Ferroelectric film phase shifter and wafer-level phased array chip system

    公开(公告)号:US12046789B1

    公开(公告)日:2024-07-23

    申请号:US18648408

    申请日:2024-04-28

    CPC classification number: H01P1/181 H01P1/184 H01P11/00

    Abstract: A ferroelectric film phase shifter includes a substrate layer; an isolated signal layer located on the substrate layer; first, second and third top transmission line electrodes distributed on the isolated signal layer at intervals; the first and second top transmission line electrodes located at both ends of the isolated signal layer, and the third top transmission line electrode located on a middle region of the isolated signal layer; a bottom transmission line electrode located in the isolated signal layer; an intermediate transmission line structure located in a middle region of the bottom transmission line electrode and adjacent to the third top transmission line electrode; MIM hafnium oxide-based ferroelectric capacitor structures located at two ends of the bottom transmission line electrode; and metal transmission line structures located between each MIM hafnium oxide-based ferroelectric capacitor structure and each of the first top transmission line electrode and the second top transmission line electrode.

    PHASE SHIFTER AND METHOD FOR PREPARING THE SAME

    公开(公告)号:US20240243457A1

    公开(公告)日:2024-07-18

    申请号:US18016743

    申请日:2022-01-04

    CPC classification number: H01P1/30 H01P1/184 H01P11/00

    Abstract: The phase shifter includes a substrate; a first wire and second wires arranged on a side of the substrate, wherein two opposite sides of the first wire are respectively provided with the second wires, and the first wire and the second wires are arranged in parallel and insulated from each other; a hydrophobic conductive part, which is arranged crosswise with the first wire and is insulated from the first wire, and at least one end of the hydrophobic conductive part is overlapped with the second wire at one side of the first wire, and is insulated from the second wire; and a hydrophilic part, wherein a minimum distance between an orthographic projection of the hydrophilic part on the substrate and an orthographic projection of the hydrophobic conductive part that does not overlap with the second wires, in a first direction, is less than or equal to a preset value.

    NEGATIVE DIFFERENTIAL PHASE SHIFTER
    4.
    发明公开

    公开(公告)号:US20240030573A1

    公开(公告)日:2024-01-25

    申请号:US18215024

    申请日:2023-06-27

    Applicant: John Howard

    Inventor: John Howard

    CPC classification number: H01P1/184 H01P11/007

    Abstract: A negative differential phase shifter includes a first uncoupled transmission line, wherein the first uncoupled transmission line has a length of λ/2 at a center frequency; a first coupled transmission line, wherein the first coupled transmission line is operatively connected to the first uncoupled transmission line; and a second uncoupled transmission line, wherein the second uncoupled transmission line is operatively connected to the first coupled transmission line, and the second uncoupled transmission line is operatively connected to the first uncoupled transmission line. A method of implementing a negative differential phase shifter includes operatively connecting a first coupled transmission line to a first uncoupled transmission line, wherein the first uncoupled transmission line has a length of λ/2 at a center frequency; operatively connecting a second uncoupled transmission line to the first coupled transmission line; and operatively connecting the second uncoupled transmission line to the first uncoupled transmission line.

    ELECTRONIC DEVICE AND METHOD FOR FORMING THE SAME

    公开(公告)号:US20230387562A1

    公开(公告)日:2023-11-30

    申请号:US18358221

    申请日:2023-07-25

    Inventor: Tsung-Han TSAI

    Abstract: An electronic device is provided, including: a first substrate, a plurality of phase shifters, a second substrate, a plurality of patches, a common electrode layer, and a dielectric layer. The plurality of phase shifters are disposed on the first substrate. The second substrate is disposed opposite to the first substrate. The plurality of patches are disposed on the second substrate. The dielectric layer is disposed between the common electrode layer and the second substrate and on the plurality of patches. In addition, a thickness of the dielectric layer is greater than or equal to 5 μm and less than or equal to a thickness of the second substrate.

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