公开(公告)号：US10804895B2

公开(公告)日：2020-10-13

申请号：US16392771

申请日：2019-04-24

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Chan-Hong Chern ,  Chu Fu Chen ,  Chun Lin Tsai ,  Mark Chen ,  King-Yuen Wong ,  Ming-Cheng Lin ,  Tysh-Bin Lin

IPC: H03K3/00 ,  H03K17/06 ,  H03K17/687 ,  H02M3/07 ,  H01L23/31

Abstract: Devices are described herein for a low static current semiconductor device. A semiconductor device includes a power transistor and a driving circuit coupled to and configured to drive the power transistor. The driving circuit includes a first stage having an enhancement-mode high-electron-mobility transistor (HEMT) and a second stage that is coupled between the first stage and the power transistor and that includes a pair of enhancement-mode HEMTs.

公开(公告)号：US20180316346A1

公开(公告)日：2018-11-01

申请号：US16021230

申请日：2018-06-28

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Chan-Hong Chern ,  Chu Fu Chen ,  Chun Lin Tsai ,  Mark Chen ,  King-Yuen Wong ,  Ming-Cheng Lin ,  Tysh-Bin Lin

IPC: H03K17/687 ,  H01L23/31 ,  H02M3/07 ,  H03K17/06

CPC classification number: H03K17/6877 ,  H01L23/3107 ,  H02M3/07 ,  H03K17/063 ,  H03K2217/0036 ,  H03K2217/0081

Abstract: Devices, systems, and methods are described herein for a low static current semiconductor device. A semiconductor device includes a power transistor and a driving circuit coupled to and configured to drive the power transistor. The driving circuit includes a first stage having an enhancement-mode high-electron-mobility transistor (HEMT) and a a second stage that is coupled between the first stage and the power transistor and that includes a pair of enhancement-mode HEMTs.

公开(公告)号：US20200228116A1

公开(公告)日：2020-07-16

申请号：US16830458

申请日：2020-03-26

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Chan-Hong Chern ,  Chu Fu Chen ,  Chun Lin Tsai ,  Mark Chen ,  King-Yuen Wong ,  Ming-Cheng Lin ,  Tysh-Bin Lin

IPC: H03K17/687 ,  H02M3/07 ,  H01L23/31 ,  H03K17/06

Abstract: Devices are described herein for a low static current semiconductor device. A semiconductor device includes a power transistor and a driving circuit coupled to and configured to drive the power transistor. The driving circuit includes a first stage having an enhancement-mode high-electron-mobility transistor (HEMT) and a second stage that is coupled between the first stage and the power transistor and that includes a pair of enhancement-mode HEMTs.

公开(公告)号：US20190253051A1

公开(公告)日：2019-08-15

申请号：US16392771

申请日：2019-04-24

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Chan-Hong Chern ,  Chu Fu Chen ,  Chun Lin Tsai ,  Mark Chen ,  King-Yuen Wong ,  Ming-Cheng Lin ,  Tysh-Bin Lin

IPC: H03K17/687 ,  H02M3/07 ,  H03K17/06 ,  H01L23/31

CPC classification number: H03K17/6877 ,  H01L23/3107 ,  H02M3/07 ,  H03K17/063 ,  H03K2217/0036 ,  H03K2217/0081

Abstract: Devices are described herein for a low static current semiconductor device. A semiconductor device includes a power transistor and a driving circuit coupled to and configured to drive the power transistor. The driving circuit includes a first stage having an enhancement-mode high-electron-mobility transistor (HEMT) and a second stage that is coupled between the first stage and the power transistor and that includes a pair of enhancement-mode HEMTs.

公开(公告)号：US10284195B2

公开(公告)日：2019-05-07

申请号：US16021230

申请日：2018-06-28

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Chan-Hong Chern ,  Chu Fu Chen ,  Chun Lin Tsai ,  Mark Chen ,  King-Yuen Wong ,  Ming-Cheng Lin ,  Tysh-Bin Lin

IPC: H03K3/00 ,  H03K17/687 ,  H02M3/07 ,  H01L23/31 ,  H03K17/06

Abstract: Devices, systems, and methods are described herein for a low static current semiconductor device. A semiconductor device includes a power transistor and a driving circuit coupled to and configured to drive the power transistor. The driving circuit includes a first stage having an enhancement-mode high-electron-mobility transistor (HEMT) and a a second stage that is coupled between the first stage and the power transistor and that includes a pair of enhancement-mode HEMTs.