公开(公告)号：US11670914B2

公开(公告)日：2023-06-06

申请号：US17321843

申请日：2021-05-17

Applicant: EXALOS AG

Inventor： Antonino Francesco Castiglia ,  Marco Rossetti ,  Marco Malinverni ,  Marcus Pierre Dülk ,  Christian Velez

IPC: H01S5/00 ,  H01S5/40 ,  H01S5/042 ,  H01S5/22 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/20 ,  H01S5/343

CPC classification number: H01S5/4031 ,  H01S5/042 ,  H01S5/0625 ,  H01S5/1021 ,  H01S5/1039 ,  H01S5/2018 ,  H01S5/22 ,  H01S5/343

Abstract: An edge-emitting semiconductor laser diode chip 15 with mutually opposed front and back end facet mirrors 22, 24. First and second ridges 261, 262 extend between the chip end facets 22, 24 to define first and second waveguides in an active region layer. Low and high slope efficiency laser diodes are thus formed that are independently drivable by respective electrode pairs 211, 231 and 212, 232. The single chip 15 thus incorporates two laser diodes sharing a common heterostructure, one with low slope efficiency optimized for low power operation with good power stability against temperature variations and random threshold current fluctuations in the close-to-threshold power regime, and the other with high slope efficiency optimized for high wall plug efficiency operation at higher output powers when the chip is operating far above threshold.

公开(公告)号：US11158758B2

公开(公告)日：2021-10-26

申请号：US16511374

申请日：2019-07-15

Applicant: EXALOS AG

Inventor： Antonino Francesco Castiglia ,  Marco Rossetti ,  Marco Malinverni ,  Marcus Dülk ,  Christian Velez

IPC: H01S5/22 ,  H01S5/0233 ,  H01L31/18 ,  H01S5/30 ,  H01S5/50 ,  H01S5/02 ,  H01L33/00 ,  H01L25/075 ,  H01S5/023 ,  H01S5/40

Abstract: Superluminescent light emitting diode, SLED, devices and modules are provided. A multi-wavelength SLED device is fabricated by sequentially depositing adjacent epitaxial stacks onto a substrate to form a monolithic chip structure. Each epitaxial stack includes n-type layers, active layers and p-type layers. A ridge is formed in the p-type layers between the end facets of the chip to induce a waveguiding region in the active layers. Different ones of the epitaxial stacks emit at different wavelength ranges. A module is made by packaging one of the above SLED devices with another SLED device, with one inverted relative to the other to form a triangle of emitters as viewed end on, for example a triangle of red, green and blue emitters. The SLED devices and modules may find use in projection, endoscopic, fundus imaging and optical coherence tomography systems.

公开(公告)号：US10600934B2

公开(公告)日：2020-03-24

申请号：US16249981

申请日：2019-01-17

Applicant: EXALOS AG

Inventor： Marco Malinverni ,  Marco Rossetti ,  Antonino Francesco Castiglia ,  Nicolas Pierre Grandjean

IPC: H01L33/14 ,  H01L33/00 ,  H01L33/32 ,  H01S5/042 ,  H01S5/30 ,  H01S5/183 ,  H01S5/223 ,  H01S5/323 ,  H01S5/20

Abstract: A group III-nitride semiconductor device comprises a light emitting semiconductor structure comprising a p-type layer and an n-type layer operable as a light emitting diode or laser. On top of the p-type layer there is arranged an n+ or n++-type layer of a group III-nitride, which is transparent to the light emitted from the underlying semiconductor structure and of sufficiently high electrical conductivity to provide lateral spreading of injection current for the light-emitting semiconductor structure.

公开(公告)号：US20200185884A1

公开(公告)日：2020-06-11

申请号：US16511374

申请日：2019-07-15

Applicant: EXALOS AG

Inventor： Antonino Francesco Castiglia ,  Marco Rossetti ,  Marco Malinverni ,  Marcus Dülk ,  Christian Velez

IPC: H01S5/30 ,  H01S5/50 ,  H01S5/02 ,  H01S5/022

Abstract: Superluminescent light emitting diode, SLED, devices and modules are provided. A multi-wavelength SLED device is fabricated by sequentially depositing adjacent epitaxial stacks onto a substrate to form a monolithic chip structure. Each epitaxial stack includes n-type layers, active layers and p-type layers. A ridge is formed in the p-type layers between the end facets of the chip to induce a waveguiding region in the active layers. Different ones of the epitaxial stacks emit at different wavelength ranges. A module is made by packaging one of the above SLED devices with another SLED device, with one inverted relative to the other to form a triangle of emitters as viewed end on, for example a triangle of red, green and blue emitters. The SLED devices and modules may find use in projection, endoscopic, fundus imaging and optical coherence tomography systems.