公开(公告)号：US10854608B2

公开(公告)日：2020-12-01

申请号：US16854008

申请日：2020-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-seong Lee ,  Ju-youn Kim ,  Ji-hoon Yoon ,  Il-ryong Kim ,  Kyoung-hwan Yeo ,  Jae-yup Chung

IPC: H01L27/092 ,  H01L29/49 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/06 ,  H01L29/51

Abstract: An integrated circuit device includes a first fin separation insulating portion over the first device region; a pair of first fin-type active regions apart from each other with the first fin separation insulating portion therebetween and collinearly extending in a first horizontal direction; a first dummy gate structure vertically overlapping the first fin separation insulating portion; a second fin separation insulating portion apart from the first fin separation insulating portion and arranged over the second device region; and a plurality of second fin-type active regions apart from each other with the second fin separation insulating portion therebetween in the second device region and collinearly extending in the first horizontal direction, wherein a vertical level of a lowermost surface of the second fin separation insulating portion is equal to or lower than a vertical level of a lowermost surface of the first fin separation insulating portion.

公开(公告)号：US10943904B2

公开(公告)日：2021-03-09

申请号：US17022619

申请日：2020-09-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-seong Lee ,  Ju-youn Kim ,  Ji-hoon Yoon ,  Il-ryong Kim ,  Kyoung-hwan Yeo ,  Jae-yup Chung

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L29/51 ,  H01L29/49 ,  H01L29/06 ,  H01L21/8238

Abstract: An integrated circuit device includes a first fin separation insulating portion over the first device region; a pair of first fin-type active regions apart from each other with the first fin separation insulating portion therebetween and collinearly extending in a first horizontal direction; a first dummy gate structure vertically overlapping the first fin separation insulating portion; a second fin separation insulating portion apart from the first fin separation insulating portion and arranged over the second device region; and a plurality of second fin-type active regions apart from each other with the second fin separation insulating portion therebetween in the second device region and collinearly extending in the first horizontal direction, wherein a vertical level of a lowermost surface of the second fin separation insulating portion is equal to or lower than a vertical level of a lowermost surface of the first fin separation insulating portion.

公开(公告)号：US10685960B2

公开(公告)日：2020-06-16

申请号：US16168046

申请日：2018-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-seong Lee ,  Ju-youn Kim ,  Ji-hoon Yoon ,  Il-ryong Kim ,  Kyoung-hwan Yeo ,  Jae-yup Chung

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L29/51 ,  H01L29/06 ,  H01L21/8238 ,  H01L29/49

Abstract: An integrated circuit device includes a first fin separation insulating portion over the first device region; a pair of first fin-type active regions apart from each other with the first fin separation insulating portion therebetween and collinearly extending in a first horizontal direction; a first dummy gate structure vertically overlapping the first fin separation insulating portion; a second fin separation insulating portion apart from the first fin separation insulating portion and arranged over the second device region; and a plurality of second fin-type active regions apart from each other with the second fin separation insulating portion therebetween in the second device region and collinearly extending in the first horizontal direction, wherein a vertical level of a lowermost surface of the second fin separation insulating portion is equal to or lower than a vertical level of a lowermost surface of the first fin separation insulating portion.