公开(公告)号：US09799783B2

公开(公告)日：2017-10-24

申请号：US14675194

申请日：2015-03-31

Applicant: SunPower Corporation

Inventor： Paul Loscutoff ,  Kahn Wu ,  Steven Edward Molesa

IPC: B05D5/12 ,  H01L31/0288 ,  H01L31/068 ,  H01L31/18 ,  H02S40/44

CPC classification number: H01L31/0288 ,  H01L31/0682 ,  H01L31/1804 ,  H02S40/44 ,  Y02E10/547 ,  Y02E10/60 ,  Y02P70/521

Abstract: Dopant ink compositions and methods of fabricating solar cells there from are described. A dopant ink composition may include a cross-linkable matrix precursor, a bound dopant species, and a solvent. A method of fabricating a solar cell may include delivering a dopant ink composition to a region above a substrate. The dopant ink composition includes a cross-linkable matrix precursor, a bound dopant species, and a solvent. The method also includes baking the dopant ink composition to remove a substantial portion of the solvent of the dopant ink composition, curing the baked dopant ink composition to cross-link a substantial portion of the cross-linkable matrix precursor of the dopant ink composition, and driving dopants from the cured dopant ink composition toward the substrate.

公开(公告)号：US09437757B2

公开(公告)日：2016-09-06

申请号：US14744962

申请日：2015-06-19

Applicant: SunPower Corporation

Inventor： Genevieve A. Solomon ,  Scott Harrington ,  Kahn Wu ,  Paul Loscutoff ,  Junbo Wu ,  Steven Edward Molesa

IPC: H01L21/00 ,  H01L21/20 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0236

CPC classification number: H01L31/022441 ,  H01L31/02363 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of fabricating a solar cell is disclosed. The method includes forming a polished surface on a silicon substrate and forming a first flowable matrix in an interdigitated pattern on the polished surface, where the polished surface allows the first flowable matrix to form an interdigitated pattern comprising features of uniform thickness and width. In an embodiment, the method includes forming the silicon substrate using a method such as, but not limited to, of diamond wire or slurry wafering processes. In another embodiment, the method includes forming the polished surface on the silicon substrate using a chemical etchant such as, but not limited to, sulfuric acid (H2SO4), acetic acid (CH3COOH), nitric acid (HNO3), hydrofluoric acid (HF) or phosphoric acid (H3PO4). In still another embodiment, the etchant is an isotropic etchant. In yet another embodiment, the method includes providing a surface of the silicon substrate with at most 500 nanometer peak-to-valley roughness.

公开(公告)号：US09082925B2

公开(公告)日：2015-07-14

申请号：US13801192

申请日：2013-03-13

Applicant: SunPower Corporation

Inventor： Genevieve A. Solomon ,  Scott Harrington ,  Kahn Wu ,  Paul Loscutoff ,  Junbo Wu ,  Steven Edward Molesa

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0264

CPC classification number: H01L31/022441 ,  H01L31/02363 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of fabricating a solar cell is disclosed. The method includes forming a polished surface on a silicon substrate and forming a first flowable matrix in an interdigitated pattern on the polished surface, where the polished surface allows the first flowable matrix to form an interdigitated pattern comprising features of uniform thickness and width. In an embodiment, the method includes forming the silicon substrate using a method such as, but not limited to, of diamond wire or slurry wafering processes. In another embodiment, the method includes forming the polished surface on the silicon substrate using a chemical etchant such as, but not limited to, sulfuric acid (H2SO4), acetic acid (CH3COOH), nitric acid (HNO3), hydrofluoric acid (HF) or phosphoric acid (H3PO4). In still another embodiment, the etchant is an isotropic etchant. In yet another embodiment, the method includes providing a surface of the silicon substrate with at most 500 nanometer peak-to-valley roughness.

Abstract translation: 公开了一种制造太阳能电池的方法。 该方法包括在硅衬底上形成抛光表面，并在研磨表面上形成交错图案中的第一可流动基质，其中抛光表面允许第一可流动基质形成包括均匀厚度和宽度特征的叉指图案。 在一个实施例中，该方法包括使用诸如但不限于金刚石线或浆料晶片化方法的方法来形成硅衬底。 在另一个实施方案中，该方法包括使用化学蚀刻剂（例如但不限于硫酸（H 2 SO 4）），乙酸（CH 3 COOH），硝酸（HNO 3），氢氟酸（HF））在硅衬底上形成抛光表面， 或磷酸（H 3 PO 4）。 在另一个实施方案中，蚀刻剂是各向同性蚀刻剂。 在另一个实施例中，该方法包括提供硅衬底的表面至多500纳米的峰 - 谷粗糙度。