公开(公告)号：US20190393874A1

公开(公告)日：2019-12-26

申请号：US16564850

申请日：2019-09-09

Applicant: Power Integrations, Inc.

Inventor： Hartley Horwitz ,  Sorin Georgescu ,  Kuo-Chang Robert Yang

IPC: H03K17/567 ,  H03K5/08 ,  H01L29/06 ,  H01L29/866 ,  H03K17/081

Abstract: A switch having a drain, a source, and a control. The switch comprising a depletion-mode transistor including a first, a second, and a control terminal and an enhancement-mode transistor including a first, a second, and a control terminal. The first terminal of the depletion-mode transistor is the drain of the switch and the control of the depletion-mode transistor is coupled to the source of the switch. The control of the enhancement-mode transistor is coupled to the control of the switch, the second terminal of the enhancement-mode transistor is the source of the switch. The switch comprises a clamp circuit to clamp a voltage of the first terminal of the enhancement-mode transistor to a threshold, the clamp circuit comprises a resistor and a pn-junction device coupled between the first and second terminals of the enhancement-mode transistor and between the second terminal and the control of the depletion-mode transistor.

公开(公告)号：US10763852B2

公开(公告)日：2020-09-01

申请号：US16564850

申请日：2019-09-09

Applicant: Power Integrations, Inc.

Inventor： Hartley Horwitz ,  Sorin Georgescu ,  Kuo-Chang Robert Yang

IPC: H01L29/06 ,  H03K17/567 ,  H03K5/08 ,  H01L29/866 ,  H03K17/081

Abstract: A switch having a drain, a source, and a control. The switch comprising a depletion-mode transistor including a first, a second, and a control terminal and an enhancement-mode transistor including a first, a second, and a control terminal. The first terminal of the depletion-mode transistor is the drain of the switch and the control of the depletion-mode transistor is coupled to the source of the switch. The control of the enhancement-mode transistor is coupled to the control of the switch, the second terminal of the enhancement-mode transistor is the source of the switch. The switch comprises a clamp circuit to clamp a voltage of the first terminal of the enhancement-mode transistor to a threshold, the clamp circuit comprises a resistor and a pn-junction device coupled between the first and second terminals of the enhancement-mode transistor and between the second terminal and the control of the depletion-mode transistor.

公开(公告)号：US20190123738A1

公开(公告)日：2019-04-25

申请号：US16220684

申请日：2018-12-14

Applicant: Power Integrations, Inc.

Inventor： Hartley Horwitz ,  Sorin Georgescu ,  Kuo-Chang Robert Yang

IPC: H03K17/567 ,  H03K17/081 ,  H03K5/08 ,  H01L29/06 ,  H01L29/866

CPC classification number: H03K17/567 ,  H01L29/0619 ,  H01L29/866 ,  H03K5/08 ,  H03K17/08116

Abstract: A switch having a drain terminal, a source terminal and a control terminal. The switch comprises a normally-on device including a first terminal, a second terminal, and a control terminal, a normally-off device including a first terminal, a second terminal, and a control terminal, and a clamp circuit. The first terminal of the normally-on device is the drain terminal of the switch and the control terminal of the normally-on device is coupled to the source terminal of the switch. The control terminal of the normally-off device is coupled to the control terminal of the switch. The second terminal of the normally-off device is the source terminal of the switch, and the first terminal of the normally-off device is coupled to the second terminal of the normally-on device. The clamp circuit coupled across the normally-off device and comprises a first transistor coupled to the first terminal of the normally-off device.

公开(公告)号：US20180262190A1

公开(公告)日：2018-09-13

申请号：US15977689

申请日：2018-05-11

Applicant: Power Integrations, Inc.

Inventor： Hartley Horwitz ,  Sorin Georgescu ,  Kuo-Chang Robert Yang

IPC: H03K17/567 ,  H01L29/866 ,  H01L29/06 ,  H03K5/08

CPC classification number: H03K17/567 ,  H01L29/0619 ,  H01L29/866 ,  H03K5/08 ,  H03K17/08116

Abstract: A switch having a first terminal, a second terminal and a control terminal. The switch includes a normally-on device with a first terminal, a second terminal, and a control terminal. The first terminal of the normally-on device is the first terminal of the switch. The control terminal of the normally-on device is coupled to the second terminal of the switch. A normally-off device includes a first terminal, a second terminal, and a control terminal. The control terminal of the normally-off device is coupled to the control terminal of the switch. The second terminal of the normally off-device is the second terminal of the switch. The first terminal of the normally-off device is coupled to the second terminal of the normally-on device. A clamp circuit is coupled across the normally-off device. The clamp circuit is coupled to clamp a voltage of the first terminal of the normally-off device to a threshold.

公开(公告)号：US11824094B2

公开(公告)日：2023-11-21

申请号：US17913673

申请日：2021-03-25

Applicant: Power Integrations, Inc.

Inventor： Kuo-Chang Robert Yang ,  Kamal Raj Varadarajan ,  Sorin S. Georgescu

IPC: H01L29/10 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/1066 ,  H01L29/1058 ,  H01L29/1608 ,  H01L29/66068

Abstract: Silicon carbide (SiC) junction field effect transistors (JFETs) are presented herein. A deep implant (e.g., a deep p-type implant) forms a JFET gate (106). MET gate and MET source (108) may be implemented with heavily doped n-type (N+) and heavily doped p-type (P+) implants, respectively. Termination regions may be implemented by using equipotential rings formed by deep implants (e.g., deep p-type implants).

公开(公告)号：US20200350908A1

公开(公告)日：2020-11-05

申请号：US16935642

申请日：2020-07-22

Applicant: Power Integrations, Inc.

Inventor： Hartley Horwitz ,  Sorin Georgescu ,  Kuo-Chang Robert Yang

IPC: H03K17/567 ,  H03K5/08 ,  H01L29/06 ,  H01L29/866 ,  H03K17/081

Abstract: A switch having a drain, a source, and a control. The switch comprising a depletion-mode transistor including a first, a second, and a control terminal and an enhancement-mode transistor including a first, a second, and a control terminal. The first terminal of the depletion-mode transistor is the drain of the switch and the control of the depletion-mode transistor is coupled to the source of the switch. The control of the enhancement-mode transistor is coupled to the control of the switch, the second terminal of the enhancement-mode transistor is the source of the switch. The switch comprises a clamp circuit to clamp a voltage of the first terminal of the enhancement-mode transistor to a threshold, the clamp circuit comprises a resistor and a pn-junction device coupled between the first and second terminals of the enhancement-mode transistor and between the second terminal and the control of the depletion-mode transistor.

公开(公告)号：US09871510B1

公开(公告)日：2018-01-16

申请号：US15246395

申请日：2016-08-24

Applicant: Power Integrations, Inc.

Inventor： Hartley Horwitz ,  Sorin Georgescu ,  Kuo-Chang Robert Yang

IPC: H03K17/687 ,  H03K17/567 ,  H03K5/08 ,  H01L29/06 ,  H01L29/866

CPC classification number: H03K17/567 ,  H01L29/0619 ,  H01L29/866 ,  H03K5/08 ,  H03K17/08116

Abstract: A cascode switch circuit includes a normally-on device cascode coupled to a normally-of device between first and second terminals of the cascode switch circuit. A leakage clamp circuit is coupled between first and second terminals of the normally-off device. The leakage clamp circuit is coupled to clamp a voltage at an intermediate terminal between the normally-on device and the normally-off device at a threshold voltage level. The leakage clamp circuit is further coupled to clamp a voltage between the second terminal of the normally-on device and the control terminal of the normally-on device at the threshold voltage level to keep the normally-on device off when the normally-on device and the normally-off device are off.

公开(公告)号：US09543396B2

公开(公告)日：2017-01-10

申请号：US14520527

申请日：2014-10-22

Applicant: Power Integrations, Inc.

Inventor： Sorin Stefan Georgescu ,  Wayne Byran Grabowski ,  Kamal Raj Varadarajan ,  Lin Zhu ,  Kuo-Chang Robert Yang

IPC: H01L29/66 ,  H01L29/40 ,  H01L29/423 ,  H01L29/06 ,  H01L29/78 ,  H01L29/739

CPC classification number: H01L29/407 ,  H01L29/0696 ,  H01L29/4238 ,  H01L29/66666 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7827

Abstract: A vertical power transistor device includes a semiconductor layer of a first conductivity type, with a plurality of cylindrically-shaped dielectric regions disposed in the semiconductor layer. The cylindrically-shaped dielectric regions extend in a vertical direction from a top surface of the semiconductor layer downward. Adjacent ones of the cylindrically-shaped dielectric regions being laterally separated along a common diametrical axis by a narrow region of the semiconductor layer having a first width. Each dielectric region has a cylindrically-shaped, conductive field plate member centrally disposed therein. The cylindrically-shaped, conductive field plate member extends in the vertical direction from the top surface downward to near a bottom of the dielectric region. The dielectric region laterally separates the cylindrically-shaped, conductive field plate member from the narrow region. A source region is disposed at the top surface, and a drain region is disposed at the bottom, of the semiconductor layer.

Abstract translation: 垂直功率晶体管器件包括第一导电类型的半导体层，其中多个圆柱形介质区域设置在半导体层中。 圆柱形电介质区域在垂直方向上从半导体层的顶表面向下延伸。 相邻的圆柱形电介质区域沿着公共直径轴线横向分离具有第一宽度的半导体层的窄区域。 每个电介质区域具有中心设置在其中的圆柱形导电场板构件。 圆柱形的导电场板构件在垂直方向上从顶表面向下延伸到接近电介质区域的底部。 电介质区域将圆柱形的导电场板构件与狭窄区域横向分离。 源区域设置在顶表面处，并且漏极区域设置在半导体层的底部。

公开(公告)号：US11025249B2

公开(公告)日：2021-06-01

申请号：US16935642

申请日：2020-07-22

Applicant: Power Integrations, Inc.

Inventor： Hartley Horwitz ,  Sorin Georgescu ,  Kuo-Chang Robert Yang

IPC: H03K17/081 ,  H01L29/20 ,  H03K17/567 ,  H03K5/08 ,  H01L29/06 ,  H01L29/866

Abstract: A switch having a drain, a source, and a control. The switch comprising a depletion-mode transistor including a first, a second, and a control terminal and an enhancement-mode transistor including a first, a second, and a control terminal. The first terminal of the depletion-mode transistor is the drain of the switch and the control of the depletion-mode transistor is coupled to the source of the switch. The control of the enhancement-mode transistor is coupled to the control of the switch, the second terminal of the enhancement-mode transistor is the source of the switch. The switch comprises a clamp circuit to clamp a voltage of the first terminal of the enhancement-mode transistor to a threshold, the clamp circuit comprises a resistor and a pn-junction device coupled between the first and second terminals of the enhancement-mode transistor and between the second terminal and the control of the depletion-mode transistor.

公开(公告)号：US10187054B2

公开(公告)日：2019-01-22

申请号：US15977689

申请日：2018-05-11

Applicant: Power Integrations, Inc.

Inventor： Hartley Horwitz ,  Sorin Georgescu ,  Kuo-Chang Robert Yang

IPC: H01L29/66 ,  H03K17/567 ,  H01L29/866 ,  H03K5/08 ,  H01L29/06

Abstract: A switch having a first terminal, a second terminal and a control terminal. The switch includes a normally-on device with a first terminal, a second terminal, and a control terminal. The first terminal of the normally-on device is the first terminal of the switch. The control terminal of the normally-on device is coupled to the second terminal of the switch. A normally-off device includes a first terminal, a second terminal, and a control terminal. The control terminal of the normally-off device is coupled to the control terminal of the switch. The second terminal of the normally off-device is the second terminal of the switch. The first terminal of the normally-off device is coupled to the second terminal of the normally-on device. A clamp circuit is coupled across the normally-off device. The clamp circuit is coupled to clamp a voltage of the first terminal of the normally-off device to a threshold.