公开(公告)号：US09647166B2

公开(公告)日：2017-05-09

申请号：US14554363

申请日：2014-11-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsup Choi ,  Wonjong Yoo ,  Deshun Qu ,  Changho Ra ,  Xiaochi Liu ,  Seunghwan Lee ,  Jia Lee

IPC: H01L31/054 ,  H01L29/06 ,  H01L31/032 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/18 ,  H01L31/022425 ,  H01L31/032 ,  H01L31/054 ,  Y02E10/52

Abstract: According to example embodiments, an electronic device includes a substrate, an insulating layer on the substrate, and a diode layer on the insulating layer. The diode layer includes a two dimensional (2D) material layer. The 2D material layer includes an N-type region and a P-type region. According to example embodiments, a method of manufacturing an electronic device includes forming an insulating film on a substrate, forming a 2D material layer on the insulating film, and dividing the 2D material layer into an N-type region and a P-type region.

公开(公告)号：US10269975B2

公开(公告)日：2019-04-23

申请号：US15054871

申请日：2016-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongjun Park ,  Jaeho Lee ,  Changho Ra ,  Wonjong Yoo ,  Faisal Ahmed ,  Zheng Yang ,  Xiaochi Liu

IPC: H01L29/18 ,  H01L29/786 ,  H01L29/24 ,  H01L21/467 ,  H01L29/66 ,  H01L29/04 ,  H01L29/06 ,  H01L29/16 ,  H01L29/778

Abstract: An electronic device includes a 2D material layer having a bandgap. The 2D material layer includes two multilayer 2D material regions and a channel region therebetween. A first electrode electrically contacts one of the multilayer 2D material regions, and a second electrode electrically contacts the other of the multilayer 2D material regions.

公开(公告)号：US10516054B2

公开(公告)日：2019-12-24

申请号：US15423035

申请日：2017-02-02

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation Sungkyunkwan University

Inventor： Seunggeol Nam ,  Wonjong Yoo ,  Zheng Yang

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L29/45 ,  H01L29/778 ,  H01L29/861

Abstract: Provided are electronic devices having a two-dimensional (2D) material layer. The electronic device includes an electrode layer that directly contacts an edge of the 2D material layer. The electrode layer may include a conductive material having a high work function or may have a structure in which an electrode layer includes a conductive material having a high work function and an electrode layer includes a conductive material having a low work function.

公开(公告)号：US09643850B2

公开(公告)日：2017-05-09

申请号：US13864732

申请日：2013-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-young Choi ,  Wonjong Yoo ,  Yeong-dae Lim

IPC: C01B31/04 ,  C23C16/56 ,  B82Y40/00 ,  H01J37/32 ,  B82Y30/00

CPC classification number: C01B31/0484 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/194 ,  C23C16/56 ,  H01J37/321 ,  H01J37/32146 ,  Y10S977/845

Abstract: A method and apparatus for restoring properties of graphene includes exposing the graphene to plasma having a density in a range from about 0.3*108 cm−3 to about 30*108 cm−3 when the graphene is in a ground state. The method and apparatus may be used for large-area, low-temperature, high-speed, eco-friendly, and silicon treatment of graphene.