Active matrix substrate
    1.
    发明授权

    公开(公告)号:US12002820B2

    公开(公告)日:2024-06-04

    申请号:US17591042

    申请日:2022-02-02

    CPC classification number: H01L27/1251 H01L27/124 H01L29/78633 H01L27/1225

    Abstract: An active matrix substrate includes first and second TFTs. The first TFT includes a first lower electrode, a first insulating layer, a first oxide semiconductor layer, and a first gate electrode. The first oxide semiconductor layer includes a first channel region overlapping the first gate electrode when viewed in a normal direction of the substrate. The first lower electrode has a first light-shielding portion overlapping the entire first channel region and including a first metal film. The second TFT includes a second lower electrode, the first insulating layer, a second oxide semiconductor layer, and a second gate electrode. The second oxide semiconductor layer includes a second channel region overlapping the second gate electrode when viewed in the normal direction. The second lower electrode has a light-transmitting portion overlapping the second channel region and including a first transparent conductive film but not a light-shielding metal film.

    Active matrix substrate, display device, and drive method therefor

    公开(公告)号:US10984747B2

    公开(公告)日:2021-04-20

    申请号:US16935238

    申请日:2020-07-22

    Abstract: In a display device including an active matrix substrate in which a demultiplexing circuit is formed, a boost circuit, which generates a plurality of connection control signals respectively applied to gate terminals of a plurality of connection control transistors as switching elements configuring the demultiplexing circuit are respectively generated, is provided in the demultiplexing circuit. An internal node of each boost circuit is precharged via a transistor turned on by a boosted voltage of an internal node of another boost circuit, and thereafter, a voltage of the internal node of the boost circuit is boosted via a boost capacitor by a control signal applied to a demultiplexing circuit. The boosted voltage of the internal node is applied to a gate terminal of a connection control transistor as a connection control signal.

    Scanning signal line drive circuit and display device equipped with same

    公开(公告)号:US10923064B2

    公开(公告)日:2021-02-16

    申请号:US16500427

    申请日:2018-04-10

    Abstract: A gate driver (scanning signal line drive circuit) that can allow a gate output to promptly fall without causing a deterioration in a transistor is implemented. A gate-output fall transistor (T01) and a gate-output stabilization transistor (T02) are provided near an output portion of the unit circuit that constitutes a shift register. A first gate low voltage (Vgl1) having a voltage level that is conventionally used to bring pixel TFTs into an off state is provided to a source terminal of the gate-output stabilization transistor (T02), and a second gate low voltage (Vgl2) having a lower voltage level than the first gate low voltage (Vgl1) is provided to a source terminal of the gate-output fall transistor (T01). Upon allowing the gate output to fall, the gate-output fall transistor (T01) is brought into an on state and then the gate-output stabilization transistor (T02) is brought into an on state.

    Display device
    5.
    发明授权

    公开(公告)号:US11100882B1

    公开(公告)日:2021-08-24

    申请号:US17134926

    申请日:2020-12-28

    Abstract: In a display device that adopts an SSD scheme, a demultiplexer circuit has provided for each source bus line, a compensating transistor whose first conduction terminal is connected to the source bus line and whose second conducting terminal is maintained in a floating state. In such a configuration, for example, at the same timing as a connection control transistor changes from an on state to an off state due to a change from a high level to a low level of a control signal that is supplied to a control terminal of the connection control transistor, a control signal that is supplied to a control terminal of the compensating transistor changes from the low level to the high level.

    Display device and method for driving the same

    公开(公告)号:US10796659B2

    公开(公告)日:2020-10-06

    申请号:US16390033

    申请日:2019-04-22

    Abstract: There is adopted a gate driver with a system of applying a direct current voltage as an active scanning signal to a gate bus line through a buffer transistor in a unit circuit that composes a shift register, and a display device is provided with a direct current voltage generation circuit that generates the direct current voltage. The direct current voltage generation circuit changes a voltage level of the direct current voltage in each frame period. For example, when a direct current voltage input terminal is provided on a vertical scanning end side, the direct current voltage generation circuit gradually decreases the voltage level of the direct current voltage in each frame period.

    Display device
    10.
    发明授权

    公开(公告)号:US10796655B2

    公开(公告)日:2020-10-06

    申请号:US16234347

    申请日:2018-12-27

    Abstract: A configuration in which a voltage (a gate on voltage) of only one system is used as a voltage for turning scanning lines to a selected state is employed (single power supply system configuration). A unit circuit that constitutes a shift register within a gate driver includes a thin film transistor whose source terminal is connected to an output control node. In such a configuration, when the external power supply is stopped, a voltage supplied to a gate terminal of the thin film transistor and a voltage supplied to a drain terminal of the thin film transistor are set to the gate on voltage.

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