公开(公告)号：US20170352560A1

公开(公告)日：2017-12-07

申请号：US15609371

申请日：2017-05-31

Applicant: Tokyo Electron Limited

Inventor： Takahiko Kato ,  Weiting Chen

IPC: H01L21/67 ,  C23C16/455 ,  H01L21/02 ,  H01J37/32 ,  H01L21/683 ,  H01L21/311

CPC classification number: H01L21/67069 ,  C23C16/45525 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32642 ,  H01J37/32724 ,  H01J37/32834 ,  H01J2237/334 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/67017 ,  H01L21/6833

Abstract: A substrate processing method includes a first process of supplying a first gas to a substrate; and a second process of supplying a second gas to the substrate after the first process. When a distance from an edge of the substrate to a boundary between a processing space and a gas exhaust space is L, a cross sectional area of a space orthogonal to a flow of the second gas is S(x), a supply flow rate of the second gas is Q, a pressure within the processing space is P and a diffusion coefficient of the first gas to the second gas is D, at least one of the distance L, the cross sectional area S(x) and the supply flow rate Q in the second process is adjusted such that a Peclet number Pe calculated by expression (3) becomes larger than 1. [ Expression   3 ]  Pe = Q D · P  ∫ 0 L  1 S ( x )  dx ( 3 )

公开(公告)号：US10373846B2

公开(公告)日：2019-08-06

申请号：US15609371

申请日：2017-05-31

Applicant: Tokyo Electron Limited

Inventor： Takahiko Kato ,  Weiting Chen

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/455 ,  H01L21/02 ,  H01L21/311 ,  H01L21/683

Abstract: A substrate processing method includes a first process of supplying a first gas to a substrate; and a second process of supplying a second gas to the substrate after the first process. When a distance from an edge of the substrate to a boundary between a processing space and a gas exhaust space is L, a cross sectional area of a space orthogonal to a flow of the second gas is S(x), a supply flow rate of the second gas is Q, a pressure within the processing space is P and a diffusion coefficient of the first gas to the second gas is D, at least one of the distance L, the cross sectional area S(x) and the supply flow rate Q in the second process is adjusted such that a Peclet number Pe calculated by expression (3) becomes larger than 1. [ Expression ⁢ ⁢ 3 ] ⁢ Pe = Q D · P ⁢ ∫ 0 L ⁢ 1 S ( x ) ⁢ dx ( 3 )