Method for manufacturing an electronic device including a light absorption layer
    1.
    发明授权
    Method for manufacturing an electronic device including a light absorption layer 有权
    包括光吸收层的电子器件的制造方法

    公开(公告)号:US08687469B1

    公开(公告)日:2014-04-01

    申请号:US13708593

    申请日:2012-12-07

    CPC classification number: G11B5/105 G11B2005/0021

    Abstract: A method of manufacturing an electronic device includes a first bonding step of bonding an electronic component and a first member together via a first bonding layer and a second bonding step of bonding the first member and a second member together via a second bonding layer after the first bonding step. The second bonding layer includes a bonding material layer made of a bonding material. In the second bonding step, with the bonding material interposed between the first and second members before being bonded together, the bonding material is heated and melted using light traveling through the first member. The first member is made of Si. The light has a wavelength in the range of 1100 to 15000 nm.

    Abstract translation: 一种制造电子器件的方法包括:第一接合步骤,通过第一接合层将电子部件和第一部件接合在一起;以及第二接合步骤,通过第二接合层在第一接合层之后将第一部件和第二部件接合在一起 结合步骤。 第二接合层包括由接合材料制成的接合材料层。 在第二接合步骤中,在接合材料在被接合在一起之前介于第一和第二构件之间的接合材料中,使用通过第一构件的光进行接合材料的加热和熔化。 第一个成员是由Si制成。 光的波长在1100〜15000nm的范围内。

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