- Patent Title: Single sided channel mesa power junction field effect transistor
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Application No.: US16999942Application Date: 2020-08-21
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Publication No.: US11545585B2Publication Date: 2023-01-03
- Inventor: Vipindas Pala , Sudarsan Uppili
- Applicant: MONOLITHIC POWER SYSTEMS, INC.
- Applicant Address: US CA San Jose
- Assignee: MONOLITHIC POWER SYSTEMS, INC.
- Current Assignee: MONOLITHIC POWER SYSTEMS, INC.
- Current Assignee Address: US CA San Jose
- Agency: Beyer Law Group LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/808 ; H01L21/04 ; H01L29/10 ; H01L29/66 ; H01L29/16
Abstract:
Junction field effect transistors (JFETs) and related manufacturing methods are disclosed herein. A disclosed JFET includes a vertical channel region located in a mesa and a first channel control region located on a first side of the mesa. The first channel control region is at least one of a gate region and a first base region. The JEFT also includes a second base region located on a second side of the mesa and extending through the mesa to contact the vertical channel region. The vertical channel can be an implanted vertical channel. The vertical channel can be asymmetrically located in the mesa towards the first side of the mesa.
Public/Granted literature
- US20220059706A1 Single Sided Channel Mesa Power Junction Field Effect Transistor Public/Granted day:2022-02-24
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