公开(公告)号：US09054306B2

公开(公告)日：2015-06-09

申请号：US13904665

申请日：2013-05-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-Ho Eun

IPC: H01L21/20 ,  H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1608 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

Abstract: A method of manufacturing a phase change memory device includes forming a lower electrode in a cell region of a substrate and a transistor in a peripheral circuit region of the substrate. A first insulating interlayer is formed on the substrate and covers the lower electrode and the transistor. A first contact is formed to penetrate through the first insulating interlayer to connect with the transistor. A second insulating interlayer is formed on the first insulating interlayer and the first contact. A first opening and a second opening are formed by partially removing the first and second insulating interlayers. A phase change material layer pattern is formed to partially fill the first opening. A bit line is formed to fill a remaining portion of the first opening, and a wiring is formed to fill the second opening. Accordingly, the manufacturing process may be simplified.

Abstract translation: 制造相变存储器件的方法包括在衬底的单元区域和在衬底的外围电路区域中的晶体管形成下电极。 在基板上形成第一绝缘中间层，并覆盖下电极和晶体管。 形成第一接触以穿透第一绝缘中间层以与晶体管连接。 在第一绝缘中间层和第一接触件上形成第二绝缘中间层。 通过部分去除第一和第二绝缘夹层来形成第一开口和第二开口。 形成相变材料层图案以部分地填充第一开口。 形成位线以填充第一开口的剩余部分，并且形成布线以填充第二开口。 因此，可以简化制造过程。