公开(公告)号：US20150303328A1

公开(公告)日：2015-10-22

申请号：US14364886

申请日：2013-07-10

Applicant: KOREA INSTITUTE OF ENERGY RESEARCH

Inventor： Jae Ho Yun ,  Jihye Gwak ,  SeJin Ahn ,  Kyung Hoon Yoon ,  Kee Shik Shin ,  SeoungKyu Ahn ,  Ara Cho ,  Sang Hyun Park ,  Hisun Park ,  Sung Woo Choi

IPC: H01L31/032 ,  H01L31/18

CPC classification number: H01L31/0322 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541

Abstract: A method of forming a CIGS absorber layer using a three-stage co-evaporation process, which can improve the efficiency of a solar cell in the case where Na concentration of a substrate is low and thus the depletion layer of the CIGS absorber layer is thick. The method includes a first stage of co-evaporating In, Ga and Se to deposit them; a second stage of co-evaporating Cu and Se to deposit them; and a third stage of co-evaporating In, Ga and Se to deposit them, wherein Ga supply through evaporation in the first stage is greater than Ga supply through evaporation in the third stage.

Abstract translation: 使用三级共蒸发法形成CIGS吸收层的方法，其可以在衬底的Na浓度低并且因此CIGS吸收层的耗尽层厚的情况下提高太阳能电池的效率 。 该方法包括使In，Ga和Se共蒸发沉积的第一阶段; 共蒸发Cu和Se以沉积它们的第二阶段; 以及共蒸发In，Ga和Se以沉积它们的第三阶段，其中在第一阶段中通过蒸发的Ga供应通过第三阶段中的蒸发大于Ga供应。

公开(公告)号：US10121924B2

公开(公告)日：2018-11-06

申请号：US14770455

申请日：2013-08-06

Applicant: KOREA INSTITUTE OF ENERGY RESEARCH

Inventor： Young Joo Eo ,  Ara Cho ,  Jun Sik Cho ,  Joo Hyung Park ,  Kyung Hoon Yoon ,  Se Jin Ahn ,  Ji Hye Gwak ,  Jae Ho Yun ,  Kee Shik Shin ,  Seoung Kyu Ahn ,  Jin Su You ,  Sang Hyun Park

IPC: H01L31/0749 ,  H01L31/0465 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/18

Abstract: The invention relates a thin-film solar cell. In the related art, a buffer layer, a transparent electrode, and a grid electrode are formed on a light absorption layer, but in the invention, the buffer layer and the transparent electrode are not formed on a light absorption layer, and the buffer layer, the transparent electrode, and the grid electrode are formed under a CIGS face such that solar light is directly input to the light absorption layer without obstacles, and the first electrode and the buffer layer are patterned in a saw-toothed structure to engage with each other to reduce a distance by which electrons or holes generated by absorbing light energy move to the electrode or the buffer layer.

公开(公告)号：US09667190B2

公开(公告)日：2017-05-30

申请号：US14402834

申请日：2014-08-08

Applicant: KOREA INSTITUTE OF ENERGY RESEARCH

Inventor： SeoungKyu Ahn ,  Kyung Hoon Yoon ,  Jae Ho Yun ,  Jun Sik Cho ,  SeJin Ahn ,  Jihye Gwak ,  Kee Shik Shin ,  Kihwan Kim ,  Joo Hyung Park ,  Young Joo Eo ,  Jin Su Yoo ,  Ara Cho

IPC: H02S50/15 ,  H02S50/00 ,  G01R31/28 ,  G05D23/19 ,  H02S50/10

CPC classification number: H02S50/15 ,  G01R31/2877 ,  G05D23/1917 ,  H02S50/00 ,  H02S50/10

Abstract: Disclosed herein is a device for controlling a sample temperature during photoelectric measurement of the sample. The device for controlling a sample temperature during photoelectric measurement of the sample includes: a sample stage to which a measurement target sample is fixed; a cooling unit for cooling the sample by injecting air; and a temperature measuring unit having a thermometer that measures a temperature of the sample. The device has an effect of easily controlling the temperature of a measurement target sample by employing a direct control method for a sample temperature, in which air or cooled air is injected to the sample.

公开(公告)号：US09634162B2

公开(公告)日：2017-04-25

申请号：US14412055

申请日：2013-09-03

Applicant: KOREA INSTITUTE OF ENERGY RESEARCH

Inventor： Ara Cho ,  Kyung Hoon Yoon ,  SeJin Ahn ,  Jae Ho Yun ,  Young Joo Eo ,  Jihye Gwak ,  Kee Shik Shin ,  SeoungKyu Ahn ,  Jun Sik Cho ,  Jin-Su Yoo ,  Joo Hyung Park

IPC: H01L31/0352 ,  C01B19/00 ,  H01L31/18 ,  H01L31/032

CPC classification number: H01L31/035209 ,  C01B19/00 ,  C01B19/007 ,  C01P2004/80 ,  C01P2006/40 ,  H01L31/0322 ,  H01L31/0352 ,  H01L31/1864 ,  Y02E10/541

Abstract: A method of fabricating an Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film using Se—Ag2Se core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell having the A(C)IGS thin film are disclosed. More particularly, a method of fabricating a densified Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film by non-vacuum coating a substrate with a slurry containing Se—Ag2Se core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell including the A(C)IGS based thin film are disclosed. According to the present invention, an A(C)IGS based thin film including Ag is manufactured by applying Se—Ag2Se core-shell nanoparticles in a process of manufacturing a (C)IGS thin film, thereby providing an A(C)IGS based thin film having a wide band gap.

公开(公告)号：US09437761B2

公开(公告)日：2016-09-06

申请号：US14780048

申请日：2014-04-01

Applicant: KOREA INSTITUTE OF ENERGY RESEARCH

Inventor： Young Joo Eo ,  Kyung Hoon Yoon ,  SeJin Ahn ,  Jihye Gwak ,  Jae Ho Yun ,  Ara Cho ,  Kee Shik Shin ,  SeoungKyu Ahn ,  Jun Sik Cho ,  Jin Su Yoo ,  Sang Hyun Park ,  Joo Hyung Park

IPC: H01L21/00 ,  H01L31/032 ,  H01L31/0445 ,  H01L31/18

CPC classification number: H01L31/0322 ,  H01L31/0445 ,  H01L31/18 ,  Y02E10/541

Abstract: Disclosed is a method of forming a chalcopyrite light-absorbing layer for a solar cell, including: forming a thin film including a chalcopyrite compound precursor; and radiating light on the thin film, wherein the chalcopyrite compound precursor absorbs light energy and is thus crystallized. When forming the chalcopyrite light-absorbing layer, light, but not heat, is applied, thus preventing problems, including damage to a substrate due to heat and formation of MoSe2 due to heating of the Mo rear electrode. Furthermore, long-wavelength light, which deeply penetrates the thin film, is first radiated, and short-wavelength light, which shallowly penetrates the thin film, is subsequently radiated, thereby sequentially forming the chalcopyrite light-absorbing layer from the bottom of the thin film.

Abstract translation: 公开了一种形成太阳能电池的黄铜矿光吸收层的方法，包括：形成包含黄铜矿化合物前体的薄膜; 并且在所述薄膜上照射光，其中所述黄铜矿化合物前体吸收光能并因此结晶。 当形成黄铜矿光吸收层时，施加光而不加热，从而防止由于Mo后电极的加热而由于热而导致基板损伤和形成MoSe2的问题。 此外，首先辐射深度穿透薄膜的长波长光，并且随后辐射浅穿透薄膜的短波长光，从而从薄的底部依次形成黄铜矿光吸收层 电影。

公开(公告)号：US20150162480A1

公开(公告)日：2015-06-11

申请号：US14418071

申请日：2013-08-09

Applicant: KOREA INSTITUTE OF ENERGY RESEARCH

Inventor： Ara Cho ,  Kyung Hoon Yoon ,  SeJin Ahn ,  Jae Ho Yun ,  Jihye Gwak ,  Joo Hyung Park ,  Jin Su Yoo ,  Jun Sik Cho ,  Seoungkyu Ahn ,  Young Joo Eo ,  Kihwan Kim

IPC: H01L31/18 ,  H01L31/0392 ,  H01L31/032

CPC classification number: H01L31/18 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/0322 ,  H01L31/03923 ,  Y02E10/541 ,  Y02P70/521

Abstract: Disclosed is a method of manufacturing a CI(G)S-based thin film, in which a slurry prepared by mixing two or more kinds of binary nanoparticles containing CI(G)S-based elements, a solution precursor containing a CI(G)S-based element, an alcoholic solvent and a chelating agent is used to reduce the carbon layer formed between the CI(G)S-based thin film and molybdenum, and which includes (a) mixing two or more kinds of binary nanoparticles containing CI(G)S-based elements, a solution precursor containing a CI(G)S-based element, an alcoholic solvent and a chelating agent, thus preparing a slurry; (b) subjecting the slurry to non-vacuum coating, thus forming a CI(G)S-based thin film; and (c) subjecting the CI(G)S-based thin film to selenization heat treatment.

Abstract translation: 公开了一种制备CI（G）S基薄膜的方法，其中通过混合两种或更多种含有CI（G）S基元素的二元纳米颗粒，含有CI（G） 使用S系元素，醇溶剂和螯合剂来还原CI（G）S系薄膜与钼之间形成的碳层，其包括（a）混合两种以上含有CI的二元纳米粒子 （G）S基元素，含有CI（G）S基元素，醇溶剂和螯合剂的溶液前体，从而制备浆料; （b）使浆料进行非真空涂布，从而形成CI（G）S基薄膜; 和（c）使CI（G）S基薄膜进行硒化热处理。

公开(公告)号：US20140338736A1

公开(公告)日：2014-11-20

申请号：US14364879

申请日：2013-06-19

Applicant: KOREA INSTITUTE OF ENERGY RESEARCH

Inventor： Jae Ho Yun ,  Jihye Gwak ,  SeJin Ahn ,  Kyung Hoon Yoon ,  Kee Shik Shin ,  SeoungKyu Ahn ,  Ara Cho ,  Sang Hyun Park ,  Jun Sik Cho ,  Jin Su You ,  Joo Hyung Park ,  Young Joo Eo

IPC: H01L31/0725 ,  H01L31/18

CPC classification number: H01L31/0725 ,  H01L21/02422 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L31/0326 ,  H01L31/18 ,  Y02E10/50

Abstract: A method for manufacturing a CZTS based thin film having a dual band gap slope, comprising the steps of: forming a Cu2ZnSnS4 thin film layer; forming a Cu2ZnSn(S,Se)4 thin film layer; and forming a Cu2ZnSnS4 thin film layer. A method for manufacturing a CZTS based solar cell having a dual band gap slope according to another aspect of the present invention comprises the steps of: forming a back contact; and forming a CZTS based thin film layer on the back contact by the method described above.

Abstract translation: 一种制造具有双带隙斜率的CZTS基薄膜的方法，包括以下步骤：形成Cu2ZnSnS4薄膜层; 形成Cu2ZnSn（S，Se）4薄膜层; 并形成Cu2ZnSnS4薄膜层。 根据本发明的另一方面的制造具有双带隙斜率的CZTS基太阳能电池的方法包括以下步骤：形成背接触; 并通过上述方法在背面接触上形成CZTS基薄膜层。

公开(公告)号：US09780246B2

公开(公告)日：2017-10-03

申请号：US14364879

申请日：2013-06-19

Applicant: KOREA INSTITUTE OF ENERGY RESEARCH

Inventor： Jae Ho Yun ,  Jihye Gwak ,  SeJin Ahn ,  Kyung Hoon Yoon ,  Kee Shik Shin ,  SeoungKyu Ahn ,  Ara Cho ,  Sang Hyun Park ,  Jun Sik Cho ,  Jin Su You ,  Joo Hyung Park ,  Young Joo Eo

IPC: H01L31/0725 ,  H01L31/032 ,  H01L21/02 ,  H01L31/18

CPC classification number: H01L31/0725 ,  H01L21/02422 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L31/0326 ,  H01L31/18 ,  Y02E10/50

Abstract: A method for manufacturing a CZTS based thin film having a dual band gap slope, comprising the steps of: forming a Cu2ZnSnS4 thin film layer; forming a Cu2ZnSn(S,Se)4 thin film layer; and forming a Cu2ZnSnS4 thin film layer. A method for manufacturing a CZTS based solar cell having a dual band gap slope according to another aspect of the present invention comprises the steps of: forming a back contact; and forming a CZTS based thin film layer on the back contact by the method described above.

公开(公告)号：US20200168753A1

公开(公告)日：2020-05-28

申请号：US16747532

申请日：2020-01-21

Applicant: KOREA INSTITUTE OF ENERGY RESEARCH

Inventor： Young-joo Eo ,  Jihye Gwak ,  Se-jin Ahn ,  Ara Cho ,  Jin-su Yoo ,  Jun-sik Cho ,  Seung-kyu Ahn ,  Joo-hyung Park ,  Kihwan Kim ,  Donghyeop Shin ,  Soo Min Song ,  Inyoung Jeong ,  Sang Min Lee

IPC: H01L31/048 ,  H01L31/18 ,  C08F210/02 ,  C08F216/06 ,  C08K3/36 ,  C09K3/10

Abstract: The present invention relates to an encapsulant capable of reducing potential-induced degradation (PID). The encapsulant is used to seal a solar cell to form a photovoltaic module, in which silica gel is dispersed in the encapsulant as a sodium ion adsorbent. Since the silica gel that is highly transparent is used as the sodium ion adsorbent, it is possible to prevent PID attributable to sodium ions and to prevent deterioration in photovoltaic efficiency of the photovoltaic module. Since the silica gel has a high specific surface area, it is possible to adsorb sodium ions with a small amount of the silica gel.

公开(公告)号：US10465868B2

公开(公告)日：2019-11-05

申请号：US15788049

申请日：2017-10-19

Applicant: KOREA INSTITUTE OF ENERGY RESEARCH

Inventor： Seung-kyu Ahn ,  Jun-sik Cho ,  Jae-ho Yun ,  Se-jin Ahn ,  Jihye Gwak ,  Jin-su Yoo ,  Joo-hyung Park ,  Young-joo Eo ,  Ara Cho ,  Kihwan Kim

IPC: H02S50/10 ,  F21S8/00 ,  G01R1/04 ,  G01R1/073

Abstract: A jig for a sample for a solar photovoltaic device is disclosed. The jig includes a cradle unit supporting the sample and a contact unit including at least one probe pin coming into contact with a busbar of the sample located in the cradle unit. The contact unit includes a coupling plate coupled with the cradle unit and at least one contact bar including a PCB and connected to the coupling plate, the contact bar having at least one probe pin aligned with the busbar of the sample with interposition of a probe pin connecting block. the jig includes a rotation support unit coupled with the cradle unit by a rotation shaft to allow the cradle unit to be rotated at an angle of 180° or greater so that upper and lower surfaces of the sample supported by the cradle unit are reversed.