公开(公告)号：US10734476B2

公开(公告)日：2020-08-04

申请号：US16186421

申请日：2018-11-09

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Fernando Giovanni Menta ,  Salvatore Pisano

IPC: H01L27/06 ,  H01L29/06 ,  H01L29/866 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

Abstract: An integrated electronic device forming a power device and including: a semiconductor body; a first conductive region and a second conductive region, which extend over the semiconductor body, the second conductive region surrounding the first conductive region at a distance; and an edge termination structure, which is arranged between the first and second conductive regions and includes a dielectric region, which delimits an active area of the power device, and a semiconductive structure, which extends over the dielectric region and includes a plurality of diode chains, each diode chain including a plurality of first semiconductive regions of a first conductivity type and a plurality of second semiconductive regions of a second conductivity type, the first and second semiconductive regions being arranged in alternating fashion so as to form a series circuit including a plurality of first and second diodes, which are spaced apart from one another and have opposite orientations.

公开(公告)号：US10115811B2

公开(公告)日：2018-10-30

申请号：US15474825

申请日：2017-03-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Fernando Giovanni Menta ,  Salvatore Pisano

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/423 ,  H01L23/535 ,  H01L29/08 ,  H01L29/10 ,  H01L27/07

Abstract: A vertical channel semiconductor device including: a semiconductor body including a substrate having a first conductivity type and a front layer having a second conductivity type; a first portion of trench and a second portion of trench; and, within the first and second portions of trench, a corresponding conductive region and a corresponding insulating layer. The first and second portions of trench delimit laterally a first semiconductor region and a second semiconductor region, the first semiconductor region having a maximum width greater than the maximum width of the second semiconductor region. The device further includes an emitter region having the first conductivity type, which extends in the front layer and includes: a full portion, which extends in the second semiconductor region; and an annular portion, which extends in the first semiconductor region. The annular portion laterally surrounds a top region having the second conductivity type.

公开(公告)号：US20180122926A1

公开(公告)日：2018-05-03

申请号：US15474825

申请日：2017-03-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Fernando Giovanni Menta ,  Salvatore Pisano

IPC: H01L29/739 ,  H01L29/10 ,  H01L29/08 ,  H01L23/535 ,  H01L27/07

CPC classification number: H01L29/7397 ,  H01L23/535 ,  H01L27/0716 ,  H01L29/0696 ,  H01L29/0804 ,  H01L29/1095 ,  H01L29/4238

Abstract: A vertical channel semiconductor device including: a semiconductor body including a substrate having a first conductivity type and a front layer having a second conductivity type; a first portion of trench and a second portion of trench; and, within the first and second portions of trench, a corresponding conductive region and a corresponding insulating layer. The first and second portions of trench delimit laterally a first semiconductor region and a second semiconductor region, the first semiconductor region having a maximum width greater than the maximum width of the second semiconductor region. The device further includes an emitter region having the first conductivity type, which extends in the front layer and includes: a full portion, which extends in the second semiconductor region; and an annular portion, which extends in the first semiconductor region. The annular portion laterally surrounds a top region having the second conductivity type.