-
公开(公告)号：US10475958B2
公开(公告)日：2019-11-12
申请号：US15674339
申请日：2017-08-10
Applicant: Sharp Laboratories of America, Inc.
Inventor： Changqing Zhan , Paul John Schuele , Mark Albert Crowder , Sean Mathew Garner , Timothy James Kiczenski
IPC: H01L33/20 , H01L33/00 , H01L25/075 , H01L33/32
Abstract: Embodiments are related to systems and methods for forming and using a top-contact disk.
-
公开(公告)号：US09892944B2
公开(公告)日：2018-02-13
申请号：US15190813
申请日：2016-06-23
Applicant: Sharp Laboratories of America, Inc.
Inventor： Paul John Schuele , David Robert Heine , Mark Albert Crowder , Sean Mathew Garner , Changqing Zhan , Avinash Tukaram Shinde , Kenji Alexander Sasaki , Kurt Michael Ulmer
IPC: H01L29/06 , H01L21/67 , H01L33/20 , H01L21/673
CPC classification number: H01L21/67121 , H01L21/67333 , H01L29/0657 , H01L33/20 , H01L2224/95085
Abstract: Embodiments are related to systems and methods for fluidic assembly, and more particularly to systems and methods for assuring deposition of elements in relation to a substrate.
-
公开(公告)号：US20170338389A1
公开(公告)日：2017-11-23
申请号：US15158556
申请日：2016-05-18
Applicant: Sharp Laboratories of America, Inc.
Inventor： Changqing Zhan , Mark Albert Crowder , Paul John Schuele
CPC classification number: H01L33/62 , H01L24/98 , H01L33/0095 , H01L33/06 , H01L33/20 , H01L2933/0033 , H01L2933/0066
Abstract: Embodiments are related to systems and methods for fluidic assembly, and more particularly to diodes offering orientation control properties in a fluidic assembly system.
-
4.发明申请Light Emitting Diode (LED) using Three-Dimensional Gallium Nitride (GaN) Pillar Structures 有权发光二极管（LED）使用三维氮化镓（GaN）柱结构公开(公告)号：US20140077158A1
公开(公告)日：2014-03-20
申请号：US14088374
申请日：2013-11-23
Applicant: Sharp Laboratories of America, Inc.
Inventor： Mark Albert Crowder , Changqing Zhan , Paul J. Schuele
CPC classification number: H01L33/32 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/42 , H01L2933/0008 , H01L2933/0016
Abstract: A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.
Abstract translation: 提供了一种使用具有平面表面的三维氮化镓（GaN）柱结构来制造发光二极管（LED）的方法。 该方法形成多个GaN柱结构，每个GaN柱结构均具有n个掺杂的GaN（n-GaN）柱和垂直于c平面的平面侧壁，形成在m面或平面系列中。 形成覆盖在n-GaN支柱侧壁上的多量子阱（MQW）层，并且在MQW层上形成一层p掺杂的GaN（p-GaN）层。 多个GaN柱结构沉积在第一衬底上，其中n掺杂的GaN柱侧壁平行于第一衬底的顶表面排列。 每个GaN柱结构的第一端连接到第一金属层。 蚀刻每个GaN柱结构的第二端以暴露n-GaN柱的第二端并连接到第二金属层。
-
公开(公告)号：US10115862B2
公开(公告)日：2018-10-30
申请号：US14680618
申请日：2015-04-07
Applicant: Sharp Laboratories of America, Inc.
Inventor： Changqing Zhan , Paul John Schuele , Mark Albert Crowder , Sean Mathew Garner , Timothy James Kiczenski
IPC: H01L33/32 , H01L33/20 , H01L33/00 , H01L25/075
Abstract: A method is provided for forming a direct emission display. The method provides a transparent substrate with an array of wells formed in its top surface. A fluid stream is supplied to the substrate top surface comprising a plurality of top-contact light emitting diode (LED) disks. The wells are filled with the LED disks. A first array of electrically conductive lines is formed over the substrate top surface to connect with a first contact of each LED disk, and a second array of electrically conductive lines is formed over the substrate top surface to connect with a second contact of each LED disk. An insulator over the disk exposes an upper disk (e.g., p-doped) contact region. A via is formed through the disk, exposing a center contact region of a lower (e.g., n-doped) disk contact region. Also provided are a top-contact LED disk and direct emission display.
-
Patent Agency Ranking
公开(公告)号：US20170352799A1
公开(公告)日：2017-12-07
申请号：US15171521
申请日：2016-06-02
Applicant: Sharp Laboratories of America, Inc.
Inventor： Mark Albert Crowder , Changqing Zhan , Karen Nishimura , Paul Schuele
IPC: H01L41/332 , H01L41/314 , H01L41/297 , H01L41/193 , H01L41/187
CPC classification number: H01L41/332 , H01L41/1871 , H01L41/1873 , H01L41/1876 , H01L41/193 , H01L41/297 , H01L41/314
Abstract: A method is provided for fabricating piezoelectric plates. A sacrificial layer is formed overlying a growth substrate. A template layer, with openings exposing sacrificial layer surfaces, is formed over the sacrificial layer. An adhesion layer/first electrode stack is selectively deposited in the openings overlying the sacrificial layer surfaces, and a piezoelectric material formed in the openings overlying the stack. Then, a second electrode is formed overlying the piezoelectric material. Using the second electrode as a hardmask, the piezoelectric material is etched to form polygon-shaped structures, such as disks, attached to the sacrificial layer surfaces. After removing the template layer and annealing, the polygon-shaped structures are separated from the sacrificial layer. With the proper choice of growth substrate material, the annealing can be performed at a relatively high temperature.
-
公开(公告)号：US20170229630A1
公开(公告)日：2017-08-10
申请号：US15017609
申请日：2016-02-06
Applicant: Sharp Laboratories of America, Inc.
Inventor： Changqing Zhan , Wei Pan , Hao-Chih Yuan
CPC classification number: H01L37/02 , H01L41/113 , H01L41/1136 , H02N1/08 , H02N2/18 , H02N3/00
Abstract: A bi-stable micro-electrical mechanical system (MEMS) heat harvester is provided. A bi-stable MEMS cantilever located between a hot temperature surface and a cold temperature surface, and is made up of a first MEMS material layer, having a first coefficient of thermal expansion. A second MEMS material layer is in contact with the first MEMS material layer, and has a second coefficient of thermal expansion less than the first coefficient of thermal expansion. A tensioner, made from a material having a tensile stress greater than the stress of the first or second MEMS materials, is connected to the cantilever. The heat harvester also includes a mechanical-to-electrical power converter, which may be a piezoelectric device or an electret device. The bi-stable MEMS cantilever may include a thermal expander having a coefficient of thermal expansion greater than the second coefficient of thermal expansion. The thermal expander is connected to the tensioner.
-
8.发明授权Three-dimensional gallium nitride (GaN) pillar structure light emitting diode (LED) 有权三维氮化镓（GaN）柱结构发光二极管（LED）公开(公告)号：US09252328B2
公开(公告)日：2016-02-02
申请号：US14671793
申请日：2015-03-27
Applicant: Sharp Laboratories of America, Inc.
Inventor： Mark Albert Crowder , Changqing Zhan , Paul J. Schuele
CPC classification number: H01L33/32 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/42 , H01L2933/0008 , H01L2933/0016
Abstract: A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.
Abstract translation: 提供了一种使用具有平面表面的三维氮化镓（GaN）柱结构来制造发光二极管（LED）的方法。 该方法形成多个GaN柱结构，每个GaN柱结构均具有n个掺杂的GaN（n-GaN）柱和垂直于c平面的平面侧壁，形成在m面或平面系列中。 形成覆盖在n-GaN支柱侧壁上的多量子阱（MQW）层，并且在MQW层上形成一层p掺杂的GaN（p-GaN）层。 多个GaN柱结构沉积在第一衬底上，其中n掺杂的GaN柱侧壁平行于第一衬底的顶表面排列。 每个GaN柱结构的第一端连接到第一金属层。 蚀刻每个GaN柱结构的第二端以暴露n-GaN柱的第二端并连接到第二金属层。
-
9.发明申请Three-Dimensional Gallium Nitride (GaN) Pillar Structure Light Emitting Diode (LED) 有权三维氮化镓（GaN）柱结构发光二极管（LED）公开(公告)号：US20150221827A1
公开(公告)日：2015-08-06
申请号：US14671793
申请日：2015-03-27
Applicant: Sharp Laboratories of America, Inc.
Inventor： Mark Albert Crowder , Changqing Zhan , Paul J. Schuele
CPC classification number: H01L33/32 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/24 , H01L33/42 , H01L2933/0008 , H01L2933/0016
Abstract: A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.
Abstract translation: 提供了一种使用具有平面表面的三维氮化镓（GaN）柱结构来制造发光二极管（LED）的方法。 该方法形成多个GaN柱结构，每个GaN柱结构均具有n个掺杂的GaN（n-GaN）柱和垂直于c面的平面侧壁，形成在m面或平面系列中。 形成覆盖在n-GaN支柱侧壁上的多量子阱（MQW）层，并且在MQW层上形成一层p掺杂的GaN（p-GaN）层。 多个GaN柱结构沉积在第一衬底上，其中n掺杂的GaN柱侧壁平行于第一衬底的顶表面排列。 每个GaN柱结构的第一端连接到第一金属层。 蚀刻每个GaN柱结构的第二端以暴露n-GaN柱的第二端并连接到第二金属层。
-
公开(公告)号：US20150214430A1
公开(公告)日：2015-07-30
申请号：US14680618
申请日：2015-04-07
Applicant: Sharp Laboratories of America, Inc.
Inventor： Changqing Zhan , Paul John Schuele , Mark Albert Crowder
CPC classification number: H01L33/20 , H01L25/0753 , H01L33/005 , H01L33/32 , H01L2924/0002 , H01L2933/0033 , H01L2924/00
Abstract: A method is provided for forming a direct emission display. The method provides a transparent substrate with an array of wells formed in its top surface. A fluid stream is supplied to the substrate top surface comprising a plurality of top-contact light emitting diode (LED) disks. The wells are filled with the LED disks. A first array of electrically conductive lines is formed over the substrate top surface to connect with a first contact of each LED disk, and a second array of electrically conductive lines is formed over the substrate top surface to connect with a second contact of each LED disk. An insulator over the disk exposes an upper disk (e.g., p-doped) contact region. A via is formed through the disk, exposing a center contact region of a lower (e.g., n-doped) disk contact region. Also provided are a top-contact LED disk and direct emission display.
Abstract translation: 提供一种用于形成直接发射显示的方法。 该方法提供了在其顶表面中形成的阱阵列的透明基底。 流体流被供应到包括多个顶部接触发光二极管（LED）盘的衬底顶表面。 井中充满了LED盘。 第一阵列的导电线形成在衬底顶表面上以与每个LED盘的第一接触件连接，并且第二阵列的导电线形成在衬底顶表面上以与每个LED盘的第二接触件连接 。 盘上的绝缘体暴露了上盘（例如，p掺杂的）接触区域。 通孔通过盘形成，暴露下（例如，n掺杂）盘接触区域的中心接触区域。 还提供了顶部接触的LED盘和直接发射显示器。
-
-
-
-
-
-
-
-
-
Search Results
27
records
(took 0.021 seconds)
