00

    CPC classification number: H01L33/005 ,  H01L24/95 ,  H01L25/0753 ,  H01L33/0095 ,  H01L2224/95085 ,  H01L2224/95136 ,  H01L2924/10156 ,  H01L2924/12041 ,  H01L2933/0033 ,  H01L2924/00012

    Abstract: A fluidic assembly method is provided that uses a counterbore pocket structure. The method is based upon the use of a substrate with a plurality of counterbore pocket structures formed in the top surface, with each counterbore pocket structure having a through-hole to the substrate bottom surface. The method flows an ink with a plurality of objects over the substrate top surface. As noted above, the objects may be micro-objects in the shape of a disk. For example, the substrate may be a transparent substrate and the disks may be light emitting diode (LED) disks. Simultaneously, a suction pressure is created at the substrate bottom surface. In response to the suction pressure from the through-holes, the objects are drawn into the counterbore pocket structures. Also provided is a related fluidic substrate assembly.

    Abstract translation: 提供一种使用沉孔袋结构的流体组装方法。 该方法基于使用具有形成在顶表面中的多个沉孔袋结构的基底，每个沉孔袋结构具有到基底底表面的通孔。 该方法将具有多个物体的油墨流过基板顶表面。 如上所述，物体可以是圆盘形状的微型物体。 例如，衬底可以是透明衬底，并且盘可以是发光二极管（LED）盘。 同时，在基板底面产生吸入压力。 响应于来自通孔的吸入压力，物体被吸入沉孔袋结构中。 还提供了相关的流体基底组件。

    Fluidic assembly top-contact LED disk
    8.
    发明授权
    Fluidic assembly top-contact LED disk 有权

    公开(公告)号：US10115862B2

    公开(公告)日：2018-10-30

    申请号：US14680618

    申请日：2015-04-07

    Applicant: Sharp Laboratories of America, Inc.

    Inventor： Changqing Zhan ,  Paul John Schuele ,  Mark Albert Crowder ,  Sean Mathew Garner ,  Timothy James Kiczenski

    IPC: H01L33/32 ,  H01L33/20 ,  H01L33/00 ,  H01L25/075

    Abstract: A method is provided for forming a direct emission display. The method provides a transparent substrate with an array of wells formed in its top surface. A fluid stream is supplied to the substrate top surface comprising a plurality of top-contact light emitting diode (LED) disks. The wells are filled with the LED disks. A first array of electrically conductive lines is formed over the substrate top surface to connect with a first contact of each LED disk, and a second array of electrically conductive lines is formed over the substrate top surface to connect with a second contact of each LED disk. An insulator over the disk exposes an upper disk (e.g., p-doped) contact region. A via is formed through the disk, exposing a center contact region of a lower (e.g., n-doped) disk contact region. Also provided are a top-contact LED disk and direct emission display.

    Three-dimensional gallium nitride (GaN) pillar structure light emitting diode (LED)
    10.
    发明授权
    Three-dimensional gallium nitride (GaN) pillar structure light emitting diode (LED) 有权
    三维氮化镓（GaN）柱结构发光二极管（LED）

    公开(公告)号：US09252328B2

    公开(公告)日：2016-02-02

    申请号：US14671793

    申请日：2015-03-27

    Applicant: Sharp Laboratories of America, Inc.

    Inventor： Mark Albert Crowder ,  Changqing Zhan ,  Paul J. Schuele

    IPC: H01L33/24 ,  H01L33/18 ,  H01L33/32 ,  H01L33/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/08 ,  H01L33/42

    CPC classification number: H01L33/32 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42 ,  H01L2933/0008 ,  H01L2933/0016

    Abstract: A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.

    Abstract translation: 提供了一种使用具有平面表面的三维氮化镓（GaN）柱结构来制造发光二极管（LED）的方法。 该方法形成多个GaN柱结构，每个GaN柱结构均具有n个掺杂的GaN（n-GaN）柱和垂直于c平面的平面侧壁，形成在m面或平面系列中。 形成覆盖在n-GaN支柱侧壁上的多量子阱（MQW）层，并且在MQW层上形成一层p掺杂的GaN（p-GaN）层。 多个GaN柱结构沉积在第一衬底上，其中n掺杂的GaN柱侧壁平行于第一衬底的顶表面排列。 每个GaN柱结构的第一端连接到第一金属层。 蚀刻每个GaN柱结构的第二端以暴露n-GaN柱的第二端并连接到第二金属层。

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