公开(公告)号：US20200279885A1

公开(公告)日：2020-09-03

申请号：US16878208

申请日：2020-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungho Lee ,  Hyuk An ,  Hyuk Soon Choi

IPC: H01L27/146

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region.

公开(公告)号：US20170104020A1

公开(公告)日：2017-04-13

申请号：US15290560

申请日：2016-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungho Lee ,  Seounghyun Kim ,  Hyuk An ,  Yun Ki Lee ,  Hyuk Soon Choi

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

Abstract: An image sensor includes a semiconductor substrate, a first pair of photoelectric conversion regions in a first pixel region of the substrate and a first isolation structure between the photoelectric conversion regions of the first pair of photoelectric conversion regions. The sensor further includes a second pair of photoelectric conversion regions in a second pixel region of the substrate adjacent the first pixel region and a second isolation structure between the photoelectric conversion regions of the second pair of photoelectric conversion regions and having different optical properties than the first isolation structure. First and second different color filters (e.g., green and red) may be disposed on respective ones of the first and second pixel regions

公开(公告)号：US12274098B2

公开(公告)日：2025-04-08

申请号：US18606413

申请日：2024-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungho Lee ,  Hyuk An ,  Hyuk Soon Choi

IPC: H10F39/00 ,  H10F39/12 ,  H10F39/18

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region.

公开(公告)号：US09911777B2

公开(公告)日：2018-03-06

申请号：US15290560

申请日：2016-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungho Lee ,  Seounghyun Kim ,  Hyuk An ,  Yun Ki Lee ,  Hyuk Soon Choi

IPC: H01L31/062 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

Abstract: An image sensor includes a semiconductor substrate, a first pair of photoelectric conversion regions in a first pixel region of the substrate and a first isolation structure between the photoelectric conversion regions of the first pair of photoelectric conversion regions. The sensor further includes a second pair of photoelectric conversion regions in a second pixel region of the substrate adjacent the first pixel region and a second isolation structure between the photoelectric conversion regions of the second pair of photoelectric conversion regions and having different optical properties than the first isolation structure. First and second different color filters (e.g., green and red) may be disposed on respective ones of the first and second pixel regions.

公开(公告)号：US20240222405A1

公开(公告)日：2024-07-04

申请号：US18606413

申请日：2024-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungho Lee ,  Hyuk An ,  Hyuk Soon Choi

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region.

公开(公告)号：US20210143202A1

公开(公告)日：2021-05-13

申请号：US17157205

申请日：2021-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungho Lee ,  Hyuk An ,  Hyuk Soon Choi

IPC: H01L27/146

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region.

公开(公告)号：US10157948B2

公开(公告)日：2018-12-18

申请号：US15232650

申请日：2016-08-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungho Lee ,  Hyuk An ,  Hyuk Soon Choi

IPC: H01L27/146

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region.

公开(公告)号：US20170047367A1

公开(公告)日：2017-02-16

申请号：US15232650

申请日：2016-08-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungho Lee ,  Hyuk An ,  Hyuk Soon Choi

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region.

Abstract translation: 图像传感器包括形成在半导体层中的图像传感器像素的二维阵列。 每个图像传感器像素形成在其中具有对应的半导体区域的衬底中。 每个半导体区域至少包含第一和第二光电转换元件，其设置在其中并排位置处。 还提供电绝缘隔离区域，其至少部分延伸穿过半导体区域并且至少部分地延伸在第一和第二光电转换元件之间，第一和第二光电转换元件可以分别配置为第一和第二半导体类型的第一和第二半导体区域（例如，N -类型）。 还提供至少一个光学反射区域，其至少部分地延伸穿过半导体区域并且包围第一和第二光电转换元件中的至少一个的至少一部分。 在半导体区域内提供半导体浮动扩散（FD）区域（例如，N型区域）。

公开(公告)号：US11804506B2

公开(公告)日：2023-10-31

申请号：US17157205

申请日：2021-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungho Lee ,  Hyuk An ,  Hyuk Soon Choi

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region.

公开(公告)号：US10943937B2

公开(公告)日：2021-03-09

申请号：US16878208

申请日：2020-05-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungho Lee ,  Hyuk An ,  Hyuk Soon Choi

IPC: H01L27/146

Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region.