公开(公告)号：US10541268B2

公开(公告)日：2020-01-21

申请号：US15857574

申请日：2017-12-28

Applicant: SPIN MEMORY, INC.

Inventor： Marcin Gajek ,  Michail Tzoufras ,  Davide Guarisco ,  Eric Michael Ryan

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  G11C11/56 ,  G11C11/16 ,  H01L43/14 ,  H01L43/06

Abstract: A magnetic memory device is provided. The magnetic memory device includes: (i) a cylindrical core, (ii) a first cylindrical ferromagnetic layer that surrounds the cylindrical core, (iii) a spacer layer that surrounds the first cylindrical ferromagnetic layer, and (iv) a second cylindrical ferromagnetic layer that surrounds the spacer layer. The cylindrical core, the first cylindrical ferromagnetic layer, the spacer layer, and the second cylindrical ferromagnetic layer collectively form a magnetic tunnel junction.

公开(公告)号：US10424357B2

公开(公告)日：2019-09-24

申请号：US15859157

申请日：2017-12-29

Applicant: SPIN MEMORY, INC.

Inventor： Michail Tzoufras ,  Elizabeth Ann Dobisz ,  Marcin Gajek ,  Davide Guarisco ,  Bartlomiej Adam Kardasz

IPC: G11C11/16 ,  H01L43/02 ,  H01F10/32 ,  H01L27/22 ,  H01L43/08

Abstract: The various embodiments described herein include methods, devices, and systems for fabricating and performing operations on magnetic memory devices. In one aspect, a magnetic memory device includes: (1) a reference magnetic layer configured to have a first current threshold corresponding to a spin current level required to change a magnetic polarization of the reference magnetic layer; (2) a composite magnetic layer comprising a plurality of non-magnetic layers and a plurality of magnetic layers including a storage layer; and (3) a non-magnetic spacer layer between the reference magnetic layer and the composite magnetic layer; where the composite magnetic layer is configured such that the second current threshold is lowered, without decreasing thermal stability of the magnetic memory device, by spin current and/or coupling fields between adjacent magnetic layers of the plurality of magnetic layers.

公开(公告)号：US20190206931A1

公开(公告)日：2019-07-04

申请号：US15857574

申请日：2017-12-28

Applicant: SPIN MEMORY, INC.

Inventor： Marcin Gajek ,  Michail Tzoufras ,  Davide Guarisco ,  Eric Michael Ryan

IPC: H01L27/22 ,  H01L43/06 ,  H01L43/08 ,  H01L43/14

Abstract: A magnetic memory device is provided. The magnetic memory device includes: (i) a cylindrical core, (ii) a first cylindrical ferromagnetic layer that surrounds the cylindrical core, (iii) a spacer layer that surrounds the first cylindrical ferromagnetic layer, and (iv) a second cylindrical ferromagnetic layer that surrounds the spacer layer. The cylindrical core, the first cylindrical ferromagnetic layer, the spacer layer, and the second cylindrical ferromagnetic layer collectively form a magnetic tunnel junction.

公开(公告)号：US10797233B2

公开(公告)日：2020-10-06

申请号：US15858765

申请日：2017-12-29

Applicant: SPIN MEMORY, INC.

Inventor： Marcin Gajek ,  Michail Tzoufras ,  Davide Guarisco ,  Eric Michael Ryan

IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16 ,  H01L43/10 ,  H01L43/06

Abstract: The various implementations described herein include methods, devices, and systems for fabricating magnetic memory devices. In one aspect, a method of fabricating a magnetic memory device includes: (1) providing a dielectric substrate with a metallic core protruding from the dielectric substrate, where: (a) a first portion of the metallic core is surrounded by the dielectric substrate and a second portion of the metallic core protrudes away from a surface of the dielectric substrate; and (b) the second portion includes: (i) a surface offset from the surface of the dielectric substrate and (ii) sidewalls extending away from the surface of the dielectric substrate to the offset surface; (2) depositing a first ferromagnetic layer on exposed surfaces of the metallic core and the dielectric substrate; (3) depositing a spacer layer on exposed surfaces of the first ferromagnetic layer; and (4) depositing a second ferromagnetic layer on exposed surfaces of the spacer layer.