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公开(公告)号:US12218167B2
公开(公告)日:2025-02-04
申请号:US17281452
申请日:2019-08-16
Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Inventor: Kentaro Akiyama , Junichiro Fujimagari
IPC: H01L27/146
Abstract: To provide a solid-state imaging device capable of further improving quality. Provided is a solid-state imaging device including: a first semiconductor element having a first semiconductor layer provided with a first through via and a photoelectric conversion unit configured to photoelectrically convert light that has been incident, a connection part that is wider than the first through via and is provided outside a region where the photoelectric conversion unit is provided on a surface of the first semiconductor layer on a side for receiving the light, connection wiring provided on the surface and configured to connect the first through via and the connection part, and a first passivation layer formed on the surface side; a second semiconductor element mounted on the first semiconductor element by the connection part; and a first guard ring formed on an outer peripheral portion of the first semiconductor element to surround the first semiconductor element. In the solid-state imaging device, at least a part of the first guard ring is arranged outside the first semiconductor layer and above a second semiconductor layer formed in substantially the same layer as the first semiconductor layer, and the first guard ring is arranged outside the first passivation layer and below a second passivation layer formed in substantially the same layer as the first passivation layer.
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公开(公告)号:US11004884B2
公开(公告)日:2021-05-11
申请号:US16499911
申请日:2018-03-09
Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Inventor: Takashi Machida , Kentaro Akiyama , Tomohiro Yamazaki
IPC: H01L27/146 , G02B5/30
Abstract: An imaging device includes one or more insulating layers on a substrate; an effective region including: a polarization layer in the one or more insulating layers and including one or more polarizers that polarize light; and at least one first photoelectric conversion region in the substrate and that converts incident light polarized by the one or more polarizers into electric charge; and a peripheral region outside the effective region and including: one or more wiring layers that include a pad portion in a same layer of the one or more insulating layers as the polarization layer.
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公开(公告)号:US11217617B2
公开(公告)日:2022-01-04
申请号:US16615884
申请日:2018-04-18
Applicant: Sony Semiconductor Solutions Corporation
Inventor: Kentaro Akiyama , Takuma Matsuno , Takashi Terada , Tomohiro Yamazaki
IPC: H01L27/146 , G02B5/30
Abstract: An imaging element of the present disclosure includes: a photoelectric conversion section 21 provided in a substrate 30; a polarizer 50 formed over the photoelectric conversion section 21, with a single ground insulating layer 31 interposed therebetween; and a light shielding section 41A formed on an upper side of a peripheral region 21′ around the photoelectric conversion section 21.
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公开(公告)号:US11044387B2
公开(公告)日:2021-06-22
申请号:US16489083
申请日:2018-03-07
Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Inventor: Kentaro Akiyama , Tomohiro Yamazaki , Shintarou Hirata
IPC: H04N5/225 , G02B5/30 , H01L27/146 , H04N5/355 , H04N9/04
Abstract: A stacked imaging device includes a polarizer and a plurality of photoelectric conversion units that is stacked, and the polarizer and the plurality of photoelectric conversion units are stacked, with the polarizer being disposed closer to the light incident side than the plurality of photoelectric conversion units.
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公开(公告)号:US20200152683A1
公开(公告)日:2020-05-14
申请号:US16615884
申请日:2018-04-18
Applicant: Sony Semiconductor Solutions Corporation
Inventor: Kentaro Akiyama , Takuma Matsuno , Takashi Terada , Tomohiro Yamazaki
IPC: H01L27/146
Abstract: An imaging element of the present disclosure includes: a photoelectric conversion section 21 provided in a substrate 30; a polarizer 50 formed over the photoelectric conversion section 21, with a single ground insulating layer 31 interposed therebetween; and a light shielding section 41A formed on an upper side of a peripheral region 21′ around the photoelectric conversion section 21.
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公开(公告)号:US09997552B2
公开(公告)日:2018-06-12
申请号:US15508561
申请日:2015-08-28
Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Inventor: Susumu Inoue , Kentaro Akiyama , Junichiro Fujimagari , Keita Ishikawa , Jun Ogi , Yukio Tagawa , Takuya Nakamura , Satoru Wakiyama
IPC: H01L31/0232 , H01L27/146 , H04N5/369
CPC classification number: H01L27/14618 , H01L27/14 , H01L27/14627 , H01L27/14634 , H01L27/14636 , H01L2224/16225 , H01L2224/27013 , H01L2224/32225 , H01L2224/73204 , H04N5/369 , H01L2924/00
Abstract: The present technology relates to a solid-state imaging device, an imaging apparatus, an electronic apparatus, and a semiconductor device, which can prevent overflow of an underfilling resin filled in a portion adapted to connect the substrate to the flip chip and can prevent secondary damages such as electric short-circuit and contact with processing equipment. By utilizing a molding technology of forming an on-chip lens, a dam is formed in a ring shape or a square shape in a manner surrounding a range where a flip chip is connected via a solder bump on an upper layer of a substrate of the solid-state imaging device and provided in order to form the on-chip lens. This can block the underfilling resin filled in the range where the substrate and the flip chip are electrically connected. The present technology can be applied to a solid-state imaging device.
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