公开(公告)号：US11070185B2

公开(公告)日：2021-07-20

申请号：US16779982

申请日：2020-02-03

Applicant: WIN Semiconductors Corp.

Inventor： Chia-Ta Chang ,  Chun-Ju Wei ,  Kuo-Lung Weng

IPC: H03H3/02 ,  H03H9/58 ,  H03H3/04

Abstract: A method for forming cavity of bulk acoustic wave resonator comprising following steps of: forming a sacrificial epitaxial structure mesa on a compound semiconductor substrate; forming an insulating layer on the sacrificial epitaxial structure mesa and the compound semiconductor substrate; polishing the insulating layer by a chemical-mechanical planarization process to form a polished surface; forming a bulk acoustic wave resonance structure on the polished surface, which comprises following steps of: forming a bottom electrode layer on the polished surface; forming a piezoelectric layer on the bottom electrode layer; and forming a top electrode layer on the piezoelectric layer, wherein the bulk acoustic wave resonance structure is located above the sacrificial epitaxial structure mesa; and etching the sacrificial epitaxial structure mesa to form a cavity, wherein the cavity is located under the bulk acoustic wave resonance structure.

公开(公告)号：US10608608B2

公开(公告)日：2020-03-31

申请号：US15684347

申请日：2017-08-23

Applicant: WIN Semiconductors Corp.

Inventor： Chia-Ta Chang ,  Chun-Ju Wei ,  Kuo-Lung Weng

IPC: H03H3/02 ,  H03H9/02 ,  H03H9/17 ,  H03H9/13 ,  H03H9/58 ,  H03H3/04 ,  H03H9/56 ,  H03H9/60

Abstract: A method for fabricating bulk acoustic wave resonator with mass adjustment structure, comprising following steps of: forming a sacrificial structure mesa on a substrate; etching the sacrificial structure mesa such that any two adjacent parts have different heights, a top surface of a highest part of the sacrificial structure mesa is coincident with a mesa top extending plane; forming an insulating layer on the sacrificial structure mesa and the substrate; polishing the insulating layer to form a polished surface; forming a bulk acoustic wave resonance structure including a top electrode, a piezoelectric layer and a bottom electrode on the polished surface; etching the sacrificial structure mesa to form a cavity; the insulating layer between the polished surface and the mesa top extending plane forms a frequency tuning structure, the insulating layer between the mesa top extending plane and the cavity forms a mass adjustment structure.

公开(公告)号：US11990889B2

公开(公告)日：2024-05-21

申请号：US17134681

申请日：2020-12-28

Applicant: WIN SEMICONDUCTORS CORP.

Inventor： Kuo-Lung Weng ,  Chia-Ta Chang ,  Tzu-Sheng Hsieh ,  Chun-Ju Wei

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/02 ,  H03H9/13

CPC classification number: H03H9/172 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/131

Abstract: A bulk acoustic wave resonator and a formation method thereof are provided. The method for forming the bulk acoustic wave resonator includes forming a sacrificial structure on a substrate. A seed layer is formed on the sacrificial structure. A bottom electrode is formed on the seed layer. A piezoelectric layer is formed on the bottom electrode. A top electrode is formed on the piezoelectric layer. The sacrificial structure is removed to form a cavity. The seed layer is etched through the cavity.

公开(公告)号：US10594286B2

公开(公告)日：2020-03-17

申请号：US15477758

申请日：2017-04-03

Applicant: WIN Semiconductors Corp.

Inventor： Chia-Ta Chang ,  Chun-Ju Wei ,  Kuo-Lung Weng

IPC: H03H9/02 ,  H03H3/007 ,  H03H9/54 ,  H03H9/205 ,  H03H3/02 ,  H03H9/58 ,  H03H3/04

Abstract: A method for forming cavity of bulk acoustic wave resonator comprising following steps of: forming a sacrificial epitaxial structure mesa on a compound semiconductor substrate; forming an insulating layer on the sacrificial epitaxial structure mesa and the compound semiconductor substrate; polishing the insulating layer by a chemical-mechanical planarization process to form a polished surface; forming a bulk acoustic wave resonance structure on the polished surface, which comprises following steps of: forming a bottom electrode layer on the polished surface; forming a piezoelectric layer on the bottom electrode layer; and forming a top electrode layer on the piezoelectric layer, wherein the bulk acoustic wave resonance structure is located above the sacrificial epitaxial structure mesa; and etching the sacrificial epitaxial structure mesa to form a cavity, wherein the cavity is located under the bulk acoustic wave resonance structure.

公开(公告)号：US10250228B2

公开(公告)日：2019-04-02

申请号：US15430315

申请日：2017-02-10

Applicant: WIN Semiconductors Corp.

Inventor： Chia-Ta Chang ,  Chih-Feng Chiang ,  Tzu-Sheng Hsieh

IPC: H03H9/58 ,  H03H9/17 ,  H03H9/54

Abstract: A bulk acoustic wave resonator with a mass adjustment structure comprises a supporting layer, a lower metal layer, a piezoelectric layer, an upper metal layer and a mass adjustment structure. The supporting layer is formed on a substrate. The supporting layer has a cavity, and the cavity has a top-inner surface. The lower metal layer is formed on the supporting layer. The piezoelectric layer is formed on the lower metal layer. The upper metal layer is formed on the piezoelectric layer. An acoustic wave resonance region is defined by an overlapping region of projections of the upper metal layer, the piezoelectric layer, the lower metal layer, the supporting layer and the cavity. The acoustic wave resonance region is divided into a peripheral region and a central region. The mass adjustment structure comprises a peripheral mass adjustment structure formed on the top-inner surface within the peripheral region.

公开(公告)号：US10097156B2

公开(公告)日：2018-10-09

申请号：US15228298

申请日：2016-08-04

Applicant: WIN Semiconductors Corp.

Inventor： Chia-Ta Chang ,  Re Ching Lin ,  Yung-Chung Chin ,  Chih-Feng Chiang

IPC: H03H9/13 ,  H03H9/17 ,  H03H9/02

Abstract: A resonance structure of bulk acoustic wave resonator comprises a bottom electrode, a dielectric layer and a top electrode, wherein the dielectric layer is formed on the bottom electrode; the top electrode is formed on the dielectric layer. A resonance area is defined by the overlapping area of the projection of the bottom electrode, the dielectric layer and the top electrode. The resonance area has a contour. The contour includes at least three curved edges and is formed by connecting the at least three curved edges. Each curved edge is concave to a geometric center of the contour.

公开(公告)号：US12149049B2

公开(公告)日：2024-11-19

申请号：US17527308

申请日：2021-11-16

Applicant: WIN SEMICONDUCTORS CORP.

Inventor： Yu-Chun Chen ,  Yu-Hsuan Huang ,  Chia-Ta Chang

IPC: H01S5/183

Abstract: A vertical-cavity surface-emitting laser includes a substrate. A first mirror is disposed on the substrate. An active layer is disposed on the first mirror. An oxide layer is disposed on the active layer. An aperture is disposed on the active layer. The aperture is surrounded by the oxide layer. A second mirror is disposed on the aperture and the oxide layer. A high-contrast grating is disposed on the second mirror. The high-contrast grating includes a first grating element and a second grating element, and the first grating element and the second grating element are spaced apart from each other with an air gap therebetween. A passivation layer is disposed on the high-contrast grating. A first thickness of the passivation layer on a top surface of the first grating element is greater than a second thickness of the passivation layer on a first sidewall of the first grating element.

公开(公告)号：US11637538B2

公开(公告)日：2023-04-25

申请号：US17331330

申请日：2021-05-26

Applicant: WIN Semiconductors Corp.

Inventor： Chia-Ta Chang ,  Chun-Ju Wei ,  Kuo-Lung Weng

IPC: H03H3/02 ,  H03H9/58 ,  H03H3/04 ,  H03H9/02

Abstract: A bulk acoustic wave filter comprises a substrate, an insulating layer disposed on the substrate and having a first cavity and a second cavity formed therein, a first bulk-acoustic-wave-resonance-structure disposed on the first cavity and a second bulk-acoustic-wave-resonance-structure disposed on the second cavity. The first bulk-acoustic-wave-resonance-structure comprises a first bottom electrode disposed on the first cavity, a first top electrode disposed on the first bottom electrode, a first piezoelectric layer portion sandwiched between the first top electrode and the first bottom electrode, and a first frequency tuning structure disposed between the first cavity and the first bottom electrode. The second bulk-acoustic-wave-resonance-structure comprises a second bottom electrode disposed on the second cavity, a second top electrode disposed on the second bottom electrode, a second piezoelectric layer portion sandwiched between the second top electrode and the second bottom electrode.

公开(公告)号：US11502661B2

公开(公告)日：2022-11-15

申请号：US16780007

申请日：2020-02-03

Applicant: WIN Semiconductors Corp.

Inventor： Chia-Ta Chang ,  Chun-Ju Wei ,  Kuo-Lung Weng

IPC: H03H3/02 ,  H03H9/02 ,  H03H9/17 ,  H03H9/13 ,  H03H9/58 ,  H03H3/04 ,  H03H9/56 ,  H03H9/60

Abstract: A method for fabricating bulk acoustic wave resonator with mass adjustment structure, comprising following steps of: forming a sacrificial structure mesa on a substrate; etching the sacrificial structure mesa such that any two adjacent parts have different heights, a top surface of a highest part of the sacrificial structure mesa is coincident with a mesa top extending plane; forming an insulating layer on the sacrificial structure mesa and the substrate; polishing the insulating layer to form a polished surface; forming a bulk acoustic wave resonance structure including a top electrode, a piezoelectric layer and a bottom electrode on the polished surface; etching the sacrificial structure mesa to form a cavity; the insulating layer between the polished surface and the mesa top extending plane forms a frequency tuning structure, the insulating layer between the mesa top extending plane and the cavity forms a mass adjustment structure.

公开(公告)号：US10256329B2

公开(公告)日：2019-04-09

申请号：US14846110

申请日：2015-09-04

Applicant: WIN SEMICONDUCTORS CORP.

Inventor： Shinichiro Takatani ,  Jui-Pin Chiu ,  Chia-Ta Chang

IPC: H01L29/00 ,  H01L29/737 ,  H01L29/205 ,  H01L29/10 ,  H01L29/08 ,  H01L29/207

Abstract: A HBT on a GaAs substrate is presented, wherein its base comprises a first base layer comprising IniGa1-iAs with an Indium content i with a slope s1 and a second base layer on the emitter side comprising InjGa1-jAs with an Indium content j with a slope s2, and an average of s1 is half of the average of s2 or smaller; or the base comprises a first base layer comprising InmGa1-mAs with an Indium content m and a second base layer on the emitter side comprising InnGa1-nAs with an Indium content n, and an average of n is larger than the m at a second base layer side; or the base comprises a first base layer pseudomorphic to GaAs with a bulk lattice constant larger than GaAs, and the emitter comprises a first emitter layer pseudomorphic to GaAs with a bulk lattice constant smaller than GaAs.