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    Ultra thin hit solar cell and fabricating method of the same
    1.
    发明授权
    Ultra thin hit solar cell and fabricating method of the same 有权
    超薄太阳能电池及其制造方法相同

    公开(公告)号：US09252316B2

    公开(公告)日：2016-02-02

    申请号：US14676075

    申请日：2015-04-01

    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH

    Inventor： Jun Sik Cho ,  Jin Su Yoo ,  Joo Hyung Park ,  Jae Ho Yun ,  Jihye Gwak ,  SeoungKyu Ahn ,  Young Joo Eo ,  SeJin Ahn ,  Ara Cho ,  Kihwan Kim ,  Kyung Hoon Yoon ,  Kee Shik Shin

    IPC: H01L31/0747 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0236

    CPC classification number: H01L31/0747 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/1804 ,  H01L31/1868 ,  H01L31/1884 ,  Y02E10/50

    Abstract: Disclosed is an ultra-thin HIT solar cell, including: an n- or p-type crystalline silicon substrate; an amorphous silicon emitter layer having a doping type different from that of the silicon substrate; and an intrinsic amorphous silicon passivation layer formed between the crystalline silicon substrate and the amorphous silicon emitter layer, wherein the HIT solar cell further includes a transparent conductive oxide layer made of ZnO on an upper surface thereof, and the surface of the crystalline silicon substrate is not textured but only the surface of the transparent conductive oxide layer is textured, and thereby a very thin crystalline silicon substrate can be used, ultimately achieving an ultra-thin HIT solar cell having a very low total thickness while maintaining light trapping capacity.

    Abstract translation: 公开了一种超薄HIT太阳能电池，包括：n型或p型晶体硅衬底; 具有不同于硅衬底的掺杂类型的非晶硅发射极层; 以及在所述晶体硅衬底和所述非晶硅发射极层之间形成的本征非晶硅钝化层，其中所述HIT太阳能电池还包括在其上表面上由ZnO制成的透明导电氧化物层，并且所述晶体硅衬底的表面为 不织构化，但只有透明导电氧化物层的表面被纹理化，从而可以使用非常薄的晶体硅衬底，最终实现具有非常低的总厚度的超薄HIT太阳能电池，同时保持光捕获能力。

    METHOD OF FORMING CIGS ABSORBER LAYER FOR SOLAR CELL AND CIGS SOLAR CELL
    2.
    发明申请
    METHOD OF FORMING CIGS ABSORBER LAYER FOR SOLAR CELL AND CIGS SOLAR CELL 审中-公开
    形成太阳能电池和CIGS太阳能电池的CIGS吸收层的方法

    公开(公告)号：US20150303328A1

    公开(公告)日：2015-10-22

    申请号：US14364886

    申请日：2013-07-10

    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH

    Inventor： Jae Ho Yun ,  Jihye Gwak ,  SeJin Ahn ,  Kyung Hoon Yoon ,  Kee Shik Shin ,  SeoungKyu Ahn ,  Ara Cho ,  Sang Hyun Park ,  Hisun Park ,  Sung Woo Choi

    IPC: H01L31/032 ,  H01L31/18

    CPC classification number: H01L31/0322 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541

    Abstract: A method of forming a CIGS absorber layer using a three-stage co-evaporation process, which can improve the efficiency of a solar cell in the case where Na concentration of a substrate is low and thus the depletion layer of the CIGS absorber layer is thick. The method includes a first stage of co-evaporating In, Ga and Se to deposit them; a second stage of co-evaporating Cu and Se to deposit them; and a third stage of co-evaporating In, Ga and Se to deposit them, wherein Ga supply through evaporation in the first stage is greater than Ga supply through evaporation in the third stage.

    Abstract translation: 使用三级共蒸发法形成CIGS吸收层的方法，其可以在衬底的Na浓度低并且因此CIGS吸收层的耗尽层厚的情况下提高太阳能电池的效率 。 该方法包括使In，Ga和Se共蒸发沉积的第一阶段; 共蒸发Cu和Se以沉积它们的第二阶段; 以及共蒸发In，Ga和Se以沉积它们的第三阶段，其中在第一阶段中通过蒸发的Ga供应通过第三阶段中的蒸发大于Ga供应。

    Method of fabricating copper indium gallium selenide (CIGS) thin film for solar cell using simplified co-vacuum evaporation and copper indium gallium selenide (CIGS) thin film for solar cell fabricated by the same
    4.
    发明授权
    Method of fabricating copper indium gallium selenide (CIGS) thin film for solar cell using simplified co-vacuum evaporation and copper indium gallium selenide (CIGS) thin film for solar cell fabricated by the same 有权
    使用简化的共真空蒸发制造太阳能电池用铜铟镓硒（CIGS）薄膜的方法和由其制造的太阳能电池用铜铟镓硒（CIGS）薄膜

    公开(公告)号：US09472708B2

    公开(公告)日：2016-10-18

    申请号：US14364876

    申请日：2013-02-05

    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH

    Inventor： Jihye Gwak ,  Jae-Ho Yun ,  SeJin Ahn ,  Kyung Hoon Yoon ,  Kee Shik Shin ,  Guk-Yeong Jeong ,  SeoungKyu Ahn ,  Ara Cho ,  Hisun Park ,  Sung Woo Choi

    IPC: B05D5/12 ,  H01L31/18 ,  H01L31/032

    CPC classification number: H01L31/18 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

    Abstract: A method of fabricating a CIGS thin film for solar cells using a simplified co-vacuum evaporation process and a CIGS thin film fabricated by the method are disclosed. The method includes: (a) depositing Cu, Ga and Se on a substrate having a substrate temperature ranging from 500° C. to 600° C. through co-vacuum evaporation, (b) depositing Cu, Ga, Se and In through co-vacuum evaporation while maintaining the same substrate temperature as in step (a), and (c) depositing Ga and Se through co-vacuum evaporation, followed by depositing Se alone through vacuum evaporation while lowering the temperature of the substrate. The method can realize crystal growth and band-gap grading by Ga composition distribution while simplifying process steps and significantly reducing a film-deposition time, as compared with a conventional co-vacuum evaporation process, thereby providing improvement in process efficiency.

    Abstract translation: 公开了一种使用简化的共真空蒸发工艺制造太阳能电池的CIGS薄膜的方法和通过该方法制造的CIGS薄膜。 该方法包括：（a）通过共真空蒸发在Cu衬底温度为500℃至600℃的衬底上沉积Cu，Ga和Se，（b）沉积Cu，Ga，Se和In至Co - 真空蒸发，同时保持与步骤（a）相同的基板温度，和（c）通过共真空蒸发沉积Ga和Se，然后通过真空蒸发沉积Se，同时降低基板的温度。 与传统的共真空蒸发方法相比，该方法可以通过Ga组分分布实现晶体生长和带隙分级，同时简化工艺步骤并显着降低膜沉积时间，从而提高工艺效率。

    CIGS Solar Cell Having Flexible Substrate Based on Improved Supply of Na and Fabrication Method Thereof
    6.
    发明申请
    CIGS Solar Cell Having Flexible Substrate Based on Improved Supply of Na and Fabrication Method Thereof 审中-公开
    基于改进Na供应的柔性基板的CIGS太阳能电池及其制造方法

    公开(公告)号：US20150114466A1

    公开(公告)日：2015-04-30

    申请号：US14389884

    申请日：2013-08-05

    Applicant: Korea Institute of Energy Research

    Inventor： SeoungKyu Ahn ,  Kyung Hoon Yoon ,  Jae Ho Yun ,  Jun Sik Cho ,  SeJin Ahn ,  Jihye Gwak ,  Kee Shik Shin ,  Kihwan Kim ,  Joo Hyung Park ,  Young Joo Eo ,  Jin-Su Yoo ,  Ara Cho

    IPC: H01L31/0749 ,  H01L31/18

    CPC classification number: H01L31/0749 ,  H01L31/0322 ,  H01L31/03928 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

    Abstract: A CIGS solar cell having a flexible substrate based on improved supply of Na. The CIGS solar cell includes a substrate formed of a flexible material, a rear electrode formed on the substrate, a CIGS light-absorption layer formed on the rear electrode, a buffer layer formed on the CIGS light-absorption layer, and a front electrode formed on the buffer layer, wherein the rear electrode comprise a single-layered Na-added metal electrode layer. A single-layered Na-added Mo electrode layer, specific resistance of which is about 1/10th the specific resistance under conditions of a process of forming a typical multilayer rear electrode, is applied to the rear electrode, thereby providing a CIGS solar cell having a flexible substrate and high conversion efficiency.

    Abstract translation: 一种CIGS太阳能电池，其具有基于改进的Na供应的柔性基板。 CIGS太阳能电池包括由柔性材料形成的基板，形成在基板上的后电极，形成在后电极上的CIGS光吸收层，形成在CIGS光吸收层上的缓冲层和形成的前电极 在缓冲层上，其中后电极包括单层添加Na的金属电极层。 在形成典型的多层背面电极的工序的条件下，其电阻率为比电阻约1/10的单层添加Na的Mo电极层，由此提供CIGS太阳能电池，其具有 柔性基板和高转换效率。

    Method of forming chalcopyrite light-absorbing layer
    9.
    发明授权
    Method of forming chalcopyrite light-absorbing layer 有权
    形成黄铜矿光吸收层的方法

    公开(公告)号：US09437761B2

    公开(公告)日：2016-09-06

    申请号：US14780048

    申请日：2014-04-01

    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH

    Inventor： Young Joo Eo ,  Kyung Hoon Yoon ,  SeJin Ahn ,  Jihye Gwak ,  Jae Ho Yun ,  Ara Cho ,  Kee Shik Shin ,  SeoungKyu Ahn ,  Jun Sik Cho ,  Jin Su Yoo ,  Sang Hyun Park ,  Joo Hyung Park

    IPC: H01L21/00 ,  H01L31/032 ,  H01L31/0445 ,  H01L31/18

    CPC classification number: H01L31/0322 ,  H01L31/0445 ,  H01L31/18 ,  Y02E10/541

    Abstract: Disclosed is a method of forming a chalcopyrite light-absorbing layer for a solar cell, including: forming a thin film including a chalcopyrite compound precursor; and radiating light on the thin film, wherein the chalcopyrite compound precursor absorbs light energy and is thus crystallized. When forming the chalcopyrite light-absorbing layer, light, but not heat, is applied, thus preventing problems, including damage to a substrate due to heat and formation of MoSe2 due to heating of the Mo rear electrode. Furthermore, long-wavelength light, which deeply penetrates the thin film, is first radiated, and short-wavelength light, which shallowly penetrates the thin film, is subsequently radiated, thereby sequentially forming the chalcopyrite light-absorbing layer from the bottom of the thin film.

    Abstract translation: 公开了一种形成太阳能电池的黄铜矿光吸收层的方法，包括：形成包含黄铜矿化合物前体的薄膜; 并且在所述薄膜上照射光，其中所述黄铜矿化合物前体吸收光能并因此结晶。 当形成黄铜矿光吸收层时，施加光而不加热，从而防止由于Mo后电极的加热而由于热而导致基板损伤和形成MoSe2的问题。 此外，首先辐射深度穿透薄膜的长波长光，并且随后辐射浅穿透薄膜的短波长光，从而从薄的底部依次形成黄铜矿光吸收层 电影。

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