Abstract:
A four junction solar cell having an upper first solar subcell composed of a semiconductor material having a first band gap; a second solar subcell adjacent to said first solar subcell and composed of a semiconductor material having a second band gap smaller than the first band gap and being lattice matched with the upper first solar subcell; a third solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a third band gap smaller than the second band gap and being lattice matched with the second solar subcell; and a fourth solar subcell adjacent to and lattice mismatched from said third solar subcell and composed of a semiconductor material having a fourth band gap smaller than the third band gap; wherein the fourth subcell has a direct bandgap of greater than 0.75 eV, and the average band gap of the solar cell is equal to or greater than 1.35 eV.
Abstract:
The present disclosure provides a multijunction solar cell that includes: a first sequence of layers of semiconductor material forming a first set of one or more solar subcells; a graded interlayer adjacent to said first sequence of layers; a second sequence of layers of semiconductor material forming a second set of one or more solar subcells; and a high band gap contact layer adjacent said second sequence of layers, wherein the high band gap contact layer is composed of p++ type InGaAlAs or InGaAs.
Abstract:
A solar cell comprising a bulk germanium silicon growth substrate; a diffused photoactive junction in the germanium silicon substrate; and a sequence of subcells grown over the substrate, with the first grown subcell either being lattice matched or lattice mis-matched to the growth substrate.
Abstract:
The present disclosure provides a multijunction solar cell that includes: a first sequence of layers of semiconductor material forming a first set of one or more solar subcells; a graded interlayer adjacent to said first sequence of layers; a second sequence of layers of semiconductor material forming a second set of one or more solar subcells; and a high band gap contact layer adjacent said second sequence of layers, wherein the high band gap contact layer is composed of p++ type InGaAlAs or InGaAs.
Abstract:
A solar cell comprising a bulk germanium silicon growth substrate; a diffused photoactive junction in the germanium silicon substrate; and a sequence of subcells grown over the substrate, with the first grown subcell either being lattice matched or lattice mis-matched to the growth substrate.
Abstract:
A solar cell comprising a bulk germanium silicon growth substrate; a diffused photoactive junction in the germanium silicon substrate; and a sequence of subcells grown over the substrate, with the first grown subcell either being lattice matched or lattice mis-matched to the growth substrate.
Abstract:
A solar cell comprising a bulk germanium silicon growth substrate; a diffused photoactive junction in the germanium silicon substrate; and a sequence of subcells grown over the substrate, with the first grown subcell either being lattice matched or lattice mis-matched to the growth substrate.