Abstract:
[Object] To provide a chemical sensor provided with a spectral filter excellent in spectral characteristic, a chemical sensor module, a chemical substance detection apparatus, and a chemical substance detection method.[Solving Means] A chemical sensor according to the present technology is provided with a substrate and a plasmon absorption layer. On the substrate, the photodetection unit is formed. The plasmon absorption layer is laminated on the substrate and has a metal nanostructure that generates plasmon absorbency.
Abstract:
The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.
Abstract:
The present technology relates to techniques of preventing intrusion of moisture into a chip.Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.
Abstract:
An electronic device has a mounted image sensor including a light shielding body having light shielding walls and light transmitting portions each formed in an opening between the light shielding walls, a first light-shielding layer formed on a light incident surface side of the light shielding body and having an opening narrower than the opening of the light shielding body for each of the openings of the light shielding body, a microlens provided for each of the openings of the first light-shielding layer on the light incident surface side of the light shielding body, and a light receiving element layer with an array of a large number of light receiving elements. The present disclosure can be used for, for example, a compound-eye optical system.
Abstract:
The present invention relates to a solid-state imaging device having good focusing properties, a method for manufacturing such a solid-state imaging device, and an electronic apparatus. The solid-state imaging device has a semiconductor substrate 11 and a photoelectric conversion part formed in the semiconductor substrate 11. In the solid-state imaging device, a laminate including an organic material layer and an inorganic material layer is formed on the semiconductor substrate with at least one stress relaxation layer 22 interposed between the organic and inorganic material layers. This technology is applicable to, for example, solid-state imaging devices having pixels and microlenses placed thereon.
Abstract:
Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.
Abstract:
The present technology relates to techniques of preventing intrusion of moisture into a chip.Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.
Abstract:
The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.
Abstract:
A chemical sensor including a substrate, an on-chip lens layer, and a flattening layer. On the substrate, a plurality of photodiodes are formed and arranged in a planar form. The on-chip lens layer collects incident light to the photodiodes and is provided on the substrate. The flattening layer covers and planarizes the on-chip lens to form a probe holding surface for holding a probe material.
Abstract:
Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.